A piece-shaped phosphor Ca2BO3Cl: Eu2+ was synthesized by solid-state reaction method. This phosphor exhibited wide absorption in ultra-violet and visible range, and bright yellow emission band centering at 570 nm. The concentration quenching mechanism was verified to be a dipole–dipole interaction, and its critical transfer distance was about 17 Å by both calculated crystal structural method and experimental spectral method. This phosphor has a good thermal stability with a quenching temperature (T1/2) of 200 °C. Yellow and white LEDs were fabricated with this phosphor and near UV chips, and the yellow LED has a high color purity of 97.0% and promising current tolerant property, while the white LED shows a luminous efficiency of 11.68 lm/W.Highlights► Broadband excitable and strong yellow-emitting Ca2BO3Cl: Eu2+ phosphor is obtained by solid state reaction. ► Concentration quenching mechanism of Ca2BO3Cl: Eu2+ is dipole–dipole interaction. ► Quenching temperature (T1/2) of Ca2BO3Cl: Eu2+ is at 200 °C. ► As synthesized material can be used for LED phosphor application.

A Eu2+ doped LiSrBO3 phosphor has been synthesized by a double-sintering process under a reducing atmosphere on the purpose of searching broad-band red phosphors. LiSrBO3: Eu2+ shows a broad emission band with a maximum at 618 nm under excitation of 460 nm-light, which is due to a large covalency and a high crystal field splitting. Although a phosphor-converted LED was fabricated with the synthesized LiSrBO3: Eu2+ and a 460 nm-emitting InGaN chip, this phosphor cannot be applied in LED until the quantum efficiency is improved.Highlights▶ Phosphor LiSrBO3:Eu2+ was synthesized by a double-sintering process. ▶ LiSrBO3:Eu2+ exhibits an emission band at 618 nm under excitation of 460 nm-light. ▶ A pcLED has been fabricated by combining LiSrBO3:Eu2+ with a 460 nm LED chip.

Zn2 +-codoped alikali earth sulfide, (Sr, Ca, Zn)S:Eu2 +, was synthesized by a solid-state reaction. The synthesized phosphor was efficiently excited in a broad spectral range from 400 to 500 nm, and exhibits a strong and broad-band red emission. Zn2 +-codoping greatly enhanced the emission of this sulfide phosphor. By adjusting the ratio of Sr2 + to Ca2 + in the host, the emission wavelength could be tuned in a range of 606–645 nm. Red and white LEDs were fabricated with this phosphor and blue chips. The red LED shows a high color purity of 92%, while the white LED has CIE coordinates, Tc and Ra of (0.4051, 0.3841), 3450 K, and 80, respectively.Highlights► Excitation of (Sr, Ca, Zn)S: Eu2 + was suitable for blue LED. ► Zn2 +-codoping greatly enhanced the emission of this sulfide phosphor. ► The emission wavelength can be tuned in range of 606–645 nm with different Ca2 + content. ► The prototype red LED has a high color purity of 92%. ► The white LED has a CIE coordinate, Tc and Ra of (0.4051, 0.3841), 3450 K, and 80.

Eu2+-doped Sr3Al2O6 (Sr3−xEuxAl2O6) was synthesized by a solid-state reaction under either H2 and N2 atmosphere or CO atmosphere. When H2 was used as the reducing agent, the phosphor exhibited green emission under near UV excitation, while CO was used as the reducing agent, the phosphor mainly showed red emission under blue light excitation. Both emissions belong to the d–f transition of Eu2+ ion. The relationship between the emission wavelengths and the occupation of Eu2+ at different crystallographic sites was studied. The preferential substitution of Eu2+ into different Sr2+ cites at different reaction periods and the substitution rates under different atmospheres were discussed. Finally, green-emitting and red-emitting LEDs were fabricated by coating the phosphor onto near UV- or blue-emitting InGaN chips.Highlights►Sr3Al2O6:Eu2+ is synthesized by a solid-state reaction under different atmospheres. ►Phosphor obtained under H2+N2 atmosphere emits green light under NUV excitation. ►Phosphor obtained under CO atmosphere emits red light under blue light excitation. ►Different emission wavelengths are due to Eu2+ in different Sr2+ sites. ►The preferential substitution and the substitution rates of Eu2+ are discussed.

A series of new red-emitting Ce3+, Mn2+-doped barium lithium silicate phosphors, with general formula Ba2Li2Si2O7: Ce3+, Mn2+, were synthesized by solid-state reactions. The Mn2+ in this system can be effectively excited in a wide UV region especially in the NUV range, and has broad red emission after NUV excitation through Ce3+–Mn2+ energy transfer, as well as excellent thermal stability. The blue-shift behavior of Mn2+ emission with increasing temperature can be described in terms of the phonon–electron interaction. The promising luminescence properties make it a red candidate for application in NUV chip pumped LED.

A luminescent europium-containing copolymer, poly(MMA- UA -co-Eu (DBM)2 (TOPO)2)was synthesized The copolymer was characterized by FT-IR, UV–vis, gel permeation chromatograph (GPC), ICP, thermogravimetric analysis (TGA), derivative thermal gravimetric analysis (DTG) and differential scanning calorimetry (DSC). The Eu-copolymer phosphor exhibited high thermal stability, high glass transition, excellent photoluminescence properties (PL), appropriate CIE chromaticity coordinates for red and good quantum yield (18%) under near-UV light excitation. An intense red-emitting light-emitting diode (LED) was fabricated by combining poly[UA-MMA-co-Eu (DBM)2(TOPO)2] with a 395 nm-emitting InGaN chip. The results indicate that the Eu-copolymer phosphor may act as a red component for fabrication of white LEDs.Research Highlights► Poly (UA-MMA) was prepared by reversed emulsion polymerization, methodology is simple, and shows big yield. ► The synthesis routines of copolymer poly(MMA-UA-co-Eu(DBM)2 (TOPO)2) as outlined in Fig. 1 is very convenient. ► The Eu-copolymer phosphor exhibited high thermal stability, high glass transition, excellent photoluminescence properties (PL), appropriate CIE chromaticity coordinates for red and good quantum yield (18%) under near-UV light excitation. ► The Eu-copolymer phosphor may act as a red component for fabrication of white LEDs.

A luminescent europium-containing copolymer, poly(MMA-MA-co-Eu(TTA)2phen), was synthesized though a reaction of EuCl3, 1,10-phenanthroline (phen), α-thenoyltrifluoroacetone (TTA) with copolymer of maleic acid (MA) and methyl methacrylate (MMA). The copolymer was characterized by FT-IR, UV–vis, gel permeation chromatograph (GPC), thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) analysis. The Eu-copolymer phosphor exhibited high thermal stability and excellent photoluminescence properties, appropriate CIE chromaticity coordinates for red and a quantum yield of 24% under near-UV light excitation. It emitted intense red light at 613 nm under UV excitation at room temperature, which is attributed to the 5D0 → 7F2 transition of Eu(III) ions. An intense red-emitting light-emitting diode (LED) was fabricated by combining poly(MA-MMA-co-Eu(TTA)2phen) with a 395 nm-emitting InGaN chip. The results indicate that the Eu-copolymer phosphor may act as a red component for fabrication of white LEDs.

A novel indane based β-diketone with trifluorobutane in the contraposition, 5-acetylindane-4,4,4-trifluorobutane-1,3-dione (HAITFBD) and its europium(III) ternary complex, Eu(AITFBD)3phen, were designed and synthesized, where phen was 1,10-phenanthroline. The complex was characterized by IR, UV–visible, thermogravimetric analysis (TGA) and photoluminescence (PL) spectroscopy in details. The results show that the Eu(III) complex exhibits high thermal stability, wide and strong excitation bands from 300 nm to 425 nm when monitored at 611 nm, which matches well with the 380 nm-emitting InGaN chips. The complex exhibits intense red emission under excitation of near UV light due to the f–f transitions of the central Eu3+ ion. Based on the emission spectrum, the CIE chromaticity coordinates of the LED are calculated as x = 0.63 and y = 0.34, which is suitable to be used as an efficient red phosphor in fabrication of white LEDs. The fluorescence lifetime and the luminescence quantum yield were also measured. The lowest triplet state energy of the primary ligand AITFBD was measured to be 17,730 cm−1, higher than that of the lowest excitation state energy level of the central Eu3+ ion, 5D0, and this suggests that the photoluminescence of the complex is a ligand-sensitized luminescence process (antenna effect). Finally, a bright red light-emitting diode was fabricated by coating the Eu(AITFBD)3phen complex onto a 380 nm-emitting InGaN chip. All the results indicate that Eu(AITFBD)3phen can be applied as a red component for fabrication of near ultraviolet-based white light-emitting diodes.

A novel 2-positional linked carbazole based β-diketone with methoxyl in the 7-position (EMOCTFBD), and its europium(III) ternary complex Eu(EMOCTFBD)3phen were synthesized via a dexterously designed indirect routine, where EMOCTFBD was 1-(9-ethyl-7-methoxyl-9H-carbazol-2-yl)-4,4,4-trifluorobutane-1,3-dione and phen was 1,10-phenanthroline. Eu(EMOCTFBD)3phen shows high thermal stability. The introduction of a methoxyl in the 7-position of the carbazole ring remarkably enhanced the excitation band intensity in the blue region, and the complex exhibited intense red emission under blue-light excitation. The lowest triplet state energy was measured and suggests the photoluminescence process as a ligand-sensitized luminescence process (antenna effect). A bright red-emitting diode was fabricated by coating the complex phosphor onto a ∼460 nm-emitting InGaN chip. All the results indicate that Eu(EMOCTFBD)3phen is an interesting red-emitting material excited by blue light, and therefore may be applied in many fields without UV radiation.

Nanostructured tetragonal LaVO4 with sheaf-like and prickly spherical morphologies has been hydrothermally synthesized with the assistance of ethylenediaminetetraacetic acid (EDTA). In the hydrothermal process, EDTA not only acts as a chelating reagent to facilitate the formation of t-LaVO4, but also acts as a surface capping agent to adhere to the newly created surface and to promote the crystal splitting. t-LaVO4 nanostructures with different morphologies can be achieved by adjusting the molar ratio of EDTA/La3+, the concentration of La3+, and the total volume of the reaction mixture, which result in the change of the crystal growth rate. Nanostructured Eu3+-doped t-LaVO4 was also synthesized and showed intense red emission under near UV-light excitation.

A dinuclear Eu (III) complex Eu2(dbt)3·4H2O was synthesized, where H2dbt was 2,8-bis(4′,4′,4′,-trifluoro-1′,3′-dioxobutyl)-dibenzothiophene. The complex emits the characteristic red luminescence of Eu3+ ion due to the 5D0→7FJ(J=0–4) transitions under 395 nm-light excitation with a luminescent quantum efficiency of 17%. The complex is thermally stable up to 280 °C. It was found that the complex can be effectively excited by a 395 nm-emitting InGaN chip. Bright red light was obtained using the complex as light color-conversion material.

A series of Eu2+-doped alkaline-earth apatites (alkaline-earth=Ca, Sr and Ba) were synthesized by a solid state reaction method with excess chlorides, and the effect of the used excess chlorides on the luminescent property of the synthesized products was discussed. Photoluminescence measurements showed that Eu2+-doped calcium apatite exhibited intensely blue wide-band emission peaking at 457 nm under near UV excitation among the Eu2+-doped Ca, Sr and Ba apatites. Blue and white LEDs were successfully fabricated by pre-coating the calcium apatite phosphors onto ∼395 nm-emitting InGaN chips. The CIE coordinates, color temperature, luminous efficacy and rendering index value of the fabricated white LED are (0.3432, 0.3234), 4969 K, 8 lm/W and 80, respectively. The results indicate that the Eu2+-activated calcium apatite phosphor is a promising candidate as a blue component for fabrication of near UV-based white LEDs.

A single-host white-light-emitting phosphor, Eu2+ doped BaSrMg(PO4)2 (BSMP: Eu2+), was prepared by solid-state reaction. BSMP: Eu2+ shows two main emission bands peaking at 447 and 536 nm, respectively. The emission band peaking at 447 nm is attributed to the 4f65d1-4f7 transition of Eu2+ substituting Sr2+, while the emission band peaking at 536 nm originates from the 4f65d1-4f7 transition of Eu2+ replacing Ba2+ in host lattice. A white light-emitting diode (WLED) was fabricated by combination of a 380 nm emitting InGaN chip and the prepared white phosphor BSMP: Eu2+. In comparison with commercial GaN-pumped YAG: Ce3+ phosphor, BSMP: Eu2+ shows higher color stability against input forward-bias current and excellent color rendering index.

Two new multinuclear europium(III) complexes, [Eu(AFTFBD)3]2(1,4-bmb) and [Eu(AFTFBD)3]3(tmb) were designed and synthesized, where HAFTFBD was 2-acetylfluorene-4,4,4-trifluorobutane-1,3-dione, 1,4-bmb was 1,4-bis[2-(2′-pyridyl)benzimidazolyl]benzene and tmb was 1,3,5-tris[2-(2′-pyridyl)benzimidazolyl]benzene. The complexes were characterized by IR, UV–visible, photoluminescence (PL) spectroscopy and thermogravimetric analysis (TGA). The complexes emit the characteristic red luminescence of Eu3+ ion due to the 5D0–7FJ (J = 0–4) transitions under 395 nm-light excitation. Bright red light-emitting diodes were fabricated by coating the selected complex (Eu(AFTFBD)3)3(tmb) onto ∼395 nm-emitting InGaN chips, and the LEDs show appropriate CIE chromaticity coordinates in red area. All these results suggest that the Eu(III) complexes are promising candidates as red component for application in fabrication of near UV-based white light-emitting diodes.Two new multinuclear europium(III) complexes was synthesized and characterized. A bright red LED was successfully fabricated by coating the complex onto InGaN chip. All these results suggest that the Eu(III) complexes are promising candidates as red component for application in fabrication of near UV-based white light-emitting diodes.

Two halo-phosphate/borate phosphors, blue-emitting CaCl apatite:Eu2+ (CCAP:Eu2+) and yellow-emitting Ca2BO3Cl:Eu2+, were synthesized and used as down-conversion luminescent materials to fabricate a series of white light-emitting diodes (WLEDs) with near-UV LEDs, and their optical properties were investigated. Adjustable correlated color temperature can be realized by simply controlling the blending ratio of the blue and yellow phosphors. The fabricated white LEDs exhibited promising properties, including a high current durability, a wide range of tunable correlated color temperature (4000–8000 K), acceptable color rendering index (78–86).

Two novel carbazole-based β-diketones with 2- or 2,7-substituted groups in the carbazole ring, 2-(4′4′4′-trifluoro-1′3′-dioxobutyl)-carbazole (2-TFDBC) and 2,7-bis(4′4′4′-trifluoro-1′’3′-dioxobutyl)-carbazole (2,7-BTFDBC), and their europium(III) ternary complexes Eu(2-TFDBC)3phen and Eu2(2,7-BTFDBC)3(phen)2 were synthesized via a dexterously designed routine, where phen is 1,10-phenanthroline. The Eu(III) complexes were characterized by elementary analysis, IR and UV−visible absorption spectroscopy, thermogravimetric analysis (TGA), and photoluminescence (PL) measurements. TGA shows that the decomposition temperatures of the complexes are 361.4 and 367.3 °C, respectively. PL measurement results indicated that suitably expanded π-conjugation in the complex molecules makes the excitation band redshift to the visible region, and both the Eu(III) complexes exhibit intense red emission under blue-light excitation. The triplet state energy levels of 2-TFDBC and 2,7-BTFDBC in the complexes are higher than that of the lowest excited level of Eu3+ ion, 5D0, so the photoluminescence mechanism of the Eu(III) complexes was proposed as a ligand-sensitized luminescence process. All of the results indicate that Eu(2-TFDBC)3phen and Eu2(2,7-BTFDBC)3(phen)2 are promising candidates as visible-light excitable red phosphor for luminescence applications.

A series of halosilicate phosphor, Ba5SiO4(F,Cl)6:Eu2+, were synthesized by a solid state reaction. Excited by 370-nm light, Ba5SiO4Cl6:Eu2+ exhibits a broad emission band peaking at 440 nm. Partial substitution of Cl− with F− in the host lattice leads to red-shift in the emission band with centering wavelength from 440 nm to 503 nm. The possible mechanism for the luminescence change was discussed based on the XRD patterns. Blue and green LEDs were fabricated by combination of a 370 nm-emitting near UV chip and the optimal Ba5SiO4Cl6:Eu2+ and Ba5SiO4(F3Cl3):Eu2+, respectively. This series of phosphors is considered as a promising blue and green component used in fabrication of near UV-based white LEDs.

A dinuclear Eu(III) complex Eu2(btbt)3·4H2O·CH3CH2OH·N(CH2CH3)3 was synthesized, where H2(btbt) was 4,4′-bis (4″,4″,4″,-trifluoro-1″,3″-dioxobutyl)-o-terphenyl. The composition and structure of the complex were characterized by elemental analysis, IR, UV–vis and FAB-MS spectroscopy. The complex emits the characteristic red luminescence of Eu3+ ion due to the 5D0 → 7FJ (J = 0–4) transitions under ∼395 nm-light excitation with good luminescent quantum efficiency (32%) and exhibits high thermal stability (337 °C). Bright red light-emitting diodes (LEDs) were fabricated by coating the complex onto a ∼395 nm-emitting InGaN chip. When the mass ratio of the red phosphor to the silicone is 1:30, the efficiency of the fabricated LEDs with the europium complex is 0.98 lm w−1. The CIE chromaticity coordinates of the LEDs are x = 0.6057 and y = 0.3137, which are close to the National Television Standard Committee (NTSC) standard values for red color. The results indicate that the complex may act as a red component in the fabrication of near UV InGaN-based white light-emitting diodes with high color-rendering index.

Sr4Si3O8Cl4:Eu2+ and Sr3.5Mg0.5Si3O8Cl4:Eu2+ phosphors were prepared by a conventional solid state reaction (SS). Excited by 370 nm near-ultraviolet light, the phosphors show an efficient bluish-green wide-band emission centering at 484 nm, which originates from the 4f5d1 → 4f7 transition of Eu2+ ion. The excitation spectra of the phosphors are a broad band extending from 250 nm to 400 nm. Mg2+-codoping greatly enhances the bluish–green emission of the phosphors. An LED was fabricated by coating the Sr3.5Mg0.5Si3O8Cl4:0.08Eu2+ phosphor onto an ~ 370 nm-emitting InGaN chip. The LED exhibits bright bluish–green emission under a forward bias of 20 mA. The results indicate that Sr3.5Mg0.5Si3O8Cl4:0.08Eu2+ is a candidate as a bluish–green component for fabrication of NUV-based white LEDs.

A series of Eu3+-activated tetra-molybdate phosphors BaGd2−xEux(MoO4)4 have been prepared by a solid-state reaction route. The photoluminescent properties of the phosphors were measured at room temperature. Photoluminescence of the phosphors under near UV excitation was enhanced by partial substitution of Mo6+ with W6+ or by co-doping other trivalent ions in BaGd2(MoO4)4:Eu3+. The luminescence of BaGd2[(Mo,W)O4]4:Eu3+ and BaGd2(MoO4)4:Eu3+,A3+ (A3+ = Y3+, Yb3+, and Lu3+) were compared with that of a conventional red phosphor Y2O2S:0.05Eu3+. The results show that sample BaGd1.2Eu0.8(WO4)0.4(MoO4)3.6 exhibits the strongest red emission under near-UV excitation. An intense red light-emitting diode (LED) was fabricated by combining this phosphor with a ∼395 nm-emitting InGaN chip, and the good performance of the LED demonstrates that the phosphor may be a suitable red component for application in near-UV InGaN chip-based white-light-emitting diodes.

Eu3+-activated phosphors, Sr9R2−xEuxW4O24 (R=Gd and Y ), were prepared by the conventional solid-state reaction method and their photoluminescent properties were studied. The phosphors show intense red emission under 395 and 465 nm light excitation, which is matched with the light-emitting wavelength of a near-UV-emitting and a blue-emitting InGaN chips, respectively. Bright red-light-emitting diodes (LEDs) and white-light-emitting diodes (WLEDs) were fabricated by coating Sr9Y 0.4Eu1.6W4O24 phosphor onto ∼395 nm-emitting InGaN chips and ∼460 nm blue-emitting InGaN chips, respectively. The good performances of the LEDs demonstrate that the tungstates are suitable for application of near-UV and blue InGaN-based WLEDs.

A series of carbazole-based β-diketone derivatives and their europium(III) ternary complexes Eu(N-Cx)3phen were designed and synthesized, where N-Cx denotes carbazole-based β-diketonates with different alkyl substituents at N-position of the carbazole ring and phen is 1,10-phenethroline. Thermogravimetric analysis (TGA) shows that the decomposition temperature of the complexes is over 360 °C. UV−visible absorption spectroscopy, photoluminescence (PL), and the luminescence quantum yield of the Eu(III) complexes were measured and compared with each other, and the effect of different substituted-alkyls at N-position in the carbazole ring on the photoluminescence was discussed in details, indicating there exists a competition between the absorption capacity and the energy transfer efficiency for the complexes when the structure of the substituted-alkyls changes. The triplet state energy levels of the β-diketonate ligands in the complexes are higher than that of the lowest excited level of Eu3+ ion, 5D0, so the photoluminescence mechanism of the Eu(III) complexes was proposed as a ligand-sensitized luminescence process. Red LEDs were fabricated by precoating the complexes onto 395 nm emitting InGaN chips. All the results show that this series of Eu(III) complexes is a promising candidate as a red component in fabrication of NUV-based white LEDs.

Cerium-doped terbium aluminum garnet phosphors, Tb3Al5O12:Ce3+ (TAG:Ce3+), were prepared with different methods: co-precipitation (CP), half dry–half wet (HDHW), sol-combustion (SC) and Pechini method plus conventional solid state reaction (SS) method. Comparative study on the phase-formation, particle size, morphologies and luminescent characteristics of the phosphors synthesized with different methods was carried out by means of XRD, FE-SEM and photoluminescence (PL) analysis and SC method was confirmed by the comparison of the results to be an easy and an effective process for preparing efficient and nano-sized Tb3Al5O12:Ce3+ phosphors. Various factors influencing particle size, morphology and PL of the phosphors, such as precursor preparation, reaction temperature and heating time, were also investigated. Light-emitting diodes (LEDs) were fabricated with each phosphor and a ∼460 nm emitting InGaN chip. The LEDs from SS, HDHW and CP exhibit strong white emission while those from SC and Pechini emit yellow, revealing that the emission characteristics of LEDs are influenced not only by the morphology and the particle size of the phosphors, but also by the preparing process of the phosphors.Emission spectra of the LEDs with TAG:0.03Ce3+ phosphors synthesized by different methods (SS (a); CP (b); HDHW (c); SC (d); Pechini (e)) under 20 mA forward bias.

Eu3+-activated phosphors, Sr9R2−xEuxW4O24 (R=Gd and Y ), were prepared by the conventional solid-state reaction method and their photoluminescent properties were studied. The phosphors show intense red emission under 395 and 465 nm light excitation, which is matched with the light-emitting wavelength of a near-UV-emitting and a blue-emitting InGaN chips, respectively. Bright red-light-emitting diodes (LEDs) and white-light-emitting diodes (WLEDs) were fabricated by coating Sr9Y 0.4Eu1.6W4O24 phosphor onto ∼395 nm-emitting InGaN chips and ∼460 nm blue-emitting InGaN chips, respectively. The good performances of the LEDs demonstrate that the tungstates are suitable for application of near-UV and blue InGaN-based WLEDs.

Eu2+-doped Sr3Al2O6 (Sr3−xEuxAl2O6) was synthesized by a solid-state reaction under either H2 and N2 atmosphere or CO atmosphere. When H2 was used as the reducing agent, the phosphor exhibited green emission under near UV excitation, while CO was used as the reducing agent, the phosphor mainly showed red emission under blue light excitation. Both emissions belong to the d–f transition of Eu2+ ion. The relationship between the emission wavelengths and the occupation of Eu2+ at different crystallographic sites was studied. The preferential substitution of Eu2+ into different Sr2+ cites at different reaction periods and the substitution rates under different atmospheres were discussed. Finally, green-emitting and red-emitting LEDs were fabricated by coating the phosphor onto near UV- or blue-emitting InGaN chips.Highlights►Sr3Al2O6:Eu2+ is synthesized by a solid-state reaction under different atmospheres. ►Phosphor obtained under H2+N2 atmosphere emits green light under NUV excitation. ►Phosphor obtained under CO atmosphere emits red light under blue light excitation. ►Different emission wavelengths are due to Eu2+ in different Sr2+ sites. ►The preferential substitution and the substitution rates of Eu2+ are discussed.

A novel 2-positional linked carbazole based β-diketone with methoxyl in the 7-position (EMOCTFBD), and its europium(III) ternary complex Eu(EMOCTFBD)3phen were synthesized via a dexterously designed indirect routine, where EMOCTFBD was 1-(9-ethyl-7-methoxyl-9H-carbazol-2-yl)-4,4,4-trifluorobutane-1,3-dione and phen was 1,10-phenanthroline. Eu(EMOCTFBD)3phen shows high thermal stability. The introduction of a methoxyl in the 7-position of the carbazole ring remarkably enhanced the excitation band intensity in the blue region, and the complex exhibited intense red emission under blue-light excitation. The lowest triplet state energy was measured and suggests the photoluminescence process as a ligand-sensitized luminescence process (antenna effect). A bright red-emitting diode was fabricated by coating the complex phosphor onto a ∼460 nm-emitting InGaN chip. All the results indicate that Eu(EMOCTFBD)3phen is an interesting red-emitting material excited by blue light, and therefore may be applied in many fields without UV radiation.