Organic semiconductors (OSCs) are attractive optoelectronic materials due to their high extinction coefficients, processing advantages, and ability to display unique phenomena such as singlet exciton fission. However, employing OSCs as active electronic components remains challenging, as this necessitates forming junctions between OSCs and other materials. Such junctions can distort the OSC’s electronic properties, complicating the transfer of energy and charge across them. To investigate these junctions, our group has employed an interface-selective technique, electronic sum frequency generation spectroscopy (ESFG), yet one complication in applying ESFG to thin OSC films is they necessarily have two interfaces that can each produce signals. In a conventional ESFG measurement, information regarding the phase of the ESFG signal is lost. However, this information can be recovered with heterodyne detection (HD) techniques. Here, we present experiments and model calculations that illustrate some key advantages offered by HD-ESFG over conventional ESFG measurements for the study of OSC films. Specifically, we report HD-ESFG spectra of N,N′-dimethyl-3,4,9,10-perylenedicarboximide (C1-PDI) thin films that have been grown on SiO2. To implement these measurements, we have constructed an HD-ESFG spectrometer that uses common path optics to maintain a high degree of phase stability over multiple hours. We find that not only does HD-ESFG offer increased sensitivity to weak features in ESFG spectra, but the phase information included in these measurements aids in selectively isolating signals that arise from a specific film interface. Interestingly, we find that resonances in HD-ESFG spectra of C1-PDI are significantly shifted from those in linear absorption spectra of bulk C1-PDI films, suggesting that the intermolecular packing of molecules at film interfaces differs from the bulk.

Electronically doped metal oxide nanocrystals exhibit tunable infrared localized surface plasmon resonances (LSPRs). Despite the many benefits of IR resonant LSPRs in solution processable nanocrystals, the ways in which the electronic structure of the host semiconductor material impact metal oxide LSPRs are still being investigated. Semiconductors provide an alternative dielectric environment than metallically bonded solids, such as noble metals, which can impact how these materials undergo electronic relaxation following photoexcitation. Understanding these differences is key to developing applications that take advantage of the unique optical and electronic properties offered by plasmonic metal oxide NCs. Here, we use the two-temperature model in conjunction with femtosecond transient absorption experiments to describe how the internal temperature of two representative metal oxide nanocrystal systems, cubic WO3−x and bixbyite Sn-doped In2O3, change following LSPR excitation. We find that the low free carrier concentrations of metal oxide NCs lead to less efficient heat generation as compared to metallic nanocrystals such as Ag. This suggests that metal oxide NCs may be ideal for applications wherein untoward heat generation may disrupt the application's overall performance, such as solar energy conversion and photonic gating.

Exciton-delocalizing ligands (EDLs) are of interest to researchers due to their ability to allow charge carriers to spread into the ligand shell of semiconductor nanocrystals (NCs). By increasing charge carrier surface accessibility, EDLs may facilitate the extraction of highly photoexcited carriers from NCs prior to their relaxation to the band edge, a process that can boost the performance of NC-based photocatalysts and light harvesting systems. However, hot carrier extraction must compete with carrier cooling, which could be accelerated by the stronger interaction of charge carriers and EDLs. This report describes the influence of the EDL phenyldithiocarbamate (PTC) on the electron and hole cooling rates of CdSe NCs. Using state-resolved transient absorption spectroscopy, we find that PTC treatment accelerates hole cooling by a factor of 1.7. However, upon further treatment of these NCs with cadmium(II) acetate, the hole cooling rate reverts to the value measured prior to PTC treatment, yet these NCs maintain a red-shifted absorption spectrum indicative of PTC bound to the NC surface. This result provides strong evidence for the existence of two distinct surface-bound PTC species: one that traps holes before they cool and can be removed by cadmium(II) acetate, and a second species that facilitates exciton delocalization. This conclusion is supported by both DFT calculations and photoluminescence measurements. The outlook from our work is that EDLs do not necessarily lead to an acceleration of carrier cooling, suggesting that they may provide a path for hot carrier extraction.

Organic semiconductors (OSCs) constitute an attractive platform for optoelectronics design due to the ease of their processability and chemically tunable properties. Incorporating OSCs into electrical circuits requires forming junctions between them and other materials, yet the change in dielectric properties about these junctions can strongly perturb the electronic structure of the OSC. Here we adapt an interface-selective optical technique, electronic sum frequency generation (ESFG), to the study of a model OSC thin-film system, copper phthalocyanine (CuPc) deposited on SiO2. We find that by modeling the thickness dependence of our measured spectra, we can identify changes in CuPc’s electronic density of states at both its buried interface with SiO2 and air-exposed surface. Our work demonstrates that ESFG can be used to noninvasively probe the interfacial electronic structure of optically thick OSC films, indicating that it can be used for the study of OSC-based optoelectronics in situ.

Electronically doped metal oxide nanocrystals exhibit tunable infrared localized surface plasmon resonances (LSPRs). Despite the many benefits of IR resonant LSPRs in solution processable nanocrystals, the ways in which the electronic structure of the host semiconductor material impact metal oxide LSPRs are still being investigated. Semiconductors provide an alternative dielectric environment than metallically bonded solids, such as noble metals, which can impact how these materials undergo electronic relaxation following photoexcitation. Understanding these differences is key to developing applications that take advantage of the unique optical and electronic properties offered by plasmonic metal oxide NCs. Here, we use the two-temperature model in conjunction with femtosecond transient absorption experiments to describe how the internal temperature of two representative metal oxide nanocrystal systems, cubic WO3−x and bixbyite Sn-doped In2O3, change following LSPR excitation. We find that the low free carrier concentrations of metal oxide NCs lead to less efficient heat generation as compared to metallic nanocrystals such as Ag. This suggests that metal oxide NCs may be ideal for applications wherein untoward heat generation may disrupt the application's overall performance, such as solar energy conversion and photonic gating.