New C60-containing polymers were synthesized for electron beam lithography. The homo and random copolymers of p-chloromethylstyrene and p-tert-butoxystyrene were produced using a nitroxide-mediated living radical polymerization technique, and then the C60-containing polymers were obtained by the reaction of C60 with the nitroxide-terminated polymers and the subsequent transformation of the tert-butoxy groups to hydroxy groups. The highly sensitive lithographic performance of the resulting electron beam resists led to the fabrication of 50-nm-feature size patterning using the C60-containing copolymers of p-chloromethylstyrene and p-hydroxystyrene.

Novel poly(aryl ether) type dendrimers having photo-cross-linking and thermal de-cross-linking properties were synthesized by a convergent method. A protected A2B monomer, 1-allyloxy-3,5-bis(bromomethyl)benzene, was newly prepared for the dendrimer synthesis. Palladium-catalyzed deprotection of an allyl group proceeded in high yields. The films of dendrimers containing a photoacid generator (PAG) became insoluble in solvents on irradiation. The irradiated films became soluble in solvents after baking at 120–200 °C. The insolubilization and redissolution profiles were strongly affected by irradiation and baking conditions and the generation of the dendrimers. A reaction pathway was studied by TGA and DTA analysis and FT-IR spectroscopy.