Transparent AlZnO/Al2O3/AlZnO nanocapacitor arrays have been fabricated by atomic layer deposition in anodic aluminum oxide templates transplanted on the AlZnO/glass substrates. A high capacitance density of 37 fF/μm2 is obtained, which is nearly 5.8 times bigger than that of planar capacitors. The capacitance density almost remains the same in a broad frequency range from 1 kHz to 200 kHz. Moreover, a low leakage current density of 1.7 × 10–7 A/cm2 at 1 V has been achieved. The nanocapacitors exhibit an average optical transmittance of more than 80% in the visible range, and thus open the door to practical applications in transparent integrated circuits.Keywords: anodic aluminum oxide; atomic layer deposition; transparent capacitors

Microstructure and magnetic properties of In1−xCrxN thin films grown on GaN-on-sapphire templates by molecular beam epitaxy are investigated. Optimized growth conditions are identified for the In1−xCrxN thin films at reduced growth temperature. The In1−xCrxN thin films on the top of the InGaN buffer layers exhibit high crystalline-quality. The magnetic properties of In1−xCrxN thin films show a ferromagnetic behavior even at room temperature.