Wanqi Jie

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Organization: Northwestern Polytechnical University
Department: State Key Laboratory of Solidification Processing
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Co-reporter:Xu Fu, Yadong Xu, Lingyan Xu, Yaxu Gu, Ningbo Jia, Wanqi Jie
Journal of Crystal Growth 2017 Volume 478(Volume 478) pp:
Publication Date(Web):15 November 2017
DOI:10.1016/j.jcrysgro.2017.06.018
•The crystallographic configurations of dislocation rosette patterns are discussed.•Two mechanisms are responsible for the dislocation pattern discrepancy in CZT and CT.•The relation of pattern sizes of Cd(g) and Te(g) to compressive force is found.•The stress field and polarities of dislocations could affect their bending directions.The rosette-like dislocation clusters around Te inclusions in as-grown CdZnTe/CdTe crystals and those introduced by the micro-indentation on CdZnTe/CdTe surface are studied experimentally. The extended dislocation patterns are formed around Te inclusions in both CdZnTe and CdTe crystals, owing to the build-in stress. Two mutually orthogonal tetrahedrons are observed in CdZnTe crystal. However, the “double-arms” dislocation rosette pattern extended along 〈1 1 0〉 direction is observed in CdTe crystal. The Peierls kink pair mechanism and the Hirsch effects are used to explain the discrepancy of these two different rosette patterns. Similar dislocation rosette patterns are observed on indentation surface of CdZnTe crystal. The dislocation rosette patterns are found to be independent of the indenter orientation, but completely determined by the crystallographic properties of zinc-blende structure of the crystal. Furthermore, the Te(g) and Cd(g) dislocation arms are found to be mixed and bended with each other in CdTe crystal under high indentation stress, making it different from that generated around Te inclusions. A model concerning the comprehensive impact of stress field and electronic polarities dislocations is proposed to clarify the dislocation bending phenomenon.
Co-reporter:Shouzhi Xi, Wanqi Jie, Gangqiang Zha, Yanyan Yuan, Tao Wang, Wenhua Zhang, Junfa Zhu, Lingyan Xu, Yadong Xu, Jie Su, Hao Zhang, Yaxu Gu, Jiawei Li, Jie Ren and Qinghua Zhao  
Physical Chemistry Chemical Physics 2016 vol. 18(Issue 7) pp:5658-5658
Publication Date(Web):27 Jan 2016
DOI:10.1039/C6CP90030E
Correction for ‘Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
Co-reporter:Xu Fu, Yadong Xu, Lingyan Xu, Yaxu Gu, Ningbo Jia, Wei Bai, Gangqiang Zha, Tao Wang and Wanqi Jie  
CrystEngComm 2016 vol. 18(Issue 30) pp:5667-5673
Publication Date(Web):24 Jun 2016
DOI:10.1039/C6CE00519E
Herein, we study the crystallographic configuration of rosette-like dislocation clusters introduced by indentation in CdZnTe (CZT) crystal and the effects of the dislocations on the carrier transport process. The Vickers hardness test was used to generate dislocations artificially on the () Te face of the CZT crystal at room temperature. Etch pit density (EPD) revealed by Everson etchant showed that the dislocation density increased from 4.9 × 104 cm−2 to a concentration too high to be evaluated after the indentation. A model was proposed to explain the rosette-like dislocation clusters. It was verified that the tetrahedron with small size and high EPD belonged to Te(g) dislocations on the () Te face. The hexagon-like distribution of pile-ups formed during the indentation was determined by the zinc-blende structure of CZT, rather than the direction of the indenter. The dislocation pile-up during propagation was observed and analyzed based on the rule proposed by Lomer and Cottrell. The ion beam induced charge (IBIC) measurements showed low carrier collection efficiency (CCE) in the dislocation generation areas, which confirms that the dislocations and related defects can significantly degrade the CCE of a CZT detector. Measurements of low temperature photo-luminescence (PL) showed that the emission peak located at 1.485 eV highly increased in the indentation area and was responsible for the performance degradation of the detectors.
Co-reporter:Shouzhi Xi, Wanqi Jie, Gangqiang Zha, Yanyan Yuan, Tao Wang, Wenhua Zhang, Junfa Zhu, Lingyan Xu, Yadong Xu, Jie Su, Hao Zhang, Yaxu Gu, Jiawei Li, Jie Ren and Qinghua Zhao  
Physical Chemistry Chemical Physics 2016 vol. 18(Issue 4) pp:2639-2645
Publication Date(Web):10 Nov 2015
DOI:10.1039/C5CP04802H
The interface layer has great significance on the potential barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 Å. During CdTe deposition, an As–Te and Ga–Te interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe interface dipole layer (more than 30 Å) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te interface layer. These results provide a more fundamental understanding of the influencing mechanism of the interface layer on the potential barrier height of the CdTe/GaAs heterointerface.
Co-reporter:Yaxu Gu, Wanqi Jie, Caicai Rong, Lingyan Xu, Yadong Xu, Haoyan Lv, Hao Shen, Guanghua Du, Na Guo, Rongrong Guo, Gangqiang Zha, Tao Wang, Shouzhi Xi
Micron 2016 Volume 88() pp:54-59
Publication Date(Web):September 2016
DOI:10.1016/j.micron.2016.06.003
•Microscopic behaviors of damage induced by protons in CdZnTe radiation detectors under different applied biases are investigated using IBIC microscopy.•Local radiation damage severely deteriorates the overall energy spectrum and CCE uniformity, in particular under low applied biases.•Experimental demonstration of improving CCE uniformity degraded by local radiation damage with increasing detector applied bias.The influence of damage induced by 2 MeV protons on CdZnTe radiation detectors is investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency (CCE) in irradiated region is found to be degraded above a fluence of 3.3 × 1011 p/cm2 and the energy spectrum is severely deteriorated with increasing fluence. Moreover, CCE maps obtained under the applied biases from 50 V to 400 V suggests that local radiation damage results in significant degradation of CCE uniformity, especially under low bias, i. e., 50 V and 100 V. The CCE nonuniformity induced by local radiation damage, however, can be greatly improved by increasing the detector applied bias. This bias-dependent effect of 2 MeV proton-induced radiation damage in CdZnTe detectors is attributed to the interaction of electron cloud and radiation-induced displacement defects.
Co-reporter:Yaxu Gu, Wanqi Jie, Linglong Li, Yadong Xu, Yaodong Yang, Jie Ren, Gangqiang Zha, Tao Wang, Lingyan Xu, Yihui He, Shouzhi Xi
Micron 2016 Volume 88() pp:48-53
Publication Date(Web):September 2016
DOI:10.1016/j.micron.2016.06.001
•Te inclusions are proved act as lower potential centers in CdZnTe single crystals.•Potential barrier around Te inclusions is revealed to play an important role in affecting carrier transportation.•Bias-dependent potential barrier heights around Te inclusions are calculated and its influence on electron transportation is proposed.To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe radiation detectors, the perturbation of the electrical field in and around Te inclusions was studied in CdZnTe single crystals via Kelvin probe force microscopy (KPFM). Te inclusions were proved to act as lower potential centers with respect to surrounding CdZnTe matrix. Based on the KPFM results, the energy band diagram at the Te/CdZnTe interface was established, and the bias-dependent effects of Te inclusion on carrier transportation is discussed.
Co-reporter:Yaxu Gu, Wanqi Jie, Caicai Rong, Yuhan Wang, Lingyan Xu, Yadong Xu, Haoyan Lv, Hao Shen, Guanghua Du, Xu Fu, Na Guo, Gangqiang Zha, Tao Wang
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2016 Volume 386() pp:16-21
Publication Date(Web):1 November 2016
DOI:10.1016/j.nimb.2016.09.001
•2 MeV proton-induced radiation damage in CdZnTe crystals is investigated by PL and TSC techniques.•The influence of radiation damage on the luminescent and electrical properties of CdZnTe crystals is studied.•Intensity of PL spectrum is found to decrease significantly in irradiated regions, suggesting the increase of non-radiative recombination centers.•A correlated analysis of PL and TSC spectra suggests that the density of dislocations and A-centers increase after proton irradiation.Radiation damage induced by 2 MeV protons in CdZnTe crystals has been studied by means of photoluminescence (PL) and thermally stimulated current (TSC) techniques. A notable quenching of PL intensity is observed in the regions irradiated with a fluence of 6 × 1013 p/cm2, suggesting the increase of non-radiative recombination centers. Moreover, the intensity of emission peak Dcomplex centered at 1.48 eV dominates in the PL spectrum obtained from irradiated regions, ascribed to the increase of interstitial dislocation loops and A centers. The intensity of TSC spectra in irradiated regions decreases compared to the virgin regions, resulting from the charge collection inefficiency caused by proton-induced recombination centers. By comparing the intensity of identified traps obtained from numerical fitting using simultaneous multiple peak analysis (SIMPA) method, it suggests that proton irradiation under such dose can introduce high density of dislocation and A-centers in CdZnTe crystals, consistent with PL results.
Co-reporter:Yongqin Liu, Wanqi Jie, Zhiming Gao, Yongjian Zheng
Journal of Alloys and Compounds 2015 Volume 629() pp:221-229
Publication Date(Web):25 April 2015
DOI:10.1016/j.jallcom.2015.01.009
•Hagen–Poiseuille equation was used to calculated pressure drop.•Higher hydrogen concentrations result in higher tendency for microporosity formation.•Critical solid fraction fsc decreases greatly with the increase of SDAS or grain size.•Effect of mass flow passage on microporosity formation is tiny when the passage is larger.A mathematical model on the microporosity of aluminum castings is proposed, considering the pressure increasing induced by dissolved hydrogen, solidification shrinkage and interface energy. Two types of feeding mode during solidification has been considered, which corresponds to two different microstructures, i.e. columnar dendrite and equiaxed dendrite. For columnar dendritic solidification, Darcy’s law was adopted to calculate the pressure drop induced by shrinkage. For equiaxed dendritic solidification, Hagen–Poiseuille equation was adopted before the mass flow stopped. The critical solid fraction fsc was obtained by the mathematical model with the consideration of dissolved hydrogen, SDAS (secondary dendrite arm spacing), grain size and the mass flow passage. The calculation examples are presented and compared with experimental data and other models of former researchers.
Co-reporter:Rui Yang
Crystal Research and Technology 2015 Volume 50( Issue 3) pp:215-222
Publication Date(Web):
DOI:10.1002/crat.201400265

HF:H2O2:H2O solution (40%wt.HF: 30wt.%H2O2: H2O, 3:2:1 by volume) was used to reveal extended defects (line, face and volume defects) in bulk ZnTe crystals grown from Te solution. The etch patterns were analyzed based on their size, shape and distribution. The etch figures, both in the shape of pits and hillocks with high resolution, show forms controlled by the symmetries of the respective faces were produced. Two different sizes of pits were observed, the larger-size pits correspond to dislocations penetrating the surface, however, the smaller-size texture pits are produced on the defect-free region, which serve as standard pits on respect faces. The face defects, such as grain boundaries, sub-grain boundaries, dislocation walls, twins and stacking faults, can be all displayed clearly. Another essential feature of the etchant is that, it can effectively dissolve Te-rich phase (Te inclusion/precipitates), which makes it promising to reveal the shape of this volume defect.

Co-reporter:Yaxu Gu, Caicai Rong, Yadong Xu, Hao Shen, Gangqiang Zha, Ning Wang, Haoyan Lv, Xinyi Li, Dengke Wei, Wanqi Jie
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2015 343() pp: 89-93
Publication Date(Web):15 January 2015
DOI:10.1016/j.nimb.2014.11.050
•This work reveals the behaviors of Te inclusion in affecting charge-carrier transport properties in CdZnTe detectors for the first time and analysis the mechanism therein.•The results show that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from the Hecht rule.•This phenomenon is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss.•A modified Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency.•We believe that this research has wide appeal to analyze the macroscopic defects and their influence on charge transport properties in semiconductor radiation detectors.The influence of tellurium (Te) inclusions on the charge collection efficiency in cadmium zinc telluride (CdZnTe or CZT) detectors has been investigated using ion beam induced charge (IBIC) technique. Combining the analysis of infrared transmittance image, most of the low charge collection areas in the IBIC images prove the existence of Te inclusions. To further clarify the role of Te inclusions on charge transport properties, bias dependent local IBIC scan was performed on Te inclusion related regions from 20 V to 500 V. The result shows that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from Hecht rule. This behavior is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. A modified Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency.
Co-reporter:Rongrong Guo;Yadong Xu;Gangqiang Zha
Journal of Electronic Materials 2015 Volume 44( Issue 10) pp:3229-3235
Publication Date(Web):2015 October
DOI:10.1007/s11664-015-3835-0
The effects of sub-bandgap illumination on the charge transport process and detector performance were experimentally studied in detector-grade CdZnTe. Based on the resulting bulk resistivity and photocurrent response under sub-bandgap illumination, the variation of the deep-level occupation fraction was identified according to a modified Shockley–Read–Hall model. From laser-beam-induced transient current measurements, a decrease of negative space-charge density and consequently flattening of the electric field distribution were found under external sub-bandgap illumination, demonstrating a reduction of the active trap concentration. Furthermore, 241Am gamma-ray spectroscopy response measurements confirmed that simultaneous incidence of sub-bandgap light could significantly improve CdZnTe detector energy resolution and charge collection efficiency.
Co-reporter:Rui Yang;Wan-qi Jie;Hang Liu
International Journal of Minerals, Metallurgy, and Materials 2015 Volume 22( Issue 7) pp:755-761
Publication Date(Web):2015 July
DOI:10.1007/s12613-015-1131-x
Using tellurium as a solvent, we grew ZnTe ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnTe exhibits p-type conductivity, with a carrier concentration of approximately 1014 cm−3, a mobility of approximately 300 cm2·V−1·s−1, and a resistivity of approximately 102 Ω·cm. A simple and effective method was proposed for chemical surface texturization of ZnTe using an HF:H2O2:H2O etchant. Textures with the sizes of approximately 1 µm were produced on {100}, {110}, and {111}Zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity.
Co-reporter:Lin Luo, Wanqi Jie, Yadong Xu, Yihui He, Lingyan Xu and Li Fu  
CrystEngComm 2014 vol. 16(Issue 33) pp:7660-7666
Publication Date(Web):04 Jun 2014
DOI:10.1039/C4CE00676C
Transmission electron microscopy (TEM) has been used to investigate precipitates in Hg3In2Te6 crystals grown by the Bridgman method. The results show that small volume fractions of HgIn2Te4 and Hg5In2Te8 coexist in the crystals, which indicates a small portion of the Hg3In2Te6 crystals has been decomposed. The HgIn2Te4 precipitates contain three types of equivalent variants with preferred growth directions along the <100> family of crystal directions of the Hg3In2Te6 matrix. Furthermore, HgIn2Te4 precipitates are coherent with the Hg3In2Te6 matrix.
Co-reporter:Lin Luo, Wanqi Jie, Yadong Xu, Yihui He, Lingyan Xu and Li Fu  
CrystEngComm 2014 vol. 16(Issue 23) pp:5073-5079
Publication Date(Web):07 Mar 2014
DOI:10.1039/C3CE42598C
High-resolution transmission electron microscopy (HRTEM) is used to investigate Hg3In2Te6 (MIT) crystals grown by the Bridgman method. The results show that at least two new ordered phases exist in the crystals. Their corresponding superstructure spots 1/3{422} and 1/6{422} are observed for the first time in defect zinc-blende crystals. The possible structural models of the two ordered phases are suggested based on HRTEM images. A mechanism is proposed to explain the formation and evolution of the two ordered phases. It is thought that the disorder–order phase transformation was not absolutely prevented during the furnace cooling process, due to the small cooling rate and the low thermal conductivity of the defect zinc-blende materials.
Co-reporter:Yihui He, Wanqi Jie, Yadong Xu, Yuecun Wang, Yan Zhou, Huimin Liu, Tao Wang, Gangqiang Zha
Scripta Materialia 2014 Volume 82() pp:17-20
Publication Date(Web):1 July 2014
DOI:10.1016/j.scriptamat.2014.03.007
Co-reporter:Zuo-Xi Li, Xiao-Feng Gou, Wanqi Jie, Gangqiang Zha, Tao Wang, Yadong Xu
Inorganic Chemistry Communications 2014 Volume 41() pp:58-61
Publication Date(Web):March 2014
DOI:10.1016/j.inoche.2013.12.019
•Complex 1 exhibits a pillared-layer α-Po framework with 2D formate-cobalt sheets•The 2D sheet shows a rare (4,4) lattice based on tetracobalt clusters•Complex 1 displays an antiferromagnet and field-induced magnetic phase transitionA novel coordination polymer has been synthesized under solvethermal reaction, which represents a pillared-layer α-Po framework with a rare tetracobalt-formate (4,4) sheet. The magnetic properties have been well studied, and the results show an antiferromagnet and field-induced magnetic phase transition for the title complex.A new pillared-layer α-Po framework associated with a rare tetracobalt-formate (4,4) sheet has been isolated from the solvethermal reaction. The magnetic researches on the title complex show an antiferromagnet and field-induced magnetic phase transition.
Co-reporter:Yuhong Huang, Wanqi Jie, Yan Zhou, Gangqiang Zha
Journal of Materials Science & Technology 2014 Volume 30(Issue 3) pp:234-238
Publication Date(Web):March 2014
DOI:10.1016/j.jmst.2013.08.006
Spin-polarized first-principle was performed to study the structural stability and the electronic states of Cr doped ZnS with the Cr component of 50% in zincblende (ZB), wurtzite (W) and rocksalt (RS) structures under pressure. The results show that the zincblende and wurtzite structures become unstable under low pressures of about 4.68 and 9.61 GPa, respectively, but the rocksalt structure can be maintained up to an extremely high pressure of about 32.92 GPa. Both zincblende and wurtzite Zn0.5Cr0.5S display half metallic features under pressure, while rocksalt Zn0.5Cr0.5S exhibits metallic feature. The half metallic features can be ascribed to the stronger interactions between S-3p and Cr-3d states and the metallic feature is due to the higher crystal symmetry of rocksalt Zn0.5Cr0.5S. These results can provide helpful guidance for Cr doped ZnS to be used in spintronic devices.
Co-reporter:Rui Yang;Yadong Xu
Crystal Research and Technology 2014 Volume 49( Issue 6) pp:353-359
Publication Date(Web):
DOI:10.1002/crat.201300294

Large size ZnTe single crystals were grown from Te-solution with the vertical Bridgman method. The fundamental photoreflectance (PR) spectra of bulk ZnTe crystal subjected to a successive sequence of surface treatments, i.e., mechanical and chemical polishing, and passivation, have been measured over the wavelength range 200–600 nm at room temperature (RT) for the first time. The shape, relative intensity and evolution of the distinct E0, E1, E1+∆1 and E2 transitions during each stage of wafer processing were investigated. It was found that, those distinct transitions vary with varying crystal surface quality. The intensity of the reflectance peaks is large with sharp peak profile when the surface has good crystalline quality. However, E0 peak can be easily eliminated by a small amount of structural damages on the wafer surface. The dispersion tendency of the E1 and E1+∆1 peaks suggesting the wafer surface is widespread covered by structural damages. The reflection peaks’ intensity were all reduced after passivated with H2O2 solution. E2 peak intensity is more easily to be reduced during passivation.

Co-reporter:Shouzhi Xi ; Wanqi Jie ; Gangqiang Zha ; Wenhua Zhang ; Junfa Zhu ; Xuxu Bai ; Tao Feng ; Ning Wang ; Fan Yang ;Rui Yang
The Journal of Physical Chemistry C 2014 Volume 118(Issue 10) pp:5294-5298
Publication Date(Web):February 20, 2014
DOI:10.1021/jp410780n
Low Schottky barrier electrode has great significance on CdZnTe semiconductor nuclear radiation detectors. In this work, synchrotron radiation photoemission spectroscopy (SRPES) has been used to study the interface electronic structure of chromium (Cr) and CdZnTe with Cr coverage thicknesses ranging from 6 to 45.7 Å. Interface reaction and diffusion happen during the Cr deposition. A new interface structure CdZnTe–Cr–Te hence forms, which causes a positive dipole layer at the interface. Schottky barrier height (SBH) is reduced by 0.34 eV due to the dipole layer. Cr/CdZnTe interface structure can effectively change the SBH. Therefore, Cr can be a favorable low Schottky barrier electrode material for CdZnTe detector.
Co-reporter:Lingyan Xu, Wanqi Jie, Gangqiang Zha, Yadong Xu, Xiaochuan Zhao, Tao Feng, Lin Luo, Wenlong Zhang, Ruihua Nan and Tao Wang  
CrystEngComm 2013 vol. 15(Issue 47) pp:10304-10310
Publication Date(Web):25 Sep 2013
DOI:10.1039/C3CE41734D
A radiation damage mechanism of CdZnTe:In crystals under 60Co γ-rays with a cumulated radiation dose of ~2.4 kGy was proposed and discussed. Thermally stimulated current (TSC) measurements were carried out to characterize the γ-ray induced radiation damage. Four main trap levels (T1–T4) originating at four main microscopic defective states were identified. We attributed traps T1 and T2 to shallow donor impurities and shallow acceptor A-centers, respectively. Trap T3 was ascribed to dislocations and a great increase in defect concentration occurred after radiation. Trap T4 originated at deep acceptor Cd vacancies and vacancy related defect complexes and a considerable increase in the trap density, after radiation, lead to the conversion of conduction type from n to p in the Hall measurements and a Fermi level shift in the temperature-dependent resistivity analyses. Radiation induced electrically active defects contributed to the variation of the electrical compensation conditions and the worsening of the charge transport properties, which were consequently reflected by a significant deterioration in CZT detector performance.
Co-reporter:Junning Gao, Wanqi Jie, Yanyan Yuan, Tao Wang, Yong Xie, Yabin Wang, Yuhong Huang, Junli Tong, Hui Yu and Guoqiang Pan  
CrystEngComm 2012 vol. 14(Issue 5) pp:1790-1794
Publication Date(Web):06 Jan 2012
DOI:10.1039/C1CE06412F
Thick epitaxial CdZnTe film has been successfully deposited on (001)GaAs substrate through a simple one-step process by close-spaced sublimation with a deposition rate of up to 1 μm min−1. Well-defined epitaxial features of the film are proved by the plan view SEM, XRDθ–2θ and ϕ scan, and the cross-sectional SEM and HRTEM analysis. A novel epitaxy mode has been discovered. The film is polycrystalline at the early stage and develops into an epitaxial layer as the deposition proceeds. The polycrystalline to single crystalline transition is completed through the lateral overgrowth and the self-organization of the layer-structured grains.
Co-reporter:Zuo-Xi Li;Gangqiang Zha;Tao Wang;Yadong Xu
European Journal of Inorganic Chemistry 2012 Volume 2012( Issue 22) pp:3537-3540
Publication Date(Web):
DOI:10.1002/ejic.201200445

Abstract

A single-chain magnet (SCM) with 1D EO-azide-cobalt chains has been previously synthesized from a solvothermal reaction of Co(NO3)2, NaN3, and 1,4-bis(imidazol-1-yl)benzene (bib). Herein the template HNO3 is introduced into the above reaction system and another new coordination polymer (1) is obtained, which exhibits an α-Po framework with 1D EE-azide-cobalt chains. The magnetic property of 1 has been well studied, and the results show spin-canted antiferromagnetism and slow relaxation of magnetization.

Co-reporter:Junning Gao, Wanqi Jie, Yong Xie, Xin Zheng, Hui Yu, Tao Wang, Guoqiang Pan
Materials Letters 2012 Volume 78() pp:39-41
Publication Date(Web):1 July 2012
DOI:10.1016/j.matlet.2012.03.050
Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ–2θ and Φ scans and rocking, and cross-sectional transmission electron microscopy (TEM). It is found that higher deposition rate and better film quality can be achieved simultaneously at the elevated source and substrate temperatures. The full width half maximum (FWHM) of the X-ray rocking curve for (004) plane of the best CdZnTe film obtained so far is 306 arcsec, which was deposited at a rate of 1 μm/min under 100 Pa of Ar. The hillocks are believed to be prevented due to the prevention of the formation and propagation of long stacking faults.Highlights► Hillocks free CdZnTe epi-layer was grown by a one-step CSS process. ► Higher growth rate and better film quality can be achieved simultaneously. ► The FWHM of (004) rocking curve of the film deposited at 1 μm/min is 306 arcsec.
Co-reporter:Changyou Liu, Tao Wang, Gangqiang Zha, Zhi Gu, Wanqi Jie
Journal of Materials Science & Technology 2012 Volume 28(Issue 4) pp:373-378
Publication Date(Web):April 2012
DOI:10.1016/S1005-0302(12)60070-X
Co-reporter:Xuxu Bai, Wanqi Jie, Gangqiang Zha, Wenhua Zhang, Junfa Zhu, Tao Wang, Yanyan Yuan, Yabing Wang, Hui Hua, Li Fu
Chemical Physics Letters 2010 Volume 489(1–3) pp:103-106
Publication Date(Web):1 April 2010
DOI:10.1016/j.cplett.2010.02.013

Abstract

Adsorption of water molecules on the CdZnTe (1 1 1) B surface has been studied at room temperature using synchrotron radiation ultraviolet photoemission spectroscopy (SRUPS), X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). After water exposure, the Cd 3d core level is chemically shifted by −0.5 eV, and in the valence band, three water-induced orbital levels are found at −3.6, −4.8 and around −8.5 eV below the Fermi level. They can be assigned to water molecules adsorbed on Cd atoms. Together with the observed work function decrease, we suggested that water is adsorbed oxygen-end-down.

Co-reporter:Xuxu Bai ; Wanqi Jie ; Gangqiang Zha ; Wenhua Zhang ; Junfa Zhu ; Tao Wang ; Yanyan Yuan ; Yuanyuan Du ; Yabin Wang ;Li Fu
The Journal of Physical Chemistry C 2010 Volume 114(Issue 39) pp:16426-16429
Publication Date(Web):September 14, 2010
DOI:10.1021/jp1032756
Synchrotron radiation photoemission spectroscopy (SRPES) has been used to study the electronic structure of the Au/CdZnTe(111)A for Au coverage ranging from about 0.3 up to 20 monolayers (ML). It is found that a Schottky barrier with a height of 0.82 eV is formed at the initial deposition of Au. This barrier decreases gradually with increasing Au coverage, which can be ascribed to band bending caused by charge redistribution at the interface and the formation of a positive interface dipole introduced by Cd diffusion. After an annealing process, a signal due to the formation of Au−Cd alloy caused by exquisite Cd diffusion into Au overlayer is observed, and simultaneously the Schottky barrier height (SBH) reduces to 0.32 eV. The present work indicates that cation diffusion into metal overlayer plays a critical role in controlling the SBH.
Co-reporter:Changyou Liu and Wanqi Jie
Crystal Growth & Design 2008 Volume 8(Issue 10) pp:3532-3536
Publication Date(Web):September 6, 2008
DOI:10.1021/cg070337d
The thermodynamic properties of the transporting reactions in the closed-tube ZnSe−N−H−Cl system are analyzed by solving a set of equations with numerical methods, where NH4Cl serves as the transport agent. The results show that ZnSe−NH4Cl system has the properties of high total pressure and low transporting reaction equilibrium constant. The decomposition of hydrogen selenide determines the difference between the partial pressures of ZnCl2 and H2Se, which slows down the growth rate. This difference can be adjusted by adding extra Se and the hydrogen (H2) produced through decomposition of NH3. The ZnCl2 and a little extra Se should be added into the ZnSe−NH4Cl system to improve the utilizing efficiency of H2 and the concentration of practical transporting components of ZnCl2 and H2Se. A ZnSe single crystal as large as 20 × 15 × 8 mm3 was obtained by using ZnCl2·2NH4Cl as the transport agent with a little extra Se at about 1300 K. The experimental results about the diffusion-limited transport rate are well coincided to the thermodynamical analysis.
Co-reporter:Changyou Liu, Huanyong Li, Wanqi Jie, Xinzheng Zhang, Dapeng Yu
Materials Letters 2006 Volume 60(Issue 11) pp:1394-1398
Publication Date(Web):May 2006
DOI:10.1016/j.matlet.2005.11.035
The cluster and rod-like ZnO whiskers were obtained via a simple hydrothermal route in the presence of sodium succinate hexahydrate (Na2C4H4O4·6H2O) at 180 °C for 24 h by using zinc salts and hydrazine hydrate (N2H4·H2O). The microstructures of the as-synthesized samples were investigated by means of scanning electron microscope, transmission electron microscope, high-resolution transmission electron microscopes and X-ray diffraction. The cluster whiskers with typical widths of about 300 nm possess hexagonal structure. Room-temperature photoluminescence spectra of the whiskers show a strong UV emission at 397 nm, as well as a blue emission at 451 and 466 nm.
Co-reporter:Wanqi Jie, Yongqin Chang, Weijun An
Materials Science in Semiconductor Processing 2005 Volume 8(Issue 4) pp:564-567
Publication Date(Web):August 2005
DOI:10.1016/j.mssp.2005.01.002
Single crystals of diluted magnetic semiconductor Cd1−xMnxIn2Te4 with x=0.1x=0.1, 0.22 and 0.4 were grown by the Bridgman method. Several regions composed of α+β1α+β1, α+β+β1α+β+β1, ββ and In2Te3+Te phases were found to crystallize in orders due to the solute partition at the growth interface. The magnetic susceptibility and Kerr effect of ββ-phase crystals with different compositions cut from the ingot were measured. The results revealed the anti-ferromagnetic interactions between Mn2+ ions in the crystal. Meanwhile, the negative rotation angles for x=0.1x=0.1 and 0.22 and positive with small values for x=0.4x=0.4 were detected.
Co-reporter:Ruihua Nan, Wanqi Jie, Gangqiang Zha, Hui Yu
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment (21 March 2013) Volume 705() pp:32-35
Publication Date(Web):21 March 2013
DOI:10.1016/j.nima.2012.12.081
The high resistivity performance for an indium doped Cd0.9Zn0.1Te crystal (CZT:In), grown by the modified vertical Bridgman (MVB) method and under Te-rich conditions, was investigated by the relationship between the deep donor level EDD and the Fermi level. Using the temperature-dependent resistivity measurement, the energy value of Fermi level was evaluated to be 0.740 eV, which almost approaches the mid-gap of CZT:In. Further, the carrier transport behaviors were characterized by gamma-ray energy spectroscopy response with various bias voltages. The determination of the carrier mobility–lifetime products and the broadening in the photo-peak resolution implied incomplete charge collection which can be attributed to the deep level defects in the band gap. Therefore, the deep level defects were identified by thermally stimulated current (TSC) spectroscopy in the temperature range of 25–310 K. Fitted by the plots of the natural logarithm of current intensity ln(IDC) versus 1/(kT), the EDD level dominated by dark current was characterized to be 0.704 eV near the mid-gap. As a deep donor level of doubly ionized Te antisite (TeCd2+) existed in the CZT:In crystal grown under excess tellurium conditions, the origin of EDD level was ascribed to TeCd2+ below the conduction band. As a result, the EDD level can stabilize the Fermi level deep near the mid-gap of CZT:In and the resulting high resistivity.Highlights► We explain the high resistivity performance for a CZT:In crystal. ► Fermi level is pinned near the mid-gap of SI-CZT:In. ► Deep donor level EDD can stabilize the Fermi level deep near the mid-gap. ► Origin of EDD level is assigned to TeCd2+ below the conduction band.
Co-reporter:Yihui He, Wanqi Jie, Tao Wang, Yadong Xu, Yan Zhou, Yasir Zaman, Gangqiang Zha
Journal of Crystal Growth (15 September 2014) Volume 402() pp:15-21
Publication Date(Web):15 September 2014
DOI:10.1016/j.jcrysgro.2014.04.004
•The migration velocity of Te inclusions is calculated in consideration of the thermodiffusion.•The actual needed temperature gradient and time are always much larger than the supposed ones.•The annealing results can be summarized into three categories based on elimination efficiency η.•η is always larger than 70% but with a restricted average value around 85%.•Both size and void effects have great influence on the migration behavior of Te inclusions.The migration of Te inclusions in CdZnTe single crystals has been investigated under temperature gradient fields in saturated Cd/Zn vapor. The migration velocity of Te inclusion upwards temperature gradient is calculated in consideration of the ordinary and thermal diffusion during annealing. The critical annealing conditions for eliminating Te inclusions are supposed based on the calculations. However, the necessary annealing conditions (annealing temperature and time) are always much larger than the suggested ones. The obtained annealing results can be summarized into three categories based on the elimination efficiency η of Te inclusions. Excluding the influence of insufficient annealing conditions, η always tends to be larger than 70% but with a restricted average value around 85%. Further discussions indicate that the interface kinetics, such as the size and void effects, have great influence on η and the migration behaviors of Te inclusions. The size effect likely results in longer annealing time, while the void effect leads to the density of Te inclusions (or voids) with diameter of 5–25 μm increase after long-time annealing.
Co-reporter:Changyou Liu, Tao Hu, Wanqi Jie
Journal of Crystal Growth (15 March 2010) Volume 312(Issue 7) pp:933-938
Publication Date(Web):15 March 2010
DOI:10.1016/j.jcrysgro.2009.12.027
The vapor transport properties in ZnSe–N–H–Cl CVT systems are interpreted based on the one-dimensional diffusion-limited model. The growth rate J is calculated to be 3.5–3.7×10−9 mol cm−2 s−1 at the temperature difference ΔT of 5 K between the source and the growth ends in the systems of ZnSe–NH4Cl, ZnSe–NH4Cl+Se and ZnSe–ZnCl2·2NH4Cl (AZC-II)+Se. The values related to the critical stability parameters of surface, Jcrit and ΔTcrit, are about 2.6×10−9 mol cm−2 s−1 and 3.5 K, respectively. J is not dependent on the amount of NH4Cl among the concentration range from 0.5 to 5.0 mg mL−1. The deviation from stoichiometry of the source material hardly affects on J when AZC-II and Se were added. The experimental investigations of transport rate are carried out using the seeded and un-seeded ampoules with various tip angles. The experimental growth rate Jexp and its critical values well agree with the calculated results. A critical temperature difference up to 5–7 K is obtained in the vertical manner growth.
Co-reporter:Lin Luo, Wanqi Jie, Yadong Xu, Tao Wang, Yuanyuan Du, Li Fu
Journal of Crystal Growth (15 December 2014) Volume 408() pp:54-59
Publication Date(Web):15 December 2014
DOI:10.1016/j.jcrysgro.2014.09.014
•Most twins in MIT are obviously different from perfect zinc-blende crystals.•Huge-density vacancy clusters suppress the glide of twinning dislocations.•Most twins have bigger residual strain than the corresponding matrixes.Electron backscattered diffraction (EBSD) is used to study the effect of huge-density structural vacancies (SVs) on the twins in defect zinc-blende (DZB) crystal Hg3In2Te6 (MIT) grown by the Bridgman method. Comparing with typical perfect zinc-blende (PZB) crystals, three types of twins with several differences are observed in MIT. EBSD and high-resolution transmission electron microscopy (HRTEM) analysis suggest that the twins are deformation twins. The differences between them are attributed to the suppression of high-density structural vacancy clusters on the glide of twinning dislocations. Besides, the residual strain of most twins is found to be higher than that of the corresponding matrices.
Co-reporter:Lingyan Xu, Wanqi Jie, Xu Fu, Gangqiang Zha, Tao Feng, Rongrong Guo, Tao Wang, Yadong Xu, Yasir Zaman
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment (11 December 2014) Volume 767() pp:318-321
Publication Date(Web):11 December 2014
DOI:10.1016/j.nima.2014.08.040
The effects of deep-level defects on the carrier mobility of Cd0.9Zn0.1Te:In single crystals were studied. The total density of donor and acceptor defects in two samples, CZT1 and CZT2, was measured by the thermally stimulated current (TSC) to be ~2.0×1016 cm−3 and ~3.8×1017 cm−3, respectively. The mobility of electrons was measured by time-of-flight (TOF) technique to be 848±42 cm2/Vs in CZT1 and 337±17 cm2/Vs in CZT2. Theoretical estimation of the mobility was made considering the contributions from a variety of scattering mechanisms, including polar-optical phonon scattering, piezoelectric potential scattering, deformation potential scattering and ionized impurity scattering. The total electron mobility was estimated based on Matthiesen׳s rule to be 1004 cm2/Vs in CZT1 and 352 cm2/Vs in CZT2, according to the defect density. Polar-optical phonon scattering was found to be the dominant scattering mechanism limiting the mobility at room temperature when the total defect density is lower than 1.0×1015 cm−3, and ionized impurity scattering will be the dominant when the total defect density higher than 1.0×1017 cm−3.
Co-reporter:Pengfei Yu, Wanqi Jie, Tao Wang
Journal of Crystal Growth (1 October 2010) Volume 312(Issue 20) pp:2876-2880
Publication Date(Web):1 October 2010
DOI:10.1016/j.jcrysgro.2010.07.014
Indium-doped Cd1−xZnxTe (CZT:In) single crystals were annealed by a two-step method, including a high-temperature step and a low-temperature step in sequence. IR transmittance spectrum, I–V curve and PL spectrum were used to characterize the CZT single crystals. After annealing, the opto-electrical properties of the CZT:In crystals were improved obviously. The average IR transmittance was remarkably increased by about 23%, and the resistivity was enhanced by as high as four orders of magnitude. In the PL spectra, the intensity of the (D0, X) peak prominently increased, and the full-width-at-half-maximum was reduced. Meanwhile, the intensity of the DAP peak decreased greatly, and the structure became practically indistinguishable from the background. Moreover, the intensity of the Dcomplex peak also decreased. The investigation shows that these improvements in the physical properties after annealing are due to variations in the micro-structures. The two-step annealing method can eliminate precipitates/inclusions, remove impurities, compensate Cd vacancies, decrease dislocations and reduce internal stress.
Co-reporter:Liying Yin, Wanqi Jie, Tao Wang, Boru Zhou, Fan Yang
Journal of Crystal Growth (1 March 2017) Volume 461() pp:16-24
Publication Date(Web):1 March 2017
DOI:10.1016/j.jcrysgro.2016.11.074
•Growth of ZnTe crystal by TGSG technique is numerically simulated.•Reasons for the slow mass transfer are explained.•The growth interface changes into two distinct parts during the growth.•The inner part of the ingot is predicted to have worse quality than that of the outer part.•High temperature gradient can facilitate the mass transfer and increase the growth rate.A numerical model is developed to simulate the temperature field, the thermosolutal convection, the solute segregation and the growth interface morphology during the growth of ZnTe crystal from Te rich solution by the temperature gradient solution growth (TGSG) technique. Effects of the temperature gradient on the transport phenomena, the growth interface morphology and the growth rate are examined. The influences of the latent heat and the thermal conductivity of ZnTe crystal on the transport phenomena and the growth interface are also discussed. We find that the mass transfer of ZnTe in the solution is very slow because of the low diffusion coefficient and the lack of mixing in the lower part of the solution. During the growth, dilute solution with high density and low growth temperature accumulates in the central region of the growth interface, making the growth interface change into two distinct parts. The inner part is very concave, while the outer part is relatively flat. Growth conditions in front of the two parts of the growth interface are different. The crystalline quality of the inner part of the ingot is predicted to be worse than that of the outer part. High temperature gradient can significantly increase the growth rate, and avoid the diffusion controlled growth to some extent.
Co-reporter:Pengfei Yu, Yihui He, Tao Wang, Wanqi Jie
Journal of Crystal Growth (1 June 2011) Volume 324(Issue 1) pp:22-25
Publication Date(Web):1 June 2011
DOI:10.1016/j.jcrysgro.2011.03.036
Detector-grade CdZnTe:Al (CZT:Al) crystals were obtained by introducing Te antisites after annealing under Te atmosphere. Characterizations revealed that no inclusions were observed in both the as-grown and the annealed crystals. The resistivity and IR transmittance of annealed CZT:Al crystals were greatly enhanced. Moreover, (D0,X) peak representing the quality of crystal appeared in PL spectrum of annealed crystal. 120 h annealed CZT:Al crystal with the energy resolution of 8.19% and μτ value of 1.18×10−3 cm2/V had the best detector performance.
Co-reporter:Lingyan Xu, Wanqi Jie, Xu Fu, A.E. Bolotnikov, R.B. James, Tao Feng, Gangqiang Zha, Tao Wang, Yadong Xu, Yasir Zaman
Journal of Crystal Growth (1 January 2015) Volume 409() pp:71-74
Publication Date(Web):1 January 2015
DOI:10.1016/j.jcrysgro.2014.09.039
•Higher concentration of Te antisite-related deep donors was found in the tail.•The compensation of deep-level defects results in low concentration of net free electrons.•High resistivity with n-type conduction was demonstrated.•Hall mobility is lower in the tail due to higher concentration of deep donors.We investigated the distribution of deep-level defects in CdZnTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeded. The compensation between InCd+ defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I–V analysis. Hall mobility is lower in the tail due to higher concentration of Te antisite-related deep donors.
Co-reporter:Zhiming Gao, Wanqi Jie, Yongqin Liu, Haijun Luo
Acta Materialia (1 April 2017) Volume 127() pp:
Publication Date(Web):1 April 2017
DOI:10.1016/j.actamat.2017.01.042
Porosity is a common casting defect induced by solidification shrinkage as well as gas segregation, nevertheless, it may exert a beneficial effect on reducing alloying element segregation. Unfortunately, the influence of porosity formation on alloying elements segregation in casting alloys have not been synthetically investigated by neither experiment nor theoretical analysis. In this regards, here a theoretical model, based on analyses of the redistribution behaviours of both gas element and the alloying elements, is proposed to simultaneously predict the porosity and segregation in as-solidified Al-based alloys. First, Al-4.5 wt pct Cu alloy with a columnar dendritic interface is selected to mathematically predict the porosity forming process. The modelling results show the same tendency with Poirier’s prediction, but the volume percentage of porosity calculated by the present model is lower than that of Poirier’s. Besides, the present model predicts a decrease in porosity fraction at late stage of solidification, and more than the previous studies, the gas escaped from eutectic liquid is also evaluated. Then, the impact of porosity formation on the velocity of interdendritic feeding flow is estimated, the porosity in the mushy zone apparently slow down the suction of interdendritic liquid. Finally, a mathematical model for element segregation is derived with consideration of porosity formation. Numerical results show that the solute enrichment in interdendritic liquid gets relieved slightly with porosity formation. Consequently, porosity will reduce the solute segregation.For Al-4.5 wt% Cu alloy solidified with a columnar dendritic structure, the formation of pores in mushy zone can be predicted by combing the two effects of hydrogen segregation and the solidification shrinkage. The pressures inside and outside the gas bubbles is essential for the estimation of porosity. Besides, the formation of porosity necessarily affect the local redistribution behaviour of Cu element, consequently, Cu segregation is different from the case which no pore has been formed.Figure optionsDownload full-size imageDownload high-quality image (60 K)Download as PowerPoint slide
Co-reporter:Shouzhi Xi, Wanqi Jie, Gangqiang Zha, Yanyan Yuan, Tao Wang, Wenhua Zhang, Junfa Zhu, Lingyan Xu, Yadong Xu, Jie Su, Hao Zhang, Yaxu Gu, Jiawei Li, Jie Ren and Qinghua Zhao
Physical Chemistry Chemical Physics 2016 - vol. 18(Issue 4) pp:NaN2645-2645
Publication Date(Web):2015/11/10
DOI:10.1039/C5CP04802H
The interface layer has great significance on the potential barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 Å. During CdTe deposition, an As–Te and Ga–Te interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe interface dipole layer (more than 30 Å) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te interface layer. These results provide a more fundamental understanding of the influencing mechanism of the interface layer on the potential barrier height of the CdTe/GaAs heterointerface.
Co-reporter:Shouzhi Xi, Wanqi Jie, Gangqiang Zha, Yanyan Yuan, Tao Wang, Wenhua Zhang, Junfa Zhu, Lingyan Xu, Yadong Xu, Jie Su, Hao Zhang, Yaxu Gu, Jiawei Li, Jie Ren and Qinghua Zhao
Physical Chemistry Chemical Physics 2016 - vol. 18(Issue 7) pp:NaN5658-5658
Publication Date(Web):2016/01/27
DOI:10.1039/C6CP90030E
Correction for ‘Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.
Cadmium zinc selenide
Gadolinium, compd. with magnesium (1:5)
Chromium telluride
Cadmium mercury telluride ((Cd,Hg)Te)
Magnesium, compd. with neodymium (12:1)