Co-reporter:Johan Hamonnet, Masahiro Nakano, Kyohei Nakano, Hiroyoshi Sugino, Kazuo Takimiya, and Keisuke Tajima
Chemistry of Materials November 28, 2017 Volume 29(Issue 22) pp:9618-9618
Publication Date(Web):November 7, 2017
DOI:10.1021/acs.chemmater.7b03733
Co-reporter:Yang Wang, Masahiro NakanoTsuyoshi Michinobu, Yasuhiro KiyotaTakehiko Mori, Kazuo Takimiya
Macromolecules February 14, 2017 Volume 50(Issue 3) pp:
Publication Date(Web):January 25, 2017
DOI:10.1021/acs.macromol.6b02313
New π-conjugated polymers with strong electron affinity, PNDTI-BBTs, consisting of naphtho[2,3-b:6,7-b′]dithiophenediimide (NDTI) and benzo[1,2-c:4,5-c′]bis[1,2,5]thiadiazole (BBT) units, were synthesized. PNDTI-BBTs have low-lying LUMO energy levels (∼−4.4 eV), which is sufficiently low for air-stable electron transport in organic field-effect transistors and for being readily doped by a well-known n-dopant, N,N-dimethyl-2-phenyl-2,3-dihydro-1H-benzoimidazole (N-DMBI), affording doped polymer films with relatively high conductivities and Seebeck coefficients. Depending on the solubilizing alkyl groups (2-decyltetradecyl, PNDTI-BBT-DT, or 3-decylpentadecyl groups, PNDTI-BBT-DP), not only the electron mobility in the transistor devices with the pristine polymer thin films (PNDTI-BBT-DT: ∼0.096 cm2 V–1 s–1; PNDTI-BBT-DP: ∼0.31 cm2 V–1 s–1) but also the conductivity and power factor of the doped thins films (PNDTI-BBT-DT: ∼0.18 S cm–1 and ∼0.6 μW m–1 K–2; PNDTI-BBT-DP: ∼5.0 S cm–1 and ∼14 μW m–1 K–2) were drastically changed. The differences in the electric properties were primarily ascribed to the better crystalline nature of the PNDTI-BBT-DP than those of PNDTI-BBT-DT in the thin-film state. Furthermore, UV–vis and ESR spectra demonstrated that doping effectiveness was largely affected by the alkyl groups: the PNDTI-BBT-DP films with better crystalline order prevented overdoping, resulting in ca. 20 times higher conductivity and power factors. From these results, it can be concluded that tuning the intermolecular interaction and consequently obtaining the thin-film with well-ordered polymers by the alkyl side chains is a promising strategy for developing superior thermoelectric materials.
Co-reporter:Chengyuan Wang;Hiroshi Nakamura;Hiroyoshi Sugino
Chemical Communications 2017 vol. 53(Issue 69) pp:9594-9597
Publication Date(Web):2017/08/24
DOI:10.1039/C7CC04998F
Methylthionation on benzo[1,2-b:4,5-b′]dithiophene (BDT) was examined as a promising molecular functionalization strategy to tune the packing structure and molecular orientation on the substrates. β-Methylthionated BDT with a rubrene-like “pitched” π-stacking showed higher mobility than its α-counterpart with a herringbone packing in single-crystal organic field-effect transistors (SC-OFETs).
Co-reporter:Wangqiao Chen;Masahiro Nakano;Qichun Zhang
Organic Chemistry Frontiers 2017 vol. 4(Issue 5) pp:704-710
Publication Date(Web):2017/05/03
DOI:10.1039/C6QO00871B
Naphtho[2,3-b]thiophene diimide (NTI) was found to be selectively thionated to afford naphtho[2,3-b]thiophene-4,9-dicarboxy-5,8-dithiocarboxydiimide (NTI-2S). By elucidating its electrochemical, optical, and structural properties, the effects of thionation on the molecular electronic structure and crystal structure were discussed. Although thionation can greatly lower the LUMO energy level and enhance the intermolecular interaction in the solid state, its chemical lability is a drawback as an organic semiconducting material.
Co-reporter:Itaru Osaka
Advanced Materials 2017 Volume 29(Issue 25) pp:
Publication Date(Web):2017/07/01
DOI:10.1002/adma.201605218
π-Conjugated polymers are an important class of materials for organic electronics. In the past decade, numerous polymers with donor–acceptor molecular structures have been developed and used as the active materials for organic devices, such as organic field-effect transistors (OFETs) and organic photovoltaics (OPVs). The choice of the building unit is the primary step for designing the polymers. Benzochalcogenadiazoles (BXzs) are one of the most familiar acceptor building units studied in this area. As their doubly fused system, naphthobischalcogenadiazoles (NXzs), i.e., naphthobisthiadiazole (NTz), naphthobisoxadiazole (NOz), and naphthobisselenadiazole (NSz) are emerging building units that provide interesting electronic properties and highly self-assembling nature for π-conjugated polymers. With these fruitful features, π-conjugated polymers based on these building units demonstrate great performances in OFETs and OPVs. In particular, in OPVs, NTz-based polymers have exhibited more than 10% efficiency, which is among the highest values reported so far. In this Progress Report, the synthesis, properties, and structures of NXzs and their polymers is summarized. The device performance is also highlighted and the structure–property relationships of the polymers are discussed.
Co-reporter:Masanori Sawamoto, Hiroyoshi Sugino, Masahiro Nakano, Kazuo Takimiya
Organic Electronics 2017 Volume 46(Volume 46) pp:
Publication Date(Web):1 July 2017
DOI:10.1016/j.orgel.2017.04.001
•High performance and stable solution-processed thin-film transistors based on a soluble DNTT derivative were described.•Relationship between thin-film morphology and spin-coating conditions were elucidated.•Low-voltage operation as low as 3 V was achieved.We here report optimization of thin-film fabrication of 2-(4-ethyloctyl)dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (2-EO-DNTT), a soluble DNTT derivative, by spin-coating. The key to fabricate suitable thin films for high-performance TFTs is to control the nucleation and crystallites growth on the substrate during spin-coating; dropwise addition of the solution onto the spinning substrates enabled reproducible fabrication of such thin films, not only on the conventional Si/SiO2 substrate but also glass substrates with the gate dielectric consisting of AlOx/phosphonic acid self-assembled monolayers (SAMs). As a result, the present method realized fabrication of solution-processed TFTs with high mobility (>1.0 cm2 V−1 s−1), good environmental, operational, and thermal stability, and low-voltage operation (<3.0 V), all of which are mostly comparable to those of the vapor-processed parent DNTT-TFTs. These results clearly indicate that 2-EO-DNTT is the solution-processable alternative of DNTT.Download high-res image (356KB)Download full-size image
Co-reporter:Kuan-Min Huang, Hung-Cheng Lin, Kazuaki Kawashima, Itaru Osaka, Hsiao-Wen Zan, Hsin-Fei Meng, Kazuo Takimiya
Organic Electronics 2017 Volume 50(Volume 50) pp:
Publication Date(Web):1 November 2017
DOI:10.1016/j.orgel.2017.08.007
•SCLT using air-stable material PNTz4T shows good air stability and good bias stress reliability in ambient air without any encapsulation.•The PNTz4T-SCLT fabricated on flexible plastic substrate shows good bending durability.•The flexible low-voltage-operated inverter composed of a PNTz4T-SCLT and a resistor exhibits low power consumption and good bias-stress reliability.In this work, we demonstrated a vertical organic transistor using air-stable material to exhibit good lifetime, good bias-stress reliability, and low operation voltage on a flexible plastic substrate in air ambient. With a synthesized NTz-based semiconducting polymer, the proposed space-charge-limited transistor (SCLT) delivers high on-off current ratio of 160000 and high output current density of 10 mA/cm2 at about 2 V. Without encapsulation, the proposed transistor keeps stable current-voltage relationship for 180 days and has only 0.1 V threshold voltage shift after 5000 s bias stress. No significant degradation can be observed after 1000-times bending and a maximum gain of 14 can be obtained when connecting the flexible transistor with a resistor to form an inverter.Download high-res image (224KB)Download full-size image
Co-reporter:Masahiro Nakano and Kazuo Takimiya
Chemistry of Materials 2017 Volume 29(Issue 1) pp:
Publication Date(Web):October 24, 2016
DOI:10.1021/acs.chemmater.6b03413
We describe herein facile thiophene annulation reactions promoted by sodium sulfide hydrate (Na2S·9H2O) for the synthesis of acene(di)thiophenes that can be further utilized as organic semiconductors or building blocks for the elaboration of semiconducting oligomers and polymers. Sodium sulfide hydrate is an efficient source of sulfur for both the aromatic nucleophilic substitution (SNAr) reaction and the nucleophilic hydrogen substitution (SNH) reaction to give a range of electron-donating acene(di)thiophenes and an electron-deficient naphtho[2,3-b:6,7-b′]dithiophene diimide (NDTI), respectively. We also describe organic semiconducting materials on the basis of these acene(di)thiophenes and their use in organic devices, such as organic field-effect transistors and organic photovoltaics, and demonstrate that synthetic evolution is one of the keys to promoting the field of organic semiconducting materials.
Co-reporter:Masahiro Nakano, Masanori Sawamoto, Mizue Yuki, and Kazuo Takimiya
Organic Letters 2016 Volume 18(Issue 15) pp:3770-3773
Publication Date(Web):July 18, 2016
DOI:10.1021/acs.orglett.6b01785
An efficient and scalable method for the synthesis of N,N′-unsubstituted naphtho[2,3-b:6,7-b′]dithiophene-4,5,9,10-tetracarboxylic diimide (NDTI) was newly developed, and the compound was utilized in the Mitsunobu reaction and copper-catalyzed coupling reaction with phenyl boronic acids to synthesize a range of N-alkyl- and phenyl-substituted NDTI derivatives. The new synthetic protocol to NDTI derivatives is advantageous over the previously reported one in terms of the amenability to large-scale synthesis and compatibility with the synthesis of a wide range of N-alkyl and phenyl derivatives, which can in turn pave the way to wide application of NDTI derivatives into electronic materials.
Co-reporter:Masanori Sawamoto, Myeong Jin Kang, Eigo Miyazaki, Hiroyoshi Sugino, Itaru Osaka, and Kazuo Takimiya
ACS Applied Materials & Interfaces 2016 Volume 8(Issue 6) pp:3810
Publication Date(Web):January 19, 2016
DOI:10.1021/acsami.5b10477
We demonstrate a new approach to solution-processable dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) derivatives that can afford good thin-film transistors having mobilities higher than 0.1 cm2 V–1 s–1. The key molecular design strategy is the introduction of one branched alkyl group at the edge of the DNTT core, which improves solubility while retaining semiconducting characteristics in the thin-film state. Dialkylation, i.e., the introduction of two branched alkyl groups on the DNTT core, had a detrimental effect on the semiconducting properties. Although the physicochemical properties of the mono- and dialkylated derivatives at the molecular level were almost the same, the thin-film absorption spectra and the ionization potentials (IPs) were markedly different, indicating that the intermolecular interaction in the thin-film state was affected by the number of alkyl groups. Indeed, the packing structures of the monoalkylated DNTTs in the thin-film state, which were estimated from the XRD patterns, were similar to that of parent DNTT, indicating the existence of the lamella structure with the herringbone packing motif. In sharp contrast, the XRD patterns of the dialkylated DNTT thin films showed poor crystallinity, and the packing structures were significantly different from that of parent DNTT. All the results of structural characterization in the thin-film state and evaluation of device characteristics of the DNTT derivatives with branched alkyl groups indicate that the introduction of a branched alkyl group in the molecular long-axis direction is an effective way to solubilize the rigid, largely π-extended organic semiconducting core without interfering with the semiconducting characteristics in the thin-film state.Keywords: branched alkyl group; high mobility; organic field-effect transistor; organic semiconductor; solution process; thienoacene
Co-reporter:Kazuo Takimiya, Masahiro Nakano, Hiroyoshi Sugino, Itaru Osaka
Synthetic Metals 2016 Volume 217() pp:68-78
Publication Date(Web):July 2016
DOI:10.1016/j.synthmet.2016.02.018
•Based upon the analysis of several molecular systems, the design strategy for molecules for high-mobility organic semiconductors are discussed.•Correlation between molecular/packing structures and electronic structures in the solid state for representative high-mobility organic semiconductors are presented.•Several different molecular factors that can be controlled are proposed for realizing high-mobility organic semiconductors.In this article, we focus on several high-mobility organic semiconductors so far reported, such as acenes, heteroacenes, and rylene diimides, in order to extract molecular and supramolecular factors, including molecular size, manner of π-extension, heteroatom, molecular shape, and substituent, which would enhance our understanding of the design strategy for the synthesis of molecules for high field-effect-mobility semiconductors. After performing a detailed inspection of these organic semiconductors, we arrive at the conclusion that the construction of a two-dimensional (2D) electronic structure with large orbital overlaps in the solid state is the key. This can be realized by tuning these molecular factors; for example, the use of linearly π-extended systems with fused aromatic ring structures, heteroatom incorporation, and the use of suitable substituents for 2D packing, such as herringbone or 2D bricklayer packing.
Co-reporter:Kyohei Nakano, Masahiro Nakano, Bo Xiao, Erjun Zhou, Kaori Suzuki, Itaru Osaka, Kazuo Takimiya, and Keisuke Tajima
Macromolecules 2016 Volume 49(Issue 5) pp:1752-1760
Publication Date(Web):February 25, 2016
DOI:10.1021/acs.macromol.5b02658
New π-conjugated copolymers based on naphtho[2,3-b:6,7-b′]dithiophene-4,5,9,10-diimide (NDTI) combined with thiophene, thienothiophene, or dithienothiophene units are synthesized and used in field-effect transistors (FETs) and organic solar cells (OSCs). The low-lying lowest unoccupied molecular orbital (LUMO) and high-lying highest occupied molecular orbital (HOMO) levels of the polymers contribute to reducing injection barriers for both electrons and holes, resulting in ambipolar operation of FET devices. The charge mobilities were strongly affected by the molecular orientation of the copolymers, and the highest electron mobility of 0.26 cm2/(V s) was observed for the copolymer with thienothiophene unit with edge-on orientation. On the other hand, OSCs with PTB7 as the electron donor polymer and the copolymers as the acceptor showed a broad photoresponse extending to the near-IR region, and the highest power conversion efficiency of over 3.5% was obtained for the copolymer with dithienothiophene unit that showed the favorable face-on orientation in the neat thin film, though the effect of the molecular orientations in OSCs was not as clear as in OFETs owing to the lower crystallinity of the mixed films.
Co-reporter:Azusa Hamaguchi;Tsuyoto Negishi;Yu Kimura;Yoshinori Ikeda;Satria Zulkarnaen Bisri;Yoshihiro Iwasa;Takashi Shiro
Advanced Materials 2015 Volume 27( Issue 42) pp:6606-6611
Publication Date(Web):
DOI:10.1002/adma.201502413
Co-reporter:Sheng-Wen Cheng;De-Yang Chiou;Che-En Tsai;Wei-Wei Liang;Yu-Ying Lai;Jhih-Yang Hsu;Chain-Shu Hsu;Itaru Osaka;Yen-Ju Cheng
Advanced Functional Materials 2015 Volume 25( Issue 38) pp:6131-6143
Publication Date(Web):
DOI:10.1002/adfm.201502338
Two angular-shaped 4,9-didodecyl α-aNDT and 4,9-didodecyl β-aNDT isomeric structures have been regiospecifically designed and synthesized. The distannylated α-aNDT and β-aNDT monomers are copolymerized with the Br-DTNT monomer by the Stille coupling to furnish two isomeric copolymers, PαNDTDTNT and PβNDTDTNT, respectively. The geometric shape and coplanarity of the isomeric α-aNDT and β-aNDT segments in the polymers play a decisive role in determining their macroscopic device performance. Theoretical calculations show that PαNDTDTNT possesses more linear polymeric backbone and higher coplanarity than PβNDTDTNT. The less curved conjugated main chain facilitates stronger intermolecular π–π interactions, resulting in more redshifted absorption spectra of PαNDTDTNT in both solution and thin film compared to the PβNDTDTNT counterpart. 2D wide-angle X-ray diffraction analysis reveals that PαNDTDTNT has more ordered π-stacking and lamellar stacking than PβNDTDTNT as a result of the lesser curvature of the PαNDTDTNT backbone. Consistently, PαNDTDTNT exhibits a greater field effect transistor hole mobility of 0.214 cm2 V−1 s−1 than PβNDTDTNT with a mobility of 0.038 cm2 V−1 s−1. More significantly, the solar cell device incorporating the PαNDTDTNT:PC71BM blend delivers a superior power conversion efficiency (PCE) of 8.01% that outperforms the PβNDTDTNT:PC71BM-based device with a moderate PCE of 3.6%.
Co-reporter:Masahiro Abe, Takamichi Mori, Itaru Osaka, Kunihisa Sugimoto, and Kazuo Takimiya
Chemistry of Materials 2015 Volume 27(Issue 14) pp:5049
Publication Date(Web):June 9, 2015
DOI:10.1021/acs.chemmater.5b01608
By developing an efficient synthetic route to the bis[1]benzothieno[2,3-d;2′,3′-d′]naphtho[2,3-b;6,7-b′]dithiophene (BBTNDT) framework, we have successfully synthesized new BBTNDT derivatives with phenyl (DPh-BBTNDT) or n-hexyl groups (C6-BBTNDT) at the 2 and 10 positions. Characterization of their vapor-deposited thin films revealed that, depending on the substituents introduced, their HOMO energy levels were slightly altered, and DPh-BBTNDT with the HOMO energy level of ca. 5.3 eV was supposed to be a stable organic semiconductor under ambient conditions. In fact, the DPh-BBTNDT-based OTFTs showed not only high mobility of up to 7.0 cm2 V–1 s–1 under ambient conditions but also excellent operational and thermal stabilities up to 300 °C, whereas the parent and the hexyl derivative were less stable against the thermal treatments at high temperatures. The high mobility observed for the DPh-BBTNDT-based OTFTs can be correlated to the interactive packing structure in the bulk single crystal and thin film state of DPh-BBTNDT, which corroborates the existence of the well-balanced two-dimensional electronic structure in the solid state. With these excellent device characteristics, it can be concluded that DPh-BBTNDT is a promising and practical vapor-processable organic semiconductor, which can afford thermally, operationally, and environmentally stable OTFTs as well as high mobility.
Co-reporter:Kazuaki Kawashima, Itaru Osaka, and Kazuo Takimiya
Chemistry of Materials 2015 Volume 27(Issue 19) pp:6558
Publication Date(Web):September 3, 2015
DOI:10.1021/acs.chemmater.5b03124
We here discuss the effect of chalcogen atom on the properties of π-conjugated polymers based on electron deficient fused π-electron systems, naphtho[1,2-c:5,6-c′]bis[1,2,5]oxadiazole (NOz), naphtho[1,2-c:5,6-c′]bis[1,2,5]thiadiazole (NTz), and naphtho[1,2-c:5,6-c′]bis[1,2,5]selenadiazole (NSz). We synthesize new donor–acceptor polymers having NOz and NSz combined with a quaterthiophene donor unit, namely, PNOz4T and PNSz4T, respectively. Physicochemical properties, structures, and charge transport properties of PNOz4T and PNSz4T in comparison with the sulfur analogue (PNTz4T) are discussed. As both NOz and NSz have a higher electron deficient nature than NTz, PNOz4T and PNSz4T are found to possess deeper frontier orbital energy levels. In particular, PNOz4T have a sufficiently deep lowest unoccupied molecular orbital (LUMO) energy level which allows for ambient ambipolar behavior in transistor devices. Interestingly, whereas PNSz4T is mostly amorphous in the thin film, PNOz4T forms a highly crystalline structure that is similar to PNTz4T. This is probably due to the difference of the atomic size, where the large selenium may cause a larger steric repulsion between NSz and the adjacenet thiophene ring, resulting in a larger defect in the polymer backbone than the others. As a result, whereas PNSz4T exhibited p-channel behavior with modest hole mobilities of the order of 10–2 cm2 V–1 s–1, PNOz4T demonstrated p-channel behavior with high hole mobilities of ∼1 cm2 V–1 s–1 and ambipolar behavior with balanced hole and electron mobilities of ∼0.5 and ∼0.3 cm2 V–1 s–1 depending on the surfactant used for the devices. These results show clear correlations between the chalcogen atom and the properties of the naphthobischalcogenadiazole-based polymers. Overall, in addition to NTz, NOz is found to be another fascinating acceptor unit for π-conjugated polymers.
Co-reporter:Masahiro Nakano, Itaru Osaka, Daisuke Hashizume, and Kazuo Takimiya
Chemistry of Materials 2015 Volume 27(Issue 18) pp:6418
Publication Date(Web):August 27, 2015
DOI:10.1021/acs.chemmater.5b02601
Molecular modifications of naphtho[2,3-b:6,7-b′]dithiophene diimide (NDTI) by introducing electron-deficient substituents, such as p-(trifluoromethyl)phenyl-, 5-pyrimidyl-, and chlorine groups, on the thiophene α-positions were examined to develop superior n-channel organic semiconductors for organic thin-film transistors (OTFTs). Among newly developed NDTI derivatives, N,N′-dioctyl-2,7-dichloro-NDTI (5) was found to be a superior semiconductor over N,N′-dioctyl-NDTI (1a). The OTFTs based on 5 showed electron mobility as high as 0.73 cm2 V–1 s–1, whereas the mobility of α-unsubstituted 1a based OTFTs was 0.05 cm2 V–1 s–1. The improved mobility by the introduction of chlorine groups can be explained by the electronic structure in the solid state. In contrast to an one-dimensional (1D) electronic structure of 1a elucidated by single crystal X-ray analysis and theoretical calculations, 5 can be characterized as a two-dimensional (2D) bricklayer structure, in which the chlorine groups at the thiophene α-positons play a critical role. In the packing structure of 5, there exist intermolecular tape-like arrays connected by intermolecular Cl···O═C contacts in the side-by-side direction of the π-stacking columns with the face-to-face intermolecular interaction. In fact, intermolecular lowest unoccupied molecular orbital (LUMO) overlaps estimated by the theoretical calculations suggest the 2D-like electronic structure, which can well explain the better performances in the OTFT devices than those of 1a-based ones. From these results, it can be concluded that the chlorination on the thiophene α-positions of the NDTI core is an effective approach to improve performances of NDTI-based n-channel materials by controlling the electronic structures of materials both at the molecular (i.e., highest occupied molecular orbital (HOMO) and LUMO energy level) and the solid-state levels (intermolecular orbital overlaps).
Co-reporter:Jian-Yong Hu, Masahiro Nakano, Itaru Osaka and Kazuo Takimiya
Journal of Materials Chemistry A 2015 vol. 3(Issue 17) pp:4244-4249
Publication Date(Web):24 Mar 2015
DOI:10.1039/C5TC00486A
Two new NDTI-based triad-type ambipolar molecular semiconductors (NDTI-BBT and NDTI-BNT) were designed and synthesized. The triads can afford solution-processed OFETs with well-balanced, high hole and electron mobilities, up to 0.25 and 0.16 cm2 V−1 s−1, respectively, which further leads to the successful demonstration of complementary-like inverters with high voltage gains of 281 and 254 in the first and third quadrants, respectively, under ambient conditions.
Co-reporter:Masahiro Nakano, Itaru Osaka and Kazuo Takimiya
Journal of Materials Chemistry A 2015 vol. 3(Issue 2) pp:283-290
Publication Date(Web):03 Nov 2014
DOI:10.1039/C4TC02164A
Dibenzo[a,e]pentalene-embedded thienoquinoidals with dicyanomethylene termini were synthesized as new π-extended thienoquinoidals for n-type organic semiconductors. Single crystal X-ray analysis demonstrated that the target molecule has an all trans-polyene structure with reasonable bond-length alternation in the thienoquinoidal strand, indicative of effective extension of the π-conjugation system. Thanks to their π-extended structures, not just the low-lying LUMO energy levels (−4.2 to −4.3 eV) but also relatively high HOMO energy levels (∼−5.6 eV) were characterized by means of cyclic voltammetry. Interestingly, depending on the position of the solubilizing long alkyl groups, they formed H- or J-aggregate-like structures in the thin-film state testified by the thin film absorption spectra. These distinct intermolecular interactions in the thin film state could cause different behaviours in thin-film field-effect transistors; for the former ambipolar characteristics were observed, whereas only n-type response was detected for the latter.
Co-reporter:Itaru Osaka, Kazuo Takimiya
Polymer 2015 Volume 59() pp:A1-A15
Publication Date(Web):24 February 2015
DOI:10.1016/j.polymer.2014.12.066
Charge carrier transport is one of the most important functions of semiconducting polymers when they are used in organic electronic devices. Due to the transport path limited in two directions, i.e., along the π-conjugated backbone and intermolecular π–π stacking, the backbones are required to be oriented in the desired motifs with respect to the substrate, such as “edge-on” and “face-on” in order to maximize the device performances. In this Feature Article, we focus on how the orientation of semiconducting polymer backbones are influenced by the chemical structure, e.g., backbone structure, molecular weight, and side chains, and processing conditions. Implications of the backbone orientation for the performance of organic devices such as transistors and solar cells are also discussed.Figure optionsDownload full-size imageDownload as PowerPoint slide
Co-reporter:Kohsuke Kawabata;Itaru Osaka;Masahiro Nakano;Noriko Takemura;Tomoyuki Koganezawa
Advanced Electronic Materials 2015 Volume 1( Issue 6) pp:
Publication Date(Web):
DOI:10.1002/aelm.201500039
A series of donor–acceptor polymers incorporating the thieno[3,2-b]thiophene-2,5-dione (TTD) acceptor unit and different donor units are synthesized. The synthesis of a TTD-based key monomer, 3,6-bis(5-bromo-4-alkylthiophen-2-yl)thieno[3,2-b]thiophene-2,5-dione, is successfully improved to afford higher total yield with less reaction steps (42%/4 steps) than those previously reported (14%/7 steps). The polymers exhibit low-lying lowest unoccupied molecular orbital (LUMO) energy levels of around −3.8 eV and highest occupied molecular orbital (HOMO) energy levels ranging from −5.49 to −5.14 eV. Organic field-effect transistors based on the polymers exhibit ambipolar characteristics with high hole and electron mobilities in the order of 10−1 cm2 V−1 s−1 in air. These high mobilities can be attributed to the formation of highly crystalline lamellar structure with preferential edge-on orientation of the polymer thin films. Interestingly, the ratio of the electron to hole mobilities decreases with the extension of the donor units. This can be explained by the distribution of HOMOs and LUMOs along the backbones. Additionally, complementary inverters using the polymers with well-balanced ambipolar characteristics exhibit sharp switching characteristics with high gain of ≈140 at the supply voltage of 40 V.
Co-reporter:Kazuo Takimiya;Itaru Osaka
The Chemical Record 2015 Volume 15( Issue 1) pp:175-188
Publication Date(Web):
DOI:10.1002/tcr.201402051
Abstract
Linear-fused naphthodithiophenes (NDTs) are emerging building blocks in the development of new semiconducting small molecules, oligomers, and polymers. The promising nature of NDT-based materials as organic semiconductors has been demonstrated by superior device characteristics in organic field-effect transistors (OFETs) and organic photovoltaics (OPVs) in the last few years. In particular, it is quite impressive that a power conversion efficiency as high as 8.2% has been achieved for a single-junction OPV cell consisting of NDT-based semiconducting polymers and a fullerene derivative in such a short period of time. Here, we provide an overview of recent synthetic evolutions in NDT chemistry and progress in NDT-based materials, especially conjugated oligomers and polymers and their applications to OFETs and OPVs.
Co-reporter:Masahiro Nakano, Itaru Osaka, and Kazuo Takimiya
Macromolecules 2015 Volume 48(Issue 3) pp:576-584
Publication Date(Web):January 16, 2015
DOI:10.1021/ma502306f
A series of naphthodithiophene diimid (NDTI) based semiconducting polymers with various comonomer units, i.e., thienylenevinylene (TV), naphtho[1,2-b:5,6-b′]dithiophene (NDT), vinylene (V), benzo[c][1,2,5]thiadiazole (BTz), and naphtho[1,2-c:5,6-c′]bis[1,2,5]thiadiazole (NTz), were synthesized by Stille coupling or copper iodide-assisted Stille coupling using 2,7-dibromo-NDTI or 2,7-bis(trimethylstannyl)-NDTI, respectively. Their HOMO and LUMO energy levels were estimated by cyclic volttammetry and photoelectron spectroscopy. The HOMO energy levels of the NDTI-based polymers were strongly affected by the electronic nature of the comonomer units. In contrast, their LUMO energy levels were almost identical, likely owing to their localized LUMOs on the NDTI moiety. All the polymers showed air-stable electron transport in the field-effect transistors (FETs), thanks to their low-lying LUMO (∼−4.0 eV), as ambipolar (PNDTI-TV, -NDT, ∼0.082 cm2 V–1 s–1, μe = ∼0.029 cm2 V–1 s–1) or unipolar n-channel materials (PNDTI-V, -BTz, PNDTI-NTz, μe = ∼0.21 cm2 V–1 s–1), depending on their HOMO energy levels. These results indicate that the type of active carrier in the NDTI-based polymers can be controlled by the nature of comonomer units. Moreover, the two-dimensional grazing incidence X-ray diffraction (2D GIXD) indicated that the polymers with linear backbone structures and large space between the branched alkyl chains tend to afford well-organized crystalline thin film with the edge-on orientation, consistent with good transport characteristics in their FET devices.
Co-reporter:Kazuo Takimiya, Itaru Osaka, Takamichi Mori, and Masahiro Nakano
Accounts of Chemical Research 2014 Volume 47(Issue 5) pp:1493
Publication Date(Web):May 1, 2014
DOI:10.1021/ar400282g
The design, synthesis, and characterization of organic semiconductors applicable to organic electronic devices, such as organic field-effect transistors (OFETs) and organic photovoltaics (OPVs), had been one of the most important topics in materials chemistry in the past decade. Among the vast number of materials developed, much expectation had been placed on thienoacenes, which are rigid and planar structures formed by fusing thiophenes and other aromatic rings, as a promising candidate for organic semiconductors for high-performance OFETs. However, the thienoacenes examined as an active material in OFETs in the 1990s afforded OFETs with only moderate hole mobilities (approximately 0.1 cm2 V–1 s–1). We speculated that this was due to the sulfur atoms in the thienoacenes, which hardly contributed to the intermolecular orbital overlap in the solid state. On the other hand, we have focused on other types of thienoacenes, such as [1]benzothieno[3,2-b][1]benzothiophene (BTBT), which seem to have appropriate HOMO spatial distribution for effective intermolecular orbital overlap. In fact, BTBT derivatives and their related materials, including dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT), have turned out to be superior organic semiconductors, affording OFETs with very high mobilities. To illustrate some examples, we have developed 2,7-diphenyl BTBT (DPh-BTBT) that yields vapor-deposited OFETs having mobilities of up to 2.0 cm2 V–1 s–1 under ambient conditions, highly soluble dialkyl-BTBTs (Cn-BTBTs) that afford solution-processed OFETs with mobilities higher than 1.0 cm2 V–1 s–1, and DNTT and its derivatives that yield OFETs with even higher mobilities (>3.0 cm2 V–1 s–1) and stability under ambient conditions. Such high performances are rationalized by their solid-state electronic structures that are calculated based on their packing structures: the large intermolecular orbital overlap and the isotropic two-dimensional electronic structure are the key regardless of the molecular size and substituents on the BTBT and its related thienoacene cores. Along with the discovery of such attracting performances, versatile and practical methods for the synthesis of BTBT and its derivatives, and the π-extended derivatives including DNTT, dianthra[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DATT), and the thienoacenes with two thieno[3,2-b]thiophene moieties, have been developed. In addition, the materials have been recently utilized in sophisticated devices and circuits, including all-printed transistor arrays, flexible circuits on ultrathin plastic substrates, and biomedical applications, underscoring their promise as practical semiconductors for electronic device applications. These exciting results of the present BTBT-based materials are expected to open doors to new horizons of organic semiconductors in terms of practical application and the design and synthesis of far more superior materials.
Co-reporter:Kazuo Takimiya, Itaru Osaka, and Masahiro Nakano
Chemistry of Materials 2014 Volume 26(Issue 1) pp:587
Publication Date(Web):August 16, 2013
DOI:10.1021/cm4021063
Organic electronics has rapidly advanced in the last two decades, owing to the development of semiconducting materials and the innovation of device technologies. One of the critical issues in the materials development, for achieving high performances in the organic devices, is to precisely control their frontier orbitals, i.e., the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) energy levels. These energy levels are largely dependent on the chemical structures, and thus to evaluate the electronic properties of representative π-building blocks and to understand their structure–property relationship are of particular importance. In this review, we focus on various π-building blocks for semiconducting polymers and oligomers, especially electron poor heterocycles (acceptor units), and revaluate their electronic structures focusing on the model compounds and the corresponding polymers. A clear difference in the electronic structure is found depending on the chemical structure, which can be explained in terms of “inductive effect” and “resonance effect”. We hope that this Review will give new insight into the electronic structure of the semiconducting materials and be an important guideline for the materials design.Keywords: electronic structure; highest occupied molecular orbital; lowest unoccupied molecular orbital; semiconducting polymer; π-building block;
Co-reporter:Itaru Osaka, Toru Abe, Hiroki Mori, Masahiko Saito, Noriko Takemura, Tomoyuki Koganezawa and Kazuo Takimiya
Journal of Materials Chemistry A 2014 vol. 2(Issue 13) pp:2307-2312
Publication Date(Web):22 Jan 2014
DOI:10.1039/C3TC32386B
We present new donor–acceptor semiconducting polymers based on a strong acceptor unit, thieno[3,2-b]thiophene-2,5-dione (TTD). The polymers exhibit a deep LUMO energy level of around −4 eV while preserving a relatively low-lying HOMO energy level of below −5 eV and a quite small optical band gap of 1.2 eV. Interestingly, bottom-gate-top-contact transistor devices based on the polymers demonstrate p-channel behavior with high hole-mobilites of 1.38 cm2 V−1 s−1, whereas top-gate-bottom-contact devices show ambipolar behavior with hole and electron mobilities of ∼0.12 and ∼0.20 cm2 V−1 s−1, respectively. These results indicate the great potential of TTD to be used as the building unit for high-performance semiconducting polymers.
Co-reporter:Naoyuki Yanai, Takamichi Mori, Shoji Shinamura, Itaru Osaka, and Kazuo Takimiya
Organic Letters 2014 Volume 16(Issue 1) pp:240-243
Publication Date(Web):December 12, 2013
DOI:10.1021/ol403234q
Dithiophene-fused tetracyanonaphthoquinodimethanes (DTTNAPs) were synthesized and evaluated as n-channel organic semiconductors. DTTNAPs, regardless of isomeric structures and substituents, have low-lying LUMO energy levels (∼4.6 eV below the vacuum level), suitable for stable n-channel field-effect transistors (FETs) under ambient conditions. In fact, α-DTTNAP derivatives afforded solution-processed FETs showing an electron mobility of 10–3 cm2 V–1 s–1, indicating that DTTNAPs are a potential molecular framework for n-channel organic semiconductors.
Co-reporter:Takamichi Mori, Naoyuki Yanai, Itaru Osaka, and Kazuo Takimiya
Organic Letters 2014 Volume 16(Issue 5) pp:1334-1337
Publication Date(Web):February 24, 2014
DOI:10.1021/ol5000567
A series of new quinoidal naphthodithiophenes, 2,7-bis(α,α-dicyanomethylene)-2,7-dihydronaphtho[1,2-b:5,6-b′]dithiophenes, in which all the four fused aromatic rings are incorporated into the quinoidal system, were synthesized and evaluated as an n-channel organic semiconductor. Solution-processed field-effect transistors exhibited typical n-channel transistor characteristics with the mobility as high as 0.1 cm2 V–1 s–1, which is higher by more than 1 order of magnitude than those reported for isomeric quinoidal naphthodithiophenes having a naphthoquinoidal structure.
Co-reporter:Erjun Zhou, Masahiro Nakano, Seiichiro Izawa, Junzi Cong, Itaru Osaka, Kazuo Takimiya, and Keisuke Tajima
ACS Macro Letters 2014 Volume 3(Issue 9) pp:872
Publication Date(Web):August 18, 2014
DOI:10.1021/mz5004272
Polymer-blend solar cells (all-PSCs) based on a copolymer of naphthodithiophene diimide and bithiophene (PNDTI-BT-DT) as a near-infrared absorber as well as an electron acceptor were fabricated in combination with PTB7 as an electron donor. Notably, the external quantum efficiency spectra of the all-PSCs demonstrated photoresponse up to 900 nm with the efficiency of 25% at 800 nm, which is much higher than that for the previously reported all-PSCs. Power conversion efficiency as high as 2.59% was achieved under the irradiation of simulated solar light (AM1.5, 100 mW/cm2). Both PNDTI-BT-DT and PTB7 formed a crystalline structure in the blend films similar to in the pristine films, leading to the efficient charge generation contributed from both polymers.
Co-reporter:Itaru Osaka, Yoshinobu Houchin, Masayuki Yamashita, Takeshi Kakara, Noriko Takemura, Tomoyuki Koganezawa, and Kazuo Takimiya
Macromolecules 2014 Volume 47(Issue 10) pp:3502-3510
Publication Date(Web):May 13, 2014
DOI:10.1021/ma402518d
Semiconducting polymers with alkylated naphtho[1,2-b:5,6-b′]dithiophene (NDT3) and naphtho[2,1-b:6,5-b′]dithiophene (NDT4) are synthesized and characterized. The solubility of the present polymers is significantly improved as compared to the nonalkylated counterparts with preserving the good charge transport properties. Interestingly, the effect of alkylation is found to be quite distinct between the NDT3 and NDT4 cores. In the NDT3-based polymers, alkylation leads to the more ordered backbone structure and thus the increased crystalline order in the thin film. On the other hand, in the NDT4-based polymers, alkylation is detriment to the backbone ordering, which gives rise to the face-on orientation or amorphous like film structure. This difference can be qualitatively explained by the different alkyl placement; all the neighboring alkyl groups are in the anti arrangement in the NDT3-based polymers, whereas the arrangement is a mixture of anti and syn in the NDT4-based polymers, which likely causes steric impact on the backbone. These observations make us better understood how the alkylation affect the ordering structures, which would be an important guideline for the design of superior semiconducting polymers.
Co-reporter:Itaru Osaka ; Takeshi Kakara ; Noriko Takemura ; Tomoyuki Koganezawa
Journal of the American Chemical Society 2013 Volume 135(Issue 24) pp:8834-8837
Publication Date(Web):June 5, 2013
DOI:10.1021/ja404064m
We show that rational functionalization of the naphthodithiophene core in copolymers based on naphthodithiophene and naphthobisthiadiazole improves the solubility without an alteration of the electronic structure. Surprisingly, the introduction of linear alkyl chains brings about a drastic change in polymer orientation into the face-on motif, which is beneficial for the charge transport in solar cells. As a result, the present polymers exhibit high power conversion efficiencies of up to ∼8.2% in conventional single-junction solar cells.
Co-reporter:Yuta Fukutomi ; Masahiro Nakano ; Jian-Yong Hu ; Itaru Osaka
Journal of the American Chemical Society 2013 Volume 135(Issue 31) pp:11445-11448
Publication Date(Web):July 24, 2013
DOI:10.1021/ja404753r
A straightforward synthesis of α,β-unsubstituted and α-halogenated naphtho[2,3-b:6,7-b′]dithiophenediimides (NDTIs) is described. Electrochemical and optical studies of N,N-dioctyl-NDTI demonstrate that the compound has a low-lying LUMO energy level (4.0 eV below the vacuum level) and a small HOMO–LUMO gap (∼2.1 eV). With its interesting electronic and optical properties, in addition to its planar structure, NDTI is a promising building block for the development of novel π-functional materials. In fact, it afforded n-channel, p-channel, and ambipolar materials, depending on the molecular modification.
Co-reporter:Takamichi Mori ; Takeshi Nishimura ; Tatsuya Yamamoto ; Iori Doi ; Eigo Miyazaki ; Itaru Osaka
Journal of the American Chemical Society 2013 Volume 135(Issue 37) pp:13900-13913
Publication Date(Web):August 16, 2013
DOI:10.1021/ja406257u
We describe a new synthetic route to the [1]benzothieno[3,2-b][1]benzothiophene (BTBT) substructure featuring two consecutive thiophene-annulation reactions from o-ethynyl-thioanisole substrates and arylsulfenyl chloride reagents that can be easily derived from arylthiols. The method is particularly suitable for the synthesis of unsymmetrical derivatives, e.g., [1]benzothieno[3,2-b]naphtho[2,3-b]thiophene, [1]benzothieno[3,2-b]anthra[2,3-b]thiophene, and naphtho[3,2-b]thieno[3,2-b]anthra[2,3-b]thiophene, a selenium-containing derivative, [1]benzothieno[3,2-b][1]benzoselenophene. It also allows us to access largely π-extended derivatives with two BTBT substructures, e.g., bis[1]benzothieno[2,3-d:2′,3′-d′]benzo[1,2-b:4,5-b′]dithiophene and bis[1]benzothieno[2,3-d:2′,3′-d′]naphtho[2,3-b:6,7-b′]dithiophene (BBTNDT). It should be emphasized that these new BTBT derivatives are otherwise difficult to be synthesized. In addition, since various substrates and reagents, o-ethynyl-thioanisoles and arylthiols, respectively, can be combined, the method can be regarded as a versatile tool for the development of thienoacene-based organic semiconductors in this class. Among the newly synthesized materials, highly π-extended BBTNDT afforded very high mobility (>5 cm2 V–1 s–1) in its vapor-deposited organic field-effect transistors (OFETs), which is among the highest for unsubstituted acene- or thienoacenes-based organic semiconductors. In fact, the structural analyses of BBTNDT both in the single crystal and thin-film state indicated that an interactive two-dimensional molecular array is realized in the solid state, which rationalize the higher carrier mobility in the BBTNDT-based OFETs.
Co-reporter:Masahiro Nakano, Itaru Osaka and Kazuo Takimiya
Journal of Materials Chemistry A 2015 - vol. 3(Issue 2) pp:NaN290-290
Publication Date(Web):2014/11/03
DOI:10.1039/C4TC02164A
Dibenzo[a,e]pentalene-embedded thienoquinoidals with dicyanomethylene termini were synthesized as new π-extended thienoquinoidals for n-type organic semiconductors. Single crystal X-ray analysis demonstrated that the target molecule has an all trans-polyene structure with reasonable bond-length alternation in the thienoquinoidal strand, indicative of effective extension of the π-conjugation system. Thanks to their π-extended structures, not just the low-lying LUMO energy levels (−4.2 to −4.3 eV) but also relatively high HOMO energy levels (∼−5.6 eV) were characterized by means of cyclic voltammetry. Interestingly, depending on the position of the solubilizing long alkyl groups, they formed H- or J-aggregate-like structures in the thin-film state testified by the thin film absorption spectra. These distinct intermolecular interactions in the thin film state could cause different behaviours in thin-film field-effect transistors; for the former ambipolar characteristics were observed, whereas only n-type response was detected for the latter.
Co-reporter:Wangqiao Chen, Masahiro Nakano, Kazuo Takimiya and Qichun Zhang
Inorganic Chemistry Frontiers 2017 - vol. 4(Issue 5) pp:NaN710-710
Publication Date(Web):2017/01/19
DOI:10.1039/C6QO00871B
Naphtho[2,3-b]thiophene diimide (NTI) was found to be selectively thionated to afford naphtho[2,3-b]thiophene-4,9-dicarboxy-5,8-dithiocarboxydiimide (NTI-2S). By elucidating its electrochemical, optical, and structural properties, the effects of thionation on the molecular electronic structure and crystal structure were discussed. Although thionation can greatly lower the LUMO energy level and enhance the intermolecular interaction in the solid state, its chemical lability is a drawback as an organic semiconducting material.
Co-reporter:Itaru Osaka, Toru Abe, Hiroki Mori, Masahiko Saito, Noriko Takemura, Tomoyuki Koganezawa and Kazuo Takimiya
Journal of Materials Chemistry A 2014 - vol. 2(Issue 13) pp:NaN2312-2312
Publication Date(Web):2014/01/22
DOI:10.1039/C3TC32386B
We present new donor–acceptor semiconducting polymers based on a strong acceptor unit, thieno[3,2-b]thiophene-2,5-dione (TTD). The polymers exhibit a deep LUMO energy level of around −4 eV while preserving a relatively low-lying HOMO energy level of below −5 eV and a quite small optical band gap of 1.2 eV. Interestingly, bottom-gate-top-contact transistor devices based on the polymers demonstrate p-channel behavior with high hole-mobilites of 1.38 cm2 V−1 s−1, whereas top-gate-bottom-contact devices show ambipolar behavior with hole and electron mobilities of ∼0.12 and ∼0.20 cm2 V−1 s−1, respectively. These results indicate the great potential of TTD to be used as the building unit for high-performance semiconducting polymers.
Co-reporter:Jian-Yong Hu, Masahiro Nakano, Itaru Osaka and Kazuo Takimiya
Journal of Materials Chemistry A 2015 - vol. 3(Issue 17) pp:NaN4249-4249
Publication Date(Web):2015/03/24
DOI:10.1039/C5TC00486A
Two new NDTI-based triad-type ambipolar molecular semiconductors (NDTI-BBT and NDTI-BNT) were designed and synthesized. The triads can afford solution-processed OFETs with well-balanced, high hole and electron mobilities, up to 0.25 and 0.16 cm2 V−1 s−1, respectively, which further leads to the successful demonstration of complementary-like inverters with high voltage gains of 281 and 254 in the first and third quadrants, respectively, under ambient conditions.