Polycrystalline double perovskite La2CoMnO6 thin films are successfully deposited on Si(1 0 0) substrates via chemical solution deposition method. Their structural, electrical and magnetic properties are measured. All films are single phase and polycrystalline with monoclinic structures. The temperature variation of resistivity of the thin films annealed at different temperatures shows that the resistivity decreases with the increase of crystalline quality. For the films annealed at 1073 K, a typical dependence of resistivity on temperature under different currents displays that the resistivity decreases with the increased current. A magnetoresistivity of ∼25% is found at 40 K in an applied field of 8 kOe and MR has positive sign. Large negative current resistivity is observed close to room temperature.

CuCrO2 and CuCrO2:Mn thin films were prepared on sapphire substrates by chemical solution deposition method. The effects of the annealing temperatures and Mn concentration on the structural, electrical and optical properties were investigated. The X-ray diffraction measurement was used to confirm the c-axis orientation of CuCrO2 and CuCrO2:Mn thin films. The maximum transmittances of the films in the visible region are about 65% with direct band gaps of 3.25 eV. All films showed the p-type conduction and semiconductor behavior. The electrical conductivity decreases rapidly with the increase of Mn content, the maximum of the electrical conductivity of 1.35 × 10−2 S cm−1 is CuCrO2 film deposited at 600 °C temperature in 10−3 Torr vacuum, which is about four orders of magnitude higher than that of the Mn-doped CuCrO2 thin film. The energy band of the samples is constructed based on the grain-boundary scattering in order to investigate the conduction mechanism. Moreover, the samples exhibit a clear ferromagnetism, which was likely ascribed to originating from the double-exchange interaction between the Mn3+ and Cr3+ ions.