Co-reporter:Ming Li, Jiahua Min, Xiaoyan Liang, Shiwen Sun, Jijun Zhang, Ying Zhang, Delong Zhang, Jiaxuan Zhang, Zhaoxin Liu, Linjun Wang
Materials Science in Semiconductor Processing 2017 Volume 72(Volume 72) pp:
Publication Date(Web):1 December 2017
DOI:10.1016/j.mssp.2017.09.010
In this paper, we review theoretical and experimental studies on the infrared attenuation spectrum between 400 and 4000 cm−1, which is principally due to the free carrier absorption (FCA). The free carrier absorption is possible by means of inter-conduction band transitions which occur in n-CdZnTe, or by means of inter-valence band transitions which occur in p-CdZnTe. Based on the power law fit results of absorption spectra determined by FCA characteristics, we present an optical measurement technique, which can help us to determine the conduction type of CdZnTe in another way.
Co-reporter:Xiao-yan Liang, Jia-hua Min, Sheng Yang, Ji-jun Zhang, Lin-jun Wang, Yue Zhao, Wei-min Shi
Materials Science in Semiconductor Processing 2015 30() pp: 14-17
Publication Date(Web):
DOI:10.1016/j.mssp.2014.09.032
