Zuoxing Guo

Find an error

Name:
Organization: Jilin University
Department: Key Lab. of Automobile Materials, Ministry of Education, College of Materials Science and Engineering
Title:
Co-reporter:Tingting Li, Huanhuan Li, Zhennan Wu, Hongxia Hao, Jiale Liu, Tingting Huang, Haizhu Sun, Jingping Zhang, Hao Zhang and Zuoxing Guo  
Nanoscale 2015 vol. 7(Issue 9) pp:4171-4178
Publication Date(Web):29 Jan 2015
DOI:10.1039/C4NR06927G
The excellent electrochemical performance of greigite (Fe3S4) coupled with its vast abundance and low toxicity make it a good prospect as an anode material for lithium ion batteries (LIBs). In this research, a simple and feasible approach for producing pure phase, small sized, shape-controllable, and stable Fe3S4 nanoplates (NPs) through hot injection of sulfur solution into Fe(III) solution was demonstrated. The growth of Fe3S4 NPs involves the primary formation of a pyrite (FeS2) nucleus and subsequent Fe(III) doping. The lateral size of the Fe3S4 NPs was controlled further by tuning the experimental variable-dependent reactivity of Fe sources in the nucleation and growth stage. The Fe3S4 NPs embedded in LIBs present a low electrochemical resistance and are highly active in lithiation/delithiation processes.
Co-reporter:L. Zhao, J.G. Sun, Z.X. Guo, G.Q. Miao
Materials Letters 2013 Volume 106() pp:222-224
Publication Date(Web):1 September 2013
DOI:10.1016/j.matlet.2013.04.116
•InxGa1−xAs (x=0.82) detectors with the cut-off wavelength of 2.5 μm grown by low pressure chemical vapor deposition (LP-MOCVD).•The defects structure of a ternary epitaxial layer as discussed deeply.•Various types of defects such as stacking faults as well as 60° and 90° threading dislocations were identified near interface.•The plastic relaxation of strained heterostructures was incompletely strain relaxed by the formation and multiplication of misfit dislocations (MDs).Dislocation behavior in InxGa1−xAs/InP (100) (x=0.82) grown by low pressure chemical vapor deposition (LP-MOCVD) at temperature about 430 °C was analyzed thoroughly by [110] cross-section transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and high resolution transmission electron microscopy (HRTEM). The 2% lattice mismatch between InP (100) and InxGa1−xAs (x=0.82) results in various types of defects such as stacking faults as well as 60° and 90° threading dislocations. Very high density of threading dislocation (TD) was shown in the InxGa1−xAs (x=0.82) epilayer. The epilayer was incompletely strain relaxed by the formation and multiplication of MDs.
Co-reporter:Yuhua Liu, Jiandong Hu, Yaping Zhang, Zuoxing Guo, Yue Yang
Journal of Materials Science & Technology 2011 Volume 27(Issue 7) pp:653-658
Publication Date(Web):2011
DOI:10.1016/S1005-0302(11)60121-7
sodium yttrium(3+) tetrafluoride
Greigite (Fe3S4)
marcasite