•The single 2H-MoTe2 phase was precipitated.•The films exhibit a semiconductor behavior due to 2H-MoTe2 phase.•The films have higher Seebeck coefficient and realize P-N type conversion.•The MoTe2 films annealed at 670 K have a higher power factor of 13.68 mW/mK2.MoTe2 thin films were deposited at room temperature by magnetron co-sputtering from independent Mo and Te targets. The composition, structure and thermoelectric properties were systematically investigated. The result reveals that the electrical conductivity was increased with temperature, exhibiting a semiconducting behavior and a crystalline phase of 2H-MoTe2 was precipitated. With the temperature increasing, the Seebeck coefficient value was changed from positive to negative, realizing the p-n type conversion. The maximum value of power factor for p-type and n-type MoTe2 films is 0.328 mW/mK2 at 460 K and 0.815 mW/mK2 at 670 K, respectively. These excellent properties imply that MoTe2 films will be an efficient candidate for thermoelectric applications.

(ZnO)x(Sb2Te3)1–x materials with different ZnO contents have been systemically studied with an aim of finding the most suitable composition for phase change memory applications. It was found that ZnO-doping could improve thermal stability and electrical behavior of Sb2Te3 film. Sb2Te3-rich nanocrystals, surrounded by ZnO-rich amorphous phases, were observed in annealed ZnO-doped Sb2Te3 composite films, and the segregated domains exhibited a relatively uniform distribution. The ZnO-doped Sb2Te3 composite films, especially with 5.2 at% ZnO concentration were found to have higher crystallization temperature, higher crystalline resistance, and faster crystallization speed in comparison with Ge2Sb2Te5. A reversible repetitive optical switching behavior can be observed in (ZnO)5.2(Sb2Te3)94.8, confirming that the ZnO doping is responsible for a fast switching and the compound is stable with cycling. Therefore, it is promising for the applications in phase change memory devices.Keywords: crystallization; nanocomposite; optical reflectivity; phase change; thin films;

Novel chalcogenide glasses based on GeS2–In2S3–Sb2S3 system were prepared by conventional melt-quenching method and their physicochemical properties, e.g. glass transition temperature, density, and Vickers micro-hardness, were studied in detail. The results show that the thermal, mechanical, and optical properties depend largely on four-coordinated Ge or In entities and are sensitive to the variation of the connectivity in the GeS2–In2S3–Sb2S3 glass network. It is a promising chalcogenide glass system suitable for rare earth doping or crystallization of rare earth doped crystals, which aims at optical applications of IR optical amplifier or efficient solid state laser.Highlights► The glass formation of novel GeS2–Sb2S3–In2S3 chalcogenide glasses is determined. ► Increasing Sb2S3 will enlarge the transmitting windows of the novel material. ► The addition of In2S3 has a positive effect on the glass mechanical properties. ► We discussed the changes of physicochemical properties and micro-structure.