Mercouri G. Kanatzidis

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Name: Kanatzidis, Mercouri
Organization: Northwestern University , USA
Department: Department of Chemistry
Title: Professor(PhD)

TOPICS

Co-reporter:Lijiao Ma, Saiful M. Islam, Chengliang Xiao, Jing Zhao, Hongyun Liu, Mengwei Yuan, Genban Sun, Huifeng Li, Shulan Ma, and Mercouri G. Kanatzidis
Journal of the American Chemical Society September 13, 2017 Volume 139(Issue 36) pp:12745-12745
Publication Date(Web):August 7, 2017
DOI:10.1021/jacs.7b07123
We demonstrate fast, highly efficient concurrent removal of toxic oxoanions of Se(VI) (SeO42–) and Se(IV) (SeO32–/HSeO3–) and heavy metal ions of Hg2+, Cu2+, and Cd2+ by the MoS42– intercalated Mg/Al layered double hydroxide (MgAl-MoS4-LDH, abbr. MoS4-LDH). Using the MoS4-LDH as a sorbent, we observe that the presence of Hg2+ ions greatly promotes the capture of SeO42–, while the three metal ions (Hg2+, Cu2+, Cd2+) enable a remarkable improvement in the removal of SeO32–/HSeO3–. For the pair Se(VI)+Hg2+, the MoS4-LDH exhibits outstanding removal rates (>99.9%) for both Hg2+ and Se(VI), compared to 81% removal for SeO42– alone. For individual SeO32– (without metal ions), 99.1% Se(IV) removal is achieved, while ≥99.9% removals are reached in the presence of Hg2+, Cu2+, and Cd2+. Simultaneously, the removal rates for these metal ions are also >99.9%, and nearly all concentrations of the elements can be reduced to <10 ppb, a limit acceptable for drinking water. The maximum sorption capacities for individual Se(VI) and Se(IV) are 85 and 294 mg/g, respectively. The 294 mg/g capacity for Se(IV) reaches a record value, placing the MoS4-LDH among the highest-capacity selenite adsorbing materials described to date. More interestingly, the presence of metal ions extremely accelerates the capture of the selenium oxoanions because of the reactions of the metal ions with the interlayer MoS42– anions. The sorptions of Se(VI)+Hg and Se(IV)+M (M = Hg2+, Cu2+, Cd2+) are exceptionally rapid, showing >99.5% removals for Hg2+ within 1 min and ∼99.0% removal for Se(VI) within 30 min, as well as >99.5% removals for pairs Cu2+ and Se(IV) within 10 min, and Cd2+ and Se(IV) within 30 min. During the sorption of SeO32–/HSeO3–, reduction of Se(IV) occurs to Se0 caused by the S2– sites in MoS42–. Sorption kinetics for the oxoanions follows a pseudo-second-order model consistent with chemisorption. The intercalated material of MoS4-LDH is very promising as a highly effective filter for decontamination of water with toxic Se(IV)/Se(VI) oxoanions along with heavy metals such as Hg2+, Cd2+, and Cu2+.
Co-reporter:Jing Zhao, Saiful M. Islam, Shiqiang Hao, Gangjian Tan, Constantinos C. Stoumpos, Chris Wolverton, Haijie Chen, Zhongzhen Luo, Rukang Li, and Mercouri G. Kanatzidis
Journal of the American Chemical Society September 13, 2017 Volume 139(Issue 36) pp:12601-12601
Publication Date(Web):August 15, 2017
DOI:10.1021/jacs.7b06373
Four new layered chalcogenides Cs1.2Ag0.6Bi3.4S6, Cs1.2Ag0.6Bi3.4Se6, Cs0.6Ag0.8Bi2.2S4, and Cs2Ag2.5Bi8.5Se15 are described. Cs1.2Ag0.6Bi3.4S6 and Cs1.2Ag0.6Bi3.4Se6 are isostructural and have a hexagonal P63/mmc space group; their structures consist of [Ag/Bi]2Q3 (Q = S, Se) quintuple layers intercalated with disordered Cs cations. Cs0.6Ag0.8Bi2.2S4 also adopts a structure with the hexagonal P63/mmc space group and its structure has an [Ag/Bi]3S4 layer intercalated with a Cs layer. Cs1.2Ag0.6Bi3.4S6 and Cs0.6Ag0.8Bi2.2S4 can be ascribed to a new homologous family Ax[MmS1+m] (m = 1, 2, 3···). Cs2Ag2.5Bi7.5Se15 is orthorhombic with Pnnm space group, and it is a new member of the A2[M5+nSe9+n] homology with n = 6. The Cs ions in Cs1.2Ag0.6Bi3.4S6 and Cs0.6Ag0.8Bi2.2S4 can be exchanged with other cations, such as Ag+, Cd2+, Co2+, Pb2+, and Zn2+ forming new phases with tunable band gaps between 0.66 and 1.20 eV. Cs1.2Ag0.6Bi3.4S6 and Cs0.6Ag0.8Bi2.2S4 possess extremely low thermal conductivity (<0.6 W·m–1·K–1).
Co-reporter:Santanu Bag and Mercouri G. Kanatzidis
Journal of the American Chemical Society October 27, 2010 Volume 132(Issue 42) pp:14951-14959
Publication Date(Web):October 6, 2010
DOI:10.1021/ja1059284
We report the synthesis of metal−chalcogenide gels and aerogels from anionic chalcogenide clusters and linking metal ions. Metal ions such as Sb3+ and Sn2+, respectively chelated with tartrate and acetate ligands, react in solution with the chalcogenide clusters to form extended polymeric networks that exhibit gelation phenomena. Chalcogenide cluster anions with different charge densities, such as [Sn2S6]4− and [SnS4]4−, were employed. In situ rheological measurements during gelation showed that a higher charge density on the chalcogenide cluster favors formation of a rigid gel network. Aerogels obtained from the gels after supercritical drying have BET surface areas from 114 to 368 m2/g. Electron microscopy images coupled with nitrogen adsorption measurements showed the pores are micro (below 2 nm), meso (2−50 nm), and macro (above 50 nm) regions. These chalcogels possess band gaps in the range of 1.00−2.00 eV and selectively adsorb polarizable gases. A 2-fold increase in selectivity toward CO2/C2H6 over H2 was observed for the Pt/Sb/Ge4Se10-containing aerogel compared to aerogel containing Pt2Ge4S10. The experimental results suggest that high selectivity in gas adsorption is achievable with high-surface-area chalcogenide materials containing heavy polarizable elements.
Co-reporter:Weijun Ke, Constantinos C. Stoumpos, Ioannis Spanopoulos, Lingling Mao, Michelle Chen, Michael R. Wasielewski, and Mercouri G. Kanatzidis
Journal of the American Chemical Society October 18, 2017 Volume 139(Issue 41) pp:14800-14800
Publication Date(Web):September 27, 2017
DOI:10.1021/jacs.7b09018
Tin-based perovskites have very comparable electronic properties to lead-based perovskites and are regarded as possible lower toxicity alternates for solar cell applications. However, the efficiency of tin-based perovskite solar cells is still low and they exhibit poor air stability. Here, we report lead-free tin-based solar cells with greatly enhanced performance and stability using so-called “hollow” ethylenediammonium and methylammonium tin iodide ({en}MASnI3) perovskite as absorbers. Our results show that en can improve the film morphology and most importantly can serve as a new cation to be incorporated into the 3D MASnI3 lattice. When the cation of en becomes part of the 3D structure, a high density of SnI2 vacancies is created resulting in larger band gap, larger unit cell volume, lower trap-state density, and much longer carrier lifetime compared to classical MASnI3. The best-performing {en}MASnI3 solar cell has achieved a high efficiency of 6.63% with an open circuit voltage of 428.67 mV, a short-circuit current density of 24.28 mA cm–2, and a fill factor of 63.72%. Moreover, the {en}MASnI3 device shows much better air stability than the neat MASnI3 device. Comparable performance is also achieved for cesium tin iodide solar cells with en loading, demonstrating the broad scope of this approach.
Co-reporter:Jing Zhao, Saiful M. Islam, Shiqiang Hao, Gangjian Tan, Xianli Su, Haijie Chen, Wenwen Lin, Rukang Li, Chris Wolverton, and Mercouri G. Kanatzidis
Chemistry of Materials October 10, 2017 Volume 29(Issue 19) pp:8494-8494
Publication Date(Web):September 11, 2017
DOI:10.1021/acs.chemmater.7b03328
Two new compounds CdPbBi4Se8 and CdSnBi4Se8 adopt the pavonite structure type and crystallize in the monoclinic space group C2/m with a = 13.713(3) Å, b = 4.1665(8) Å, c = 15.228(3) Å, β = 115.56(3)° for CdPbBi4Se8; a = 13.679 Å, b = 4.153 Å, c = 15.127 Å, β = 115.51° for CdSnBi4Se8. Their crystal structures are composed of two different types of polyhedral slabs, one containing a mixture of one octahedron [MSe6] block and paired squared pyramids [MSe5], while the other forms distorted galena-type (or NaCl-type) lattices with three [MSe6] octahedral chains (M = Pb, Cd, Bi, Sn). Both CdPbBi4Se8 and CdSnBi4Se8 are stable up to ∼970 K. Density functional theory (DFT) calculations show that both CdPbBi4Se8 and CdSnBi4Se8 are indirect band gap semiconductors. DFT phonon dispersion calculations performed on CdSnBi4Se8 give valuable insights as to the origin of the observed low experimental lattice thermal conductivities of ∼0.58 W m–1 K–1 at 320 K. The title compounds exhibit n-type conduction, and they exhibit promising thermoelectric properties with a maximum thermoelectric figure of merit, ZT, reaching 0.63 for CdPbBi4Se8, and 0.40 for CdSnBi4Se8 at 850 K.
Co-reporter:Chengliang Xiao, Zohreh Hassanzadeh Fard, Debajit Sarma, Tze-Bin Song, Chao Xu, and Mercouri G. Kanatzidis
Journal of the American Chemical Society November 22, 2017 Volume 139(Issue 46) pp:16494-16494
Publication Date(Web):November 6, 2017
DOI:10.1021/jacs.7b10464
The elimination of trivalent minor actinides (Am3+, Cm3+) is of great concern for the safe management and operation of nuclear waste geological repository and environmental remediation. However, because of the effects of protonation, most of the present sorbents exhibit inferior removal properties toward minor actinides at low pH values. Finding stable ion-exchangers with high sorption capacities, fast kinetics, and good removal toward minor actinides from highly acidic solution remains a great challenge. This work reports a new family member of KMS materials with a robust acid-stable layered metal sulfide structure (KInSn2S6, KMS-5) bearing strong affinity toward trivalent minor actinides. KMS-5 can simultaneously separate trivalent 241Am and 152Eu from acidic solutions below pH 2 with high efficiency (>98%). The ion-exchange kinetics is extremely fast (<10 min) and the largest distribution coefficient is as high as 5.91 × 104 mL/g. KMS-5 is also capable of efficiently removing 241Am from acidic solution containing various competitive cations in large excess. In addition, the ion exchange process of 241Am by KMS-5 is reversible and the loaded material can be easily eluted by high concentration of potassium chloride. This work represents the first case for efficient minor actinides removal from highly acidic solution using layered metal sulfide materials.
Co-reporter:Haijie Chen, Awadhesh Narayan, Constantinos C. Stoumpos, Jing Zhao, Fei Han, Duck Young Chung, Lucas K. Wagner, Wai-Kwong Kwok, and Mercouri G. Kanatzidis
Inorganic Chemistry November 20, 2017 Volume 56(Issue 22) pp:14251-14251
Publication Date(Web):November 8, 2017
DOI:10.1021/acs.inorgchem.7b02352
We report the discovery of two ternary Zintl phases Ba3Sn3Sb4 and Ba7–xSn11Sb15–y (x = 0.4, y = 0.6). Ba3Sn3Sb4 adopts the monoclinic space group P21/c with a = 14.669(3) Å, b = 6.9649(14) Å, c = 13.629(3) Å, and β = 104.98(3)°. It features a unique corrugated two-dimensional (2D) structure consisting of [Sn3Sb4]6– layers extending along the ab-plane with Ba2+ atoms sandwiched between them. The nonstoichiometric Ba6.6Sn11Sb14.4 has a complex one-dimensional (1D) structure adopting the orthorhombic space group Pnma, with unit cell parameters a = 37.964(8) Å, b = 4.4090(9) Å, and c = 24.682(5) Å. It consists of large double Sn–Sb ribbons separated by Ba2+ atoms. Ba3Sn3Sb4 is an n-type semiconductor which has a narrow energy gap of ∼0.18 eV and a room temperature carrier concentration of ∼4.2 × 1018 cm–3. Ba6.6Sn11Sb14.4 is determined to be a metal with electrons being the dominant carriers.
Co-reporter:Chan Myae Myae Soe, Constantinos C. Stoumpos, Mikaël Kepenekian, Boubacar Traoré, Hsinhan Tsai, Wanyi Nie, Binghao Wang, Claudine Katan, Ram Seshadri, Aditya D. Mohite, Jacky Even, Tobin J. Marks, and Mercouri G. Kanatzidis
Journal of the American Chemical Society November 15, 2017 Volume 139(Issue 45) pp:16297-16297
Publication Date(Web):November 2, 2017
DOI:10.1021/jacs.7b09096
We present the new homologous series (C(NH2)3)(CH3NH3)nPbnI3n+1 (n = 1, 2, 3) of layered 2D perovskites. Structural characterization by single-crystal X-ray diffraction reveals that these compounds adopt an unprecedented structure type, which is stabilized by the alternating ordering of the guanidinium and methylammonium cations in the interlayer space (ACI). Compared to the more common Ruddlesden–Popper (RP) 2D perovskites, the ACI perovskites have a different stacking motif and adopt a higher crystal symmetry. The higher symmetry of the ACI perovskites is expressed in their physical properties, which show a characteristic decrease of the bandgap with respect to their RP perovskite counterparts with the same perovskite layer thickness (n). The compounds show a monotonic decrease in the optical gap as n increases: Eg = 2.27 eV for n = 1 to Eg = 1.99 eV for n = 2 and Eg = 1.73 eV for n = 3, which show slightly narrower gaps compared to the corresponding RP perovskites. First-principles theoretical electronic structure calculations confirm the experimental optical gap trends suggesting that the ACI perovskites are direct bandgap semiconductors with wide valence and conduction bandwidths. To assess the potential of the ACI perovskites toward solar cell applications, we studied the (C(NH2)3)(CH3NH3)3Pb3I10 (n = 3) compound. Compact thin films from the (C(NH2)3)(CH3NH3)3Pb3I10 compound with excellent surface coverage can be obtained from the antisolvent dripping method. Planar photovoltaic devices from optimized ACI perovskite films yield a power-conversion-efficiency of 7.26% with a high open-circuit voltage of ∼1 V and a striking fill factor of ∼80%.
Co-reporter:Jing Zhao, Saiful M. Islam, Oleg Y. Kontsevoi, Gangjian Tan, Constantinos C. Stoumpos, Haijie Chen, R. K. Li, and Mercouri G. Kanatzidis
Journal of the American Chemical Society May 24, 2017 Volume 139(Issue 20) pp:6978-6978
Publication Date(Web):May 3, 2017
DOI:10.1021/jacs.7b02243
We report the new layered chalcogenides AxCdxBi4–xQ6 (A = Cs, Rb, K; Q = S and A = Cs; Q = Se). All compounds are isostructural crystallizing in the orthorhombic space group Cmcm, with a = 4.0216(8) Å, b = 6.9537(14) Å, c = 24.203(5) Å for Cs1.43Cd1.43Bi2.57S6 (x = 1.43); a = 3.9968(8) Å, b = 6.9243(14) Å, c = 23.700(5) Å for Rb1.54Cd1.54Bi2.46S6 (x = 1.54); a = 3.9986(8) Å, b = 6.9200(14) Å, c = 23.184(5) Å for K1.83Cd1.83Bi2.17S6 (x = 1.83) and a = 4.1363(8) Å, b = 7.1476(14) Å, c = 25.047(5) Å for Cs1.13Cd1.13Bi2.87Se6 (x = 1.13). These structures are intercalated derivatives of the Bi2Se3 structure by way of replacing some Bi3+ atoms with divalent Cd2+ atoms forming negatively charged Bi2Se3-type quintuple [CdxBi2–xSe3]x− layers. The bandgaps of these compounds are between 1.00 eV for Q = Se and 1.37 eV for Q = S. Electronic band structure calculations at the density functional theory (DFT) level indicate Cs1.13Cd1.13Bi2.87Se6 and Cs1.43Cd1.43Bi2.57S6 to be direct band gap semiconductors. Polycrystalline Cs1.43Cd1.43Bi2.57S6 samples show n-type conduction and an extremely low thermal conductivity of 0.33 W·m–1·K–1 at 773 K. The cesium ions between the layers of Cs1.43Cd1.43Bi2.57S6 are mobile and can be topotactically exchanged with Pb2+, Zn2+, Co2+ and Cd2+ in aqueous solution. The intercalation of metal cations presents a direct “soft chemical” route to create new materials.
Co-reporter:Duyen H. Cao, Constantinos C. Stoumpos, Takamichi Yokoyama, Jenna L. Logsdon, Tze-Bin Song, Omar K. Farha, Michael R. Wasielewski, Joseph T. Hupp, and Mercouri G. Kanatzidis
ACS Energy Letters May 12, 2017 Volume 2(Issue 5) pp:982-982
Publication Date(Web):April 5, 2017
DOI:10.1021/acsenergylett.7b00202
Low electrical resistivity (high dark carrier concentration) of CH3NH3SnI3 often leads to short-circuiting in solar cells, and appropriate thin-film modifications are required to ensure functional devices. The long-term durability of organic–inorganic perovskite solar cells necessitates the protection of perovskite thin films from moisture to prevent material decomposition. Herein, we report that the electrical resistivity and the moisture stability of two-dimensional (2D) Ruddlesden–Popper (CH3(CH2)3NH3)2(CH3NH3)n−1SnnI3n+1 perovskites are considerably improved compared to those of the three-dimensional (3D) CH3NH3SnI3 perovskite and subsequently show the solar cell fabrication using a simple one-step spin-coating method. These 2D perovskites are semiconductors with optical band gaps progressively decreasing from 1.83 eV (n = 1) to 1.20 eV (n = ∞). The n = 3 and n = 4 members with optimal band gaps of 1.50 and 1.42 eV for solar cells, respectively, were thus chosen for in-depth studies. We demonstrate that thin films of 2D perovskites orient the {(CH3NH3)n−1SnnI3n+1}2– slabs parallel to the substrate when dimethyl sulfoxide solvent is used for deposition, and this orientation can be flipped to perpendicular when N,N-dimethylformamide solvent is used. We find that high-purity, single-phase films can be grown only by using precursor solutions of “pre-synthesized” single-phase bulk perovskite materials. We introduce for the first time the use of triethylphosphine as an effective antioxidant, which suppresses the doping level of the 2D films and improves film morphology. The resulting semiconducting 2D Sn-based iodide perovskite films were incorporated in solar cells yielding a power conversion efficiency of 2.5% from the Sn4I13 member. From the temporal stability standpoint, the 2D Sn perovskite solar cells outperform their 3D analogs.
Co-reporter:Xing-Hui Qi, Ke-Zhao Du, Mei-Ling Feng, Yu-Jie Gao, Xiao-Ying Huang, and Mercouri G. Kanatzidis
Journal of the American Chemical Society March 29, 2017 Volume 139(Issue 12) pp:4314-4314
Publication Date(Web):March 6, 2017
DOI:10.1021/jacs.7b00565
Exploring new ion-exchangers for the recovery of rare earth elements (REEs) and recycling is worthwhile for the high-tech industry and an eco-friendly sustainable economy. The efficient enrichment of low concentration REE from complex aqueous solutions containing large excess of competitive ions is challenging. Here we present a chalcogenide example as a superior REE ion-exchanger efficiently removing them from very complex aqueous solutions, (Me2NH2)1.33(Me3NH)0.67 Sn3S7·1.25H2O (FJSM-SnS). The material exhibits fast and efficient ion exchange behavior with short equilibrium time (<5 min), high adsorption capacity (139 mg/g for Eu, 147 mg/g for Tb, 126 mg/g for Nd), wide pH resistance (1.9–8.5), the largest distribution coefficient (Kd) value of 6.5 × 106 mL/g, good selectivity against Al3+, Fe3+, and Na+ ions, and high recovery rate (>99%) at low concentrations. Moreover, after ion-exchange, the REE in corresponding exchanged products could be easily recovered by elution. FJSM-SnS has superior capacity and faster absorption kinetics than other states of the artificial REE sorbents such as Al2O3/EG, clay minerals, zeolite, and activated carbon.
Co-reporter:Daniel E. Bugaris, Christos D. Malliakas, Fei Han, Nicholas P. Calta, Mihai Sturza, Matthew J. Krogstad, Raymond Osborn, Stephan Rosenkranz, Jacob P. C. Ruff, Giancarlo Trimarchi, Sergey L. Bud’ko, Mahalingam Balasubramanian, Duck Young Chung, and Mercouri G. Kanatzidis
Journal of the American Chemical Society March 22, 2017 Volume 139(Issue 11) pp:4130-4130
Publication Date(Web):February 16, 2017
DOI:10.1021/jacs.7b00284
A new polymorph of the RE2Ru3Ge5 (RE = Pr, Sm, Dy) compounds has been grown as single crystals via an indium flux. These compounds crystallize in tetragonal space group P4/mnc with the Sc2Fe3Si5-type structure, having lattice parameters a = 11.020(2) Å and c = 5.853(1) Å for RE = Pr, a = 10.982(2) Å and c = 5.777(1) Å for RE = Sm, and a = 10.927(2) Å and c = 5.697(1) Å for RE = Dy. These materials exhibit a structural transition at low temperature, which is attributed to an apparent charge density wave (CDW). Both the high-temperature average crystal structure and the low-temperature incommensurately modulated crystal structure (for Sm2Ru3Ge5 as a representative) have been solved. The charge density wave order is manifested by periodic distortions of the one-dimensional zigzag Ge chains. From X-ray diffraction, charge transport (electrical resistivity, Hall effect, magnetoresistance), magnetic measurements, and heat capacity, the ordering temperatures (TCDW) observed in the Pr and Sm analogues are ∼200 and ∼175 K, respectively. The charge transport measurement results indicate an electronic state transition happening simultaneously with the CDW transition. X-ray absorption near-edge spectroscopy (XANES) and electronic band structure results are also reported.
Co-reporter:Mercouri G. Kanatzidis
Inorganic Chemistry March 20, 2017 Volume 56(Issue 6) pp:3158-3158
Publication Date(Web):March 9, 2017
DOI:10.1021/acs.inorgchem.7b00188
The discovery of new materials and their efficient syntheses is a fundamental goal of chemistry. A related objective is to identify foundational and rational approaches to enhance the art of synthesis by combining the exquisite predictability of organic synthesis with the high yields of solid-state chemistry. In contrast to so-called solid-state methods, inorganic syntheses in liquid fluxes permit bond formation, framework assembly, and crystallization at lower temperatures because of facile diffusion and chemical reactions with and within the flux itself. The fluxes are bona fide solvents similar to conventional organic or aqueous solvents. Such reactions can produce a wide range of materials, often metastable, from oxides to intermetallics, but typically the formation mechanisms are poorly understood. This article discusses how one can design, perform, observe, understand, and engineer the formation of compounds from inorganic melts. The focus is also design concepts such as “dimensional reduction”, “phase homologies”, and “panoramic synthesis”, and their broad applicability. When well-defined building blocks are present and stable in the reaction, prospects for increased structural diversity and product control increase substantially. Common structural motifs within these materials systems may be related to structural precursors in the melt that may be controlled by tuning reaction conditions and composition. Stabilization of a particular building block is often accomplished with tuning of the flux composition, which controls the Lewis basicity and redox potential. In such tunable and dynamic fluxes, the synthesis can be directed toward new materials. Using complementary techniques of in situ X-ray diffraction, we can create time-dependent maps of reaction space and probe the mobile species present in melts. Certain thoughts toward the ultimate goal of targeted materials synthesis by controlling inorganic melt chemistry are discussed.
Co-reporter:Jian Liu, Kai He, Weiqiang Wu, Tze-Bin Song, and Mercouri G. Kanatzidis
Journal of the American Chemical Society March 1, 2017 Volume 139(Issue 8) pp:2900-2900
Publication Date(Web):February 13, 2017
DOI:10.1021/jacs.6b13279
We report a unique reaction type for facile synthesis of ultrafine and well-dispersed Pt nanoparticles supported on chalcogel surfaces. The nanoparticles are obtained by in situ Pt2+ reduction of a chalcogel network formed by the metathesis reaction between K2PtCl4 and Na4SnS4. The rapid catalytic ability of the chalcogel-supported Pt nanoparticles is demonstrated in a recyclable manner by using 4-nitrophenol reduction as a probe reaction.
Co-reporter:Yihui He, Oleg Y. Kontsevoi, Constantinos C. Stoumpos, Giancarlo G. Trimarchi, Saiful M. Islam, Zhifu Liu, Svetlana S. Kostina, Sanjib Das, Joon-Il Kim, Wenwen Lin, Bruce W. Wessels, and Mercouri G. Kanatzidis
Journal of the American Chemical Society June 14, 2017 Volume 139(Issue 23) pp:7939-7939
Publication Date(Web):May 15, 2017
DOI:10.1021/jacs.7b03174
The high Z chalcohalides Hg3Q2I2 (Q = S, Se, and Te) can be regarded as of antiperovskite structure with ordered vacancies and are demonstrated to be very promising candidates for X- and γ-ray semiconductor detectors. Depending on Q, the ordering of the Hg vacancies in these defect antiperovskites varies and yields a rich family of distinct crystal structures ranging from zero-dimensional to three-dimensional, with a dramatic effect on the properties of each compound. All three Hg3Q2I2 compounds show very suitable optical, electrical, and good mechanical properties required for radiation detection at room temperature. These compounds possess a high density (>7 g/cm3) and wide bandgaps (>1.9 eV), showing great stopping power for hard radiation and high intrinsic electrical resistivity, over 1011 Ω cm. Large single crystals are grown using the vapor transport method, and each material shows excellent photo sensitivity under energetic photons. Detectors made from thin Hg3Q2I2 crystals show reasonable response under a series of radiation sources, including 241Am and 57Co radiation. The dimensionality of Hg–Q motifs (in terms of ordering patterns of Hg vacancies) has a strong influence on the conduction band structure, which gives the quasi one-dimensional Hg3Se2I2 a more prominently dispersive conduction band structure and leads to a low electron effective mass (0.20 m0). For Hg3Se2I2 detectors, spectroscopic resolution is achieved for both 241Am α particles (5.49 MeV) and 241Am γ-rays (59.5 keV), with full widths at half-maximum (FWHM, in percentage) of 19% and 50%, respectively. The carrier mobility-lifetime μτ product for Hg3Q2I2 detectors is achieved as 10–5–10–6 cm2/V. The electron mobility for Hg3Se2I2 is estimated as 104 ± 12 cm2/(V·s). On the basis of these results, Hg3Se2I2 is the most promising for room-temperature radiation detection.
Co-reporter:Alexander J. E. Rettie, Mihai Sturza, Christos D. Malliakas, Antia S. Botana, Duck Young Chung, and Mercouri G. Kanatzidis
Chemistry of Materials July 25, 2017 Volume 29(Issue 14) pp:6114-6114
Publication Date(Web):June 21, 2017
DOI:10.1021/acs.chemmater.7b02117
The two-dimensional material KCu3–xSe2 was synthesized using both a K2Se3 flux and directly from the elements. It crystallizes in the CsAg3S2 structure (monoclinic space group C2/m with a = 15.417(3) Å, b = 4.0742(8) Å, c = 8.3190(17) Å, and β = 112.94(3)°), and single-crystal refinement revealed infinite copper-deficient [Cu3–xSe2]− layers separated by K+ ions. Thermal analysis indicated that KCu3–xSe2 melts congruently at ∼755 °C. UV–vis spectroscopy showed an optical band gap of ∼1.35 eV that is direct in nature, as confirmed by electronic structure calculations. Electronic transport measurements on single crystals yielded an in-plane resistivity of ∼6 × 10–1 Ω cm at 300 K that has a complex temperature dependence. The results of Seebeck coefficient measurements were consistent with a doped p-type semiconductor (S = +214 μV K–1 at 300 K), with doping being attributed to copper vacancies. Transport is dominated by low-mobility (on the order of 1 cm2 V–1 s–1) holes caused by relatively flat valence bands with substantial Cu 3d character and a significant concentration of Cu ion vacancy defects (p ∼ 1019 cm–3) in this material. Electronic band structure calculations showed that electrons should be significantly more mobile in this structure type.
Co-reporter:Wenwen Lin, Constantinos C. Stoumpos, Zhifu Liu, Sanjib Das, Oleg Y. Kontsevoi, Yihui He, Christos D. Malliakas, Haijie Chen, Bruce W. Wessels, and Mercouri G. Kanatzidis
ACS Photonics July 19, 2017 Volume 4(Issue 7) pp:1805-1805
Publication Date(Web):June 8, 2017
DOI:10.1021/acsphotonics.7b00388
The semiconductor TlSn2I5 with a two-dimensional crystal structure and an antiperovskite topology is a promising novel detection material. The compound crystallizes in the I4/mcm space group, has an indirect band gap of 2.14 eV, and melts congruently at 314 °C. Electronic band structure calculations reveal that the most facile electron transport is along the ab layered plane. Compared to CH3NH3PbX3 (X = Br, I), TlSn2I5 features higher long-term stability, higher photon stopping power (average atomic number of 55), higher resistivity (∼1010 Ω·cm), and robust mechanical properties. Centimeter-size TlSn2I5 single crystals grown from the melt by the Bridgman method can be used to fabricate detector devices, which detect Ag Kα X-rays (22 keV), 57Co γ-rays (122 keV), and 241Am α-particles (5.5 MeV). The mobility-lifetime product and mobility for electrons were estimated to be 1.1 × 10–3 cm2·V–1 and 94 ± 16 cm2·V–1·s–1, respectively. Unlike other halide perovskites, TlSn2I5 shows no signs of ionic polarization under long-term, high-voltage bias.Keywords: crystal growth; halide perovskite; hard radiation detection; photon detection; semiconductor detector; γ-ray;
Co-reporter:Takamichi Yokoyama;Tze-Bin Song;Duyen H. Cao;Constantinos C. Stoumpos;Shinji Aramaki
ACS Energy Letters - New in 2016 January 13, 2017 Volume 2(Issue 1) pp:22-28
Publication Date(Web):December 2, 2016
DOI:10.1021/acsenergylett.6b00513
A low hole carrier concentration in methylammonium tin halide (MASnX3) perovskite semiconductors is a prerequisite for a nonshorting solar cell device. In-depth film characterizations were performed on MASnI3–xBrx films, fabricated by both a low-temperature vapor-assisted solution process (LT-VASP) and conventional one-step methods, to reveal the origin of the lower hole carrier concentration from films of the former approach. We found that the vaporization of CH3NH3I solid at 150 °C, the temperature at which the LT-VASP occurs, does not supply iodine to the SnX2 (X = Br, I) films. As a result, secondary phases form aside from the desired MASnX3 perovskite; the secondary phases are suggested to be SnO and Sn(OH)2 via a proposed reaction pathway and are further supported by X-ray photoemission spectroscopy (XPS). These nonperovskite Sn2+ phases are beneficial because they assist in achieving the lower hole-doping levels in LT-VASP films. Remarkably, LT-VASP devices demonstrate improved air stability. Overall, our findings suggest that not only the commonly used SnF2 but also other divalent Sn compounds could serve as Sn vacancy suppressors. Further work on modulating the perovskite film compositions could realize more efficient and stable tin-based perovskite solar cells.
Co-reporter:Alyssa S. Haynes, Constantinos C. Stoumpos, Haijie Chen, Daniel Chica, and Mercouri G. Kanatzidis
Journal of the American Chemical Society August 9, 2017 Volume 139(Issue 31) pp:10814-10814
Publication Date(Web):June 30, 2017
DOI:10.1021/jacs.7b05423
The common approach to the synthesis of a new material involves reactions held at high temperatures under certain conditions such as heating in a robust vessel in the dark for a period until it is judged to have concluded. Analysis of the vessel contents afterward provides knowledge of the final products only. Intermediates that may form during the reaction process remain unknown. This lack of awareness of transient intermediates represents lost opportunities for discovering materials or understanding how the final products form. Here we present new results using an emerging in situ monitoring approach that shows high potential in discovering new compounds. In situ synchrotron X-ray diffraction studies were conducted in the Cs/Sn/P/Se system. Powder mixtures of Cs2Se2, Sn, and PSe2 were heated to 650 °C and then cooled to room temperature while acquiring consecutive in situ synchrotron diffraction patterns from the beginning to the end of the reaction process. The diffraction data was translated into the relationship of phases present versus temperature. Seven known crystalline phases were observed to form on warming in the experiment: Sn, Cs2Se3, Cs4Se16, Cs2Se5, Cs2Sn2Se6, Cs4P2Se9, and Cs2P2Se8. Six unknown phases were also detected; using the in situ synchrotron data as a guide three of them were isolated and characterized ex situ. These are Cs4Sn(P2Se6)2, α-Cs2SnP2Se6, and Cs4(Sn3Se8)[Sn(P2Se6)]2. Cs4(Sn3Se8)[Sn(P2Se6)]2 is a two-dimensional compound that behaves as an n-type doped semiconductor below 50 K and acts more like a semimetal at higher temperatures. Because all crystalline phases are revealed during the reaction, we call this approach “panoramic synthesis”.
Co-reporter:Lingling Mao, Yilei Wu, Constantinos C. Stoumpos, Boubacar Traore, Claudine Katan, Jacky Even, Michael R. Wasielewski, and Mercouri G. Kanatzidis
Journal of the American Chemical Society August 30, 2017 Volume 139(Issue 34) pp:11956-11956
Publication Date(Web):July 26, 2017
DOI:10.1021/jacs.7b06143
Two-dimensional (2D) hybrid halide perovskites come as a family (B)2(A)n−1PbnX3n+1 (B and A= cations; X= halide). These perovskites are promising semiconductors for solar cells and optoelectronic applications. Among the fascinating properties of these materials is white-light emission, which has been mostly observed in single-layered 2D lead bromide or chloride systems (n = 1), where the broad emission comes from the transient photoexcited states generated by self-trapped excitons (STEs) from structural distortion. Here we report a multilayered 2D perovskite (n = 3) exhibiting a tunable white-light emission. Ethylammonium (EA+) can stabilize the 2D perovskite structure in EA4Pb3Br10–xClx (x = 0, 2, 4, 6, 8, 9.5, and 10) with EA+ being both the A and B cations in this system. Because of the larger size of EA, these materials show a high distortion level in their inorganic structures, with EA4Pb3Cl10 having a much larger distortion than that of EA4Pb3Br10, which results in broadband white-light emission of EA4Pb3Cl10 in contrast to narrow blue emission of EA4Pb3Br10. The average lifetime of the series decreases gradually from the Cl end to the Br end, indicating that the larger distortion also prolongs the lifetime (more STE states). The band gap of EA4Pb3Br10–xClx ranges from 3.45 eV (x = 10) to 2.75 eV (x = 0), following Vegard’s law. First-principles density functional theory calculations (DFT) show that both EA4Pb3Cl10 and EA4Pb3Br10 are direct band gap semiconductors. The color rendering index (CRI) of the series improves from 66 (EA4Pb3Cl10) to 83 (EA4Pb3Br0.5Cl9.5), displaying high tunability and versatility of the title compounds.
Co-reporter:Haijie Chen, Christos D. Malliakas, Awadhesh Narayan, Lei Fang, Duck Young Chung, Lucas K. Wagner, Wai-Kwong Kwok, and Mercouri G. Kanatzidis
Journal of the American Chemical Society August 16, 2017 Volume 139(Issue 32) pp:11271-11271
Publication Date(Web):July 17, 2017
DOI:10.1021/jacs.7b06446
We report a new two-dimensional compound, Pb3–xSb1+xS4Te2−δ, that has a charge density wave (CDW) at room temperature. The CDW is incommensurate with q-vector of 0.248(6)a* + 0.246(8)b* + 0.387(9)c* for x = 0.29(2) and δ = 0.37(3) due to positional and occupational long-range ordering of Te atoms in the sheets. The modulated structure was refined from the single-crystal X-ray diffraction data with a superspace group P1̅(αβγ)0 using (3 + 1)-dimensional crystallography. The resistivity increases with decreasing temperature, suggesting semiconducting behavior. The transition temperature (TCDW) of the CDW is ∼345 K, above which the Te square sheets become disordered with no q-vector. First-principles density functional theory calculations on the undistorted structure and an approximate commensurate supercell reveal that the gap is due to the structure modulation.
Co-reporter:Tze-Bin Song, Takamichi Yokoyama, Shinji Aramaki, and Mercouri G. Kanatzidis
ACS Energy Letters April 14, 2017 Volume 2(Issue 4) pp:897-897
Publication Date(Web):March 20, 2017
DOI:10.1021/acsenergylett.7b00171
Sn-based halide perovskite materials have attracted tremendous attention and have been employed successfully in solar cells. However, their high conductivities resulting from the unstable divalent Sn state in the structure cause poor device performance and poor reproducibility. Herein, we used excess tin iodide (SnI2) in Sn-based halide perovskite solar cells (ASnI3, A = Cs, methylammonium, and formamidinium tin iodide as the representative light absorbers) combined with a reducing atmosphere to stabilize the Sn2+ state. Excess SnI2 can disperse uniformly into the perovskite films and functions as a compensator as well as a suppressor of Sn2+ vacancies, thereby effectively reducing the p-type conductivity. This process significantly improved the solar cell performances of all the ASnI3 materials on mesoporous TiO2. Optimized CsSnI3 devices achieved a maximum power conversion efficiency of 4.81%, which is the highest among all inorganic Pb-free perovskite solar cells to date.
Co-reporter:Lingling Mao, Yilei Wu, Constantinos C. Stoumpos, Michael R. Wasielewski, and Mercouri G. Kanatzidis
Journal of the American Chemical Society April 12, 2017 Volume 139(Issue 14) pp:5210-5210
Publication Date(Web):March 17, 2017
DOI:10.1021/jacs.7b01312
Hybrid inorganic–organic perovskites are developing rapidly as high performance semiconductors. Recently, two-dimensional (2D) perovskites were found to have white-light, broadband emission in the visible range that was attributed mainly to the role of self-trapped excitons (STEs). Here, we describe three new 2D lead bromide perovskites incorporating a series of bifunctional ammonium dications as templates which also emit white light: (1) α-(DMEN)PbBr4 (DMEN = 2-(dimethylamino)ethylamine), which adopts a unique corrugated layered structure in space group Pbca with unit cell a = 18.901(4) Å, b = 11.782(2) Å, and c = 23.680(5) Å; (2) (DMAPA)PbBr4 (DMAPA = 3-(dimethylamino)-1-propylamine), which crystallizes in P21/c with a = 10.717(2) Å, b = 11.735(2) Å, c = 12.127(2) Å, and β = 111.53(3)°; and (3) (DMABA)PbBr4 (DMABA = 4-dimethylaminobutylamine), which adopts Aba2 with a = 41.685(8) Å, b = 23.962(5) Å, and c = 12.000(2) Å. Photoluminescence (PL) studies show a correlation between the distortion of the “PbBr6” octahedron in the 2D layer and the broadening of PL emission, with the most distorted structure having the broadest emission (183 nm full width at half-maximum) and longest lifetime (τavg = 1.39 ns). The most distorted member α-(DMEN)PbBr4 exhibits white-light emission with a color rendering index (CRI) of 73 which is similar to a fluorescent light source and correlated color temperature (CCT) of 7863 K, producing “cold” white light.
Co-reporter:Constantinos C. StoumposLingling Mao, Christos D. Malliakas, Mercouri G. Kanatzidis
Inorganic Chemistry 2017 Volume 56(Issue 1) pp:56-73
Publication Date(Web):December 20, 2016
DOI:10.1021/acs.inorgchem.6b02764
The present study deals with the structural characterization and classification of the novel compounds 1–8 into perovskite subclasses and proceeds in extracting the structure–band gap relationships between them. The compounds were obtained from the employment of small, 3–5-atom-wide organic ammonium ions seeking to discover new perovskite-like compounds. The compounds reported here adopt unique or rare structure types akin to the prototype structure perovskite. When trimethylammonium (TMA) was employed, we obtained TMASnI3 (1), which is our reference compound for a “perovskitoid” structure of face-sharing octahedra. The compounds EASnI3 (2b), GASnI3 (3a), ACASnI3 (4), and IMSnI3 (5) obtained from the use of ethylammonium (EA), guanidinium (GA), acetamidinium (ACA), and imidazolium (IM) cations, respectively, represent the first entries of the so-called “hexagonal perovskite polytypes” in the hybrid halide perovskite library. The hexagonal perovskites define a new family of hybrid halide perovskites with a crystal structure that emerges from a blend of corner- and face-sharing octahedral connections in various proportions. The small organic cations can also stabilize a second structural type characterized by a crystal lattice with reduced dimensionality. These compounds include the two-dimensional (2D) perovskites GA2SnI4 (3b) and IPA3Sn2I7 (6b) and the one-dimensional (1D) perovskite IPA3SnI5 (6a). The known 2D perovskite BA2MASn2I7 (7) and the related all-inorganic 1D perovskite “RbSnF2I” (8) have also been synthesized. All compounds have been identified as medium-to-wide-band-gap semiconductors in the range of Eg = 1.90–2.40 eV, with the band gap progressively decreasing with increased corner-sharing functionality and increased torsion angle in the octahedral connectivity.
Co-reporter:Wayne L. Gladfelter and Mercouri G. Kanatzidis
Inorganic Chemistry 2017 Volume 56(Issue 1) pp:1-2
Publication Date(Web):January 3, 2017
DOI:10.1021/acs.inorgchem.6b02910
Co-reporter:Xiaofeng Qiu, Bingqiang Cao, Shuai Yuan, Xiangfeng Chen, Zhiwen Qiu, Yanan Jiang, Qian Ye, Hongqiang Wang, Haibo Zeng, Jian Liu, Mercouri G. Kanatzidis
Solar Energy Materials and Solar Cells 2017 Volume 159() pp:227-234
Publication Date(Web):January 2017
DOI:10.1016/j.solmat.2016.09.022
•Discovery of the phase conversion from unstable CsSnI3 to air-stable Cs2SnI6 at room temperature.•Cs2SnI6 with proper band gap and high absorption coefficient is a very promising solar cell light absorber.•The first Cs2SnI6 based solar cell with PCE of 1% was achieved.All-inorganic and lead-free cesium tin halides (CsSnX3, X=Cl, Br, I) are highly desirable for substituting the organolead halide perovskite solar cells. However, the poor stability of CsSnX3 perovskites has so far prevented the fabrication of devices that can withstand sustained operation under normal conditions. In this paper, a two-step sequential deposition method is developed to grow high-quality B-γ-CsSnI3 thin films and their unique phase change in atmosphere is explored in detail. We find the spontaneous oxidative conversion from unstable B-γ-CsSnI3 to air-stable Cs2SnI6 in air. Allowing the phase conversion of the CsSnI3 film to evolve in ambient air it gives the semiconducting perovskite Cs2SnI6 with a bandgap of 1.48 eV and high absorption coefficient (over 105 cm−1 from 1.7 eV). More importantly, the Cs2SnI6 film, for the first time, is adopted as a light absorber layer for a lead-free perovskite solar cell and a preliminary estimate of the power conversion efficiency (PCE) about 1% with open-circuit voltage of 0.51 V and short-circuit current of 5.41 mA/cm2 is realized by optimizing the perovskite absorber thickness. According to the bandgap and the Shockley-Queisser limit, such inorganic perovskite solar cell with higher efficiency and pronounced stability can be expected by material quality improvement and device engineering.
Co-reporter:Jing Zhao, Saiful M. Islam, Gangjian Tan, Shiqiang Hao, Chris WolvertonR. K. Li, Mercouri G. Kanatzidis
Chemistry of Materials 2017 Volume 29(Issue 4) pp:
Publication Date(Web):January 10, 2017
DOI:10.1021/acs.chemmater.6b05298
New quaternary chalcogenide Cs4Cu3Bi9S17 has been synthesized by solid state reaction in a vacuum-sealed silica tube. Cs4Cu3Bi9S17 adopts monoclinic space group P21/m, with the following dimensions: a = 20.006(4) Å, b = 4.0556(8) Å, c = 22.279(5) Å, and β = 96.921°. The crystal structure of Cs4Cu3Bi9S17 features a unique three-dimensional framework consisting of interconnected Bi2Te3- and CdI2-type fragments forming three different-sized tunnels running parallel to the b-axis. The tunnels are filled with different numbers (1, 2, or 4) of Cs atoms. Cs4Cu3Bi9S17 is stable in air at room temperature, and differential thermal analysis showed that it decomposes at elevated temperatures. Cs4Cu3Bi9S17 is a semiconductor with a direct optical band gap of 0.9 eV, which is in agreement with density functional theory calculations. Electrical conductivity and Seebeck coefficient measurements show n-type semiconductor behavior. The electrical conductivity is 10–4 S/cm at 300 K and increases to 0.9 S/cm at 773 K. Cs4Cu3Bi9S17 possesses a very low thermal conductivity of 0.71 W m–1 K–1 at room temperature that decreases linearly with an increase in temperature to 0.46 W m–1 K–1 at 773 K. The low thermal conductivity shows the promise of Cs4Cu3Bi9S17 as a new thermoelectric material with appropriate doping.
Co-reporter:Gang Zheng;Xianli Su;Hongyao Xie;Yuejiao Shu;Tao Liang;Xiaoyu She;Wei Liu;Yonggao Yan;Qingjie Zhang;Ctirad Uher;Xinfeng Tang
Energy & Environmental Science (2008-Present) 2017 vol. 10(Issue 12) pp:2638-2652
Publication Date(Web):2017/12/06
DOI:10.1039/C7EE02677C
The traditional zone melting (ZM) method for the fabrication of state of the art Bi2Te3-based thermoelectric materials has long been considered a time and energy intensive process. Herein, a combustion synthesis known as the thermally induced flash synthesis (TIFS) is employed to synthesize high performance p-type BiSbTe alloys within 20 min compared to tens of hours for the ZM samples. The thermodynamic parameters and phase transformation mechanism during the TIFS process were systematically studied for the first time. TIFS combined with plasma activated sintering (PAS) results in a single phase homogeneous material with excellent repeatability, high thermoelectric performance (maximum ZT ∼ 1.2 at 373 K) and robust mechanical properties in a very short time of less than 20 min. The technologically relevant average ZT value of TIFS-PAS fabricated Bi0.5Sb1.5Te3 from 298 K to 523 K is 0.86, about a 46% improvement over the ZM sample. The compressive and bending strength of TIFS-PAS Bi0.5Sb1.5Te3 are also improved by about 5 fold compared with those of the ZM samples. Thermoelectric power generation modules assembled using the TIFS-based high performance n and p type materials show the largest thermoelectric conversion efficiency of 5.2% when subjected to a temperature gradient of 250 K, representing about 42% enhancement compared with the commercial ZM-based module. Because of the simplicity and scalability of the process and short synthesis time, the TIFS-PAS technology provides a new and efficient way for large-scale, economical fabrication of Bi2Te3-based thermoelectrics.
Co-reporter:Gang Zheng;Xianli Su;Hongyao Xie;Yuejiao Shu;Tao Liang;Xiaoyu She;Wei Liu;Yonggao Yan;Qingjie Zhang;Ctirad Uher;Xinfeng Tang
Energy & Environmental Science (2008-Present) 2017 vol. 10(Issue 12) pp:2638-2652
Publication Date(Web):2017/12/06
DOI:10.1039/C7EE02677C
The traditional zone melting (ZM) method for the fabrication of state of the art Bi2Te3-based thermoelectric materials has long been considered a time and energy intensive process. Herein, a combustion synthesis known as the thermally induced flash synthesis (TIFS) is employed to synthesize high performance p-type BiSbTe alloys within 20 min compared to tens of hours for the ZM samples. The thermodynamic parameters and phase transformation mechanism during the TIFS process were systematically studied for the first time. TIFS combined with plasma activated sintering (PAS) results in a single phase homogeneous material with excellent repeatability, high thermoelectric performance (maximum ZT ∼ 1.2 at 373 K) and robust mechanical properties in a very short time of less than 20 min. The technologically relevant average ZT value of TIFS-PAS fabricated Bi0.5Sb1.5Te3 from 298 K to 523 K is 0.86, about a 46% improvement over the ZM sample. The compressive and bending strength of TIFS-PAS Bi0.5Sb1.5Te3 are also improved by about 5 fold compared with those of the ZM samples. Thermoelectric power generation modules assembled using the TIFS-based high performance n and p type materials show the largest thermoelectric conversion efficiency of 5.2% when subjected to a temperature gradient of 250 K, representing about 42% enhancement compared with the commercial ZM-based module. Because of the simplicity and scalability of the process and short synthesis time, the TIFS-PAS technology provides a new and efficient way for large-scale, economical fabrication of Bi2Te3-based thermoelectrics.
Co-reporter:Dongwang Yang;Xianli Su;Fanchen Meng;Si Wang;Yonggao Yan;Jihui Yang;Jian He;Qingjie Zhang;Ctirad Uher;Xinfeng Tang
Journal of Materials Chemistry A 2017 vol. 5(Issue 44) pp:23243-23251
Publication Date(Web):2017/11/14
DOI:10.1039/C7TA08726H
Simultaneous control of the stoichiometry, microstructure, and compositional homogeneity is a prerequisite for understanding the properties of Ag2Se. These are difficult to attain because of the highly mobile Ag+ ions above the superionic phase transition at 407 K. Here we report on a novel synthesis of well crystallized orthorhombic Ag2Se carried out at room temperature, which requires no expensive instrumentation, and yields a single-phase material in a very short time. Our facile reaction process is a self-sustaining room temperature synthesis driven by the dissociative adsorption of Se by Ag and promoted by stirring and intermittent grinding under ambient conditions. Systematic experimental and theoretical studies of chemical reactions between Ag and Q (Te, Se, and S) revealed that the reaction mechanism between Ag and Q is in line with the Hard Soft Acid Base (HSAB) scheme (rate order Ag2Te > Ag2Se > Ag2S). The low carrier concentration achieved ∼1018 cm−3 and the optimized weighted majority-to-minority carrier mobility ratio observed in the samples as corroborated by the state-of-the-art thermoelectric performance of ZT ∼1.2 at 390 K attest to the superiority of the synthesis route in yielding highly stoichiometric Ag2Se samples.
Co-reporter:Dongwang Yang;Xianli Su;Fanchen Meng;Si Wang;Yonggao Yan;Jihui Yang;Jian He;Qingjie Zhang;Ctirad Uher;Xinfeng Tang
Journal of Materials Chemistry A 2017 vol. 5(Issue 44) pp:23243-23251
Publication Date(Web):2017/11/14
DOI:10.1039/C7TA08726H
Simultaneous control of the stoichiometry, microstructure, and compositional homogeneity is a prerequisite for understanding the properties of Ag2Se. These are difficult to attain because of the highly mobile Ag+ ions above the superionic phase transition at 407 K. Here we report on a novel synthesis of well crystallized orthorhombic Ag2Se carried out at room temperature, which requires no expensive instrumentation, and yields a single-phase material in a very short time. Our facile reaction process is a self-sustaining room temperature synthesis driven by the dissociative adsorption of Se by Ag and promoted by stirring and intermittent grinding under ambient conditions. Systematic experimental and theoretical studies of chemical reactions between Ag and Q (Te, Se, and S) revealed that the reaction mechanism between Ag and Q is in line with the Hard Soft Acid Base (HSAB) scheme (rate order Ag2Te > Ag2Se > Ag2S). The low carrier concentration achieved ∼1018 cm−3 and the optimized weighted majority-to-minority carrier mobility ratio observed in the samples as corroborated by the state-of-the-art thermoelectric performance of ZT ∼1.2 at 390 K attest to the superiority of the synthesis route in yielding highly stoichiometric Ag2Se samples.
Co-reporter:Pei-Yang Gu;Ning Wang;Chengyuan Wang;Yecheng Zhou;Guankui Long;Miaomiao Tian;Wangqiao Chen;Xiao Wei Sun;Qichun Zhang
Journal of Materials Chemistry A 2017 vol. 5(Issue 16) pp:7339-7344
Publication Date(Web):2017/04/18
DOI:10.1039/C7TA01764B
Compared to the traditional-architecture perovskite photovoltaic solar cells (n-i-p type), which use metal oxide as electron transport layers (ETLs) and organic semiconducting materials as hole transport layers, the fabrication of metal-oxide-free, solution-processed inverted perovskite solar cells (PSCs) is more desired because of low-temperatures and all-solution-based applications in future commercial PSC modules. In a typical configuration of inverted PSCs, the widely used ETL compound is the fullerene-based phenyl-C61-butyric acid methyl ester (PCBM), which currently is the best organic ETL material. The cost of this compound is very high, and the morphology and electrical properties are very sensitive to experimental conditions. We here propose a new organic ETL material for the replacement of PCBM in inverted PSCs. We demonstrate metal-oxide-free solution-processed inverted PSCs using the n-type sulfur-containing azaacene 10,14-bis(5-(2-ethylhexyl)thiophen-2-yl)-dipyrido[3,2-a:2′,3′-c][1,2,5]thiadiazolo[3,4-i]phenazine (TDTP) as the ETL with a power conversion efficiency of ∼18.2%, which is higher than that of the corresponding non-sulfur-containing azaacene 10,17-bis((triisopropylsilyl)ethynyl)dipyrido[3,2-a:2′,3′-c]quinoxalino[2,3-i]phenazine (PYPH)-based PSCs (up to 9.5%) or PCBM-based PSCs (up to 17.0%). This superior performance is attributed to the stronger interaction between TDTP and the perovskite surface than that between PYPH and the perovskite surface, which is supported by theoretical calculations. Our results show that easily-accessible simple n-type sulfur-containing small molecules are promising ETL candidates to further propel inverted PSCs to practical applications.
Co-reporter:Constantinos C. Stoumpos, Chan Myae Myae Soe, Hsinhan Tsai, Wanyi Nie, ... Mercouri G. Kanatzidis
Chem 2017 Volume 2, Issue 3(Volume 2, Issue 3) pp:
Publication Date(Web):9 March 2017
DOI:10.1016/j.chempr.2017.02.004
•A 2D halide perovskite has been synthesized and structurally characterized•Direct-band-gap semiconductor with a multiple-quantum-well electronic structure•Narrows the gap between confined quantum wells and infinite extended lattices•Efficient solar cells have been fabricated by the hot-casting methodRuddlesden-Popper (RP) perovskites are cutting-edge materials in the field of hybrid halide perovskite semiconductors as second-generation systems for optoelectronic devices. We report on the synthesis and characterization of (CH3(CH2)3NH3)2(CH3NH3)4Pb5I16, which represents the fifth (n = 5) member of a homologous RP perovskite series. The orthorhombic material has a direct band gap Eg of 1.83 eV and exhibits room-temperature photoluminescence at 678 nm. Density functional theory calculations indicate that the compound has broad electronic bands with light effective masses for electron and hole carriers, comparable with those of the CH3NH3PbI3 (n = ∞) perovskite, resulting in high charge-carrier mobility required for planar opto-electronic device applications. We thus demonstrate highly stable planar solar cells fabricated with this material as a light absorber with a promising efficiency of 8.71%.Here, we present the fifth member (n = 5) of the Ruddlesden-Popper (CH3(CH2)3NH3)2(CH3NH3)n−1PbnI3n+1 family, which we successfully synthesized in high yield and purity. Phase purity could be clearly determined from its X-ray powder diffraction patterns, which feature the (0k0) Bragg reflections at low 2θ angles. The obtained pure n = 5 compound was confirmed to be a direct band-gap semiconductor with Eg = 1.83 eV. The direct nature of the band gap is supported by density functional theory calculations. Intense photoluminescence was observed at room temperature at 678 nm arising from the band edge of the material. High-quality thin films can be prepared by the hot-casting method from solutions with a pure-phase compound as a precursor. The planar solar cells fabricated with n = 5 thin films demonstrate excellent power-conversion efficiency of 8.71% with an impressive open-circuit voltage of ∼1 V. Our results point to the use of layered perovskites with higher n numbers and pure chemical composition.Download high-res image (353KB)Download full-size image
Co-reporter:Gangjian Tan;Constantinos C. Stoumpos;Si Wang;Trevor P. Bailey;Li-Dong Zhao;Ctirad Uher
Advanced Energy Materials 2017 Volume 7(Issue 18) pp:
Publication Date(Web):2017/09/01
DOI:10.1002/aenm.201700099
A high ZT (thermoelectric figure of merit) of ≈1.4 at 900 K for n-type PbTe is reported, through modifying its electrical and thermal properties by incorporating Sb and S, respectively. Sb is confirmed to be an amphoteric dopant in PbTe, filling Te vacancies at low doping levels (<1%), exceeding which it enters into Pb sites. It is found that Sb-doped PbTe exhibits much higher carrier mobility than similar Bi-doped materials, and accordingly, delivers higher power factors and superior ZT. The enhanced electronic transport is attributed to the elimination of Te vacancies, which appear to strongly scatter n-type charge carriers. Building on this result, the ZT of Pb0.9875Sb0.0125Te is further enhanced by alloying S into the Te sublattice. The introduction of S opens the bandgap of PbTe, which suppresses bipolar conduction while simultaneously increasing the electron concentration and electrical conductivity. Furthermore, it introduces point defects and induces second phase nanostructuring, which lowers the lattice thermal conductivity to ≈0.5 W m−1 K−1 at 900 K, making this material a robust candidate for high-temperature (500–900 K) thermoelectric applications. It is anticipated that the insights provided here will be an important addition to the growing arsenal of strategies for optimizing the performance of thermoelectric materials.
Co-reporter:Hsueh-Chung Liao;Peijun Guo;Che-Pu Hsu;Ma Lin;Binghao Wang;Li Zeng;Wei Huang;Chan Myae Myae Soe;Wei-Fang Su;Michael J. Bedzyk;Michael R. Wasielewski;Antonio Facchetti;Robert P. H. Chang;Tobin J. Marks
Advanced Energy Materials 2017 Volume 7(Issue 8) pp:
Publication Date(Web):2017/04/01
DOI:10.1002/aenm.201601660
Organic–inorganic perovskite photovoltaics are an emerging solar technology. Developing materials and processing techniques that can be implemented in large-scale manufacturing is extremely important for realizing the potential of commercialization. Here we report a hot-casting process with controlled Cl− incorporation which enables high stability and high power-conversion-efficiencies (PCEs) of 18.2% for small area (0.09 cm2) and 15.4% for large-area (≈1 cm2) single solar cells. The enhanced performance versus tri-iodide perovskites can be ascribed to longer carrier diffusion lengths, improved uniformity of the perovskite film morphology, favorable perovskite crystallite orientation, a halide concentration gradient in the perovskite film, and reduced recombination by introducing Cl−. Additionally, Cl− improves the device stability by passivating the reaction between I− and the silver electrode. High-quality thin films deployed over a large-area 5 cm × 5 cm eight-cell module have been fabricated and exhibit an active-area PCE of 12.0%. The feasibility of material and processing strategies in industrial large-scale coating techniques is then shown by demonstrating a “dip-coating” process which shows promise for large throughput production of perovskite solar modules.
Co-reporter:Gangjian Tan, Li-Dong Zhao, and Mercouri G. Kanatzidis
Chemical Reviews 2016 Volume 116(Issue 19) pp:12123-12149
Publication Date(Web):August 31, 2016
DOI:10.1021/acs.chemrev.6b00255
There has been a renaissance of interest in exploring highly efficient thermoelectric materials as a possible route to address the worldwide energy generation, utilization, and management. This review describes the recent advances in designing high-performance bulk thermoelectric materials. We begin with the fundamental stratagem of achieving the greatest thermoelectric figure of merit ZT of a given material by carrier concentration engineering, including Fermi level regulation and optimum carrier density stabilization. We proceed to discuss ways of maximizing ZT at a constant doping level, such as increase of band degeneracy (crystal structure symmetry, band convergence), enhancement of band effective mass (resonant levels, band flattening), improvement of carrier mobility (modulation doping, texturing), and decrease of lattice thermal conductivity (synergistic alloying, second-phase nanostructuring, mesostructuring, and all-length-scale hierarchical architectures). We then highlight the decoupling of the electron and phonon transport through coherent interface, matrix/precipitate electronic bands alignment, and compositionally alloyed nanostructures. Finally, recent discoveries of new compounds with intrinsically low thermal conductivity are summarized, where SnSe, BiCuSeO, MgAgSb, complex copper and bismuth chalcogenides, pnicogen-group chalcogenides with lone-pair electrons, and tetrahedrites are given particular emphasis. Future possible strategies for further enhancing ZT are considered at the end of this review.
Co-reporter:Constantinos C. Stoumpos
Advanced Materials 2016 Volume 28( Issue 28) pp:5778-5793
Publication Date(Web):
DOI:10.1002/adma.201600265

Halide perovskites are a rapidly developing class of medium-bandgap semiconductors which, to date, have been popularized on account of their remarkable success in solid-state heterojunction solar cells raising the photovoltaic efficiency to 20% within the last 5 years. As the physical properties of the materials are being explored, it is becoming apparent that the photovoltaic performance of the halide perovskites is just but one aspect of the wealth of opportunities that these compounds offer as high-performance semiconductors. From unique optical and electrical properties stemming from their characteristic electronic structure to highly efficient real-life technological applications, halide perovskites constitute a brand new class of materials with exotic properties awaiting discovery. The nature of halide perovskites from the materials' viewpoint is discussed here, enlisting the most important classes of the compounds and describing their most exciting properties. The topics covered focus on the optical and electrical properties highlighting some of the milestone achievements reported to date but also addressing controversies in the vastly expanding halide perovskite literature.

Co-reporter:Xian-Ming Zhang; Debajit Sarma; Ya-Qin Wu; Li Wang; Zhi-Xue Ning; Fu-Qiang Zhang
Journal of the American Chemical Society 2016 Volume 138(Issue 17) pp:5543-5546
Publication Date(Web):April 15, 2016
DOI:10.1021/jacs.6b02959
The new ion-exchange oxy-sulfide material has a three-dimensional open framework comprising the pseudo-T4 supertetrahedral [In4Sn16O10S34]12– cluster. This material has large pores and is a fast ion exchanger. It exhibits high selectivity in sequestering heavy metal ions from aqueous solutions including solutions containing heavy concentrations of sodium, calcium, ammonium, magnesium, zinc, carbonate, phosphate, and acetate ions. Moreover, the ion-exchange efficiency in competitive ion-exchange experiments involving mixtures of metal ions is significantly higher than for solutions of single metal ions.
Co-reporter:Li-Dong Zhao; Xiao Zhang; Haijun Wu; Gangjian Tan; Yanling Pei; Yu Xiao; Cheng Chang; Di Wu; Hang Chi; Lei Zheng; Shengkai Gong; Ctirad Uher; Jiaqing He
Journal of the American Chemical Society 2016 Volume 138(Issue 7) pp:2366-2373
Publication Date(Web):February 12, 2016
DOI:10.1021/jacs.5b13276
We report enhanced thermoelectric performance in SnTe, where significantly improved electrical transport properties and reduced thermal conductivity were achieved simultaneously. The former was obtained from a larger hole Seebeck coefficient through Fermi level tuning by optimizing the carrier concentration with Ga, In, Bi, and Sb dopants, resulting in a power factor of 21 μW cm–1 K–2 and ZT of 0.9 at 823 K in Sn0.97Bi0.03Te. To reduce the lattice thermal conductivity without deteriorating the hole carrier mobility in Sn0.97Bi0.03Te, SrTe was chosen as the second phase to create strained endotaxial nanostructures as phonon scattering centers. As a result, the lattice thermal conductivity decreases strongly from ∼2.0 Wm–1 K–1 for Sn0.97Bi0.03Te to ∼1.2 Wm–1 K–1 as the SrTe content is increased from 0 to 5.0% at room temperature and from ∼1.1 to ∼0.70 Wm–1 K–1 at 823 K. For the Sn0.97Bi0.03Te-3% SrTe sample, this leads to a ZT of 1.2 at 823 K and a high average ZT (for SnTe) of 0.7 in the temperature range of 300–823 K, suggesting that SnTe is a robust candidate for medium-temperature thermoelectric applications.
Co-reporter:Lijiao Ma; Qing Wang; Saiful M. Islam; Yingchun Liu; Shulan Ma
Journal of the American Chemical Society 2016 Volume 138(Issue 8) pp:2858-2866
Publication Date(Web):January 31, 2016
DOI:10.1021/jacs.6b00110
The MoS42– ion was intercalated into magnesium–aluminum layered double hydroxide (MgAl—NO3-LDH) to produce a single phase material of Mg0.66Al0.34(OH)2(MoS4)0.17·nH2O (MgAl—MoS4-LDH), which demonstrates highly selective binding and extremely efficient removal of heavy metal ions such as Cu2+, Pb2+, Ag+, and Hg2+. The MoS4-LDH displays a selectivity order of Co2+, Ni2+, Zn2+ < Cd2+ ≪ Pb2+ < Cu2+ < Hg2+ < Ag+ for the metal ions. The enormous capacities for Hg2+ (∼500 mg/g) and Ag+ (450 mg/g) and very high distribution coefficients (Kd) of ∼107 mL/g place the MoS4-LDH at the top of materials known for such removal. Sorption isotherm for Ag+ agrees with the Langmuir model suggesting a monolayer adsorption. It can rapidly lower the concentrations of Cu2+, Pb2+, Hg2+, and Ag+ from ppm levels to trace levels of ≤1 ppb. For the highly toxic Hg2+ (at ∼30 ppm concentration), the adsorption is exceptionally rapid and highly selective, showing a 97.3% removal within 5 min, 99.7% removal within 30 min, and ∼100% removal within 1 h. The sorption kinetics for Cu2+, Ag+, Pb2+, and Hg2+ follows a pseudo-second-order model suggesting a chemisorption with the adsorption mechanism via M—S bonding. X-ray diffraction patterns of the samples after adsorption demonstrate the coordination and intercalation structures depending on the metal ions and their concentration. After the capture of heavy metals, the crystallites of the MoS4-LDH material retain the original hexagonal prismatic shape and are stable at pH ≈ 2–10. The MoS4-LDH material is thus promising for the remediation of heavy metal polluted water.
Co-reporter:Mei-Ling Feng, Debajit Sarma, Xing-Hui Qi, Ke-Zhao Du, Xiao-Ying Huang, and Mercouri G. Kanatzidis
Journal of the American Chemical Society 2016 Volume 138(Issue 38) pp:12578-12585
Publication Date(Web):September 1, 2016
DOI:10.1021/jacs.6b07351
Co-reporter:Lin Ma, Feng Hao, Constantinos C. Stoumpos, Brian T. Phelan, Michael R. Wasielewski, and Mercouri G. Kanatzidis
Journal of the American Chemical Society 2016 Volume 138(Issue 44) pp:14750-14755
Publication Date(Web):October 17, 2016
DOI:10.1021/jacs.6b09257
The dynamics of photoexcited lead-free perovskite films, CH3NH3SnI3, were studied using broadband transient absorption and time-resolved fluorescence spectroscopy. Similar to its lead analogue CH3NH3PbI3, we show that free carrier (electrons and holes) recombination is also the dominant relaxation pathway in CH3NH3SnI3 films. The slow hot carrier relaxation time is 0.5 ps. Long carrier diffusion lengths for electrons (279 ± 88 nm) and holes (193 ± 46 nm) were obtained from fluorescence quenching measurements. We also show that SnF2 doping in the CH3NH3SnI3 film effectively increases the fluorescence lifetime up to 10 times and gives diffusion lengths exceeding 500 nm. These results suggest that the photophysics of CH3NH3SnI3 perovskite are as favorable as those of CH3NH3PbI3, demonstrating that it is a promising nontoxic lead-free replacement for lead iodide perovskite-based solar cells.
Co-reporter:Christos D. Malliakas, Duck Young Chung, Helmut Claus, and Mercouri G. Kanatzidis
Journal of the American Chemical Society 2016 Volume 138(Issue 44) pp:14694-14698
Publication Date(Web):October 16, 2016
DOI:10.1021/jacs.6b08732
Superconductivity was discovered in the layered compound RbBi11/3Te6, featuring Bi vacancies and a narrow band gap of 0.25(2) eV at room temperature. A sharp superconducting transition at ∼3.2 K was observed in polycrystalline ingots. The superconducting volume fraction of oriented single crystals is almost 100%, confirming bulk superconductivity. Systematic Se and Sb substitutions in RbBi11/3–ySbySexTe6–x revealed a dependence of the superconducting transition on composition that can increase the Tc up to ∼10%. The RbBi11/3Te6 system is the first member of the new homologous series Rb[Bi2n+11/3Te3n+6] with infinite Bi2Te3-like layers. The large degree of chemical tunability of the electronic structure of the homology via doping and/or substitution gives rise to a new family of superconductors.
Co-reporter:Weijun Ke, Constantinos C. Stoumpos, Jenna Leigh Logsdon, Michael R. Wasielewski, Yanfa Yan, Guojia Fang, and Mercouri G. Kanatzidis
Journal of the American Chemical Society 2016 Volume 138(Issue 45) pp:14998-15003
Publication Date(Web):October 25, 2016
DOI:10.1021/jacs.6b08790
Achieving high open-circuit voltage (Voc) for tin-based perovskite solar cells is challenging. Here, we demonstrate that a ZnS interfacial layer can improve the Voc and photovoltaic performance of formamidinium tin iodide (FASnI3) perovskite solar cells. The TiO2–ZnS electron transporting layer (ETL) with cascade conduction band structure can effectively reduce the interfacial charge recombination and facilitate electron transfer. Our best-performing FASnI3 perovskite solar cell using the cascaded TiO2–ZnS ETL has achieved a power conversion efficiency of 5.27%, with a higher Voc of 0.380 V, a short-circuit current density of 23.09 mA cm–2, and a fill factor of 60.01%. The cascade structure is further validated with a TiO2–CdS ETL. Our results suggest a new approach for further improving the performance of tin-based perovskite solar cells with a higher Voc.
Co-reporter:Yanling Pei, Cheng Chang, Zhe Wang, Meijie Yin, Minghui Wu, Gangjian TanHaijun Wu, Yuexing Chen, Lei Zheng, Shengkai Gong, Tiejun Zhu, Xinbing Zhao, Li Huang, Jiaqing He, Mercouri G. Kanatzidis, Li-Dong Zhao
Journal of the American Chemical Society 2016 Volume 138(Issue 50) pp:16364-16371
Publication Date(Web):November 28, 2016
DOI:10.1021/jacs.6b09568
We report that K2Bi8Se13 exhibits multiple conduction bands that lie close in energy and can be activated through doping, leading to a highly enhanced Seebeck coefficient and a high power factor with elevated temperature. Meanwhile, the large unit cell, complex low symmetry crystal structure, and nondirectional bonding lead to the very low lattice thermal conductivity of K2Bi8Se13, ranging between 0.42 and 0.20 W m–1 K–1 in the temperature interval 300–873 K. Experimentally, we further support the low thermal conductivity of K2Bi8Se13 using phonon velocity measurements; the results show a low average phonon velocity (1605 ms–1), small Young’s modulus (37.1 GPa), large Grüneisen parameter (1.71), and low Debye temperature (154 K). A detailed investigation of the microstructure and defects was carried out using electron diffraction and transmission microscopy which reveal the presence of a K2.5Bi8.5Se14 minor phase intergrown along the side of the K2Bi8Se13 phase. The combination of enhanced power factor and low thermal conductivity results in a high ZT value of ∼1.3 at 873 K in electron doped K2Bi8Se13 material.
Co-reporter:Tze-Bin Song, Takamichi YokoyamaConstantinos C. Stoumpos, Jenna LogsdonDuyen H. Cao, Michael R. Wasielewski, Shinji Aramaki, Mercouri G. Kanatzidis
Journal of the American Chemical Society 2016 Volume 139(Issue 2) pp:836-842
Publication Date(Web):December 15, 2016
DOI:10.1021/jacs.6b10734
Tin-based halide perovskite materials have been successfully employed in lead-free perovskite solar cells, but the tendency of these materials to form leakage pathways from p-type defect states, mainly Sn4+ and Sn vacancies, causes poor device reproducibility and limits the overall power conversion efficiencies (PCEs). Here, we present an effective process that involves a reducing vapor atmosphere during the preparation of Sn-based halide perovskite solar cells to solve this problem, using MASnI3, CsSnI3, and CsSnBr3 as the representative absorbers. This process enables the fabrication of remarkably improved solar cells with PCEs of 3.89%, 1.83%, and 3.04% for MASnI3, CsSnI3, and CsSnBr3, respectively. The reducing vapor atmosphere process results in more than 20% reduction of Sn4+/Sn2+ ratios, which leads to greatly suppressed carrier recombination, to a level comparable to their lead-based counterparts. These results mark an important step toward a deeper understanding of the intrinsic Sn-based halide perovskite materials, paving the way to the realization of low-cost and lead-free Sn-based halide perovskite solar cells.
Co-reporter:Kota Surya Subrahmanyam, Christos D. Malliakas, Saiful M. Islam, Debajit Sarma, Jinsong Wu, and Mercouri G. Kanatzidis
Chemistry of Materials 2016 Volume 28(Issue 21) pp:7744
Publication Date(Web):September 23, 2016
DOI:10.1021/acs.chemmater.6b02913
Chalcogels are a new class of aerogel materials with diverse properties relevant to catalysis, ion-exchange, and gas adsorption. We report the synthesis of high-surface-area antimony sulfide chalcogels through the sol–gel process followed by supercritical drying. Four different synthetic routes were employed: (1) hydrolysis of sodium thioantimonite (Na3SbS3); (2) ligand metathesis between Sb3+ metal linker and SbS33– anion; (3) reaction of Sb2S3 with Na2S·9H2O; and (4) reaction of Sb2S3 with KOH. All these reactions enable the formation of antimony sulfide gels. The aerogels derived after supercritical drying exhibit high porosity with Brunauer−Emmett−Teller (BET) surface areas up to 300 m2 g–1. The oxidation state of antimony in these chalcogels has been assigned by X-ray photoelectron spectroscopy (XPS) to be +3. Pair distribution function analysis suggests that the local environment around the Sb atoms is very similar to that of crystalline Sb2S3. All the antimony sulfide chalcogels possess the band gap of ∼1.75 eV, and they are thermally stable even up to 600 °C.
Co-reporter:Saiful M. Islam, Christos D. Malliakas, Debajit Sarma, David C. Maloney, Constantinos C. Stoumpos, Oleg Y. Kontsevoi, Arthur J. Freeman, and Mercouri G. Kanatzidis
Chemistry of Materials 2016 Volume 28(Issue 20) pp:7332
Publication Date(Web):September 15, 2016
DOI:10.1021/acs.chemmater.6b02691
New quaternary thioiodides Pb2BiS2I3, Sn2BiS2I3, and Sn2BiSI5 have been synthesized by isothermal heating as well as chemical vapor transport. Pb2BiS2I3 and Sn2BiS2I3 crystallize in the space group, Cmcm, with unit cell parameters a = 4.3214 (9), b = 14.258 (3), and c = 16.488 (3) Å; a = 4.2890 (6), b = 14.121(2), and c = 16.414 (3) Å, respectively. Sn2BiSI5 adopts a unique crystal structure that crystallizes in C2/m with cell parameters a = 14.175 (3), b = 4.3985 (9), c = 21.625 (4) Å, and β = 98.90(3)°. The crystal structures of Pb2BiS2I3 and Sn2BiS2I3 are strongly anisotropic and can be described as three-dimensional networks that are composed of parallel infinite ribbons of [M4S2I4] (M = Pb, Sn, Bi) running along the crystallographic c-axis. The crystal structure of Sn2BiSI5 is a homologue of the M2BiS2I3 (M = Pb, Sn) which has two successive ribbons of [M4S2I4] separated by two interstitial (Sn1–xBixI6) octahedral units. These compounds were characterized by scanning electron microscopy, differential thermal analysis, and X-ray photoelectron spectroscopy. Pb2SbS2I3, Pb2BiS2I3, “Pb2Sb1–xBixS2I3” (x ∼ 0.4), Sn2BiS2I3 and Sn2BiSI5 are highly resistive and exhibit electrical resistivities of 3.0 GΩ cm, 100 MΩ cm, 65 MΩ cm, 1.2 MΩ cm, and 34 MΩ cm, respectively, at room temperature. Pb2BiS2I3, Sn2BiS2I3, Pb2SbS2I3, “Pb2Sb1–xBixS2I3” (x ∼ 0.4), and Sn2BiSI5 are semiconductors with bandgaps of 1.60, 1.22, 1.92, 1.66, and 1.32 eV, respectively. The electronic band structures of Pb2BiS2I3, Sn2BiS2I3, and Sn2BiSI5, calculated using density functional theory, show that all compounds are direct bandgap semiconductors.
Co-reporter:Alyssa S. Haynes, Abhishek Banerjee, Felix O. Saouma, Calford O. Otieno, Joon I. Jang, and Mercouri G. Kanatzidis
Chemistry of Materials 2016 Volume 28(Issue 7) pp:2374
Publication Date(Web):March 17, 2016
DOI:10.1021/acs.chemmater.6b00551
The soluble molecular selenophosphate salts ACsP2Se8 (A = K, Rb, Cs) crystallize in the orthorhombic space group Ccce with a = 14.982(3) Å, b = 24.579(5) Å, and c = 13.065(3) Å for the Cs salt and a = 14.782(3) Å, b = 23.954(5) Å, and c = 13.044(3) Å for the K analogue. ACsP2Se8 is composed of the molecular 6-membered ring, [P2Se8]2−, in the twist conformation charge balanced by alkali metals. The band gaps of these compounds are 2.44 ± 0.2 eV for Cs2P2Se8, 2.41 ± 0.2 eV for RbCsP2Se8, and 2.36 ± 0.2 eV for KCsP2Se8. The amorphous versions of these materials can be made by water quenching the melt and have band gaps for all ACsP2Se8 of 2.12 ± 0.2 eV. Raman spectroscopic studies exhibit active modes of PSe4 and Se−Se in the compound. Solution 31P NMR studies shed light into the interesting conformational fluxionality of the [P2Se8]2− anion, including a conformation that has not been previously observed. Thermal analysis reveals ACsP2Se8 exhibits a phase transition, which we investigate by in situ synchrotron powder X-ray diffraction. Third harmonic generation (THG) nonlinear optical measurements determined the THG coefficient, χ(3), for amorphous and crystalline Cs2P2Se8 of 1.8 ± 0.2 × 105 pm2/V2 and 2.4 ± 0.1 × 105 pm2/V2, respectively.
Co-reporter:Debajit Sarma, Christos D. Malliakas, K. S. Subrahmanyam, Saiful M. Islam and Mercouri G. Kanatzidis  
Chemical Science 2016 vol. 7(Issue 2) pp:1121-1132
Publication Date(Web):27 Oct 2015
DOI:10.1039/C5SC03040D
The fission of uranium produces radionuclides, 137Cs and 90Sr, which are major constituents of spent nuclear fuel. The half-life of 137Cs and 90Sr is nearly 30 years and thus that makes them harmful to human life and the environment. The selective removal of these radionuclides in the presence of high salt concentrations from industrial nuclear waste is necessary for safe storage. Here we report the synthesis and crystal structure of K2xSn4−xS8−x (x = 0.65–1, KTS-3) a material which exhibits excellent Cs+, Sr2+ and UO22+ ion exchange properties in varying conditions. The compound adopts a layered structure which consists of exchangeable potassium ions sandwiched between infinite layers of octahedral and tetrahedral tin centers. K2xSn4−xS8−x (x = 0.65–1, KTS-3) crystallizes in the monoclinic space group P21/c with cell parameters a = 13.092(3) Å, b = 16.882(2) Å, c = 7.375(1) Å and β = 98.10(1)°. Refinement of the single crystal diffraction data revealed the presence of Sn vacancies in the tetrahedra that are long range ordered. The interlayer potassium ions of KTS-3 can be exchanged for Cs+, Sr2+ and UO22+. KTS-3 exhibits rapid and efficient ion exchange behavior in a broad pH range. The distribution coefficients (Kd) for KTS-3 are high for Cs+ (5.5 × 104), Sr2+ (3.9 × 105) and UO22+ (2.7 × 104) at neutral pH (7.4, 6.9, 5.7 ppm Cs+, Sr2+ and UO22+, respectively; V/m ∼ 1000 mL g−1). KTS-3 exhibits impressive Cs+, Sr2+ and UO22+ ion exchange properties in high salt concentration and over a broad pH range, which coupled with the low cost, environmentally friendly nature and facile synthesis underscores its potential in treating nuclear waste.
Co-reporter:Manolis J. Manos and Mercouri G. Kanatzidis  
Chemical Science 2016 vol. 7(Issue 8) pp:4804-4824
Publication Date(Web):26 Apr 2016
DOI:10.1039/C6SC01039C
Metal sulfide ion-exchangers (MSIEs) represent a new addition to the field of ion exchange materials. This is a growing class of materials that display exceptional selectivity and rapid sorption kinetics for soft or relatively soft metal ions as a result of their soft basic frameworks. Without requiring functionalization, they outperform the most efficient sulfur-functionalized materials. This is the first review focusing on this class of materials; it covers the most important MSIEs, focusing on their synthesis, structural features and ion-exchange chemistry. Furthermore, recent developments in the engineered and composite forms of MSIEs are described. Future research opportunities are also discussed in the hope of inspiring additional scientists to engage in this new area of research on sulfidic ion-exchange materials.
Co-reporter:Daniel E. Bugaris, Christos D. Malliakas, Duck Young Chung, and Mercouri G. Kanatzidis
Inorganic Chemistry 2016 Volume 55(Issue 4) pp:1664-1673
Publication Date(Web):January 26, 2016
DOI:10.1021/acs.inorgchem.5b02599
La2Re3B7 and La3Re2B5 have been synthesized in single-crystalline form from a molten La/Ni eutectic at 1000 °C in the first example of the flux crystal growth of ternary rare-earth rhenium borides. Both compounds crystallize in their own orthorhombic structure types, with La2Re3B7 (space group Pcca) having lattice parameters a = 7.657(2) Å, b = 6.755(1) Å, and c = 11.617(2) Å, and La3Re2B5 (space group Pmma) having lattice parameters a = 10.809(2) Å, b = 5.287(1) Å, and c = 5.747(1) Å. The compounds possess three-dimensional framework structures that are built up from rhenium boride polyhedra and boron–boron bonding. La3Re2B5 features fairly common B2 dumbbells, whereas La2Re3B7 has unique one-dimensional subunits composed of alternating triangular B3 and trans-B4 zigzag chain fragments. Also observed in La3Re2B5 is an unusual coordination of B by an octahedron of La atoms. Electronic band structure calculations predict that La2Re3B7 is a semimetal, which is observed in the electrical resistivity data as measured on single crystals, with behavior obeying the Bloch–Grüneisen model and a room-temperature resistivity ρ300 K of ∼375 μΩ cm. The electronic band structure calculations also suggest that La3Re2B5 is a regular metal.
Co-reporter:Jonathan C. Syrigos and Mercouri G. Kanatzidis
Inorganic Chemistry 2016 Volume 55(Issue 9) pp:4664-4668
Publication Date(Web):April 14, 2016
DOI:10.1021/acs.inorgchem.6b00535
The new compound K4Sc2P4Se14 was synthesized via the polychalcogenide flux method. It crystallizes in the space group C2/c, and the structure is composed of 1/∞[Sc2P4Se144–] chains that are separated by K+ cations. The structural motif features two [PSe4]3– units and one [P2Se6]4– unit bridging the Sc centers and has not been reported for any other compound. The 1/∞[Sc2P4Se144–] chains pack in a crosshatched pattern perpendicular to the c axis of the crystal, forming channels for half of the K+ atoms while the other half occupy empty space between the chains. The orange-yellow crystals of K4Sc2P4Se14 are air-sensitive and gradually turn red over the course of a couple hours. The band gap of the phase is 2.25(2) eV, and Raman spectroscopy shows the symmetric stretches of the selenophosphate groups to be at 231 and 216 cm–1 for the [PSe4]3– and [P2Se6]4– units, respectively. Solid-state 31P MAS NMR of K4Sc2P4Se14 shows two prominent peaks at 11.31 and −23.07 ppm and one minor peak at −106.36 ppm, most likely due to degradation of the product or an unknown second phase.
Co-reporter:Fei Han, Huimei Liu, Christos D. Malliakas, Mihai Sturza, Duck Young Chung, Xiangang Wan, and Mercouri G. Kanatzidis
Inorganic Chemistry 2016 Volume 55(Issue 7) pp:3547-3552
Publication Date(Web):March 21, 2016
DOI:10.1021/acs.inorgchem.6b00025
The new bismuth chalcogenide La0.92Bi1.08S3 crystallizes in the monoclinic space group C2/m with a = 28.0447(19) Å, b = 4.0722(2) Å, c = 14.7350(9) Å, and β = 118.493(5)°. The structure of La0.92Bi1.08S3 is built of NaCl-type Bi2S5 blocks and BiS4 and LaS5 infinitely long chains, forming a compact three-dimensional framework with parallel tunnels. Optical spectroscopy and resistivity measurements reveal a semiconducting behavior with a band gap of ∼1 eV and activation energy for transport of 0.36(1) eV. Thermopower measurements suggest the majority carriers of La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phase transitions from 2 to 300 K. Band structure calculations at the density functional theory level confirm the semiconducting nature and the indirect gap of La0.92Bi1.08S3.
Co-reporter:Nicholas P. Calta, Sergey L. Bud’ko, Alexandra P. Rodriguez, Fei Han, Duck Young Chung, and Mercouri G. Kanatzidis
Inorganic Chemistry 2016 Volume 55(Issue 6) pp:3128-3135
Publication Date(Web):March 7, 2016
DOI:10.1021/acs.inorgchem.6b00059
We report the synthesis, crystal structure, and physical properties of two new polar intermetallic compounds, EuIr2In8 and SrIr2In8. Both were synthesized in good yield using In metal as a reactive flux medium, enabling the growth of large crystals for physical property measurements. They crystallize in the orthorhombic space group Pbam with the CeFe2Al8 structure type, which is sometimes also referred to as the CaCo2Al8 structure type. The two analogues have unit cell parameters of a = 13.847(3) Å, b = 16.118(3) Å, and c = 4.3885(9) Å for M = Eu and a = 13.847(3) Å, b = 16.113(3) Å, and c = 4.3962(9) Å for M = Sr at room temperature. SrIr2In8 is a diamagnetic metal with no local magnetic moments on either the Sr or Ir sites, and the diamagnetic contribution from core electrons overwhelms the expected Pauli paramagnetism normally seen in intermetallic compounds. Magnetism in EuIr2In8 is dominated by the local Eu moments, which order antiferromagnetically at 5 K in low applied fields. Increasing the field strength depresses the magnetic ordering temperature and also induces a spin reorientation at lower temperature, indicating complex competing magnetic interactions. Low-temperature heat capacity measurements show a significant enhancement of the Sommerfeld coefficient in EuIr2In8 relative to that in SrIr2In8, with estimated values of γ = 118(3) and 18.0(2) mJ mol–1 K–2, respectively.
Co-reporter:Nicholas P. Calta, Jino Im, Lei Fang, Thomas C. Chasapis, Daniel E. Bugaris, Duck Young Chung, Wai-Kwong Kwok, and Mercouri G. Kanatzidis
Inorganic Chemistry 2016 Volume 55(Issue 23) pp:12477-12481
Publication Date(Web):November 18, 2016
DOI:10.1021/acs.inorgchem.6b02617
Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.
Co-reporter:Mihai Sturza, Daniel E. Bugaris, Christos D. Malliakas, Fei Han, Duck Young Chung, and Mercouri G. Kanatzidis
Inorganic Chemistry 2016 Volume 55(Issue 10) pp:4884
Publication Date(Web):May 4, 2016
DOI:10.1021/acs.inorgchem.6b00400
The new ternary copper selenide NaCu4Se3 crystallizes in the RbCd4As3 structure type with the trigonal space group R3̅m and lattice constants a = 4.0316(4) Å and c = 31.438(8) Å. Its structure is built from two-dimensional slabs of 2/∞[Cu4Se3] separated by Na+ cations. The compound is formally mixed-valent with Se2–/Se– atoms and exhibits metallic properties. It is a hole conductor with an electrical conductivity of ∼300 S cm–1 at room temperature and a thermopower of ∼10 μV K–1. Hall effect measurements indicate holes as the dominant carrier with a concentration of ∼6.12(1) × 1021 cm–3 at 300 K. Density functional theory electronic structure calculations indicate p-type metallic behavior for the 2/∞[Cu4Se3] framework, which is in a good agreement with the experimental metallic conductivity and Pauli paramagnetism.
Co-reporter:Hao Li, Fang Meng, Christos D. Malliakas, Zhifu Liu, Duck Young Chung, Bruce Wessels, and Mercouri G. Kanatzidis
Crystal Growth & Design 2016 Volume 16(Issue 11) pp:6446
Publication Date(Web):September 28, 2016
DOI:10.1021/acs.cgd.6b01118
Hg3Se2Br2 is a wide band gap semiconductor (2.22 eV) with high density (7.598 g/cm3) and crystallizes in the monoclinic space group C2/m with cell parameters of a = 17.496 (4) Å, b = 9.3991 (19) Å, c = 9.776(2) Å, β = 90.46(3)°, V = 1607.6(6) Å3. It melts congruently at a low temperature, 566 °C, which allows for an easy single crystal growth directly from the stoichiometric melt. Single crystals of Hg3Se2Br2 up to 1 cm long have been grown using the Bridgman method. Hg3Se2Br2 single crystals exhibit a strong photocurrent response when exposed to Ag X-ray and blue diode laser. The resistivity of Hg3Se2Br2 measured by the two probe method is on the order of 1011 Ω·cm, and the mobility-lifetime product (μτ) of the electron and hole carriers estimated from the energy spectroscopy under Ag X-ray radiation are (μτ)e ≈ 1.4 × 10–4 cm2/V and (μτ)h ≈ 9.2 × 10–5 cm2/V. Electronic structure calculations at the density functional theory level indicate a direct band gap and a relatively small effective mass for carriers. On the basis of the photoconductivity and hard X-ray spectrum, Hg3Se2Br2 is a promising candidate for X-ray and γ-ray radiation detection at room temperature.
Co-reporter:Peng L. Wang, Svetlana S. Kostina, Fang Meng, Oleg Y. Kontsevoi, Zhifu Liu, Pice Chen, John A. Peters, Micah Hanson, Yihui He, Duck Young Chung, Arthur J. Freeman, Bruce W. Wessels, and Mercouri G. Kanatzidis
Crystal Growth & Design 2016 Volume 16(Issue 9) pp:5100
Publication Date(Web):July 26, 2016
DOI:10.1021/acs.cgd.6b00684
The refined synthesis and optimized crystal growth of high quality Pb2P2Se6 single crystals are reported. Improved experimental procedures were implemented to reduce the oxygen contamination and improve the stoichiometry of the single crystal samples. The impact of oxygen contamination and the nature of the stoichiometry deviation in the Pb2P2Se6 system were studied by first-principles density functional theory (DFT) electronic structure calculations as well as experimental methods. The DFT calculations indicated that the presence of interstitial oxygen atoms (Oint) leads to the formation of a deep level located near the middle of the gap, as well as a shallow acceptor level near the valence band maximum. In addition, total energy calculations of the heat of formation of Pb2P2Se6 suggest that the region of thermodynamic stability is sufficiently wide. By refining the preparative procedures, high quality Pb2P2Se6 single crystal samples were reproducibly obtained. These Pb2P2Se6 single crystals exhibited excellent optical transparency, electrical resistivity in the range of 1011 Ω·cm, and a significant increase in photoconductivity. Infrared photoluminescence of the Pb2P2Se6 single crystals was observed over the temperature range of 15–75 K. Detectors fabricated from boules yielded a clear spectroscopic response to both Ag Kα X-ray and 57Co γ-ray radiation. The electron and hole mobility-lifetime product (μτ) of the current Pb2P2Se6 detectors were estimated to be 3.1 × 10–4 and 4.8 × 10–5 cm2/V, respectively.
Co-reporter:Arief C. Wibowo, Christos D. Malliakas, Hao Li, Constantinos C. Stoumpos, Duck Young Chung, Bruce W. Wessels, Arthur J. Freeman, and Mercouri G. Kanatzidis
Crystal Growth & Design 2016 Volume 16(Issue 5) pp:2678
Publication Date(Web):March 16, 2016
DOI:10.1021/acs.cgd.5b01802
We assess the mercury chalcohalide compound, β-Hg3S2Cl2, as a potential semiconductor material for X-ray and γ-ray detection. It has a high density (6.80 g/cm3) and wide band gap (2.56 eV) and crystallizes in the cubic Pm3̅n space group with a three-dimensional structure comprised of [Hg12S8] cubes with Cl atoms located within and between the cubes, featuring a trigonal pyramidal SHg3 as the main building block. First-principle electronic structure calculations at the density functional theory level predict that the compound has closely lying indirect and direct band gaps. We have successfully grown transparent, single crystals of β-Hg3S2Cl2 up to 7 mm diameter and 1 cm long using a new approach by the partial decomposition of the quaternary Hg3Bi2S2Cl8 compound followed by the formation of β-Hg3S2Cl2 and an impermeable top layer, all happening in situ during vertical Bridgman growth. The decomposition process was optimized by varying peak temperatures and temperature gradients using a 2 mm/h translation rate of the Bridgman technique. Formation of the quaternary Hg3Bi2S2Cl8 followed by its partial decomposition into β-Hg3S2Cl2 was confirmed by in situ temperature-dependent synchrotron powder diffraction studies. The single crystal samples obtained had resistivity of 1010 Ω·cm and mobility-lifetime products of electron and hole carriers of 1.4(4) × 10–4 cm2/V and 7.5(3) × 10–5 cm2/V, respectively. Further, an appreciable Ag X-ray photoconductivity response was observed showing the potential of β-Hg3S2Cl2 as a hard radiation detector material.
Co-reporter:Kyunghan Ahn, Huijun Kong, Ctirad Uher, Mercouri G. Kanatzidis
Journal of Solid State Chemistry 2016 Volume 242(Part 2) pp:34-42
Publication Date(Web):October 2016
DOI:10.1016/j.jssc.2016.03.018
The thermoelectric properties of Ag1−x(Pb1−ySny)mSb1−zTem+2 (4≤m≤16, −0.1≤x≤0.3, 1/3≤y≤2/3, 0.2≤z≤0.4; Lead Antimony Silver Tellurium Tin, LASTT-m) compositions were investigated in the temperature range of 300 to ~670 K. All samples crystallize in the average NaCl-type structure without any noticeable second phase and exhibit very narrow bandgaps of <0.1 eV. We studied a range of m values, silver concentrations (x), Pb/Sn ratios (y), and antimony concentrations (z) to determine their effects on the thermoelectric properties. The samples were investigated as melt grown polycrystalline ingots. Varying the Ag contents, the Pb/Sn ratios, and the Sb contents off-stoichiometry allowed us to control the electrical conductivity, the Seebeck coefficient, and the thermal conductivity. The electrical conductivity tends to decrease with decreasing m values. The highest ZT of ~1.1 was achieved at ~660 K for Ag0.9Pb5Sn5Sb0.8Te12 mainly due to the very low lattice thermal conductivity of ~0.4 W/(m K) around 660 K. Also, samples with charge-balanced stoichiometries, Ag(Pb1−ySny)mSbTem+2, were studied and found to exhibit a lower power factor and higher lattice thermal conductivity than the Ag1−x(Pb1−ySny)mSb1−zTem+2 compositions.The Ag1−x(Pb1−ySny)mSb1−zTem+2 system defines a complex and flexible class of tunable thermoelectric class of materials with high performance.
Co-reporter:Li-Dong Zhao, Mercouri G. Kanatzidis
Journal of Materiomics 2016 Volume 2(Issue 2) pp:101-103
Publication Date(Web):June 2016
DOI:10.1016/j.jmat.2016.05.002
Co-reporter:Menghua Zhu, Feng Hao, Lin Ma, Tze-Bin Song, Claire E. Miller, Michael R. Wasielewski, Xin Li, and Mercouri G. Kanatzidis
ACS Energy Letters 2016 Volume 1(Issue 2) pp:469
Publication Date(Web):July 28, 2016
DOI:10.1021/acsenergylett.6b00249
Crystalline selenium (c-Se) is a direct band gap semiconductor and has been developed for detector applications for more than 30 years. While most advances have been made using vacuum deposition processes, it remains a challenge to prepare efficient c-Se devices directly from solution. We demonstrate a simple solution process leading to uniform and high-crystallinity selenium films under ambient conditions. A combination of ethylenediamine (EDA) and hydrazine solvents was found to be effective in dissolving selenium powder and forming highly concentrated solutions. These can be used to infiltrate a mesoporous titanium dioxide layer and form a smooth and pinhole-free capping overlayer. Efficient light-induced charge injection from the crystalline selenium to TiO2 was observed using transient absorption spectroscopy. A small amount of EDA addition in the hydrazine solution was found to improve the film coverage significantly, and on the basis of the finding, we are able to achieve up to 3.52% power conversion efficiency solar cells with a fill factor of 57%. These results provide a method to control the crystalline selenium film and represent significant progress in developing low-cost selenium-based solar cells.
Co-reporter:Dr. Wolfgang G. Zeier;Dr. Alex Zevalkink;Zachary M. Gibbs; Geoffroy Hautier; Mercouri G. Kanatzidis; G. Jeffrey Snyder
Angewandte Chemie 2016 Volume 128( Issue 24) pp:6938-6954
Publication Date(Web):
DOI:10.1002/ange.201508381

Abstract

Effiziente thermoelektrische Materialien werden durch ein Zusammenspiel von stark voneinander abhängenden Transporteigenschaften erreicht. Um diese wissentlich zu beeinflussen, wird ein tieferes Verständnis der Chemie und Physik in Festkörpern benötigt. Auf der Grundlage von Molekülorbitaldiagrammen, der “Tight-Binding”-Methode und dem klassischem Verständnis von Bindungsstärken betrachten wir das gezielte Design thermoelektrischer Materialien. Hierbei werden Parameter wie Elektronegativität, Bandbreite, Orbitalüberlappung sowie Bindungsenergie und -länge herangezogen, um Trends der elektronischen Eigenschaften wie Größe und Temperaturabhängigkeit von Bandlücken, effektive Masse der Ladungsträger sowie Bandentartung und Bandkonvergenz zu erklären. Gitterwärmeleitfähigkeiten werden in Bezug auf die Kristallstruktur und Bindungsstärke behandelt, um den Einfluss von Bindungslängen zu verdeutlichen. Wir zeigen, wie Symmetrie und Stärke von Bindungen den Transport von Elektronen und Phononen beeinflussen und wie gezielte Strategien zu Veränderungen und zur Verbesserung thermoelektrischer Effizienz führen können.

Co-reporter:Li-Dong Zhao;Gangjian Tan;Yanling Pei;Jiaqing He;Shengkai Gong;Heng Wang;Ctirad Uher;Huibin Xu;Chris Wolverton;G. Jeffrey Snyder;Vinayak P. Dravid;Shiqiang Hao;Hang Chi
Science 2016 Volume 351(Issue 6269) pp:
Publication Date(Web):
DOI:10.1126/science.aad3749

Heat conversion gets a power boost

Thermoelectric materials convert waste heat into electricity, but often achieve high conversion efficiencies only at high temperatures. Zhao et al. tackle this problem by introducing small amounts of sodium to the thermoelectric SnSe (see the Perspective by Behnia). This boosts the power factor, allowing the material to generate more energy while maintaining good conversion efficiency. The effect holds across a wide temperature range, which is attractive for developing new applications.

Science, this issue p. 141; see also p. 124

Co-reporter:Jian Liu;Matthew S. Kelley;Weiqiang Wu;Abhishek Banerjee;Alexios P. Douvalis;Jinsong Wu;Yongbo Zhang;George C. Schatz
PNAS 2016 Volume 113 (Issue 20 ) pp:5530-5535
Publication Date(Web):2016-05-17
DOI:10.1073/pnas.1605512113
A nitrogenase-inspired biomimetic chalcogel system comprising double-cubane [Mo2Fe6S8(SPh)3] and single-cubane (Fe4S4) biomimetic clusters demonstrates photocatalytic N2 fixation and conversion to NH3 in ambient temperature and pressure conditions. Replacing the Fe4S4 clusters in this system with other inert ions such as Sb3+, Sn4+, Zn2+ also gave chalcogels that were photocatalytically active. Finally, molybdenum-free chalcogels containing only Fe4S4 clusters are also capable of accomplishing the N2 fixation reaction with even higher efficiency than their Mo2Fe6S8(SPh)3-containing counterparts. Our results suggest that redox-active iron-sulfide–containing materials can activate the N2 molecule upon visible light excitation, which can be reduced all of the way to NH3 using protons and sacrificial electrons in aqueous solution. Evidently, whereas the Mo2Fe6S8(SPh)3 is capable of N2 fixation, Mo itself is not necessary to carry out this process. The initial binding of N2 with chalcogels under illumination was observed with in situ diffuse-reflectance Fourier transform infrared spectroscopy (DRIFTS). 15N2 isotope experiments confirm that the generated NH3 derives from N2. Density functional theory (DFT) electronic structure calculations suggest that the N2 binding is thermodynamically favorable only with the highly reduced active clusters. The results reported herein contribute to ongoing efforts of mimicking nitrogenase in fixing nitrogen and point to a promising path in developing catalysts for the reduction of N2 under ambient conditions.
Co-reporter:Dr. Wolfgang G. Zeier;Dr. Alex Zevalkink;Zachary M. Gibbs; Geoffroy Hautier; Mercouri G. Kanatzidis; G. Jeffrey Snyder
Angewandte Chemie International Edition 2016 Volume 55( Issue 24) pp:6826-6841
Publication Date(Web):
DOI:10.1002/anie.201508381

Abstract

The coupled transport properties required to create an efficient thermoelectric material necessitates a thorough understanding of the relationship between the chemistry and physics in a solid. We approach thermoelectric material design using the chemical intuition provided by molecular orbital diagrams, tight binding theory, and a classic understanding of bond strength. Concepts such as electronegativity, band width, orbital overlap, bond energy, and bond length are used to explain trends in electronic properties such as the magnitude and temperature dependence of band gap, carrier effective mass, and band degeneracy and convergence. The lattice thermal conductivity is discussed in relation to the crystal structure and bond strength, with emphasis on the importance of bond length. We provide an overview of how symmetry and bonding strength affect electron and phonon transport in solids, and how altering these properties may be used in strategies to improve thermoelectric performance.

Co-reporter:Takamichi Yokoyama; Duyen H. Cao; Constantinos C. Stoumpos; Tze-Bin Song; Yoshiharu Sato; Shinji Aramaki
The Journal of Physical Chemistry Letters 2016 Volume 7(Issue 5) pp:776-782
Publication Date(Web):February 15, 2016
DOI:10.1021/acs.jpclett.6b00118
The development of Sn-based perovskite solar cells has been challenging because devices often show short-circuit behavior due to poor morphologies and undesired electrical properties of the thin films. A low-temperature vapor-assisted solution process (LT-VASP) has been employed as a novel kinetically controlled gas–solid reaction film fabrication method to prepare lead-free CH3NH3SnI3 thin films. We show that the solid SnI2 substrate temperature is the key parameter in achieving perovskite films with high surface coverage and excellent uniformity. The resulting high-quality CH3NH3SnI3 films allow the successful fabrication of solar cells with drastically improved reproducibility, reaching an efficiency of 1.86%. Furthermore, our Kelvin probe studies show the VASP films have a doping level lower than that of films prepared from the conventional one-step method, effectively lowering the film conductivity. Above all, with (LT)-VASP, the short-circuit behavior often obtained from the conventional one-step-fabricated Sn-based perovskite devices has been overcome. This study facilitates the path to more successful Sn-perovskite photovoltaic research.
Co-reporter:Gangjian Tan, Fengyuan Shi, Jeff W. Doak, Hui Sun, Li-Dong Zhao, Pengli Wang, Ctirad Uher, Chris Wolverton, Vinayak P. Dravid and Mercouri G. Kanatzidis  
Energy & Environmental Science 2015 vol. 8(Issue 1) pp:267-277
Publication Date(Web):23 Oct 2014
DOI:10.1039/C4EE01463D
We report several synergistic effects in Hg alloying of SnTe to enhance the power factor and overall figure of merit ZT. Hg alloying decreases the energy separation between the two valence bands, leading to pronounced band convergence that improves the Seebeck coefficient. Hg alloying of SnTe also significantly enlarges the band gap thereby effectively suppressing the bipolar diffusion. Collectively, this results in high ZT of ∼1.35 at 910 K for 2% Bi-doped SnTe with 3%HgTe. The solubility limit of Hg in SnTe is less than 3 mol%, and above this level we observe HgTe precipitates in the SnTe matrix, typically trapped at grain boundary triple junctions. The strong point defect scattering of phonons caused by Hg alloying coupled with mesoscale scattering via grain boundaries contributes to a great reduction of lattice thermal conductivity. The multiple synergistic roles that Hg plays in regulating the electron and phonon transport in SnTe provide important new insights into continued optimization of SnTe-based and related materials.
Co-reporter:Constantinos C. Stoumpos and Mercouri G. Kanatzidis
Accounts of Chemical Research 2015 Volume 48(Issue 10) pp:2791
Publication Date(Web):September 9, 2015
DOI:10.1021/acs.accounts.5b00229
The recent re-emergence of the halide perovskites, of the type AMX3, derives from a sea-changing breakthrough in the field of photovoltaics that has led to a whole new generation of solar devices with remarkable power conversion efficiency. The success in the field of photovoltaics has led to intense, combined research efforts to better understand these materials both from the fundamental chemistry and physics points of view and for the improvement of applied functional device engineering. This groundswell of activity has breathed new life into this long-known but largely “forgotten” class of perovskites. The impressive achievements of halide perovskites in photovoltaics, as well as other optoelectronic applications, stem from an unusually favorable combination of optical and electronic properties, with the ability to be solution processed into films. This defines them as a brand new class of semiconductors that can rival or exceed the performance of the venerable classes of III–V and II–IV semiconductors, which presently dominate the industries of applied optoelectronics.Our aim in this Account is to highlight the basic pillars that define the chemistry of the halide perovskites and their unconventional electronic properties through the prism of structure–property relationships. We focus on the synthetic requirements under which a halide perovskite can exist and emphasize how the synthetic conditions can determine the structural integrity and the bulk properties of the perovskites. Then we proceed to discuss the origins of the optical and electronic phenomena, using the perovskite crystal structure as a guide. Some of the most remarkable features of the perovskites dealt with in this Account include the evolution of a unique type of defect, which gives rise to superlattices. These can enhance or diminish the fluorescence properties of the perovskites. For example, the exotic self-doping ability of the Sn-based perovskites allows them to adopt electrical properties from semiconducting to metallic. We attempt to rationalize how these properties can be tuned and partially controlled through targeted synthetic procedures for use in electronic and optical devices. In addition, we address open scientific questions that pose big obstacles in understanding the fundamentals of perovskites. We anticipate that the answers to these questions will provide the impetus upon which future research directions will be founded.
Co-reporter:Kota S. Subrahmanyam; Christos D. Malliakas; Debajit Sarma; Gerasimos S. Armatas; Jinsong Wu
Journal of the American Chemical Society 2015 Volume 137(Issue 43) pp:13943-13948
Publication Date(Web):October 10, 2015
DOI:10.1021/jacs.5b09110
We report the synthesis of ion-exchangeable molybdenum sulfide chalcogel through an oxidative coupling process, using (NH4)2MoS4 and iodine. After supercritical drying, the MoSx amorphous aerogel shows a large surface area up to 370 m2/g with a broad range of pore sizes. X-ray photoelectron spectroscopic and pair distribution function analyses reveal that Mo6+ species undergo reduction during network assembly to produce Mo4+-containing species where the chalcogel network consists of [Mo3S13] building blocks comprising triangular Mo metal clusters and S22– units. The optical band gap of the brown-black chalcogel is ∼1.36 eV. The ammonium sites present in the molybdenum sulfide chalcogel network are ion-exchangeable with K+ and Cs+ ions. The molybdenum sulfide aerogel exhibits high adsorption selectivities for CO2 and C2H6 over H2 and CH4. The aerogel also possesses high affinity for iodine and mercury.
Co-reporter:Feng Hao; Constantinos C. Stoumpos; Peijun Guo; Nanjia Zhou; Tobin J. Marks; Robert P. H. Chang
Journal of the American Chemical Society 2015 Volume 137(Issue 35) pp:11445-11452
Publication Date(Web):August 27, 2015
DOI:10.1021/jacs.5b06658
Organo-lead halide perovskite solar cells have gained enormous significance and have now achieved power conversion efficiencies of ∼20%. However, the potential toxicity of lead in these systems raises environmental concerns for widespread deployment. Here we investigate solvent effects on the crystallization of the lead-free methylammonium tin triiodide (CH3NH3SnI3) perovskite films in a solution growth process. Highly uniform, pinhole-free perovskite films are obtained from a dimethyl sulfoxide (DMSO) solution via a transitional SnI2·3DMSO intermediate phase. This high-quality perovskite film enables the realization of heterojunction depleted solar cells based on mesoporous TiO2 layer but in the absence of any hole-transporting material with an unprecedented photocurrent up to 21 mA cm–2. Charge extraction and transient photovoltage decay measurements reveal high carrier densities in the CH3NH3SnI3 perovskite device which are one order of magnitude larger than CH3NH3PbI3-based devices but with comparable recombination lifetimes in both devices. The relatively high background dark carrier density of the Sn-based perovskite is responsible for the lower photovoltaic efficiency in comparison to the Pb-based analogues. These results provide important progress toward achieving improved perovskite morphology control in realizing solution-processed highly efficient lead-free perovskite solar cells.
Co-reporter:Abhishek Banerjee; Benjamin D. Yuhas; Eric A. Margulies; Yongbo Zhang; Yurina Shim; Michael R. Wasielewski
Journal of the American Chemical Society 2015 Volume 137(Issue 5) pp:2030-2034
Publication Date(Web):January 15, 2015
DOI:10.1021/ja512491v
In nature, nitrogen fixation is one of the most important life processes and occurs primarily in microbial organisms containing enzymes called nitrogenases. These complex proteins contain two distinct subunits with different active sites, with the primary N2 binding site being a FeMoS core cluster that can be reduced by other nearby iron–sulfur clusters. Although nitrogen reduction to ammonia in biology does not require the absorption of light, there is considerable interest in developing catalyst materials that could drive the formation of ammonia from nitrogen photochemically. Here, we report that chalcogels containing FeMoS inorganic clusters are capable of photochemically reducing N2 to NH3 under white light irradiation, in aqueous media, under ambient pressure and room temperature. The chalcogels are composed of [Mo2Fe6S8(SPh)3]3+ and [Sn2S6]4– clusters in solution and have strong optical absorption, high surface area, and good aqueous stability. Our results demonstrate that light-driven nitrogen conversion to ammonia by MoFe sulfides is a viable process with implications in solar energy utilization and our understanding of primordial processes on earth.
Co-reporter:Gangjian Tan; Fengyuan Shi; Shiqiang Hao; Hang Chi; Li-Dong Zhao; Ctirad Uher; Chris Wolverton; Vinayak P. Dravid
Journal of the American Chemical Society 2015 Volume 137(Issue 15) pp:5100-5112
Publication Date(Web):April 9, 2015
DOI:10.1021/jacs.5b00837
We report a significant enhancement of the thermoelectric performance of p-type SnTe over a broad temperature plateau with a peak ZT value of ∼1.4 at 923 K through In/Cd codoping and a CdS nanostructuring approach. Indium and cadmium play different but complementary roles in modifying the valence band structure of SnTe. Specifically, In-doping introduces resonant levels inside the valence bands, leading to a considerably improved Seebeck coefficient at low temperature. Cd-doping, however, increases the Seebeck coefficient of SnTe remarkably in the mid- to high-temperature region via a convergence of the light and heavy hole bands and an enlargement of the band gap. Combining the two dopants in SnTe yields enhanced Seebeck coefficient and power factor over a wide temperature range due to the synergy of resonance levels and valence band convergence, as demonstrated by the Pisarenko plot and supported by first-principles band structure calculations. Moreover, these codoped samples can be hierarchically structured on all scales (atomic point defects by doping, nanoscale precipitations by CdS nanostructuring, and mesoscale grains by SPS treatment) to achieve highly effective phonon scattering leading to strongly reduced thermal conductivities. In addition to the high maximum ZT the resultant large average ZT of ∼0.8 between 300 and 923 K makes SnTe an attractive p-type material for high-temperature thermoelectric power generation.
Co-reporter:Maria Ibáñez; Rachel J. Korkosz; Zhishan Luo; Pau Riba; Doris Cadavid; Silvia Ortega; Andreu Cabot
Journal of the American Chemical Society 2015 Volume 137(Issue 12) pp:4046-4049
Publication Date(Web):March 11, 2015
DOI:10.1021/jacs.5b00091
A simple and effective method to introduce precise amounts of doping in nanomaterials produced from the bottom-up assembly of colloidal nanoparticles (NPs) is described. The procedure takes advantage of a ligand displacement step to incorporate controlled concentrations of halide ions while removing carboxylic acids from the NP surface. Upon consolidation of the NPs into dense pellets, halide ions diffuse within the crystal structure, doping the anion sublattice and achieving n-type electrical doping. Through the characterization of the thermoelectric properties of nanocrystalline PbS, we demonstrate this strategy to be effective to control charge transport properties on thermoelectric nanomaterials assembled from NP building blocks. This approach is subsequently extended to PbTexSe1–x@PbS core–shell NPs, where a significant enhancement of the thermoelectric figure of merit is achieved.
Co-reporter:Shulan Ma; Lu Huang; Lijiao Ma; Yurina Shim; Saiful M. Islam; Pengli Wang; Li-Dong Zhao; Shichao Wang; Genban Sun; Xiaojing Yang
Journal of the American Chemical Society 2015 Volume 137(Issue 10) pp:3670-3677
Publication Date(Web):February 25, 2015
DOI:10.1021/jacs.5b00762
There is a need to develop highly selective and efficient materials for capturing uranium (normally as UO22+) from nuclear waste and from seawater. We demonstrate the promising adsorption performance of Sx-LDH composites (LDH is Mg/Al layered double hydroxide, [Sx]2– is polysulfide with x = 2, 4) for uranyl ions from a variety of aqueous solutions including seawater. We report high removal capacities (qm = 330 mg/g), large KdU values (104–106 mL/g at 1–300 ppm U concentration), and high % removals (>95% at 1–100 ppm, or ∼80% for ppb level seawater) for UO22+ species. The Sx-LDHs are exceptionally efficient for selectively and rapidly capturing UO22+ both at high (ppm) and trace (ppb) quantities from the U-containing water including seawater. The maximum adsorption coeffcient value KdU of 3.4 × 106 mL/g (using a V/m ratio of 1000 mL/g) observed is among the highest reported for U adsorbents. In the presence of very high concentrations of competitive ions such as Ca2+/Na+, Sx-LDH exhibits superior selectivity for UO22+, over previously reported sorbents. Under low U concentrations, (S4)2– coordinates to UO22+ forming anionic complexes retaining in the LDH gallery. At high U concentrations, (S4)2– binds to UO22+ to generate neutral UO2S4 salts outside the gallery, with NO3– entering the interlayer to form NO3-LDH. In the presence of high Cl– concentration, Cl– preferentially replaces [S4]2– and intercalates into LDH. Detailed comparison of U removal efficiency of Sx-LDH with various known sorbents is reported. The excellent uranium adsorption ability along with the environmentally safe, low-cost constituents points to the high potential of Sx-LDH materials for selective uranium capture.
Co-reporter:Lei Fang; Jino Im; Constantinos C. Stoumpos; Fengyuan Shi; Vinayak Dravid; Maxime Leroux; Arthur J. Freeman; Wai-Kwong Kwok; Duck Young Chung;Mercouri Kanatzidis
Journal of the American Chemical Society 2015 Volume 137(Issue 6) pp:2311-2317
Publication Date(Web):January 21, 2015
DOI:10.1021/ja5111688
Two-dimensional (2D) electronic systems are of wide interest due to their richness in chemical and physical phenomena and potential for technological applications. Here we report that [Pb2BiS3][AuTe2], known as the naturally occurring mineral buckhornite, hosts 2D carriers in single-atom-thick layers. The structure is composed of stacking layers of weakly coupled [Pb2BiS3] and [AuTe2] sheets. The insulating [Pb2BiS3] sheet inhibits interlayer charge hopping and confines the carriers in the basal plane of the single-atom-thick [AuTe2] layer. Magneto-transport measurements on synthesized samples and theoretical calculations show that [Pb2BiS3][AuTe2] is a multiband semimetal with a compensated density of electrons and holes, which exhibits a high hole carrier mobility of ∼1360 cm2/(V s). This material possesses an extremely large anisotropy, Γ = ρc/ρab ≈ 104, comparable to those of the benchmark 2D materials graphite and Bi2Sr2CaCu2O6+δ. The electronic structure features linear band dispersion at the Fermi level and ultrahigh Fermi velocities of 106 m/s, which are virtually identical to those of graphene. The weak interlayer coupling gives rise to the highly cleavable property of the single crystal specimens. Our results provide a novel candidate for a monolayer platform to investigate emerging electronic properties.
Co-reporter:Gangjian Tan; Fengyuan Shi; Shiqiang Hao; Hang Chi; Trevor P. Bailey; Li-Dong Zhao; Ctirad Uher; Chris Wolverton; Vinayak P. Dravid
Journal of the American Chemical Society 2015 Volume 137(Issue 35) pp:11507-11516
Publication Date(Web):August 26, 2015
DOI:10.1021/jacs.5b07284
We demonstrate a high solubility limit of >9 mol% for MnTe alloying in SnTe. The electrical conductivity of SnTe decreases gradually while the Seebeck coefficient increases remarkably with increasing MnTe content, leading to enhanced power factors. The room-temperature Seebeck coefficients of Mn-doped SnTe are significantly higher than those predicted by theoretical Pisarenko plots for pure SnTe, indicating a modified band structure. The high-temperature Hall data of Sn1–xMnxTe show strong temperature dependence, suggestive of a two-valence-band conduction behavior. Moreover, the peak temperature of the Hall plot of Sn1–xMnxTe shifts toward lower temperature as MnTe content is increased, which is clear evidence of decreased energy separation (band convergence) between the two valence bands. The first-principles electronic structure calculations based on density functional theory also support this point. The higher doping fraction (>9%) of Mn in comparison with ∼3% for Cd and Hg in SnTe gives rise to a much better valence band convergence that is responsible for the observed highest Seebeck coefficient of ∼230 μV/K at 900 K. The high doping fraction of Mn in SnTe also creates stronger point defect scattering, which when combined with ubiquitous endotaxial MnTe nanostructures when the solubility of Mn is exceeded scatters a wide spectrum of phonons for a low lattice thermal conductivity of 0.9 W m–1 K–1 at 800 K. The synergistic role that Mn plays in regulating the electron and phonon transport of SnTe yields a high thermoelectric figure of merit of 1.3 at 900 K.
Co-reporter:Ronald B. Soriano; Jinsong Wu
Journal of the American Chemical Society 2015 Volume 137(Issue 31) pp:9937-9942
Publication Date(Web):July 16, 2015
DOI:10.1021/jacs.5b05562
A series of PbmSb2nSem+3n nanocrystals (m = 2, 4, 6 and 8; n = 1) are demonstrated that exist only as a distinct phase on the nanoscale. The nanocrystals aggregates are new compounds adopting the cubic NaCl-type structure. These materials form aggregates comprised of nanocrystallites that are attached at a preferred orientation. Elemental compositions were studied using the complementary techniques of scanning transmission electron microscopy/energy dispersive X-ray spectroscopy and inductively coupled plasma-atomic emission spectroscopy. The new ternary nanocrystal aggregates are moderately monodisperse and exhibit well-defined band gap energies in the mid-IR region. The PbmSb2nSem+3n nanomaterials behave as homogeneous solid solutions with lattice parameter trending as a function of Sb incorporation at room temperature and tend to phase separate into PbSe and Sb2Se3 at 400 °C.
Co-reporter:Duyen H. Cao; Constantinos C. Stoumpos; Omar K. Farha; Joseph T. Hupp
Journal of the American Chemical Society 2015 Volume 137(Issue 24) pp:7843-7850
Publication Date(Web):May 28, 2015
DOI:10.1021/jacs.5b03796
We report on the fabrication and properties of the semiconducting 2D (CH3(CH2)3NH3)2(CH3NH3)n–1PbnI3n+1 (n = 1, 2, 3, and 4) perovskite thin films. The band gaps of the series decrease with increasing n values, from 2.24 eV (CH3(CH2)3NH3)2PbI4 (n = 1) to 1.52 eV CH3NH3PbI3 (n = ∞). The compounds exhibit strong light absorption in the visible region, accompanied by strong photoluminescence at room temperature, rendering them promising light absorbers for photovoltaic applications. Moreover, we find that thin films of the semi-2D perovskites display an ultrahigh surface coverage as a result of the unusual film self-assembly that orients the [PbnI3n+1]− layers perpendicular to the substrates. We have successfully implemented this 2D perovskite family in solid-state solar cells, and obtained an initial power conversion efficiency of 4.02%, featuring an open-circuit voltage (Voc) of 929 mV and a short-circuit current density (Jsc) of 9.42 mA/cm2 from the n = 3 compound. This result is even more encouraging considering that the device retains its performance after long exposure to a high-humidity environment. Overall, the homologous 2D halide perovskites define a promising class of stable and efficient light-absorbing materials for solid-state photovoltaics and other applications.
Co-reporter:Constantinos C. Stoumpos; Laszlo Frazer; Daniel J. Clark; Yong Soo Kim; Sonny H. Rhim; Arthur J. Freeman; John B. Ketterson; Joon I. Jang
Journal of the American Chemical Society 2015 Volume 137(Issue 21) pp:6804-6819
Publication Date(Web):May 7, 2015
DOI:10.1021/jacs.5b01025
The synthesis and properties of the hybrid organic/inorganic germanium perovskite compounds, AGeI3, are reported (A = Cs, organic cation). The systematic study of this reaction system led to the isolation of 6 new hybrid semiconductors. Using CsGeI3 (1) as the prototype compound, we have prepared methylammonium, CH3NH3GeI3 (2), formamidinium, HC(NH2)2GeI3 (3), acetamidinium, CH3C(NH2)2GeI3 (4), guanidinium, C(NH2)3GeI3 (5), trimethylammonium, (CH3)3NHGeI3 (6), and isopropylammonium, (CH3)2C(H)NH3GeI3 (7) analogues. The crystal structures of the compounds are classified based on their dimensionality with 1–4 forming 3D perovskite frameworks and 5–7 1D infinite chains. Compounds 1–7, with the exception of compounds 5 (centrosymmetric) and 7 (nonpolar acentric), crystallize in polar space groups. The 3D compounds have direct band gaps of 1.6 eV (1), 1.9 eV (2), 2.2 eV (3), and 2.5 eV (4), while the 1D compounds have indirect band gaps of 2.7 eV (5), 2.5 eV (6), and 2.8 eV (7). Herein, we report on the second harmonic generation (SHG) properties of the compounds, which display remarkably strong, type I phase-matchable SHG response with high laser-induced damage thresholds (up to ∼3 GW/cm2). The second-order nonlinear susceptibility, χS(2), was determined to be 125.3 ± 10.5 pm/V (1), (161.0 ± 14.5) pm/V (2), 143.0 ± 13.5 pm/V (3), and 57.2 ± 5.5 pm/V (4). First-principles density functional theory electronic structure calculations indicate that the large SHG response is attributed to the high density of states in the valence band due to sp-hybridization of the Ge and I orbitals, a consequence of the lone pair activation.
Co-reporter:Peng L. Wang;Zhifu Liu;Pice Chen;John A. Peters;Gangjian Tan;Jino Im;Wenwen Lin;Arthur J. Freeman;Bruce W. Wessels
Advanced Functional Materials 2015 Volume 25( Issue 30) pp:4874-4881
Publication Date(Web):
DOI:10.1002/adfm.201501826

The heavy metal selenophosphate, Pb2P2Se6, is a promising new material for cost-effective X-ray/γ-ray detection. Crystal boules of Pb2P2Se6 up to 25 mm in length and 15 mm in diameter are grown by a vertical Bridgman method. They are cut and processed into size-appropriate wafers for physical, photo-transport property studies, as well as γ-ray detector testing. The material is a semiconductor with an indirect bandgap of 1.88 eV and has electrical resistivity in the range of 1 × 1010 Ω cm. Pb2P2Se6 single crystal samples display a significant photoconductivity response to optical, X-ray, and γ-ray radiation. When tested with a 57Co γ-ray source, Pb2P2Se6 crystals show spectroscopic response and several generated pulse height spectra resolving the 122.1 and 136.5 keV 57Co radiation. The mobility–lifetime product of Pb2P2Se6 is estimated to be ≈3.5 × 10−5 cm2 V−1 for electron carriers. The Pb2P2Se6 compound melts congruently at 812 °C and has robust chemical/physical properties that promise low cost bulk production and detector development.

Co-reporter:Gangjian Tan, Wolfgang G. Zeier, Fengyuan Shi, Pengli Wang, G. Jeffery Snyder, Vinayak P. Dravid, and Mercouri G. Kanatzidis
Chemistry of Materials 2015 Volume 27(Issue 22) pp:7801
Publication Date(Web):November 6, 2015
DOI:10.1021/acs.chemmater.5b03708
Herein, we report a significantly improved thermoelectric figure of merit ZT of ∼1.1 at ∼923 K in p-type SnTe through In2Te3 alloying and iodine doping. We propose that the introduction of indium at Sn sites in SnTe creates resonant levels inside the valence bands, thereby considerably increasing the Seebeck coefficients and power factors in the low-to-middle temperature range. Unlike SnTe–InTe, the SnTe–In2Te3 system displays much lower lattice thermal conductivity. Utilizing a model for point defect scattering, we analyze the origin of the low thermal conductivity in SnTe–In2Te3 and attribute it mainly to the strong vacancy originated phonon scattering between Sn atoms and the vacancies introduced by In2Te3 alloying and partly to the interfacial scattering by In-rich nanoprecipitates present in SnTe matrix. By alloying only In2Te3 with SnTe, a ZT value of ∼0.9 at 923 K was achieved. ZT can be further increased to ∼1.1 at 923 K through adjusting the charge carriers by iodine doping at Te sites.
Co-reporter:Zohreh Hassanzadeh Fard, Saiful M. Islam, and Mercouri G. Kanatzidis
Chemistry of Materials 2015 Volume 27(Issue 18) pp:6189
Publication Date(Web):September 3, 2015
DOI:10.1021/acs.chemmater.5b02805
Co-reporter:Fei Han, Di Wang, Christos D. Malliakas, Mihai Sturza, Duck Young Chung, Xiangang Wan, and Mercouri G. Kanatzidis
Chemistry of Materials 2015 Volume 27(Issue 16) pp:5695
Publication Date(Web):July 20, 2015
DOI:10.1021/acs.chemmater.5b02164
A new iron-oxychalcogenide (CaO)(FeSe) was obtained which crystallizes in the orthorhombic space group Pnma (No. 62) with a = 5.9180(12) Å, b = 3.8802(8) Å, c = 13.193(3) Å. The unique structure of (CaO)(FeSe) is built up of a quasi-two-dimensional network of corrugated infinite layers of corner-shared FeSe2O2 tetrahedra that extend in the ab plane. The corrugated layers composed of corner-shared FeSe2O2 tetrahedra stack along the c axis with Ca2+ cations sandwiched between the layers. Optical spectroscopy and resistivity measurements reveal semiconducting behavior with an indirect optical band gap of around 1.8 eV and an activation energy of 0.19(1) eV. Electronic band structure calculations at the density function level predict a magnetic configuration as ground state and confirm the presence of an indirect wide gap in (CaO)(FeSe).
Co-reporter:Hao Li, Christos D. Malliakas, Fei Han, Duck Young Chung, and Mercouri G. Kanatzidis
Chemistry of Materials 2015 Volume 27(Issue 15) pp:5417
Publication Date(Web):July 14, 2015
DOI:10.1021/acs.chemmater.5b02242
The quaternary compound TlHgInS3 crystallizes in a new structure type of space group, C2/c, with cell parameters a = 13.916(3) Å, b = 3.9132(8) Å, c = 21.403(4) Å, β = 104.16(3)°, V = 1130.1(8) Å3, and ρ = 7.241 g/cm3. The structure is a unique three-dimensional framework with parallel tunnels, which is formed by ∞1[InS33–] infinite chains bridged by linearly coordinated Hg2+ ions. TlHgInS3 is a semiconductor with a band gap of 1.74 eV and a resistivity of ∼4.32 GΩ cm. TlHgInS3 single crystals exhibit photocurrent response when exposed to Ag X-rays. The mobility-lifetime product (μτ) of the electrons and holes estimated from the photocurrent measurements are (μτ)e ≈ 3.6 × 10–4 cm2/V and (μτ)h ≈ 2.0 × 10–4 cm2/V. Electronic structure calculations at the density functional theory level indicate an indirect band gap and a relatively small effective mass for both electrons and holes. Based on the photoconductivity data, TlHgInS3 is a potential material for radiation detection applications.
Co-reporter:Mihai Sturza, Jared M. Allred, Christos D. Malliakas, Daniel E. Bugaris, Fei Han, Duck Young Chung, and Mercouri G. Kanatzidis
Chemistry of Materials 2015 Volume 27(Issue 9) pp:3280
Publication Date(Web):April 13, 2015
DOI:10.1021/acs.chemmater.5b00287
Effecting and controlling ferromagnetic-like properties in semiconductors has proven to be a complex problem, especially when approaching room temperature. Here, we demonstrate the important role of defects in the magnetic properties of semiconductors by reporting the structures and properties of the iron chalcogenides (BaF)2Fe2–xQ3 (Q = S, Se), which exhibit anomalous magnetic properties that are correlated with defects in the Fe-sublattice. The compounds form in both long-range ordered and disordered polytypes of a new structure typified by the alternate stacking of fluorite (BaF)22+ and (Fe2–xQ3)2– layers. The latter layers exhibit an ordered array of strong Fe–Fe dimers in edge-sharing tetrahedra. Given the strong Fe–Fe interaction, it is expected that the Fe–Fe dimer is antiferromagnetically coupled, yet crystals exhibit a weak ferromagnetic moment that orders at relatively high temperature: below 280–315 K and 240–275 K for the sulfide and selenide analogues, respectively. This transition temperature positively correlates with the concentration of defects in the Fe-sublattice, as determined by single-crystal X-ray diffraction. Our results indicate that internal defects in Fe2–xQ3 layers play an important role in dictating the magnetic properties of newly discovered (BaF)2Fe2–xQ3 (Q = S, Se), which can yield switchable ferromagnetically ordered moments at or above room temperature.
Co-reporter:K. S. Subrahmanyam, Debajit Sarma, Christos D. Malliakas, Kyriaki Polychronopoulou, Brian J. Riley, David A. Pierce, Jaehun Chun, and Mercouri G. Kanatzidis
Chemistry of Materials 2015 Volume 27(Issue 7) pp:2619
Publication Date(Web):March 16, 2015
DOI:10.1021/acs.chemmater.5b00413
Iodine (129I and 131I) is one of the radionuclides released in nuclear fuel reprocessing and poses a risk to public safety due to its involvement in human metabolic processes. In order to prevent the release of hazardous radioactive iodine into the environment, its effective capture and sequestration is pivotal. In the context of finding a suitable matrix for capturing radioactive iodine, several sulfidic chalcogels were explored as iodine sorbents including NiMoS4, CoMoS4, Sb4Sn3S12, Zn2Sn2S6, and K0.16CoSx (x = 4–5). All of the chalcogels showed high uptake, reaching up to 225 mass % (2.25 g/g) of the final mass owing to strong chemical and physical iodine–sulfide interactions. Analysis of the iodine-loaded specimens revealed that the iodine chemically reacted with Sb4Sn3S12, Zn2Sn2S6, and K0.16CoSx to form the metal complexes SbI3, SnI4, and, KI, respectively. The NiMoS4 and CoMoS4 chalcogels did not appear to undergo a chemical reaction with iodine since iodide complexes were not observed with these samples. Once heated, the iodine-loaded chalcogels released iodine in the temperature range of 75 to 220 °C, depending on the nature of iodine speciation. In the case of Sb4Sn3S12 and Zn2Sn2S6, iodine release was observed around 150 °C mainly in the form of SnI4 and SbI3, respectively. The NiMoS4, CoMoS4, and K0.16CoSx released elemental iodine at ∼75 °C, which is consistent with physisorption. Preliminary investigations on consolidation of iodine-loaded Zn2Sn2S6 chalcogel with Sb2S3 as a glass forming additive produced glassy material whose iodine content was around 25 mass %.
Co-reporter:Zohreh Hassanzadeh Fard, Christos D. Malliakas, Joshua L. Mertz, and Mercouri G. Kanatzidis
Chemistry of Materials 2015 Volume 27(Issue 6) pp:1925
Publication Date(Web):March 3, 2015
DOI:10.1021/acs.chemmater.5b00374
Co-reporter:Alyssa S. Haynes, Felix O. Saouma, Calford O. Otieno, Daniel J. Clark, Daniel P. Shoemaker, Joon I. Jang, and Mercouri G. Kanatzidis
Chemistry of Materials 2015 Volume 27(Issue 5) pp:1837
Publication Date(Web):February 12, 2015
DOI:10.1021/acs.chemmater.5b00065
The APSe6 (A = K, K(1–x)Csx, Cs) family of one-dimensional (1D) materials was studied to examine the effects of the cation size on the nonlinear optical (NLO) response. The family has high-performing NLO properties with the noncentrosymmetric parent material, KPSe6, having infinite 1D chains of 1/∞[PSe6–]. This structure has been successfully substituted with cesium up to K0.6Cs0.4PSe6 while retaining the polar character. All compounds crystallize in the space group Pca21 and have band gaps of 2.1 eV. In situ powder X-ray diffraction experiments using synchrotron radiation were used to determine the specifics of the amorphous to crystalline behavior and the crystallization and melting kinetics of the APSe6 system. These measurements revealed a new phase, β-CsPSe6, which is metastable and crystallizes in the noncentrosymmetric tetragonal space group P 4̅21c with a = 12.526(2) Å, c = 12.781(3) Å, V = 2005.3(6) Å3, and Z = 8. The structure is composed of 2 sets of mutually perpendicular 1/∞[PSe6–] chains charge-balanced by Cs cations, and the band gap of β-CsPSe6 is 1.9 eV. Second harmonic generation (SHG) measurements demonstrate that substitution of Cs into KPSe6 maintains the strong NLO signal with a very high SHG coefficient (χ(2)) of ∼150 pm/V for K(1-x)CsxPSe6 and 30 pm/V for β-CsPSe6. Laser-induced damage threshold analysis reveals APSe6 exhibits two-photon absorption (2PA) at 1064 nm with input laser intensity greater than 1 GW/cm2 and optical damage from 2PA at ∼2 GW/cm2. The materials also exhibit strong third harmonic generation (THG) with THG coefficients (χ(3) × 105) for KPSe6, K0.6Cs0.4PSe6, α-CsPSe6, and β-CsPSe6 to be 2.6, 3.1, 1.8, and 1.1 pm2/V2, respectively.
Co-reporter:Jonathan C. Syrigos, Daniel J. Clark, Felix O. Saouma, Samantha M. Clarke, Lei Fang, Joon I. Jang, and Mercouri G. Kanatzidis
Chemistry of Materials 2015 Volume 27(Issue 1) pp:255
Publication Date(Web):December 12, 2014
DOI:10.1021/cm5038217
The new compounds ANb2PSe10, where A = K, Rb and Cs, form from polyselenophosphate flux reactions and crystallize in the noncentrosymmetric space group Pc. They feature infinite one-dimensional 1/∞[Nb2PSe10–] chains separated by alkali cations. The chains consist of [Nb2(Se2)2]4+ clusters bridged by a diselenide and a [PSe4]3– group. The chains pack differently depending on which alkali cation is present in the lattice. As a result, the analogs are not isostructural with respect to each other, and each has a different unit cell. The reaction chemistry involving a multitude of reaction conditions and their respective products is discussed. Other products from these reactions include NbSe3 and Nb2Se9 in both crystalline and microfibrous morphologies. The ANb2PSe10 compounds are stable to oxidation in ambient air but decompose when heated above 350 °C. Their band gaps were measured to be 1.1–1.2 eV and the resistivity of the K analog at room temperature was measured at 4.5 Ω·cm. Nonlinear optical second harmonic generation measurements were done on the Rb analog yielding a χ2 of ∼7 pm/V and showing phase matching behavior.
Co-reporter:Saiful M. Islam, S. Vanishri, Hao Li, Constantinos C. Stoumpos, John. A. Peters, Maria Sebastian, Zhifu Liu, Shichao Wang, Alyssa S. Haynes, Jino Im, Arthur J. Freeman, Bruce Wessels, and Mercouri G. Kanatzidis
Chemistry of Materials 2015 Volume 27(Issue 1) pp:370
Publication Date(Web):December 17, 2014
DOI:10.1021/cm504089r
Cs2Hg3S4 was synthesized by slowly cooling a melted stoichiometric mixture of Hg and Cs2S4. Cs2Hg3S4 crystallizes in the Ibam spacegroup with a = 6.278(1) Å, b = 11.601(2) Å, and c = 14.431(3)Å; dcalc = 6.29 g/cm3. Its crystal structure consists of straight chains of [Hg3S4]n2n– that engage in side-by-side weak bonding interactions forming layers and are charge balanced by Cs+ cations. The thermal stability of this compound was investigated with differential thermal analysis and temperature dependent in situ synchrotron powder diffraction. The thermal expansion coefficients of the a, b, and c axes were assessed at 1.56 × 10–5, 2.79 × 10–5, and 3.04 × 10–5 K–1, respectively. Large single-crystals up to ∼5 cm in length and ∼1 cm in diameter were grown using a vertical Bridgman method. Electrical conductivity and photoconductivity measurements on naturally cleaved crystals of Cs2Hg3S4 gave resistivity ρ of ≥108 Ω·cm and carrier mobility-lifetime (μτ) products of 4.2 × 10–4 and 5.82 × 10–5 cm2 V–1 for electrons and holes, respectively. Cs2Hg3S4 is a semiconductor with a bandgap Eg ∼ 2.8 eV and exhibits photoluminescence (PL) at low temperature. Electronic band structure calculations within the density functional theory (DFT) framework employing the nonlocal hybrid functional within Heyd–Scuseria–Ernzerhof (HSE) formalism indicate a direct bandgap of 2.81 eV at Γ. The theoretical calculations show that the conduction band minimum has a highly dispersive and relatively isotropic mercury-based s-orbital-like character while the valence band maximum features a much less dispersive and more anisotropic sulfur orbital-based band.
Co-reporter:Nicholas P. Calta; Fei Han
Inorganic Chemistry 2015 Volume 54(Issue 17) pp:8794-8799
Publication Date(Web):August 13, 2015
DOI:10.1021/acs.inorgchem.5b01421
This Article reports the synthesis of large single crystals of BaIr2In9 using In flux and their characterization by variable-temperature single-crystal and synchrotron powder X-ray diffraction, resistivity, and magnetization measurements. The title compound adopts the BaFe2Al9-type structure in the space group P6/mmm with room temperature unit cell parameters a = 8.8548(6) Å and c = 4.2696(4) Å. BaIr2In9 exhibits anisotropic thermal expansion behavior with linear expansion along the c axis more than 3 times larger than expansion in the ab plane between 90 and 400 K. This anisotropic expansion originates from a rigid unit mode-like mechanism similar to the mechanism of zero and negative thermal expansion observed in many anomalous thermal expansion materials such as ZrW2O8 and ScF3.
Co-reporter:Daniel E. Bugaris; Fei Han; Jino Im; Duck Young Chung; Arthur J. Freeman
Inorganic Chemistry 2015 Volume 54(Issue 16) pp:8049-8057
Publication Date(Web):August 4, 2015
DOI:10.1021/acs.inorgchem.5b01275
Single crystals of two novel quaternary metal borides, LaOs2Al2B and La2Os2AlB2, have been grown from La/Ni eutectic fluxes. LaOs2Al2B crystallizes in tetragonal space group P4/mmm with the CeCr2Si2C-type structure, and lattice parameters a = 4.2075(6) Å and c = 5.634(1) Å. La2Os2AlB2 exhibits a new crystal structure in monoclinic space group C2/c with lattice parameters a = 16.629(3) Å, b = 6.048(1) Å, c = 10.393(2) Å, and β = 113.96(3)°. Both structures are three-dimensional frameworks with unusual coordination (for solid-state compounds) of the boron atoms by transition metal atoms. The boron atom is square planar in LaOs2Al2B, whereas it exhibits linear and T-shaped geometries in La2Os2AlB2. Electrical resistivity measurements reveal poor metal behavior (ρ300 K ∼ 900 μΩ cm) for La2Os2AlB2, consistent with the electronic band structure calculations, which also predict a metallic character for LaOs2Al2B.
Co-reporter:Nicholas P. Calta;Dr. Jino Im;Alexra P. Rodriguez;Dr. Lei Fang;Dr. Daniel E. Bugaris;Dr. Thomas C. Chasapis; Arthur J. Freeman; Mercouri G. Kanatzidis
Angewandte Chemie 2015 Volume 127( Issue 32) pp:
Publication Date(Web):
DOI:10.1002/ange.201583261
Co-reporter:Nicholas P. Calta;Dr. Jino Im;Alexra P. Rodriguez;Dr. Lei Fang;Dr. Daniel E. Bugaris;Dr. Thomas C. Chasapis; Arthur J. Freeman; Mercouri G. Kanatzidis
Angewandte Chemie International Edition 2015 Volume 54( Issue 32) pp:
Publication Date(Web):
DOI:10.1002/anie.201583261
Co-reporter:Nicholas P. Calta;Dr. Jino Im;Alexra P. Rodriguez;Dr. Lei Fang;Dr. Daniel E. Bugaris;Dr. Thomas C. Chasapis; Arthur J. Freeman; Mercouri G. Kanatzidis
Angewandte Chemie 2015 Volume 127( Issue 32) pp:9318-9323
Publication Date(Web):
DOI:10.1002/ange.201504315

Abstract

EuIr4In2Ge4 is a new intermetallic semiconductor that adopts a non-centrosymmetric structure in the tetragonal space group with unit cell parameters a=6.9016(5) Å and c=8.7153(9) Å. The compound features an indirect optical band gap Eg=0.26(2) eV, and electronic-structure calculations show that the energy gap originates primarily from hybridization of the Ir 5d orbitals, with small contributions from the Ge 4p and In 5p orbitals. The strong spin–orbit coupling arising from the Ir atoms, and the lack of inversion symmetry leads to significant spin splitting, which is described by the Dresselhaus term, at both the conduction- and valence-band edges. The magnetic Eu2+ ions present in the structure, which do not play a role in gap formation, order antiferromagnetically at 2.5 K.

Co-reporter:Nicholas P. Calta;Dr. Jino Im;Alexra P. Rodriguez;Dr. Lei Fang;Dr. Daniel E. Bugaris;Dr. Thomas C. Chasapis; Arthur J. Freeman; Mercouri G. Kanatzidis
Angewandte Chemie International Edition 2015 Volume 54( Issue 32) pp:9186-9191
Publication Date(Web):
DOI:10.1002/anie.201504315

Abstract

EuIr4In2Ge4 is a new intermetallic semiconductor that adopts a non-centrosymmetric structure in the tetragonal space group with unit cell parameters a=6.9016(5) Å and c=8.7153(9) Å. The compound features an indirect optical band gap Eg=0.26(2) eV, and electronic-structure calculations show that the energy gap originates primarily from hybridization of the Ir 5d orbitals, with small contributions from the Ge 4p and In 5p orbitals. The strong spin–orbit coupling arising from the Ir atoms, and the lack of inversion symmetry leads to significant spin splitting, which is described by the Dresselhaus term, at both the conduction- and valence-band edges. The magnetic Eu2+ ions present in the structure, which do not play a role in gap formation, order antiferromagnetically at 2.5 K.

Co-reporter:Jino Im; Constantinos C. Stoumpos; Hosub Jin; Arthur J. Freeman
The Journal of Physical Chemistry Letters 2015 Volume 6(Issue 17) pp:3503-3509
Publication Date(Web):August 17, 2015
DOI:10.1021/acs.jpclett.5b01738
Halide perovskite solar cells are a recent ground-breaking development achieving power conversion efficiencies exceeding 18%. This has become possible owing to the remarkable properties of the AMX3 perovskites, which exhibit unique semiconducting properties. The most efficient solar cells utilize the CH3NH3PbI3 perovskite whose band gap, Eg, is 1.55 eV. Even higher efficiencies are anticipated, however, if the band gap of the perovskite can be pushed deeper in the near-infrared region, as in the case of CH3NH3SnI3 (Eg = 1.3 eV). A remarkable way to improve further comes from the CH3NH3Sn1–xPbxI3 solid solution, which displays an anomalous trend in the evolution of the band gap with the compositions approaching x = 0.5 displaying lower band gaps (Eg ≈ 1.1 eV) than that of the lowest of the end member, CH3NH3SnI3. Here we use first-principles calculations to show that the competition between the spin–orbit coupling (SOC) and the lattice distortion is responsible for the anomalous behavior of the band gap in CH3NH3Sn1–xPbxI3. SOC causes a linear reduction as x increases, while the lattice distortion causes a nonlinear increase due to a composition-induced phase transition near x = 0.5. Our results suggest that electronic structure engineering can have a crucial role in optimizing the photovoltaic performance.
Co-reporter:Li-Dong Zhao, Vinayak P. Dravid and Mercouri G. Kanatzidis  
Energy & Environmental Science 2014 vol. 7(Issue 1) pp:251-268
Publication Date(Web):15 Nov 2013
DOI:10.1039/C3EE43099E
This review discusses recent developments and current research in high performance bulk thermoelectric materials, comprising nanostructuring, mesostructuring, band alignment, band engineering and synergistically defining key strategies for boosting the thermoelectric performance. To date, the dramatic enhancements in the figure of merit achieved in bulk thermoelectric materials have come either from the reduction in lattice thermal conductivity or improvement in power factors, or both of them. Here, we summarize these relationships between very large reduction of the lattice thermal conductivity with all-scale hierarchical architecturing, large enhanced Seebeck coefficients with intra-matrix electronic structure engineering, and control of the carrier mobility with matrix/inclusion band alignment, which enhance the power factor and reduce the lattice thermal conductivity. The new concept of hierarchical compositionally alloyed nanostructures to achieve these effects is presented. Systems based on PbTe, PbSe and PbS in which spectacular advances have been demonstrated are given particular emphasis. A discussion of future possible strategies is aimed at enhancing the thermoelectric figure of merit of these materials.
Co-reporter:Di Wu ; Li-Dong Zhao ; Shiqiang Hao ; Qike Jiang ; Fengshan Zheng ; Jeff W. Doak ; Haijun Wu ; Hang Chi ; Y. Gelbstein ; C. Uher ; C. Wolverton ; Mercouri Kanatzidis ;Jiaqing He
Journal of the American Chemical Society 2014 Volume 136(Issue 32) pp:11412-11419
Publication Date(Web):July 29, 2014
DOI:10.1021/ja504896a
As a lead-free material, GeTe has drawn growing attention in thermoelectrics, and a figure of merit (ZT) close to unity was previously obtained via traditional doping/alloying, largely through hole carrier concentration tuning. In this report, we show that a remarkably high ZT of ∼1.9 can be achieved at 773 K in Ge0.87Pb0.13Te upon the introduction of 3 mol % Bi2Te3. Bismuth telluride promotes the solubility of PbTe in the GeTe matrix, thus leading to a significantly reduced thermal conductivity. At the same time, it enhances the thermopower by activating a much higher fraction of charge transport from the highly degenerate Σ valence band, as evidenced by density functional theory calculations. These mechanisms are incorporated and discussed in a three-band (L + Σ + C) model and are found to explain the experimental results well. Analysis of the detailed microstructure (including rhombohedral twin structures) in Ge0.87Pb0.13Te + 3 mol % Bi2Te3 was carried out using transmission electron microscopy and crystallographic group theory. The complex microstructure explains the reduced lattice thermal conductivity and electrical conductivity as well.
Co-reporter:Lei Fang ; Ratnasabapathy G. Iyer ; Gangjian Tan ; Damien J. West ; Shengbai Zhang
Journal of the American Chemical Society 2014 Volume 136(Issue 31) pp:11079-11084
Publication Date(Web):July 24, 2014
DOI:10.1021/ja505301y
We report on a new layered semiconductor Tl8Sn10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb6Se10] layer that energetically impedes electron propagation.
Co-reporter:Feng Hao ; Constantinos C. Stoumpos ; Robert P. H. Chang
Journal of the American Chemical Society 2014 Volume 136(Issue 22) pp:8094-8099
Publication Date(Web):May 13, 2014
DOI:10.1021/ja5033259
Perovskite-based solar cells have recently been catapulted to the cutting edge of thin-film photovoltaic research and development because of their promise for high-power conversion efficiencies and ease of fabrication. Two types of generic perovskites compounds have been used in cell fabrication: either Pb- or Sn-based. Here, we describe the performance of perovskite solar cells based on alloyed perovskite solid solutions of methylammonium tin iodide and its lead analogue (CH3NH3Sn1–xPbxI3). We exploit the fact that, the energy band gaps of the mixed Pb/Sn compounds do not follow a linear trend (the Vegard’s law) in between these two extremes of 1.55 and 1.35 eV, respectively, but have narrower bandgap (<1.3 eV), thus extending the light absorption into the near-infrared (∼1,050 nm). A series of solution-processed solid-state photovoltaic devices using a mixture of organic spiro-OMeTAD/lithium bis(trifluoromethylsulfonyl)imide/pyridinium additives as hole transport layer were fabricated and studied as a function of Sn to Pb ratio. Our results show that CH3NH3Sn0.5Pb0.5I3 has the broadest light absorption and highest short-circuit photocurrent density ∼20 mA cm–2 (obtained under simulated full sunlight of 100 mW cm–2).
Co-reporter:Gangjian Tan ; Li-Dong Zhao ; Fengyuan Shi ; Jeff W. Doak ; Shih-Han Lo ; Hui Sun ; Chris Wolverton ; Vinayak P. Dravid ; Ctirad Uher
Journal of the American Chemical Society 2014 Volume 136(Issue 19) pp:7006-7017
Publication Date(Web):May 2, 2014
DOI:10.1021/ja500860m
SnTe is a potentially attractive thermoelectric because it is the lead-free rock-salt analogue of PbTe. However, SnTe is a poor thermoelectric material because of its high hole concentration arising from inherent Sn vacancies in the lattice and its very high electrical and thermal conductivity. In this study, we demonstrate that SnTe-based materials can be controlled to become excellent thermoelectrics for power generation via the successful application of several key concepts that obviate the well-known disadvantages of SnTe. First, we show that Sn self-compensation can effectively reduce the Sn vacancies and decrease the hole carrier density. For example, a 3 mol % self-compensation of Sn results in a 50% improvement in the figure of merit ZT. In addition, we reveal that Cd, nominally isoelectronic with Sn, favorably impacts the electronic band structure by (a) diminishing the energy separation between the light-hole and heavy-hole valence bands in the material, leading to an enhanced Seebeck coefficient, and (b) enlarging the energy band gap. Thus, alloying with Cd atoms enables a form of valence band engineering that improves the high-temperature thermoelectric performance, where p-type samples of SnCd0.03Te exhibit ZT values of ∼0.96 at 823 K, a 60% improvement over the Cd-free sample. Finally, we introduce endotaxial CdS or ZnS nanoscale precipitates that reduce the lattice thermal conductivity of SnCd0.03Te with no effect on the power factor. We report that SnCd0.03Te that are endotaxially nanostructured with CdS and ZnS have a maximum ZTs of ∼1.3 and ∼1.1 at 873 K, respectively. Therefore, SnTe-based materials could be ideal alternatives for p-type lead chalcogenides for high temperature thermoelectric power generation.
Co-reporter:Yurina Shim ; Ryan M. Young ; Alexios P. Douvalis ; Scott M. Dyar ; Benjamin D. Yuhas ; Thomas Bakas ; Michael R. Wasielewski
Journal of the American Chemical Society 2014 Volume 136(Issue 38) pp:13371-13380
Publication Date(Web):August 27, 2014
DOI:10.1021/ja507297p
Naturally abundant enzymes often feature active sites comprising transition metal cluster units that catalyze chemical processes and reduce small molecules as well as protons. We introduce a family of new chalcogenide aerogels (chalcogels), aiming to model the function of active sites and the structural features of a larger protective framework. New metal incorporated iron sulfur tin sulfide chalcogels referred to as ternary chalcogels and specifically the chalcogels M-ITS-cg3, fully integrate biological redox-active Fe4S4 clusters into a semiconducting porous framework by bridging them with Sn4S10 linking units. In the M-ITS-cg3 system we can tailor the electro- and photocatalytic properties of chalcogels through the control of spatial distance of redox-active Fe4S4 centers using additional linking metal ions, M2+ (Pt, Zn, Co, Ni, Sn). The presence of a third metal does not change the structural properties of the biomimetic chalcogels but modifies and even enhances their functional performance. M-ITS-cg3s exhibit electrocatalytic activity in proton reduction that arises from the Fe4S4 clusters but is tuned inductively by M2+. The metal ions alter the reduction potential of Fe4S4 in a favorable manner for photochemical hydrogen production. The Pt incorporated ITS-cg3 shows the greatest improvement in the overall hydrogen yield compared to the binary ITS-cg3. The ability to manipulate the properties of biomimetic chalcogels through synthetic control of the composition, while retaining both structural and functional properties, illustrates the chalcogels’ flexibility and potential in carrying out useful electrochemical and photochemical reactions.
Co-reporter:Byunghong Lee ; Constantinos C. Stoumpos ; Nanjia Zhou ; Feng Hao ; Christos Malliakas ; Chen-Yu Yeh ; Tobin J. Marks ; Mercouri G. Kanatzidis ;Robert P. H. Chang
Journal of the American Chemical Society 2014 Volume 136(Issue 43) pp:15379-15385
Publication Date(Web):October 9, 2014
DOI:10.1021/ja508464w
We introduce a new class of molecular iodosalt compounds for application in next-generation solar cells. Unlike tin-based perovskite compounds CsSnI3 and CH3NH3SnI3, which have Sn in the 2+ oxidation state and must be handled in an inert atmosphere when fabricating solar cells, the Sn in the molecular iodosalt compounds is in the 4+ oxidation state, making them stable in air and moisture. As an example, we demonstrate that, using Cs2SnI6 as a hole transporter, we can successfully fabricate in air a solid-state dye-sensitized solar cell (DSSC) with a mesoporous TiO2 film. Doping Cs2SnI6 with additives helps to reduce the internal device resistance, improving cell efficiency. In this way, a Z907 DSSC delivers 4.7% of energy conversion efficiency. By using a more efficient mixture of porphyrin dyes, an efficiency near 8% with photon confinement has been achieved. This represents a significant step toward the realization of low-cost, stable, lead-free, and environmentally benign next-generation solid-state solar cells.
Co-reporter:Feng Hao ; Constantinos C. Stoumpos ; Zhao Liu ; Robert P. H. Chang
Journal of the American Chemical Society 2014 Volume 136(Issue 46) pp:16411-16419
Publication Date(Web):November 6, 2014
DOI:10.1021/ja509245x
Depositing a pinhole-free perovskite film is of paramount importance to achieve high performance perovskite solar cells, especially in a heterojunction device format that is free of hole transport material (HTM). Here, we report that high-quality pinhole-free CH3NH3PbI3 perovskite film can be controllably deposited via a facile low-temperature (<150 °C) gas–solid crystallization process. The crystallite formation process was compared with respect to the conventional solution approach, in which the needle-shaped solvation intermediates (CH3NH3PbI3·DMF and CH3NH3PbI3·H2O) have been recognized as the main cause for the incomplete coverage of the resultant film. By avoiding these intermediates, the films crystallized at the gas–solid interface offer several beneficial features for device performance including high surface coverage, small surface roughness, as well as controllable grain size. Highly efficient HTM-free perovskite solar cells were constructed with these pinhole-free CH3NH3PbI3 films, exhibiting significant enhancement of the light harvesting in the long wavelength regime with respect to the conventional solution processed one. Overall, the gas–solid method yields devices with an impressive power conversion efficiency of 10.6% with high reproducibility displaying a negligible deviation of 0.1% for a total of 30 cells.
Co-reporter:Rachel J. Korkosz ; Thomas C. Chasapis ; Shih-han Lo ; Jeff W. Doak ; Yoon Jun Kim ; Chun-I Wu ; Euripidis Hatzikraniotis ; Timothy P. Hogan ; David N. Seidman ; Chris Wolverton ; Vinayak P. Dravid
Journal of the American Chemical Society 2014 Volume 136(Issue 8) pp:3225-3237
Publication Date(Web):February 17, 2014
DOI:10.1021/ja4121583
Lead chalcogenide thermoelectric systems have been shown to reach record high figure of merit values via modification of the band structure to increase the power factor or via nanostructuring to reduce the thermal conductivity. Recently, (PbTe)1–x(PbSe)x was reported to reach high power factors via a delayed onset of interband crossing. Conversely, the (PbTe)1–x(PbS)x was reported to achieve low thermal conductivities arising from extensive nanostructuring. Here we report the thermoelectric properties of the pseudoternary 2% Na-doped (PbTe)1–2x(PbSe)x(PbS)x system. The (PbTe)1–2x(PbSe)x(PbS)x system is an excellent platform to study phase competition between entropically driven atomic mixing (solid solution behavior) and enthalpy-driven phase separation. We observe that the thermoelectric properties of the PbTe–PbSe–PbS 2% Na doped are superior to those of 2% Na-doped PbTe–PbSe and PbTe–PbS, respectively, achieving a ZT ≈2.0 at 800 K. The material exhibits an increased the power factor by virtue of valence band modification combined with a very reduced lattice thermal conductivity deriving from alloy scattering and point defects. The presence of sulfide ions in the rock-salt structure alters the band structure and creates a plateau in the electrical conductivity and thermopower from 600 to 800 K giving a power factor of 27 μW/cmK2. The very low total thermal conductivity values of 1.1 W/m·K of the x = 0.07 composition is accounted for essentially by phonon scattering from solid solution defects rather than the assistance of endotaxial nanostructures.
Co-reporter:Shulan Ma, Saiful M. Islam, Yurina Shim, Qingyang Gu, Pengli Wang, Hao Li, Genban Sun, Xiaojing Yang, and Mercouri G. Kanatzidis
Chemistry of Materials 2014 Volume 26(Issue 24) pp:7114
Publication Date(Web):November 24, 2014
DOI:10.1021/cm5036997
We demonstrate strong iodine (I2) vapor adsorption using Mg/Al layered double hydroxide (MgAl-LDH) nanocomposites intercalated with polysulfide (Sx2–) groups (Sx-LDH, x = 2, 4, 6). The as-prepared LDH/polysulfide hybrid materials display highly efficient iodine capture resulting from the reducing property of the intercalated polysulfides. During adsorption, the I2 molecules are reduced to I3– anions by the intercalated [Sx]2– groups that simultaneously are oxidized to form S8. In addition to the chemical adsorption, additional molecular I2 is physically captured by the LDH composites. As a result of these parallel processes, and despite their very low BET surface areas, the iodine capture capacities of S2-LDH, S4-LDH, and S6-LDH are ∼1.32, 1.52, and 1.43 g/g, respectively, with a maximum adsorption of 152% (wt %). Thermogravimetric and differential thermal analysis (TG-DTA), energy dispersive X-ray spectroscopy (EDS), and temperature-variable powder X-ray diffraction (XRD) measurements show the resulting I3– ions that intercalated into the LDH gallery have high thermal stability (≥350 °C). The excellent iodine adsorption performance combined with the facile preparation points to the Sx-LDH systems as potential superior materials for adsorption of radioactive iodine, a waste product of the nuclear power industry.
Co-reporter:Nicholas P. Calta, Melanie C. Francisco, Christos D. Malliakas, John A. Schlueter, and Mercouri G. Kanatzidis
Chemistry of Materials 2014 Volume 26(Issue 23) pp:6827
Publication Date(Web):November 6, 2014
DOI:10.1021/cm503466a
We report the synthesis and characterization of four new ferromagnetic compounds discovered using Sn flux: Hf1.823(16)Fe5Sn3.815(14), HfFe2–xSnx, and two polymorphs of Hf1–xFe2Snx. All are closely related to HfFe2 Laves phase parent structures. HfFe2–xSnx (x ≈ 0.3–0.4) adopts the MgZn2-type (C14) crystal structure, whereas Hf1–xFe2Snx (x ≈ 0.1–0.4) adopts both the MgCu2-type (C15), and MgNi2-type (C36) structures. They crystallize in P63/mmc, Fd3̅m, and P63/mmc, respectively, with measured unit-cell parameters of a = 4.9238(7) Å and c = 7.9643(12) Å; a = 7.068(2) Å; and a = 4.9944(4) Å and c = 16.2604(15) Å, although phase width leads to a range of unit cell edge lengths. Hf1.823(16)Fe5Sn3.815(14) adopts a more complicated, incommensurately modulated structure in the superspace group Xmmm(00γ)000 with an orthorhombic subcell a = 9.7034(12) Å, b = 16.823(2) Å, and c = 8.4473(10) Å, three centering vectors of (1/2 0 0 1/2), (0 1/2 0 1/2), and (1/2 1/2 0 0), and a single-component modulation vector q = 0.2768(8)c*. The structure is composed of alternating slabs of the Fe-bonded Kagomé nets observed in the HfFe2 parent structures alternated with Sn-rich Th2Zn17-type slabs, with Hf atoms primarily occurring at the interfaces between the slabs. All four compounds are ferromagnetic metals at room temperature, with Curie temperatures ranging from 467(2) to 658(2) K. Their coercive fields are remarkably low, between 2(1) and 15(2) Oe. Interestingly, in two of three cases the addition of nonmagnetic Sn atoms in place of magnetic Hf or Fe atoms in the HfFe2 structure seems to strengthen rather than weaken magnetic coupling and increase TC. Fits to electrical resistivity data for the compound suggest that electron scattering in the Laves phase polymorphs shows substantial contributions from electron–magnon and/or electron–electron scattering, while the electrical behavior of Hf1.823(16)Fe5Sn3.815(14) is dominated by electron–phonon scattering, as is the case in most metals.
Co-reporter:Shulan Ma, Yurina Shim, Saiful M. Islam, K. S. Subrahmanyam, Pengli Wang, Hao Li, Shichao Wang, Xiaojing Yang, and Mercouri G. Kanatzidis
Chemistry of Materials 2014 Volume 26(Issue 17) pp:5004
Publication Date(Web):August 20, 2014
DOI:10.1021/cm5020477
We report detailed studies showing that the novel layered polysulfide compounds Sx-LDH (Sx2–, polysulfides, x = 2, 4, 5; LDH, Mg–Al layered double hydroxides) can capture efficiently large quantities of mercury (Hg0) vapor. During the adsorption process, the interlayer polysulfides [Sx]2– react with Hg0 through their S–S bond to produce HgS. The structure of Sx-LDH before and after Hg-adsorption was characterized with X-ray diffraction, vibration spectroscopy, and scanning electron microscopy. The presence of adsorbed Hg was verified by weight gain, inductively coupled plasma atomic emission spectroscopy and X-ray photoelectron spectroscopy. Despite their relatively low surface areas, the S2-LDH, S4-LDH, and S5-LDH samples show excellent Hg capture capacities of 4.9 × 105, 7.4 × 105, and 1.0 × 106 μg/g, respectively, corresponding to 50–100% adsorption rates by weight, highlighting the potential of these materials in natural gas purification. The Hg-capture efficiency and mechanism in Sx-LDH are supported by control experiments with K2S4, S8, LDH-NO3-CoS4, and MgAl-NO3-LDH.
Co-reporter:Saiful M. Islam, Kota S. Subrahmanyam, Christos D. Malliakas, and Mercouri G. Kanatzidis
Chemistry of Materials 2014 Volume 26(Issue 17) pp:5151
Publication Date(Web):August 18, 2014
DOI:10.1021/cm5024579
New molybdenum thiochlorides, α-MoSCl3 and β-MoSCl3, have been synthesized by chemical vapor transport. A selenium analog, MoSeCl3, could also be prepared in the same way. The crystal structures consist of infinite chains stabilized by weak van der Waals forces. For the α-phase an infinite chain of ∞1[Mo2(S2)Cl4Cl4/2] runs along the crystallographic c axis, while for the β-phase ∞1[Mo2(S2)Cl3Cl6/2] chain passes through the b-axis. MoSeCl3 is isostructural to α-MoSCl3. The formal charge on molybdenum in these thiochlorides have been assigned by X-ray photoelectron spectroscopy (XPS) to be +IV. β-MoSCl3 and already known Mo3S7Cl4 and MoS2Cl3 are weakly paramagnetic. Thermal decomposition of molybdenum thiochlorides leads to MoS2. Red MoS2Cl3 and Mo3S7Cl4 exhibit band gaps of ∼2.07 and ∼2.11 eV, while black α-MoSCl3, β-MoSCl3, and MoSeCl3 exhibit band gaps of ∼1.2, 1.24, and 1.18 eV, respectively. The new thiochlorides can serve as precursors in the synthesis of molybdenum–sulfide gels and aerogels. The MoSx chalcogels have a BET surface area of 353 m2/g and a band gap of 1.5 eV.
Co-reporter:In Chung and Mercouri G. Kanatzidis
Chemistry of Materials 2014 Volume 26(Issue 1) pp:849
Publication Date(Web):August 9, 2013
DOI:10.1021/cm401737s
Materials chemistry and the pursuit of new compounds through exploratory synthesis are having a strong impact in many technological fields. The field of nonlinear optics is directly impacted by the availability of enabling materials with high performance. Nonlinear optical (NLO) phenomena such as second harmonic and difference frequency generation (SHG and DFG, respectively) are effective at producing a coherent laser beam in difficult to reach frequency regions of the electromagnetic spectrum. Such regions include the infrared (IR), far-infrared, and terahertz frequencies. High performance NLO crystals are critical for applications utilizing these coherent light sources, and new materials are continuously sought for better conversion efficiency and performance. The class of metal chalcogenides is the most promising source of potential NLO materials with desirable properties particularly in the IR region where most classes of materials face various fundamental challenges. We review the recent developments in the discovery of several new high-performing chalcogenide NLO materials for the IR region of the spectrum. Among these, KPSe6, NaAsSe2, and Na2Ge2Se5 have been shown to exhibit some of the highest SHG coefficients (χ(2)) reported, namely, 150, 325, and 290 pm/V, respectively. We focus on their structural characteristics, optical transparency, and nonlinear optical properties. We also discuss a new concept to prepare strong NLO bulk glasses, fibers, and thin films without poling, which would be a promising solution to a main challenge in NLO applications. The impact of cutting-edge theoretical calculations in helping to move this field of materials science and chemistry forward is highlighted.Keywords: materials genome; second harmonic generation; synthesis;
Co-reporter:Qing Tan, Li-Dong Zhao, Jing-Feng Li, Chao-Feng Wu, Tian-Ran Wei, Zhi-Bo Xing and Mercouri G. Kanatzidis  
Journal of Materials Chemistry A 2014 vol. 2(Issue 41) pp:17302-17306
Publication Date(Web):08 Sep 2014
DOI:10.1039/C4TA04462B
The thermoelectric properties of Ag-doped SnS samples synthesized by mechanical alloying followed by spark plasma sintering were studied. We report that SnS possesses a high Seebeck coefficient of >+400 μV K−1 and Ag doping increases the carrier concentration by more than four orders of magnitude giving significantly improving electrical conductivity. The thermal conductivity falls below 0.5 W m−1 K−1 at 873 K and leads to a high ZT of 0.6. The data indicate that earth-abundant and environmentally friendly SnS is a promising candidate for thermoelectric applications despite its relatively wide bandgap of 1.2 eV.
Co-reporter:Shulan Ma, Qingmei Chen, Hao Li, Pengli Wang, Saiful M. Islam, Qingyang Gu, Xiaojing Yang and Mercouri G. Kanatzidis  
Journal of Materials Chemistry A 2014 vol. 2(Issue 26) pp:10280-10289
Publication Date(Web):15 Apr 2014
DOI:10.1039/C4TA01203H
Polysulfide [Sx]2− (x = 2, 4) species were intercalated into magnesium–aluminium layered double hydroxide (MgAl–LDH) by a [Sx]2−/NO3− anion-exchange reaction. The resulting Sx–LDH materials exhibit excellent affinity and selectivity for heavy metal ions such as Cu2+, Ag+ and Hg2+. For the highly toxic Hg2+, the distribution coefficient Kd values can reach ∼107 mL g−1. The Sx–LDH materials rapidly reduce the concentrations of Hg2+ and Ag+ ions in testing solutions from ppm levels to trace levels of ≤1 ppb. A larger series of metal ions were investigated and the selectivity order of Ni2+, Co2+ ≪ Zn2+, Pb2+ < Cd2+ < Cu2+, Ag+, Hg2+ was observed. The Sx–LDH materials show higher selectivity for Cu2+/Zn2 compared to Co2+/Ni2+, providing good separation for these transition metal ions. After ion capture, the LDH hybrid materials retained the original hexagonal prismatic shape and showed good stability under acidic conditions (pH ∼ 3). The adsorption process of the metals occurs via M–S bonding. The enhanced environmental stability of the [Sx]2− groups provided by the LDH protective space, the confinement effect offered by the LDH layers, along with the easy accessibility of polysulfide ions to metal ions enable high capture ability and excellent selectivity. The Sx–LDH materials are thus promising as superior sorbents for the decontamination of polluted water.
Co-reporter:Michihiro Ohta, Duck Young Chung, Masaru Kunii and Mercouri G. Kanatzidis  
Journal of Materials Chemistry A 2014 vol. 2(Issue 47) pp:20048-20058
Publication Date(Web):03 Oct 2014
DOI:10.1039/C4TA05135A
The thermoelectric properties of Pb5Bi6Se14, a member of the cannizzarite homologous series; Pb3Bi2S6, a member of the lillianite homologous series; and PbBi2S4, a member of the galenobismuthite homologous series were investigated over the temperature range of 300 K to 723 K. The samples were synthesized by a solid state reaction of the binary precursors PbQ and Bi2Q3 (Q = S and Se) in evacuated and sealed quartz tubes, followed by pulsed electric current sintering. The crystal structure of Pb5Bi6Se14 consists of alternating two-dimensional infinite layers of PbSe and Bi2Se3. In the Pb5Bi6Se14 sintered compacts, the ab-plane was preferentially oriented perpendicular to the pressing direction, resulting in highly anisotropic electrical and thermal transport properties. The crystal structure of Pb3Bi2S6 is formed by stacking NaCl-type (Pb/Bi)S layers with a mirror as twinning operation, while that of PbBi2S4 consists of the NaCl-type and Bi2S3-type strips (broken layers) of finite widths. The crystal grains of Pb3Bi2S6 and PbBi2S4 were grown randomly, leading to nearly isotropic electrical and thermal transport properties in the sintered compacts. For all the samples, an n-type degenerate semiconductor-like behavior was found, providing a notable thermoelectric power factor of ∼3.0 μW K−2 cm−1 at 705 K for Pb5Bi6Se14, ∼2.4 μW K−2 cm−1 at 715 K for Pb3Bi2S6, and ∼2.6 μW K−2 cm−1 at 515 K for PbBi2S4 in a direction perpendicular to the pressing direction. Moreover, these materials exhibited effective phonon scattering, presumably at the interfaces between the layers, leading to extremely low lattice thermal conductivity in the range of 0.29 W K−1 m−1 to 0.80 W K−1 m−1 over the temperature range of 300 K to 723 K. The highest ZT of ∼0.46 at 705 K was observed in Pb5Bi6Se14 for the ab-plane direction.
Co-reporter:Gangjian Tan, Fengyuan Shi, Hui Sun, Li-Dong Zhao, Ctirad Uher, Vinayak P. Dravid and Mercouri G. Kanatzidis  
Journal of Materials Chemistry A 2014 vol. 2(Issue 48) pp:20849-20854
Publication Date(Web):10 Nov 2014
DOI:10.1039/C4TA05530F
SnTe is an intriguing alternative to its sister compound PbTe in thermoelectric energy conversion because of their electronic and structural similarity; however, it is challenging to optimize its thermoelectric performance to the level of PbTe because of the difficulties in decreasing its intrinsically large hole population and high thermal conductivity arising from the tin vacancies. We demonstrate here that by alloying some AgBiTe2 in SnTe, thus forming AgSnxBiTex+2 compositions the hole concentration can be duly decreased because of the high efficiency of Bi as an electron donor. The lattice thermal conductivity is also decreased due to the strong scattering of phonons (by point defect scattering as well as Ag-rich nanostructures) to achieve a value of ∼0.7 W m−1 K−1 at ∼750 K. As a result, a high thermoelectric figure ZT of merit of ∼1.1 at 775 K is achieved by chemical composition optimization (×∼15), making lead free SnTe–AgBiTe2 a promising thermoelectric material.
Co-reporter:Saiful M. Islam, Jino Im, Arthur J. Freeman, and Mercouri G. Kanatzidis
Inorganic Chemistry 2014 Volume 53(Issue 9) pp:4698-4704
Publication Date(Web):April 10, 2014
DOI:10.1021/ic500388s
Ba2HgS5 was synthesized by cooling a molten mixture of BaS, HgS, and elemental sulfur. It crystallizes in the orthorhombic Pnma space group with a = 12.190(2) Å, b = 8.677(2) Å, c = 8.371(2) Å, and dcalc = 4.77 g cm–3. Its crystal structure consists of isolated dumbbell-shaped (HgS2)2– and v-shaped S32– ions. These molecular anions are charge-balanced by Ba2+ cations. Raman spectroscopy shows three strong bands originating from symmetric, asymmetric, and bending vibrational modes of the S32– ions. X-ray photoelectron spectroscopic analysis confirms the presence of the trisulfide species. Ba2HgS5 has a bandgap of ∼2.4 eV. Electronic band structure calculations show that the bandgap is defined essentially by the p-orbitals of the sulfur atoms of the S32– group.
Co-reporter:Mihai Sturza, Christos D. Malliakas, Daniel E. Bugaris, Fei Han, Duck Young Chung, and Mercouri G. Kanatzidis
Inorganic Chemistry 2014 Volume 53(Issue 22) pp:12191-12198
Publication Date(Web):October 31, 2014
DOI:10.1021/ic502137m
A new ternary compound NaCu6Se4 was synthesized from the reaction of Cu in a molten sodium polyselenide flux. The compound crystallizes in trigonal space group R3̅m with a = 4.0465(3) Å and c = 41.493(5) Å. The crystal structure contains flat two-dimensional slabs of 1/∞[Cu6Se4] with a unique structural arrangement, separated by Na cations. The compound contains mixed valency and has a high conductivity of ∼3 × 103 S cm–1 at room temperature, and exhibits increasing conductivity with decreasing temperature, indicating metallic behavior. A small positive thermopower (4–11 μV K–1 from 300 to 500 K) and Hall effect measurements indicate p-type transport with a carrier concentration of ∼2.8(3) × 1021 cm–3 and a hole mobility of ∼8.75 cm2 V–1 s–1 at 300 K. NaCu6Se4 exhibits temperature-independent Pauli paramagnetism.
Co-reporter:Daniel E. Bugaris, Christos D. Malliakas, Daniel P. Shoemaker, Dat T. Do, Duck Young Chung, Subhendra D. Mahanti, and Mercouri G. Kanatzidis
Inorganic Chemistry 2014 Volume 53(Issue 18) pp:9959-9968
Publication Date(Web):August 27, 2014
DOI:10.1021/ic501733z
Using metal fluxes, crystals of the binary osmium dipnictides OsPn2 (Pn = P, As, Sb) have been grown for the first time. Single-crystal X-ray diffraction confirms that these compounds crystallize in the marcasite structure type with orthorhombic space group Pnnm. The structure is a three-dimensional framework of corner- and edge-sharing OsPn6 octahedra, as well as [Pn24–] anions. Raman spectroscopy shows the presence of P–P single bonds, consistent with the presence of [Pn2–4] anions and formally Os4+ cations. Optical-band-gap and high-temperature electrical resistivity measurements indicate that these materials are narrow-band-gap semiconductors. The experimentally determined Seebeck coefficients reveal that nominally undoped OsP2 and OsSb2 are n-type semiconductors, whereas OsAs2 is p-type. Electronic band structure using density functional theory calculations shows that these compounds are indirect narrow-band-gap semiconductors. The bonding p orbitals associated with the Pn2 dimer are below the Fermi energy, and the corresponding antibonding states are above, consistent with a Pn–Pn single bond. Thermopower calculations using Boltzmann transport theory and constant relaxation time approximation show that these materials are potentially good thermoelectrics, in agreement with experiment.
Co-reporter:Sebastian C. Peter, Udumula Subbarao, Sudhindra Rayaprol, Joshua B. Martin, Mahalingam Balasubramanian, Christos D. Malliakas, and Mercouri G. Kanatzidis
Inorganic Chemistry 2014 Volume 53(Issue 13) pp:6615-6623
Publication Date(Web):June 12, 2014
DOI:10.1021/ic500204t
The compound Yb6.6Ir6Sn16 was obtained as single crystals in high yield from the reaction of Yb with Ir and Sn run in excess indium. Single-crystal X-ray diffraction analysis shows that Yb6.6Ir6Sn16 crystallizes in the tetragonal space group P42/nmc with a = b = 9.7105(7) Å and c = 13.7183(11) Å. The crystal structure is composed of a [Ir6Sn16] polyanionic network with cages in which the Yb atoms are embedded. The Yb sublattice features extensive vacancies on one crystallographic site. Magnetic susceptibility measurements on single crystals indicate Curie–Weiss law behavior <100 K with no magnetic ordering down to 2 K. The magnetic moment within the linear region (<100 K) is 3.21 μB/Yb, which is ∼70% of the expected value for a free Yb3+ ion suggesting the presence of mixed-valent ytterbium atoms. X-ray absorption near edge spectroscopy confirms that Yb6.6Ir6Sn16 exhibits mixed valence. Resistivity and heat capacity measurements for Yb6.6Ir6Sn16 indicate non-Fermi liquid metallic behavior.
Co-reporter:Hao Li, Christos D. Malliakas, Zhifu Liu, John A. Peters, Maria Sebastian, Lidong Zhao, Duck Young Chung, Bruce W. Wessels, and Mercouri G. Kanatzidis
Crystal Growth & Design 2014 Volume 14(Issue 11) pp:5949-5956
Publication Date(Web):September 23, 2014
DOI:10.1021/cg501151r
A new method is described to synthesize the semiconductor Cs2Hg6S7 and its alloy with Cd. Using the as-synthesized material, large single crystals have been grown by the Bridgman method under an improved set of crystal growth parameters. In addition, Cd alloying in the form of Cs2Hg6–xCdxS7 (x = 0.25, 0.5, 0.75, etc.) as well as doping with In, Cl was investigated and the influence on the electronic properties was studied. Cd alloying increases the band gap of Cs2Hg6S7 from 1.63 to 1.84 eV. Doping with In and Cl however creates electron carriers and changes p-type samples of Cs2Hg6S7 into n type. A 30-fold increase in the resistivity of the single crystals from 2 × 106 to 0.65 × 108 Ω cm has been achieved. The carrier mobility-lifetime product of the Cs2Hg6S7 crystals has been increased to 1.7 × 10–3 cm2/V for electrons (μτ)e and 2.4 × 10–3 cm2/V for holes (μτ)h (HgCl2 doped). The measured (μτ)e value is comparable to the commercial CdZnTe crystal while the (μτ)h is 10 times higher. Detection of Ag X-ray radiation is demonstrated using the as-grown Cs2Hg6S7 crystals.
Co-reporter:Shichao Wang, Zhifu Liu, John A. Peters, Maria Sebastian, Sandy L. Nguyen, Christos D. Malliakas, Constantinos C. Stoumpos, Jino Im, Arthur J. Freeman, Bruce W. Wessels, and Mercouri G. Kanatzidis
Crystal Growth & Design 2014 Volume 14(Issue 5) pp:2401-2410
Publication Date(Web):March 20, 2014
DOI:10.1021/cg5001446
We report the synthesis, physical characterization, and crystal growth of Tl4CdI6. We show that this material has good photoconductivity and is a promising semiconductor for room temperature X-ray and γ-ray detection. Large single crystals were grown by the vertical Bridgman method and cut to dimensions appropriate for detector testing. Single crystal X-ray diffraction refinements confirm that Tl4CdI6 crystallizes in the tetragonal crystal system with a centrosymmetric space group of P4/mnc, with a calculated density of 6.87 g/cm3. Thermal analysis and high-temperature synchrotron powder diffraction studies were used to determine phase relationships and crystallization behavior during crystal growth. We have elucidated the reason for different colors encountered when synthesizing or growing single crystals of Tl4CdI6 (yellow, red, and black), and it is the presence of a small amount of TlI impurity. We report proper crystal growth conditions to obtain essentially pure yellow Tl4CdI6 crystals. The material having the yellow color has a band gap of 2.8 eV. First-principles density functional theory calculations indicate a direct band gap at the Γ point of the Brillouin zone. The Tl4CdI6 crystals have a resistivity of 1010 Ω·cm. Photoconductivity measurements on the as-grown crystals show mobility-lifetime product on the order of 10–4 cm2/V for both electrons and holes. The promising detector properties of this material are confirmed by preliminary measurements showing a clear spectral response to an Ag X-ray source, which classifies Tl4CdI6 as an emerging material for radiation detection.
Co-reporter:Daniel P. Shoemaker;Yung-Jin Hu;Duck Young Chung;Gregory J. Halder;L. Soderholm;Peter J. Chupas;J. F. Mitchell
PNAS 2014 Volume 111 (Issue 30 ) pp:10922-10927
Publication Date(Web):2014-07-29
DOI:10.1073/pnas.1406211111
Rapid shifts in the energy, technological, and environmental demands of materials science call for focused and efficient expansion of the library of functional inorganic compounds. To achieve the requisite efficiency, we need a materials discovery and optimization paradigm that can rapidly reveal all possible compounds for a given reaction and composition space. Here we provide such a paradigm via in situ X-ray diffraction measurements spanning solid, liquid flux, and recrystallization processes. We identify four new ternary sulfides from reactive salt fluxes in a matter of hours, simultaneously revealing routes for ex situ synthesis and crystal growth. Changing the flux chemistry, here accomplished by increasing sulfur content, permits comparison of the allowable crystalline building blocks in each reaction space. The speed and structural information inherent to this method of in situ synthesis provide an experimental complement to computational efforts to predict new compounds and uncover routes to targeted materials by design.
Co-reporter:Kyunghan Ahn, Kanishka Biswas, Jiaqing He, In Chung, Vinayak Dravid and Mercouri G. Kanatzidis  
Energy & Environmental Science 2013 vol. 6(Issue 5) pp:1529-1537
Publication Date(Web):18 Mar 2013
DOI:10.1039/C3EE40482J
We investigated the effect of Cd and Hg substitution on the thermoelectric properties of p-type PbTe–x% CdTe and PbTe–x% HgTe (1 ≤ x ≤ 5) doped with Na2Te. Both ingot samples and spark plasma sintered (SPS) samples were studied and the properties are compared. We present detailed structural, spectroscopic and transmission electron microscopy (TEM) data, and transport properties of both cast ingot and SPS samples. The SPS processed samples with HgTe as the second phase show better thermoelectric properties than those with CdTe mainly because of more effective phonon scattering. The SPS process gives significantly lower lattice thermal conductivity for the p-type PbTe–HgTe system than the cast ingot. The same effect is not observed in the p-type PbTe–CdTe system. A maximum ZT of ∼1.64 at ∼770 K is achieved for the p-type PbTe–2% HgTe–1% Na2Te SPS sample. TEM studies reveal the formation of nanostructures whose number density generally increases with increasing concentrations of CdTe and HgTe as the second phase. Meso-scale grain boundaries along with nanostructured precipitates in the SPS samples play an important role in significantly reducing the lattice thermal conductivity compared to cast ingot in the case of p-type PbTe–HgTe.
Co-reporter:L. D. Zhao, H. J. Wu, S. Q. Hao, C. I. Wu, X. Y. Zhou, K. Biswas, J. Q. He, T. P. Hogan, C. Uher, C. Wolverton, V. P. Dravid and M. G. Kanatzidis  
Energy & Environmental Science 2013 vol. 6(Issue 11) pp:3346-3355
Publication Date(Web):24 Sep 2013
DOI:10.1039/C3EE42187B
We report a high ZT of ∼2.0 at 823 K for 2% Na-doped PbTe with 6% MgTe with excellent thermal stability. We attribute the high thermoelectric performance to a synergistic combination of enhanced power factor, reduction of the lattice thermal conductivity and simultaneous suppression of bipolar thermal conductivity. MgTe inclusion in PbTe owns triple functions: the Mg alloying within the solubility limit in PbTe modifies the valence band structure by pushing the two valence bands (L and Σ bands) closer in energy, thereby facilitating charge carrier injection. When the solubility limit of Mg is exceeded, ubiquitous endotaxial nanostructures form, which when coupled with mesoscale microstructuring results in a very low (lattice) thermal conductivity through all-scaled length phonon scattering. Meanwhile, most significantly, the Mg alloying enlarges the energy gap of conduction band (C band) and light valence band (L band), thereby suppresses the bipolar thermal conductivity through an increase in band gap.
Co-reporter:Christos D. Malliakas ; Duck Young Chung ; Helmut Claus
Journal of the American Chemical Society 2013 Volume 135(Issue 39) pp:14540-14543
Publication Date(Web):September 12, 2013
DOI:10.1021/ja407530u
Superconductivity was discovered in the narrow-gap semiconductor CsBi4Te6. A superconducting transition around 4.4 K was observed for p-type samples in temperature-dependent resistivity and magnetic susceptibility data. Stoichiometric CsBi4Te6 is not a superconductor. A remarkably high critical field of ∼10 T was estimated from the field-dependent resistivity data. The strongly anisotropic CsBi4Te6 system is monoclinic and the first member of a larger homologous series Cs4[Bi2n+4Te3n+6] that exhibits unconventional superconductivity, suggesting that proper doping of the homologous series may create a novel class of superconductors from semiconductors.
Co-reporter:Li-Dong Zhao ; Shiqiang Hao ; Shih-Han Lo ; Chun-I Wu ; Xiaoyuan Zhou ; Yeseul Lee ; Hao Li ; Kanishka Biswas ; Timothy P. Hogan ; Ctirad Uher ; C. Wolverton ; Vinayak P. Dravid
Journal of the American Chemical Society 2013 Volume 135(Issue 19) pp:7364-7370
Publication Date(Web):May 6, 2013
DOI:10.1021/ja403134b
Previous efforts to enhance thermoelectric performance have primarily focused on reduction in lattice thermal conductivity caused by broad-based phonon scattering across multiple length scales. Herein, we demonstrate a design strategy which provides for simultaneous improvement of electrical and thermal properties of p-type PbSe and leads to ZT ∼ 1.6 at 923 K, the highest ever reported for a tellurium-free chalcogenide. Our strategy goes beyond the recent ideas of reducing thermal conductivity by adding two key new theory-guided concepts in engineering, both electronic structure and band alignment across nanostructure–matrix interface. Utilizing density functional theory for calculations of valence band energy levels of nanoscale precipitates of CdS, CdSe, ZnS, and ZnSe, we infer favorable valence band alignments between PbSe and compositionally alloyed nanostructures of CdS1–xSex/ZnS1–xSex. Then by alloying Cd on the cation sublattice of PbSe, we tailor the electronic structure of its two valence bands (light hole L and heavy hole Σ) to move closer in energy, thereby enabling the enhancement of the Seebeck coefficients and the power factor.
Co-reporter:Yurina Shim ; Benjamin D. Yuhas ; Scott M. Dyar ; Amanda L. Smeigh ; Alexios P. Douvalis ; Michael R. Wasielewski
Journal of the American Chemical Society 2013 Volume 135(Issue 6) pp:2330-2337
Publication Date(Web):January 31, 2013
DOI:10.1021/ja311310k
Biology sustains itself by converting solar energy in a series of reactions between light harvesting components, electron transfer pathways, and redox-active centers. As an artificial system mimicking such solar energy conversion, porous chalcogenide aerogels (chalcogels) encompass the above components into a common architecture. We present here the ability to tune the redox properties of chalcogel frameworks containing biological Fe4S4 clusters. We have investigated the effects of [SnnS2n+2]4– linking blocks ([SnS4]4–, [Sn2S6]4–, [Sn4S10]4–) on the electrochemical and electrocatalytic properties of the chalcogels, as well as on the photophysical properties of incorporated light-harvesting dyes, tris(2,2′-bipyridyl)ruthenium(II) (Ru(bpy)32+). The various thiostannate linking blocks do not alter significantly the chalcogel surface area (90–310 m2/g) or the local environment around the Fe4S4 clusters as indicated by 57Fe Mössbauer spectroscopy. However, the varying charge density of the linking blocks greatly affects the reduction potential of the Fe4S4 cluster and the electronic interaction between the clusters. We find that when the Fe4S4 clusters are bridged with the adamantane [Sn4S10]4– linking blocks, the electrochemical reduction of CS2 and the photochemical production of hydrogen are enhanced. The ability to tune the redox properties of biomimetic chalcogels presents a novel avenue to control the function of multifunctional chalcogels for a wide range of electrochemical or photochemical processes relevant to solar fuels.
Co-reporter:Yeseul Lee ; Shih-Han Lo ; John Androulakis ; Chun-I Wu ; Li-Dong Zhao ; Duck-Young Chung ; Timothy P. Hogan ; Vinayak P. Dravid
Journal of the American Chemical Society 2013 Volume 135(Issue 13) pp:5152-5160
Publication Date(Web):March 22, 2013
DOI:10.1021/ja400069s
We present a systematic study of the characterization and thermoelectric properties of nanostructured Na-doped PbSe embedded with 1–4% MSe (M = Ca, Sr, Ba) phases as endotaxial inclusions. The samples were powder-processed by the spark plasma sintering technique, which introduces mesoscale-structured grains. The hierarchical architectures on the atomic scale (Na and M solid solution), nanoscale (MSe nanoprecipitates), and mesoscale (grains) were confirmed by transmission electron microscopy. These structures produce a great reduction in the lattice thermal conductivity relative to pristine PbSe without appreciably affecting the power factor. The lattice thermal conductivity can be reduced by up to ∼29% when the second phase is added. The highest ZT value achieved was ∼1.3 at 923 K for both 2% SrSe-and 3% BaSe-containing samples, while the sample containing 4% CaSe showed a ZT value of ∼1.2 at 923 K. The optimal samples have hole carrier concentration of 1–2 × 1020 cm–3. We attribute the high ZT values to the combination of broad-based phonon scattering on multiple length scales and favorable charge transport through coherent interfaces between the PbSe matrix and MSe.
Co-reporter:Jiaqing He ; Li-Dong Zhao ; Jin-Cheng Zheng ; Jeff W. Doak ; Haijun Wu ; Hui-Qiong Wang ; Yeseul Lee ; Chris Wolverton ; Mercouri G. Kanatzidis ;Vinayak P. Dravid
Journal of the American Chemical Society 2013 Volume 135(Issue 12) pp:4624-4627
Publication Date(Web):February 27, 2013
DOI:10.1021/ja312562d
The solubility of sodium and its effects on phonon scattering in lead chalcogenide PbQ (Q = Te, Se, S) family of thermoelectric materials was investigated by means of transmission electron microscopy and density functional calculations. Among these three systems, Na has the highest solubility limit (∼2 mol %) in PbS and the lowest ∼0.5 mol %) in PbTe. First-principles electronic structure calculations support the observations, indicating that Na defects have the lowest formation energy in PbS and the highest in PbTe. It was also found that in addition to providing charge carriers (holes) for PbQ, Na introduces point defects (solid solution formation) and nanoscale precipitates; both reduce the lattice thermal conductivity by scattering heat-carrying phonons. These results explain the recent reports of high thermoelectric performance in p-type PbQ materials and may lead to further advances in this class of materials.
Co-reporter:Christos D. Malliakas
Journal of the American Chemical Society 2013 Volume 135(Issue 5) pp:1719-1722
Publication Date(Web):January 21, 2013
DOI:10.1021/ja3120554
2H-NbSe2 is a canonical Charge-Density-Wave (CDW) layered material the structural details of which remained elusive. We report the detailed structure of 2H-NbSe2 below the CDW transition using a (3 + 2)-dimensional crystallographic approach on single crystal X-ray diffraction data collected at 15 K. Intensities of main reflections as well as CDW satellites of first order were measured. Quantitative information about the magnitude of the structural distortions and clustering of Nb atoms were extracted from the refined model. The Nb–Nb distances were found to distort between 3.4102(8) and 3.4928(8) Å in the CDW phase from the average undistorted distance of 3.4583(4) Å.
Co-reporter:Steven N. Girard;Klaus Schmidt-Rohr;Thomas C. Chasapis;Euripides Hatzikraniotis;B. Njegic;E. M. Levin;A. Rawal;Konstantinos M. Paraskevopoulos
Advanced Functional Materials 2013 Volume 23( Issue 6) pp:747-757
Publication Date(Web):
DOI:10.1002/adfm.201201944

Abstract

Phase immiscibility in PbTe–based thermoelectric materials is an effective means of top-down synthesis of nanostructured composites exhibiting low lattice thermal conductivities. PbTe1-x Sx thermoelectric materials can be synthesized as metastable solid solution alloys through rapid quenching. Subsequent post-annealing induces phase separation at the nanometer scale, producing nanostructures that increase phonon scattering and reduce lattice thermal conductivity. However, there has yet to be any study investigating in detail the local chemical structure of both the solid solution and nanostructured variants of this material system. Herein, quenched and annealed (i.e., solid solution and phase-separated) samples of PbTe–PbS are analyzed by in situ high-resolution synchrotron powder X-ray diffraction, solid-state 125Te nuclear magnetic resonance (NMR), and infrared (IR) spectroscopy analysis. For high concentrations of PbS in PbTe, e.g., x >16%, NMR and IR analyses reveal that rapidly quenched samples exhibit incipient phase separation that is not detected by state-of-the-art synchrotron X-ray diffraction, providing an example of a PbTe thermoelectric “alloy” that is in fact phase inhomogeneous. Thermally-induced PbS phase separation in PbTe–PbS occurs close to 200 °C for all compositions studied, and the solubility of the PbS phase in PbTe at elevated temperatures >500 °C is reported. The findings of this study suggest that there may be a large number of thermoelectric alloy systems that are phase inhomogeneous or nanostructured despite adherence to Vegard's Law of alloys, highlighting the importance of careful chemical characterization to differentiate between thermoelectric alloys and composites.

Co-reporter:Collin D. Morris, Hao Li, Hosub Jin, Christos D. Malliakas, John A. Peters, Pantelis N. Trikalitis, Arthur J. Freeman, Bruce W. Wessels, and Mercouri G. Kanatzidis
Chemistry of Materials 2013 Volume 25(Issue 16) pp:3344
Publication Date(Web):August 13, 2013
DOI:10.1021/cm401817r
Flame-melting rapid-cooling reactions were used to synthesize a number of pure phases of the Cs2MIIMIV3Q8 family (MII = Mg, Zn, Cd, Hg; MIV = Ge, Sn; Q = S, Se, Te) whereas the more toxic members were synthesized using a traditional tube furnace synthesis. All Cs2MIIMIV3Q8 compounds presented here crystallize in the noncentrosymmetric space group P212121, except for Cs2ZnGe3S8, which crystallizes in the centrosymmetric space group P21/n. The structures contain chains of corner-sharing MIIQ4 and MIVQ4 tetrahedra linked by edge-sharing MIV2Q6 dimers to give a two-dimensional structure. All phases are structurally similar to the AMIIIMIVQ4 (A = alkali metal, Tl; MIII = Al, Ga, In; MIV = Si, Ge, Sn; Q = S, Se) phases; however, the members of this family have completely ordered MII and MIV sites as opposed to the occupational disorder of MIII and MIV over all tetrahedral sites present in AMIIIMIVQ4. The structural trends of the Cs2MIIMIV3Q8 family are discussed, along with a systematic study of their optical properties. Density functional theory (DFT) electronic structure calculations were performed using the projector augmented wave method to further investigate the trends in the band gaps of the Cs2MIIMIV3Se8 (MII = Mg, Zn; MIV = Ge, Sn) compounds. The experimental diffuse reflectance UV–vis spectroscopy results show that the Mg compounds have smaller band gaps than those containing Zn for both the Ge and the Sn families whereas the DFT calculations show the opposite trend. Cs2HgSn3Se8 was studied as a representative example of this family using differential thermal analysis and melts congruently at 595 °C. Crystal growth of this compound using the Bridgman method resulted in a polycrystalline ingot from which plate crystals ∼2 mm × 3 mm could be cleaved. The band gap of the compounds varies from a narrow 1.07 eV for Cs2ZnGe3Te8 to a wide 3.3 eV for Cs2ZnGe3S8 and Cs2CdGe3S8 making this family a potentially useful source of materials for a variety of electronic applications. Cs2HgSn3Se8 crystals exhibit photoconductivity response where the photoexcited electron and hole show mobility-lifetime products on the order of 3.69 × 10–5 cm2/V and (μτ)h∥ = 7.78 × 10–5 cm2/V, respectively.Keywords: chalcogenide; crystal growth; hard radiation detection; photoconductivity; semiconductors;
Co-reporter:Sandy L. Nguyen, Christos D. Malliakas, John A. Peters, Zhifu Liu, Jino Im, Li-Dong Zhao, Maria Sebastian, Hosub Jin, Hao Li, Simon Johnsen, Bruce W. Wessels, Arthur J. Freeman, and Mercouri G. Kanatzidis
Chemistry of Materials 2013 Volume 25(Issue 14) pp:2868
Publication Date(Web):July 8, 2013
DOI:10.1021/cm401406j
The chemical concept of lattice hybridization was applied to identify new chalcohalide compounds as candidates for X-ray and γ-ray detection. Per this approach, compound semiconductor materials with high density and wide band gaps can be produced that can absorb and detect hard radiation. Here, we show that the mixed chalcogenide–halide compound Tl6SI4 is a congruently melting, mechanically robust chalcohalide material with strong photoconductivity response and an impressive room-temperature figure of merit. Tl6SI4 crystallizes in the tetragonal P4/mnc space group, with a = 9.1758(13) Å, c = 9.5879(19) Å, V = 807.3(2) Å3, and a calculated density of 7.265 g·cm–3. The new material requires a more simplified crystal growth compared to the leading system Cd0.9Zn0.1Te, which is the benchmark room-temperature hard radiation detector material. We successfully synthesized Tl6SI4 crystals to produce detector-grade wafers with high resistivity values (∼1010 Ω·cm) and high-resolution detection of X-ray spectra from an Ag (22 keV) source.Keywords: chalcogenide; crystal growth; radiation detection; wide-gap semiconductors;
Co-reporter:Hao Li, Christos D. Malliakas, John A. Peters, Zhifu Liu, Jino Im, Hosub Jin, Collin D. Morris, Li-Dong Zhao, Bruce W. Wessels, Arthur J. Freeman, and Mercouri G. Kanatzidis
Chemistry of Materials 2013 Volume 25(Issue 10) pp:2089
Publication Date(Web):May 15, 2013
DOI:10.1021/cm400634v
Two new compounds CsCdInQ3 (Q = Se, Te) have been synthesized using a polychalcogenide flux. CsCdInQ3 (Q = Se, Te) crystals are promising candidates for X-ray and γ-ray detection. The compounds crystallize in the monoclinic C2/c space group with a layered structure, which is related to the CsInQ2 (Q = Se, Te) ternary compounds. The cell parameters are: a = 11.708(2) Å, b = 11.712(2) Å, c = 23.051(5) Å, β = 97.28(3)° for CsCdInSe3 and a = 12.523(3) Å, b = 12.517(3) Å, c = 24.441(5) Å, β = 97.38(3)° for CsCdInTe3. Both the Se and Te analogues are wide-band-gap semiconductors with optical band gaps of 2.4 and 1.78 eV for CsCdInSe3 and CsCdInTe3, respectively. High-purity polycrystalline raw material for crystal growth was synthesized by the vapor transfer method for CsCdInQ3. Large single crystals up to 1 cm have been grown using the vertical Bridgman method and exhibit photoconductive response. The electrical resistivity of the crystals is highly anisotropic. The electronic structure calculation within the density functional theory (DFT) framework indicates a small effective mass for the carriers. Photoconductivity measurements on the as grown CsCdInQ3 crystals gives high carrier mobility-lifetime (μτ) products comparable to other detector materials such as α-HgI2, PbI2, and CdxZn1–xTe (CZT).Keywords: chalcogenide; crystal growth; hard radiation detection; photoconductivity;
Co-reporter:Joshua L. Mertz, Zohreh Hassanzadeh Fard, Christos D. Malliakas, Manolis J. Manos, and Mercouri G. Kanatzidis
Chemistry of Materials 2013 Volume 25(Issue 10) pp:2116
Publication Date(Web):May 15, 2013
DOI:10.1021/cm400699r
137Cs and 90Sr, both byproducts of the uranium and plutonium fission processes, make up the majority of high-level waste from nuclear power plants. 63Ni is a byproduct of the erosion-corrosion process of the reactor components in nuclear energy plants. The concentrations of these ions in solution determine the Waste Class (A, B, or C); thus, their selective removal in the presence of large excesses of nonradioactive ions is necessary to reduce waste volume and cut disposal costs. We report the new material K2xMgxSn3–xS6 (x = 0.5–1, KMS-2) and its application for the ion exchange of Cs+, Sr2+, and Ni2+ in varying conditions. This compound crystallizes in the hexagonal space group P63/mmc with cell parameters a = b = 3.6749(8) Å and c = 16.827(4) Å. The difference in crystal structure between KMS-2, the previously reported Mn analog K2xMnxSn3–xS6 (KMS-1), and their parent SnS2 is also described. Distribution coefficients for KMS-2 are high for Cs+ (7.1 × 103 mL/g) and Sr2+ (2.1 × 104 mL/g) at neutral pH (∼ 6 ppm, V/m ∼1000 mL/g). We also report on the comparative study of Ni2+ ion exchange with both KMS-1 and KMS-2. Additional competitive reactions using Cs+, Sr2+, and Ni2+ in high concentrations of salt solution and at different pH values are reported.Keywords: absorption; cesium; chalcogenide; ion-exchange; nuclear waste; radioactive waste; strontium; waste management;
Co-reporter:Alexandros P. Katsoulidis, Scott M. Dyar, Raanan Carmieli, Christos D. Malliakas, Michael R. Wasielewski and Mercouri G. Kanatzidis  
Journal of Materials Chemistry A 2013 vol. 1(Issue 35) pp:10465-10473
Publication Date(Web):01 Jul 2013
DOI:10.1039/C3TA11934C
A new family of paramagnetic microporous polymeric organic frameworks (POFs) has been developed through the co-polymerization of terephthalaldehyde and pyrrole, indole, and carbazole, respectively. These POFs are functionalized with stable unpaired electrons and electron paramagnetic resonance spectroscopy and pulsed ENDOR spectroscopy confirms their existence. The free radicals are produced in the early steps of polymerization and are responsible for their optical properties and the chemical adsorption properties of the POFs. The optical band gap of these materials ranges from 0.8 to 1.6 eV. The new POFs have spherical morphology and exhibit surface areas up to 777 m2 g−1 (Pyr-POF-1). Furthermore, Pyr-POF-1 displays the uptake of CO2 14% wt and C2H6 9% wt at 273 K/1 bar and H2 1.2% wt at 77 K/1 bar. The pyrrole based material (Pyr-POF-2) shows high capacity for CO2, 10% wt, under ambient conditions (298 K/1 bar) and the isosteric heat of CO2 adsorption of ∼34 kJ mol−1. The preparation of this new POF family is based on a very simple synthetic pathway and highlights the significance of terephthalaldehyde as a precursor for the synthesis of low cost functional porous polymers.
Co-reporter:Arief C. Wibowo, Christos D. Malliakas, Zhifu Liu, John. A. Peters, Maria Sebastian, Duck Young Chung, Bruce W. Wessels, and Mercouri G. Kanatzidis
Inorganic Chemistry 2013 Volume 52(Issue 12) pp:7045-7050
Publication Date(Web):May 28, 2013
DOI:10.1021/ic401086r
We investigated an antimony chalcohalide compound, SbSeI, as a potential semiconductor material for X-ray and γ-ray detection. SbSeI has a wide band gap of 1.70 eV with a density of 5.80 g/cm3, and it crystallizes in the orthorhombic Pnma space group with a one-dimensional chain structure comprised of infinite zigzag chains of dimers [Sb2Se4I8]n running along the crystallographic b axis. In this study, we investigate conditions for vertical Bridgman crystal growth using combinations of the peak temperature and temperature gradients as well as translation rate set in a three-zone furnace. SbSeI samples grown at 495 °C peak temperature and 19 °C/cm temperature gradient with 2.5 mm/h translation rate produced a single phase of columnar needlelike crystals aligned along the translational direction of the growth. The ingot sample exhibited an n-type semiconductor with resistivity of ∼108 Ω·cm. Photoconductivity measurements on these specimens allowed us to determine mobility–lifetime (μτ) products for electron and hole carriers that were found to be of similar order of magnitude (∼10–4 cm2/V). Further, the SbSeI ingot with well-aligned, one-dimensional columnar needlelike crystals shows an appreciable response of Ag Kα X-ray.
Co-reporter:Mihai Sturza, Fei Han, Daniel P. Shoemaker, Christos D. Malliakas, Duck Young Chung, Hosub Jin, Arthur J. Freeman, and Mercouri G. Kanatzidis
Inorganic Chemistry 2013 Volume 52(Issue 12) pp:7210-7217
Publication Date(Web):June 3, 2013
DOI:10.1021/ic4008284
Mixed S2–/S1– oxidation states have been discovered in the new quaternary compound NaBa2Cu3S5. Synthesized from the reaction of Cu in a molten alkali metal/polysulfide flux, the compound crystallizes in monoclinic space group C2/m with a = 16.5363(7) Å, b = 5.5374(5) Å, c = 10.3717(10) Å, β = 98.535(8)°. The Na+ Ba2+2 [Cu+3S3]3–S22– crystal structure contains layers of edge sharing CuS4 tetrahedra and sheets of S22– dimers. These layers are separated by mixed Ba/Na cation layers. The conductivity of the single crystals of NaBa2Cu3S5 is ∼450 S cm–1 at room temperature, and increasing conductivity with decreasing temperature is observed, indicating metallic behavior despite the optical band gap of 0.45 eV. A small positive thermopower (45–55 μV K–1 from 300 K to 500 K) and Hall effect measurements also confirm p-type conductivity with carrier concentration at 200 K of ∼1.6 × 1021 cm–3 and a hole mobility of ∼2 cm2 V–1 s–1. NaBa2Cu3S5 exhibits temperature-independent Pauli paramagnetism.
Co-reporter:Sandy L. Nguyen, Christos D. Malliakas, Melanie C. Francisco, and Mercouri G. Kanatzidis
Inorganic Chemistry 2013 Volume 52(Issue 11) pp:6520-6532
Publication Date(Web):May 14, 2013
DOI:10.1021/ic400483d
We present new chalcogenide compounds, Ag2Te(MS2)3 (M = V, Nb), built up of alternating planes of [MS2] and [Ag2Te]. The Ag and Te atoms are linearly coordinated by S atoms in the [MS2] layers and held in place by covalent interactions. Structural polymorphism was found by single crystal X-ray diffraction studies, where long-range ordering or disorder of the Ag and Te atoms within the hexagonal planar [Ag2Te] layer yielded two distinct crystal forms. When the Ag and Te atoms are ordered, the two isostructural compounds crystallize in the non-centrosymmetric P6̅2m space group, with a = 5.5347(8) Å, c = 8.0248(16) Å, and V = 212.89(6) Å3 for α-Ag2Te(VS2)3 and a = 5.7195(8) Å, c = 8.2230(16) Å, and V = 232.96(6) Å3 for α-Ag2Te(NbS2)3. For the occupationally disordered Ag/Te arrangement, a subcell of the ordered phase that crystallizes in the non-centrosymmetric P6̅m2 space group, with a = 3.2956(6) Å (=aa/(3)1/2), c = 8.220(2) Å, and V = 77.31(3) Å3 for β-Ag2Te(VS2)3, was identified. Furthermore, pair distribution function analysis revealed local distortions in the [Ag2Te] layer. Band structure calculations at the density functional theory level were carried out to investigate the electronic structure of Ag2Te(MS2)3. Electronic transport measurements on Ag2Te(MS2)3 show that they exhibit p-type metallic behavior. Thermal analyses and temperature-dependent powder X-ray diffraction studies were focused on the stability and transformation/decomposition of the Ag2Te(MS2)3 phases. Magnetic susceptibility data are also reported. The new intercalated Ag2Te(MS2)3 system features a unique hypervalent Te with a three-center, four-electron bonding environment isoelectronic to that found in I3–.
Co-reporter:Kanishka Biswas, In Chung, Jung-Hwan Song, Christos D. Malliakas, Arthur J. Freeman, and Mercouri G. Kanatzidis
Inorganic Chemistry 2013 Volume 52(Issue 10) pp:5657-5659
Publication Date(Web):April 29, 2013
DOI:10.1021/ic400782c
Lewis acidic organic ionic liquids provide a novel synthetic medium to prepare new semiconducting chalcogenides, [(Bi4Te4Br2)(Al2Cl5.46Br0.54)]Cl2 (1) and [Bi2Se2Br](AlCl4) (2). Compound 1 features a cationic [(Bi4Te4Br2)(Al2Cl5.46Br0.54)]2+ three-dimensional framework, while compound 2 consists of cationic layers of [Bi2Se2Br]2+. Spectroscopically measured band gaps of 1 and 2 are ∼0.6 and ∼1.2 eV, respectively. Thermoelectric power measurements of single crystals of 1 indicate an n-type semiconductor.
Co-reporter:Sebastian C. Peter, Christos D. Malliakas, and Mercouri G. Kanatzidis
Inorganic Chemistry 2013 Volume 52(Issue 9) pp:4909-4915
Publication Date(Web):April 25, 2013
DOI:10.1021/ic3024925
YbMn0.17Si1.88 was synthesized from the reaction of ytterbium, manganese, and silicon using indium as a flux. The average structure of YbMn0.17Si1.88 was refined in the monoclinic space group P21, with a = 4.0107(8) Å, b = 3.8380(8) Å, c = 14.458(3) Å, β = 97.97(3)°, R1/wR2 = 0.0296/0.0720. The structure can be described as the intergrowth of three AlB2-type layers and one BaAl4-type layer. Magnetic susceptibility measurements suggest that the ytterbium atoms in YbMnxSi2-x exist in a mixed valent or intermediate valent state. YbMn0.17Si1.88 shows weak antiferromagnetic ordering below ∼4.5 K. The magnetic interactions between the Mn and Yb atoms in YbMn0.17Si1.88 are evident from the magnetic susceptibility measurements performed at low field. A negative magnetization is observed on warming and a positive magnetization on cooling. The heat capacity data suggest moderate heavy fermion behavior.
Co-reporter:Arief C. Wibowo, Christos D. Malliakas, Duck Young Chung, Jino Im, Arthur J. Freeman, and Mercouri G. Kanatzidis
Inorganic Chemistry 2013 Volume 52(Issue 6) pp:2973-2979
Publication Date(Web):February 28, 2013
DOI:10.1021/ic3023826
Three quaternary mercury bismuth chalcohalides, Hg3Q2Bi2Cl8 (Q = S, Se, Te), are reported along with their syntheses, crystal structures, electronic band structures, and optical properties. The compounds are structurally similar with a layer comprised of a hole perforated sheet network of [Hg3Q2]2+ (Q = S and Te) that forms by fused cyclohexane, chairlike Hg6Q6 rings. The cationic charge in the network is balanced by edge-sharing monocapped trigonal-prismatic anions of [Bi2Cl8]2– that form a two-dimensional network located between layers. Compound 1, Hg3S2Bi2Cl8, crystallizes in the monoclinic space group C12/m1 with a = 12.9381(9) Å, b = 7.3828(6) Å, c = 9.2606(6) Å, and β = 116.641(5)°. Compound 2, Hg3Te2Bi2Cl8, crystallizes in the monoclinic space group C12/c1 with a = 17.483(4) Å, b = 7.684(2) Å, c = 13.415(3) Å, and β = 104.72(3)°. The crystals of the Hg3Se2Bi2Cl8 analogue exhibit complex modulations and structural disorder, which complicated its structural refinement. Compounds 1 and 2 melt incongruently and show band gaps of 3.26 and 2.80 eV, respectively, which are in a good agreement with those from band-structure density functional theory calculations.
Co-reporter:Tarun K. Bera, Ratnasabapathy G. Iyer, Christos D. Malliakas, and Mercouri G. Kanatzidis
Inorganic Chemistry 2013 Volume 52(Issue 19) pp:11370-11376
Publication Date(Web):September 24, 2013
DOI:10.1021/ic4016542
The quaternary Cs2S/Bi/As/S system was studied in an attempt to introduce two different asymmetric but isoelectronic building units, namely, [BiIIIxSy] and [AsIIIxSy], in a single structure. Reactions with a comparatively lower equivalent of arsenic in the Cs2S/Bi/As/S mixture led to the crystalline compound Cs3Bi(AsS4)2. The structure features tetrahedral [AsVS4]3– connected to BiIII centers to give infinite 1/∞[Bi(AsS4)23–] chains. When the basicity was raised in these low arsenic fluxes by increasing the Cs2S fraction, the crystalline compound Cs9Bi(AsS4)4, also featuring [AsVS4]3– anions, was formed. On the other hand, arsenic-rich mixtures of Cs2S/Bi/As/S led to the formation of the glassy phase Cs2BiAs3S7, which contains AsIII species. X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and pair distribution function (PDF) analysis indicate the presence of AsIII-containing [AsnS2n+1] fragments in the glass structure. Several glasses in the series Csn–1BiAsnS2n+1 were also prepared using solid-state fusion reactions. The band gaps of the Csn–1BiAsnS2n+1 glasses are in the range of 1.51–1.81 eV, while that of the crystalline compound Cs3Bi(AsS4)2 is ∼2.33 eV. The thermal and optical behaviors of these compounds are correlated with their structures and building units.
Co-reporter:Nicholas P. Calta and Mercouri G. Kanatzidis
Inorganic Chemistry 2013 Volume 52(Issue 17) pp:9931-9940
Publication Date(Web):August 9, 2013
DOI:10.1021/ic401659y
Four novel intermetallic silicides, RE5Mn4Al23–xSix (x = 7.9(9), RE = Ho, Er, Yb) and Er44Mn55(AlSi)237, have been prepared by reaction in aluminum flux. Three RE5Mn4Al23–xSix compounds crystallize in the tetragonal space group P4/mmm with the relatively rare Gd5Mg5Fe4Al18–xSix structure type. Refinement of single-crystal X-ray diffraction data yielded unit cell parameters of a = 11.3834(9)–11.4171(10) Å and c = 4.0297(2)–4.0575(4) Å with volumes ranging from 522.41(5) to 528.90(8) Å3. Structure refinements on single-crystal diffraction data show that Er44Mn55(AlSi)237 adopts a new cubic structure type in the space group Pm3̅n with a very large unit cell edge of a = 21.815(3) Å. This new structure is best understood when viewed as two sets of nested polyhedra centered on a main group atom and a manganese atom. These polyhedral clusters describe the majority of the atomic positions in the structure and form a perovskite-type network. We also report the electrical and magnetic properties of the title compounds. All compounds except the Ho analogue behave as normal paramagnetic metals without any observed magnetic transitions above 5 K and exhibit antiferromagnetic correlations deduced from the value of their Curie constants. Ho5Mn4Al23–xSix exhibits a ferromagnetic transition at 20 K and an additional metamagnetic transition at 10 K, suggesting independent ordering temperatures for two distinct magnetic sublattices.
Co-reporter:Constantinos C. Stoumpos, Christos D. Malliakas, and Mercouri G. Kanatzidis
Inorganic Chemistry 2013 Volume 52(Issue 15) pp:9019-9038
Publication Date(Web):July 8, 2013
DOI:10.1021/ic401215x
A broad organic–inorganic series of hybrid metal iodide perovskites with the general formulation AMI3, where A is the methylammonium (CH3NH3+) or formamidinium (HC(NH2)2+) cation and M is Sn (1 and 2) or Pb (3 and 4) are reported. The compounds have been prepared through a variety of synthetic approaches, and the nature of the resulting materials is discussed in terms of their thermal stability and optical and electronic properties. We find that the chemical and physical properties of these materials strongly depend on the preparation method. Single crystal X-ray diffraction analysis of 1–4 classifies the compounds in the perovskite structural family. Structural phase transitions were observed and investigated by temperature-dependent single crystal X-ray diffraction in the 100–400 K range. The charge transport properties of the materials are discussed in conjunction with diffuse reflectance studies in the mid-IR region that display characteristic absorption features. Temperature-dependent studies show a strong dependence of the resistivity as a function of the crystal structure. Optical absorption measurements indicate that 1–4 behave as direct-gap semiconductors with energy band gaps distributed in the range of 1.25–1.75 eV. The compounds exhibit an intense near-IR photoluminescence (PL) emission in the 700–1000 nm range (1.1–1.7 eV) at room temperature. We show that solid solutions between the Sn and Pb compounds are readily accessible throughout the composition range. The optical properties such as energy band gap, emission intensity, and wavelength can be readily controlled as we show for the isostructural series of solid solutions CH3NH3Sn1–xPbxI3 (5). The charge transport type in these materials was characterized by Seebeck coefficient and Hall-effect measurements. The compounds behave as p- or n-type semiconductors depending on the preparation method. The samples with the lowest carrier concentration are prepared from solution and are n-type; p-type samples can be obtained through solid state reactions exposed in air in a controllable manner. In the case of Sn compounds, there is a facile tendency toward oxidation which causes the materials to be doped with Sn4+ and thus behave as p-type semiconductors displaying metal-like conductivity. The compounds appear to possess very high estimated electron and hole mobilities that exceed 2000 cm2/(V s) and 300 cm2/(V s), respectively, as shown in the case of CH3NH3SnI3 (1). We also compare the properties of the title hybrid materials with those of the “all-inorganic” CsSnI3 and CsPbI3 prepared using identical synthetic methods.
Co-reporter:Arief C. Wibowo ; Christos D. Malliakas ; Duck Young Chung ; Jino Im ; Arthur J. Freeman
Inorganic Chemistry 2013 Volume 52(Issue 20) pp:11875-11880
Publication Date(Web):October 9, 2013
DOI:10.1021/ic4014174
The new compounds TlHg6Q4Br5 (Q = S, Se) are reported along with their syntheses, crystal structures, and thermal and optical properties, as well as electronic band structure calculations. Both compounds crystallize in the tetragonal I4/m space group with a = 14.145(1) Å, c = 8.803(1) Å, and dcalc = 7.299 g/cm3 for TlHg6S4Br5 (compound 1) and a = 14.518(2) Å, c = 8.782(1) Å, and dcalc = 7.619 g/cm3 for TlHg6Se4Br5 (compound 2). They consist of cuboid Hg12Q8 building units interconnected by trigonal pyramids of BrHg3, forming a three-dimensional structure. The interstitial spaces are filled with thallium and bromide ions. Compounds 1 and 2 melt incongruently and show band gaps of 3.03 and 2.80 eV, respectively, which agree well with the calculated ones. First-principles electronic structure calculations at the density functional theory level reveal that both compounds have indirect band gaps, but there also exist direct transitions at energies similar to the indirect gaps.
Co-reporter:Constantinos C. Stoumpos, Christos D. Malliakas, John A. Peters, Zhifu Liu, Maria Sebastian, Jino Im, Thomas C. Chasapis, Arief C. Wibowo, Duck Young Chung, Arthur J. Freeman, Bruce W. Wessels, and Mercouri G. Kanatzidis
Crystal Growth & Design 2013 Volume 13(Issue 7) pp:2722-2727
Publication Date(Web):June 3, 2013
DOI:10.1021/cg400645t
The synthesis, crystal growth, and structural and optoelectronic characterization has been carried out for the perovskite compound CsPbBr3. This compound is a direct band gap semiconductor which meets most of the requirements for successful detection of X- and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response, with detector resolution comparable to that of commercial, state-of-the-art materials. A structural phase transition which occurs during crystal growth at higher temperature does not seem to affect its crystal quality. Its μτ product for both hole and electron carriers is approximately equal. The μτ product for electrons is comparable to cadmium zinc telluride (CZT) and that for holes is 10 times higher than CZT.
Co-reporter:Steven N. Girard, Thomas C. Chasapis, Jiaqing He, Xiaoyuan Zhou, Euripides Hatzikraniotis, Ctirad Uher, Konstantinos M. Paraskevopoulos, Vinayak P. Dravid and Mercouri G. Kanatzidis  
Energy & Environmental Science 2012 vol. 5(Issue 9) pp:8716-8725
Publication Date(Web):07 Aug 2012
DOI:10.1039/C2EE22495J
Recent advances in the field of thermoelectrics have shown embedding appropriate nanostructures can significantly suppress the lattice thermal conductivity and therefore enhance ZT. Here we report a new class of thermoelectric composites of PbTe–PbSnS2. PbSnS2 is a naturally layered material (space group Pnma) comprised of Sn–Pb bilayers approximately 0.6 nm in thickness. High resolution transmission electron microscopy reveals the PbSnS2 segregates into coherent lamellar structures 50–100 nm in thickness that extend 100 nm to 15 μm in length. Despite the relatively large size of the PbSnS2 precipitates, we find that incorporation of PbSnS2 in PbTe results in significant reduction in lattice thermal conductivity to 0.4–0.65 W m−1 K−1 over the temperature range 300–700 K, a reduction of 50–70% over bulk PbTe. As a result, a maximum ZT of 1.1 is obtained for ingot samples of the PbTe–PbSnS2 6% composition. We provide extensive characterization of the physical, structural, and chemical properties of this materials system including powder X-ray diffraction, infrared reflectivity, scanning and transmission electron microscopy, and thermoelectric properties measurements. The synthesis method is simple and general, opening possibilities for similar systems to yield materials exhibiting low lattice thermal conductivity without it being necessary to embed nanoscale (5–20 nm) features.
Co-reporter:Mi-Kyung Han;Xiaoyuen Zhou;Ctirad Uher;Sung-Jin Kim
Advanced Energy Materials 2012 Volume 2( Issue 10) pp:1218-1225
Publication Date(Web):
DOI:10.1002/aenm.201200083

Abstract

The effects of Cd-doping on the thermoelectric properties of Sn1–xPbxTe are investigated and compared to the properties of the corresponding Sn1–xPbxTe solid solutions. The addition of Cd results in a reduction in the carrier concentration and changes in the physical properties, as well as in the conduction type of Sn1–xPbxTe. A significant increase in the power factor accompanied by a reduction in the thermal conductivity result in a higher figure of merit (ZT) for (Sn1–xPbx)0.97Cd0.03Te than that of undoped Sn1–xPbxTe. The maximum ZT (∼0.7) values are observed for p-type material with x = 0.36 at 560 K. Much higher values (ZT ∼ 1.2 at 560 K for x = 0.73) are obtained on n-type samples.

Co-reporter:Michihiro Ohta;Kanishka Biswas;Shih-Han Lo;Jiaqing He;Duck Young Chung;Vinayak P. Dravid
Advanced Energy Materials 2012 Volume 2( Issue 9) pp:
Publication Date(Web):
DOI:10.1002/aenm.201290046
Co-reporter:Michihiro Ohta;Kanishka Biswas;Shih-Han Lo;Jiaqing He;Duck Young Chung;Vinayak P. Dravid
Advanced Energy Materials 2012 Volume 2( Issue 9) pp:1117-1123
Publication Date(Web):
DOI:10.1002/aenm.201100756

Abstract

The thermoelectric properties of crystalline melt-grown ingots of p-type PbTe–xMgTe (x = 1–3 mol%) doped with Na2Te (1–2 mol%) were investigated over the temperature range of 300 K to 810 K. While the powder X-ray diffraction patterns show that all samples crystallize in the NaCl-type structure with no MgTe or other phases present, transmission electron microscopy reveals ubiquitous MgTe nanoprecipitates in the PbTe. The very small amounts of MgTe in PbTe have only a small effect on the electrical transport properties of the system, while they have a large effect on thermal transport significantly reducing the lattice thermal conductivity. A ZT of 1.6 at 780 K is achieved for the PbTe containing 2% MgTe doped with 2% Na2Te.

Co-reporter:Kanishka Biswas;Li-Dong Zhao
Advanced Energy Materials 2012 Volume 2( Issue 6) pp:634-638
Publication Date(Web):
DOI:10.1002/aenm.201100775
Co-reporter:Mi-Kyung Han;John Androulakis;Sung-Jin Kim
Advanced Energy Materials 2012 Volume 2( Issue 1) pp:157-161
Publication Date(Web):
DOI:10.1002/aenm.201100613

Abstract

Thermoelectric materials based on Pb-free compositions are of considerable current interest in environmentally friendly power-generation applications derived from waste-heat sources. Here, a new study of the thermoelectric properties of the tin-based compositions with the general formula AgSnmSbTem+2 (m = 2, 4, 5, 7, 10, 14, 18) is presented, where the m value is used as the tuning parameter of the thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity are measured from 300 K to 723 K and the resulting thermoelectric figure of merit is determined as a function of the SnTe/AgSbTe2 ratio. A thermoelectric figure of merit ZT ≈1 is obtained at 710 K for m = 4, indicating that the system AgSnmSbTem+2 holds great promise as an alternative p-type, lead-free, thermoelectric material.

Co-reporter:Jiaqing He, I. D. Blum, Hui-Qiong Wang, S. N. Girard, J. Doak, Li-Dong Zhao, Jin-Cheng Zheng, G. Casillas, C. Wolverton, M. Jose-Yacaman, D. N. Seidman, M. G. Kanatzidis, and V. P. Dravid
Nano Letters 2012 Volume 12(Issue 11) pp:5979-5984
Publication Date(Web):October 16, 2012
DOI:10.1021/nl303449x
The morphology of crystalline precipitates in a solid-state matrix is governed by complex but tractable energetic considerations driven largely by volume strain energy minimization and anisotropy of interfacial energies. Spherical precipitate morphologies are favored by isotropic systems, while anisotropic interfacial energies give energetic preference to certain crystallographically oriented interfaces, resulting in a faceted precipitate morphology. In conventional solid–solution precipitation, a precipitate’s morphological evolution is mediated by surface anchoring of capping molecules, which dramatically alter the surface energy in an anisotropic manner, thereby providing exquisite morphology control during crystal growth. Herein, we present experimental evidence and theoretical validation for the role of a ternary element (Na) in controlling the morphology of nanoscale PbS crystals nucleating in a PbTe matrix, an important bulk thermoelectric system. The PbS nanostructures formed by phase separation from a PbI2-doped or undoped PbTe matrix have irregular morphologies. However, replacing the iodine dopant with Na (1–2 mol %) alters dramatically the morphology of the PbS precipitates. Segregation of Na at PbTe/PbS interfaces result in cuboidal and truncated cuboidal morphologies for PbS. Using analytical scanning/transmission electron microscopy and atom-probe tomography, we demonstrate unambiguously that Na partitions to the precipitates and segregates at the matrix/precipitate interfaces, inducing morphological anisotropy of PbS precipitates. First-principles and semiclassical calculations reveal that Na as a solute in PbTe has a higher energy than in PbS and that Na segregation at a (100) PbTe/PbS interface decreases the total energy of matrix/precipitate system, resulting in faceting of PbS precipitates. These results provide an impetus for a new strategy for controlling morphological evolution in matrix/precipitate systems, mediated by solute partitioning of ternary additions.
Co-reporter:Collin D. Morris ; In Chung ; Sungoh Park ; Connor M. Harrison ; Daniel J. Clark ; Joon I. Jang
Journal of the American Chemical Society 2012 Volume 134(Issue 51) pp:20733-20744
Publication Date(Web):November 16, 2012
DOI:10.1021/ja309386e
A new series of germanium chalcophosphates with the formula A4GeP4Q12 (A = K, Rb, Cs; Q = S, Se) have been synthesized. The selenium compounds are isostructural and crystallize in the polar orthorhombic space group Pca21. The sulfur analogues are isostructural to one another but crystallize in the centrosymmetric monoclinic space group C2/c. All structures contain the new molecular anion [GeP4Q12]4–; however, the difference between the sulfides and selenides arises from the change in crystal packing. Each discrete molecule is comprised of two ethane-like P2Q6 units that chelate to a central tetrahedral Ge4+ ion in a bidentate fashion. The selenides were synthesized pure by stoichiometric reaction of the starting materials, whereas the sulfides contained second phases. The band gaps of the molecular salts are independent of the alkali metal counterions and have a value of 2.0 eV for the selenides and 3.0–3.1 eV for the sulfides. All A4GeP4Se12 compounds melt congruently, and the potassium analogue can be quenched to give a glassy phase that retains its short-range order as shown by Raman spectroscopy and powder X-ray diffraction. Interestingly, K4GeP4Se12 is a phase-change material that reversibly converts between glassy and crystalline states and passes through a metastable crystalline state upon heating just before crystallizing into its slow-cooled form. Initial second harmonic generation (SHG) experiments showed crystalline K4GeP4Se12 outperforms the other alkali metal analogues and exhibits the strongest second harmonic generation response among reported quaternary chalcophosphates, ∼30 times that of AgGaSe2 at 730 nm. A more thorough investigation of the nonlinear optical (NLO) properties was performed across a range of wavelengths that is almost triple that of previous reports (λ = 1200–2700 nm) and highlights the importance of broadband measurements. Glassy K4GeP4Se12 also exhibits a measurable SHG response with no poling.
Co-reporter:Youngtak Oh ; Collin D. Morris
Journal of the American Chemical Society 2012 Volume 134(Issue 35) pp:14604-14608
Publication Date(Web):August 21, 2012
DOI:10.1021/ja3061535
We report the synthesis of metal–chalcogenide aerogels from Pt2+ and polysulfide clusters ([Sx]2–, x = 3–6). The cross-linking reaction of these ionic building blocks in formamide solution results in spontaneous gelation and eventually forms a monolithic dark brown gel. The wet gel is transformed into a highly porous aerogel by solvent exchanging and subsequent supercritical drying with CO2. The resulting platinum polysulfide aerogels possess a highly porous and amorphous structure with an intact polysulfide backbone. These chalcogels feature an anionic network that is charged balanced with potassium cations, and hosts highly accessible S–S bonding sites, which allows for reversible cation exchange and mercury vapor capture that is superior to any known material.
Co-reporter:Melanie C. Francisco 1; Christos D. Malliakas 4; Robin T. Macaluso 2; Joseph Prestigiacomo 3; Neel Haldolaarachchige 3; Philip W. Adams 3; David P. Young 3; Ying Jia 4; Helmut Claus 4; K.E. Gray 4 4
Journal of the American Chemical Society 2012 Volume 134(Issue 31) pp:12998-13009
Publication Date(Web):July 31, 2012
DOI:10.1021/ja302812s
New distorted variants of the cubic BaHg11 structure type have been synthesized in Ga flux. Multiple phases of CePd3+xGa8-x, which include an orthorhombic Pmmn structure (x = 3.21(2)), a rhombohedral R3̅m structure (x = 3.13(4)), and a cubic Fm3̅m superstructure (x = 2.69(6)), form preferentially depending on reaction cooling rate and isolation temperature. Differential thermal analysis and in situ temperature-dependent powder X-ray diffraction patterns show a reversible phase transition at approximately 640 °C between the low temperature orthorhombic and rhombohedral structures and the high temperature cubic superstructure. Single crystal X-ray diffraction experiments indicate that the general structure of BaHg11, including the intersecting planes of a kagomé-type arrangement of Ce atoms, is only slightly distorted in the low temperature phases. A combination of Kondo, crystal electric field, and magnetic frustration effects may be present, resulting in low temperature anomalies in magnetic susceptibility, electrical resistivity, and heat capacity measurements. In addition to CePd3+xGa8-x, the rare earth analogues REPd3+xGa8-x, RE = La, Nd, Sm, Tm, and Yb, were successfully synthesized and also crystallize in one of the lower symmetry space groups.
Co-reporter:Myung-Gil Kim ; Jonathan W. Hennek ; Hyun Sung Kim ; Mercouri G. Kanatzidis ; Antonio Facchetti ;Tobin J. Marks
Journal of the American Chemical Society 2012 Volume 134(Issue 28) pp:11583-11593
Publication Date(Web):June 6, 2012
DOI:10.1021/ja301941q
Delayed ignition of combustion synthesis precursors can significantly lower metal oxide film formation temperatures. From bulk In2O3 precursor analysis, it is shown here that ignition temperatures can be lowered by as much as 150 °C. Thus, heat generation from ∼60 nm thick In2O3 films is sufficient to form crystalline In2O3 films at 150 °C. Furthermore, we show that the low processing temperatures of sufficiently thick combustion precursor films can be applied to the synthesis of metal oxide nanocomposite films from nanomaterials overcoated/impregnated with the appropriate combustion precursor. The resulting, electrically well-connected nanocomposites exhibit significant enhancements in charge-transport properties vs conventionally processed oxide films while maintaining desirable intrinsic electronic properties. For example, while ZnO nanorod-based thin-film transistors exhibit an electron mobility of 10–3–10–2 cm2 V–1 s–1, encasing these nanorods within a ZnO combustion precursor-derived matrix enhances the electron mobility to 0.2 cm2 V–1 s–1. Using commercially available ITO nanoparticles, the intrinsically high carrier concentration is preserved during nanocomposite film synthesis, and an ITO nanocomposite film processed at 150 °C exhibits a conductivity of ∼10 S cm–1 without post-reductive processing.
Co-reporter:Ronald B. Soriano ; Indika U. Arachchige ; Christos D. Malliakas ; Jinsong Wu
Journal of the American Chemical Society 2012 Volume 135(Issue 2) pp:768-774
Publication Date(Web):December 28, 2012
DOI:10.1021/ja309626q
A series of novel rock-salt-type PbmSb2nTem+3n nanocrystals (m = 2, 3, 4, 6, 8, and 10; n = 1 and 2) were successfully prepared using a colloidal synthesis route. These materials are stable only on the nanoscale and have no bulk analogues. Elemental compositions were determined using scanning transmission electron microscopy/energy-dispersive X-ray spectroscopy (STEM/EDS) and inductively coupled plasma atomic emission spectroscopy (ICP-AES). The nanocrystals exhibit well-defined band energies in the mid-IR region that are nearly independent of their atomic compositions. PbmSb2nTem+3n nanocrystals behave as metastable homogeneous solid solutions at room temperature and tend to phase separate into the respective binary PbTe + Sb2Te3 at 300 °C. Furthermore, pair distribution function (PDF) analysis suggests that the local structure of these PbmSb2nTem+3n nanocrystals is distorted with respect to the rock-salt structure.
Co-reporter:Li-Dong Zhao ; Jiaqing He ; Shiqiang Hao ; Chun-I Wu ; Timothy P. Hogan ; C. Wolverton ; Vinayak P. Dravid
Journal of the American Chemical Society 2012 Volume 134(Issue 39) pp:16327-16336
Publication Date(Web):September 19, 2012
DOI:10.1021/ja306527n
We have investigated in detail the effect of CdS and ZnS as second phases on the thermoelectric properties of p-type PbS. We report a ZT of ∼1.3 at 923 K for 2.5 at.% Na-doped p-type PbS with endotaxially nanostructured 3.0 at.% CdS. We attribute the high ZT to the combination of broad-based phonon scattering on multiple length scales to reduce (lattice) thermal conductivity and favorable charge transport through coherent interfaces between the PbS matrix and metal sulfide nanophase precipitates, which maintains the requisite high carrier conductivity and the associated power factor. Similar to large ionically bonded metal sulfides (ZnS, CaS, and SrS), the covalently bonded CdS can also effectively reduce the lattice thermal conductivity in p-type PbS. The presence of ubiquitous nanostructuring was confirmed by transmission electron microscopy. Valence and conduction band energy levels of the NaCl-type metal sulfides, MS (M = Pb, Cd, Zn, Ca, and Sr) were calculated from density functional theory to gain insight into the band alignment between PbS and the second phases in these materials. The hole transport is controlled by band offset minimization through the alignment of valence bands between the host PbS and the embedded second phases, MS (M = Cd, Zn, Ca, and Sr). The smallest valence band offset of about 0.13 eV at 0 K was found between PbS and CdS which is diminished further by thermal band broadening at elevated temperature. This allows carrier transport between the endotaxially aligned components (i.e., matrix and nanostructure), thus minimizing significant deterioration of the hole mobility and power factor. We conclude the thermoelectric performance of the PbS system and, by extension, other systems can be enhanced by means of a closely coupled phonon-blocking/electron-transmitting approach through embedding endotaxially nanostructured second phases.
Co-reporter:Manolis. J. Manos
Journal of the American Chemical Society 2012 Volume 134(Issue 39) pp:16441-16446
Publication Date(Web):September 25, 2012
DOI:10.1021/ja308028n
Uranium is the main source for nuclear energy but also one of the most toxic heavy metals. The current methods for uranium removal from water present limitations, such as narrow pH operating range, limited tolerance to high salt concentrations, or/and high cost. We show here that a layered sulfide ion exchanger K2MnSn2S6 (KMS-1) overcomes these limitations and is exceptionally capable in selectively and rapidly sequestering high (ppm) as well as trace (ppb) quantities of UO22+ under a variety of conditions, including seawater. KMS-1 can efficiently absorb the naturally occurring U traces in seawater samples. The results presented here reveal the exceptional potential of sulfide-based ion-exchangers for remediating of uranium-containing wastes and groundwater and for extracting uranium from the sea.
Co-reporter:Benjamin D. Yuhas ; Amanda L. Smeigh ; Alexios P. Douvalis ; Michael R. Wasielewski
Journal of the American Chemical Society 2012 Volume 134(Issue 25) pp:10353-10356
Publication Date(Web):June 4, 2012
DOI:10.1021/ja303640s
The naturally abundant elements used to catalyze photochemical processes in biology have inspired many research efforts into artificial analogues capable of proton reduction or water oxidation under solar illumination. Most biomimetic systems are isolated molecular units, lacking the protective encapsulation afforded by a protein’s tertiary structure. As such, advances in biomimetic catalysis must also be driven by the controlled integration of molecular catalysts into larger superstructures. Here, we present porous chalcogenide framework materials that contain biomimetic catalyst groups immobilized in a chalcogenide network. The chalcogels are formed via metathesis reaction between the clusters [Mo2Fe6S8(SPh)3Cl6]3– and [Sn2S6]4– in solution, yielding an extended, porous framework structure with strong optical absorption, high surface area (up to 150 m2/g), and excellent aqueous stability. Using [Ru(bpy)3]2+ as the light-harvesting antenna, the chalcogels are capable of photocatalytically producing hydrogen from mixed aqueous solutions and are stable under constant illumination over a period of at least 3 weeks. We also present improved hydrogen yields in the context of the energy landscape of the chalcogels.
Co-reporter:Jonathan W. Hennek ; Myung-Gil Kim ; Mercouri G. Kanatzidis ; Antonio Facchetti ;Tobin J. Marks
Journal of the American Chemical Society 2012 Volume 134(Issue 23) pp:9593-9596
Publication Date(Web):May 24, 2012
DOI:10.1021/ja303589v
We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (TFT) semiconductor. Amorphous and polycrystalline IYO films were grown via a low-temperature solution process utilizing exothermic “combustion” precursors. Precursor transformation and the IYO films were analyzed by differential thermal analysis, thermogravimetric analysis, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and optical transmission, which reveal efficient conversion to the metal oxide lattice and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit electron mobilities of 7.3 cm2 V–1 s–1 (Tanneal = 300 °C) and 5.0 cm2 V–1 s–1 (Tanneal = 250 °C) for 2 V operation.
Co-reporter:Daniel P. Shoemaker ; Duck Young Chung ; J. F. Mitchell ; Travis H. Bray ; L. Soderholm ; Peter J. Chupas
Journal of the American Chemical Society 2012 Volume 134(Issue 22) pp:9456-9463
Publication Date(Web):May 14, 2012
DOI:10.1021/ja303047e
Rational exploratory synthesis of new materials requires routes to discover novel phases and systematic methods to tailor their structures and properties. Synthetic reactions in molten fluxes have proven to be an excellent route to new inorganic materials because they promote diffusion and can serve as an additional reactant, but little is known about the mechanisms of compound formation, crystal precipitation, or behavior of fluxes themselves at conditions relevant to synthesis. In this study we examine the properties of a salt flux system that has proven extremely fertile for growth of new materials: the potassium polysulfides spanning K2S3 and K2S5, which melt between 302 and 206 °C. We present in situ Raman spectroscopy of melts between K2S3 and K2S5 and find strong coupling between n in K2Sn and the molten local structure, implying that the Sn2– chains in the crystalline state are mirrored in the melt. In any reactive flux system, K2Sn included, a signature of changing species in the melt implies that their evolution during a reaction can be characterized and eventually controlled for selective formation of compounds. We use in situ X-ray total scattering to obtain the pair distribution function of molten K2S5 and model the length of Sn2– chains in the melt using reverse Monte Carlo simulations. Combining in situ Raman and total scattering provides a path to understanding the behavior of reactive media and should be broadly applied for more informed, targeted synthesis of compounds in a wide variety of inorganic fluxes.
Co-reporter:In Chung ; Jung-Hwan Song ; Jino Im ; John Androulakis ; Christos D. Malliakas ; Hao Li ; Arthur J. Freeman ; John T. Kenney
Journal of the American Chemical Society 2012 Volume 134(Issue 20) pp:8579-8587
Publication Date(Web):May 11, 2012
DOI:10.1021/ja301539s
CsSnI3 is an unusual perovskite that undergoes complex displacive and reconstructive phase transitions and exhibits near-infrared emission at room temperature. Experimental and theoretical studies of CsSnI3 have been limited by the lack of detailed crystal structure characterization and chemical instability. Here we describe the synthesis of pure polymorphic crystals, the preparation of large crack-/bubble-free ingots, the refined single-crystal structures, and temperature-dependent charge transport and optical properties of CsSnI3, coupled with ab initio first-principles density functional theory (DFT) calculations. In situ temperature-dependent single-crystal and synchrotron powder X-ray diffraction studies reveal the origin of polymorphous phase transitions of CsSnI3. The black orthorhombic form of CsSnI3 demonstrates one of the largest volumetric thermal expansion coefficients for inorganic solids. Electrical conductivity, Hall effect, and thermopower measurements on it show p-type metallic behavior with low carrier density, despite the optical band gap of 1.3 eV. Hall effect measurements of the black orthorhombic perovskite phase of CsSnI3 indicate that it is a p-type direct band gap semiconductor with carrier concentration at room temperature of ∼ 1017 cm–3 and a hole mobility of ∼585 cm2 V–1 s–1. The hole mobility is one of the highest observed among p-type semiconductors with comparable band gaps. Its powders exhibit a strong room-temperature near-IR emission spectrum at 950 nm. Remarkably, the values of the electrical conductivity and photoluminescence intensity increase with heat treatment. The DFT calculations show that the screened-exchange local density approximation-derived band gap agrees well with the experimentally measured band gap. Calculations of the formation energy of defects strongly suggest that the electrical and light emission properties possibly result from Sn defects in the crystal structure, which arise intrinsically. Thus, although stoichiometric CsSnI3 is a semiconductor, the material is prone to intrinsic defects associated with Sn vacancies. This creates highly mobile holes which cause the materials to appear metallic.
Co-reporter:Li-Dong Zhao ; Jiaqing He ; Chun-I Wu ; Timothy P. Hogan ; Xiaoyuan Zhou ; Ctirad Uher ; Vinayak P. Dravid
Journal of the American Chemical Society 2012 Volume 134(Issue 18) pp:7902-7912
Publication Date(Web):April 13, 2012
DOI:10.1021/ja301772w
We report high thermoelectric performance in nanostructured p-type PbS, a material consisting of highly earth abundant and inexpensive elements. The high level of Na doping switched intrinsic n-type PbS to p-type and substantially raised the power factor maximum for pure PbS to ∼9.0 μW cm–1 K–2 at >723 K using 2.5 at. % Na as the hole dopant. Contrary to that of PbTe, no enhancement in the Hall coefficient occurs at high temperature for heavily doped p-type PbS, indicating a single band model and no heavy hole band. We also report that the lattice thermal conductivity of PbS can be greatly reduced by adding SrS or CaS, which form a combination of a nanostructured/solid solution material as determined by transmission electron microscopy. We find that both nanoscale precipitates and point defects play an important role in reducing the lattice thermal conductivity, but the contribution from nanoscale precipitates of SrS is greater than that of CaS, whereas the contribution from point defects in the case of CaS is greater than that of SrS. Theoretical calculations of the lattice thermal conductivity based on the modified Callaway model reveal that both nanostructures and point defects (solid solution) effectively scatter phonons in this system. The lattice thermal conductivity at 723 K can be reduced by ∼50% by introducing up to 4.0 at. % of either SrS or CaS. As a consequence, ZT values as high as 1.22 and 1.12 at 923 K can be achieved for nominal Pb0.975Na0.025S with 3.0 at. % SrS and CaS, respectively. No deterioration was observed after a 15 d annealing treatment of the samples, indicating the excellent thermal stability for these high performance thermoelectrics. The promising thermoelectric properties of nanostructured PbS point to a robust low cost alternative to other high performance thermoelectric materials.
Co-reporter:Ronald B. Soriano ; Christos D. Malliakas ; Jinsong Wu
Journal of the American Chemical Society 2012 Volume 134(Issue 6) pp:3228-3233
Publication Date(Web):February 2, 2012
DOI:10.1021/ja211087q
We demonstrate the synthesis of semiconductor Pb2–xSnxS2 nanocrystals with a cubic rock salt crystal structure in a composition range where this structure is unstable in the bulk. The cubic Pb2–xSnxS2 nanocrystals were prepared using a modified hot injection colloidal synthetic route. The x value is in the range 0.40 < x < 1. Even though these compositions lie in a region of the PbS–SnS phase diagram where no single phase exists, and despite the fact that PbSnS2 is a distorted orthorhombic phase, the Pb2–xSnxS2 nanocrystals are single phase solid solutions with cubic NaCl-type structure. Experimental evidence for this derives from powder X-ray diffraction (PXRD), electron diffraction, and pair distribution function (PDF) analysis. Elemental compositions determined using scanning transmission electron microscopy/energy dispersive spectroscopy (STEM/EDS), inductively coupled plasma-atomic emission spectroscopy (ICP-AES), and electron energy loss spectroscopy (EELS) reveal a composition close to the nominal ones. The band gaps of the Pb2–xSnxS2 nanocrystals (0.52–0.57 eV) are blue-shifted by quantum confinement relative to that of the hypothetical cubic PbSnS2 phase which density functional theory (DFT) calculations show to be much narrower (0.2 eV) than in the case of orthorhombic PbSnS2 (1.1 eV). The Pb2–xSnxS2 nanocrystals exhibit a well-defined band gap in the near-IR region and are stable up to ∼300 °C above which they phase separate into cubic PbS and orthorhombic α-SnS.
Co-reporter:Hao Li, Christos D. Malliakas, Zhifu Liu, John A. Peters, Hosub Jin, Collin D. Morris, Lidong Zhao, Bruce W. Wessels, Arthur J. Freeman, and Mercouri G. Kanatzidis
Chemistry of Materials 2012 Volume 24(Issue 22) pp:4434
Publication Date(Web):November 12, 2012
DOI:10.1021/cm302838v
The new layered compound CsHgInS3 was synthesized using solid state and flux synthesis techniques. The compound is a semiconductor and shows promising properties for X-ray and γ-ray detection. It features a layered structure that crystallizes in the monoclinic space group C2/c with cell parameters: a = 11.2499(7) Ǻ, b = 11.2565(6) Ǻ, c = 22.146(1) Ǻ, β = 97.30(5)°, V = 2781.8(4) Ǻ3, and Z = 8. CsHgInS3 is isostructural to Rb2Cu2Sn2S6, where the Hg, In, and Cs atoms occupy the Cu, Sn, and Rb sites, respectively. Large single crystals with dimension up to 5 mm were grown with a vertical Bridgman method as well as a horizontal traveling heater method. CsHgInS3 has a γ-ray attenuation length comparable to commercial Cd1–xZnxTe and a band gap value of 2.30 eV. The electrical resistivity of CsHgInS3 is anisotropic with values of 98 GΩ cm and 0.33 GΩ cm perpendicular and parallel to the (001) plane, respectively. The mobility-lifetime product (μτ) of electrons and holes estimated from photoconductivity measurements on the as-grown crystals were (μτ)e = 3.6 × 10–5 cm2 V–1 and (μτ)h = 2.9 × 10–5 cm2 V–1, respectively. Electronic structure calculations at the Density Functional Theory level were performed based on the refined crystal structure of CsHgInS3 and show a direct gap with the conduction band near the Fermi level being highly dispersive, suggesting a relatively small carrier effective mass for electrons.Keywords: chalcogenide; crystal growth; semiconductors; X-ray detection;
Co-reporter:Kyriaki Polychronopoulou, Christos D. Malliakas, Jiaqing He, and Mercouri G. Kanatzidis
Chemistry of Materials 2012 Volume 24(Issue 17) pp:3380
Publication Date(Web):August 23, 2012
DOI:10.1021/cm301444p
Porous chalcogels with tunable compositions of CoxM1–xMoS4 and NixM1–xMoS4, where M = Pd2+, Pb2+, Cd2+, Bi3+, or Cr3+ and x = 0.3–0.7, were synthesized by metathesis reactions between the metal ions and MoS42–. Solvent exchange, counterion removal and CO2 supercritical drying led to the formation of aerogels. All chalcogels exhibited high surface areas (170–510 m2/g) and pore volumes in the 0.56–1.50 cm3/g range. Electron microscopy coupled with nitrogen adsorption measurements suggest the presence of both mesoporosity (2 nm < d < 50 nm) and macroporosity (d > 50 nm, where d is the average pore size). Pyridine adsorption corroborated for the acid character of the aerogels. We present X-ray photoelectron spectroscopic and X-ray scattering evidence that the [MoS4]2– unit does not stay intact when bound to the metals in the chalcogel structure. The Mo6+ species undergoes redox reactions during network assembly, giving rise to Mo4+/5+-containing species where the Mo is bound to sulfide and polysulfide ligands. The chalcogels exhibit high adsorption selectivities for CO2 and C2H6 over H2, N2, and CH4 whereas specific compositions exhibited among the highest CO2 enthalpy of adsorption reported so far for a porous material (up to 47 kJ/mol). The Co-Pb-MoS4 and Co-Cr-MoS4 chalcogels exhibited a 2-fold to 4-fold increase in CO2/H2 selectivity compared to ternary CoMoS4 chalcogels.Keywords: aerogels; chalcogenides; gas adsorption; porosity;
Co-reporter:Duck Young Chung, Ctirad Uher, and Mercouri G. Kanatzidis
Chemistry of Materials 2012 Volume 24(Issue 10) pp:1854
Publication Date(Web):April 23, 2012
DOI:10.1021/cm300490v
The solid solutions of CsBi4Te6, a high ZT material at a low temperature region, with Sb and Se were synthesized with general formulas CsBi4-xSbxTe6 and CsBi4Te6-ySey. The introduction of Sb and Se in the lattice of CsBi4Te6 is possible but only to a limited extent. The Sb and Se atoms substituted are not uniformly distributed over all crystallographic sites but display particular site preferences. The structure of new Sb/Bi solid solutions retains the original framework of CsBi4Te6 composed of NaCl-type Bi/Te slabs interconnected by characteristic Bi–Bi bonds and Cs atoms located in the interlayer space. A structurally modified phase in Se/Te solid solutions was found from the reactions targeted for 0.2 < y < 2.4 with the formula of CsBi5Te7.5-ySey (or Cs2Bi10Q15, (Q = Se, Te)). The new structure is constructed by the same structural motif with an extended Bi/Te slab (29 Å) compared to that in CsBi4Te6 (23 Å). The CsBi5Te7.5-ySey possesses Bi/Te slabs that extend by an additional “Bi2Te3” unit compared to the structure of CsBi4Te6, which implies the existence of a phase homology of compounds with the adjustable parameter being the width of the Bi/Q slab. In the reactions targeted for the compounds with higher y, a new phase CsBi5Te3.6Se4.4 with a different type of framework was found. The electrical conductivity and thermopower for the selected samples show p-type conduction with metallic behavior. The room temperature values measured are in the range of 300–1100 S/cm and 100–150 μV/K for Sb-substituted samples and 20–500 S/cm and 70–140 μV/K for Se-substituted samples, respectively. Thermal conductivities of these samples are in the range of 0.9–1.2 W/m·K at room temperature. Tailoring the transport behavior of these materials for thermoelectric applications may be achieved by doping, as is possible for the parent compound CsBi4Te6.Keywords: chalcogenide; crystal growth; electronic materials; homologous series; narrow bandgap semiconductors;
Co-reporter:Alexandros P. Katsoulidis, Jiaqing He, and Mercouri G. Kanatzidis
Chemistry of Materials 2012 Volume 24(Issue 10) pp:1937
Publication Date(Web):May 9, 2012
DOI:10.1021/cm300696g
Monolithic aerogels of polymeric organic framework (Mon-POF) with a high density of OH functional groups were synthesized through solvothermal polymerization of terephthalaldehyde and 1,5-dihydroxynaphthalene. This POF material presents high surface area of 1230 m2 g–1 having micro-, meso-, macropores, and low bulk density of 0.15 g cm–3. The evolution of the porous properties is controlled with the polymerization rate. Mon-POF is stable under acidic and basic conditions. The presence of high number of OH functional groups provides the monolith with ion-exchange properties as well as reducing properties. The Mon-POF adsorbs Ag+ from aqueous solution to deposit Ag nanoparticles into the pores at a high loading content ∼25 wt % of the composite material. The Ag loaded monolith captures significant amount of I2 vapor and fixes it effectively in the form of β-AgI.Keywords: Ag nanoparticles; functional porous polymer; iodine capture; monolith;
Co-reporter:Alexandros P. Katsoulidis and Mercouri G. Kanatzidis
Chemistry of Materials 2012 Volume 24(Issue 3) pp:471
Publication Date(Web):January 19, 2012
DOI:10.1021/cm202578k
Mesoporous polymeric organic frameworks (mesoPOF)s have been synthesized through surfactant mediated polymerization of phlorglucinol (1,3,5-trihydroxybenzene) and terephthalaldehyde under solvothermal conditions. The materials contain bound surfactant and exhibit hydrophobic properties. The mesoPOFs present high surface areas up to 1000 m2 g–1 and have pores of several size ranges from micropores to large mesopores depending on the amount of surfactant used. The adsorption uptakes of CO2, C2H6, and CH4 measured at 273 K at 1 bar are linearly correlated to the micropore volume. The mesoPOFs display high adsorption selectivity of C2H6 over CH4 by a factor of 40, and this property is dictated by their pore diameter.Keywords: adsorption selectivity; hydrophobic materials; mesoporous polymers; phloroglucinol; templated synthesis;
Co-reporter:Christos D. Malliakas, Jiyong Yao, Daniel M. Wells, Geng Bang Jin, S. Skanthakumar, Eun Sang Choi, Mahalingam Balasubramanian, L. Soderholm, Donald E. Ellis, Mercouri G. Kanatzidis, and James A. Ibers
Inorganic Chemistry 2012 Volume 51(Issue 11) pp:6153-6163
Publication Date(Web):May 14, 2012
DOI:10.1021/ic300172k
Black single crystals of A6Cu12U2S15 (A = K, Rb, Cs) have been synthesized by the reactive flux method. These isostructural compounds crystallize in the cubic space group Ia3̅d at room temperature. The structure comprises a three-dimensional framework built from US6 octahedra and CuS3 trigonal planar units with A cations residing in the cavities. There are no S–S bonds in the structure. To elucidate the oxidation state of U in these compounds, various physical property measurements and characterization methods were carried out. Temperature-dependent electrical resistivity measurement on a single crystal of K6Cu12U2S15 showed it to be a semiconductor. These three A6Cu12U2S15 (A = K, Rb, Cs) compounds all exhibit small effective magnetic moments, < 0.58 μB/U and band gaps of about 0.55(2) eV in their optical absorption spectra. From X-ray absorption near edge spectroscopy (XANES), the absorption edge of A6Cu12U2S15 is very close to that of UO3. Electronic band structure calculations at the density functional theory (DFT) level indicate a strong degree of covalency between U and S atoms, but theory was not conclusive about the formal oxidation state of U. All experimental data suggest that the A6Cu12U2S15 family is best described as an intermediate U5+/U6+ sulfide system of (A+)6(Cu+)12(U5+)2(S2–)13(S–)2 and (A+)6(Cu+)12(U6+)2(S2–)15.
Co-reporter:Tarun K. Bera
Inorganic Chemistry 2012 Volume 51(Issue 7) pp:4293-4299
Publication Date(Web):March 13, 2012
DOI:10.1021/ic202781c
The reactivity of europium with As species in Lewis basic alkali-metal polysulfide fluxes was investigated along with compound formation and the As3+/As5+ interplay vis-à-vis changes in the flux basicity. The compound Na2EuAs2S5 containing trivalent As3+ is stabilized from an arsenic-rich polysulfide flux. It crystallizes in the monoclinic centrosymmetric space group P21/c. Na2EuAs2S5 has [As2S5]4– units, built of corner sharing AsS3 pyramids, which are coordinated to Eu2+ ions to give a two-dimensional (2D) layered structure. A sodium polysulfide flux with comparatively less arsenic led to the As5+ containing compounds NaEuAsS4 (orthorhombic, Ama2) and Na4Eu(AsS4)2 (triclinic, P1) depending on Na2S/S ratio. The NaEuAsS4 and Na4Eu(AsS4)2 have a three-dimensional (3D) structure built of [AsS4]3– tetrahedra coordinated to Eu2+ ions. All compounds are semiconductors with optical energy gaps of ∼2 eV.
Co-reporter:Santanu Banerjee, Christos D. Malliakas, and Mercouri G. Kanatzidis
Inorganic Chemistry 2012 Volume 51(Issue 21) pp:11562-11573
Publication Date(Web):October 9, 2012
DOI:10.1021/ic301456m
The layered compounds KSnPS4 (1), RbSnPS4 (2), and CsSnPS4 (3) were synthesized using the chalcophosphate flux technique at high temperature and are rare examples of divalent Sn(II) thiophosphates. Orange polyhedral crystals of compound 1 crystallize in the monoclinic space group P21/c with a = 6.6673(13) Å, b = 11.9697(24) Å, c = 8.7604(18), and β=127.347(8)° in a 2-dimensional layered structure. Compound 2 is isostructural to 1. Yellow block shaped crystals of compound 3 crystallize in the monoclinic superspace group P21(αβ0)0 with a commensurate q-vector at 1/4a* + 1/4c* with a = 18.0477(14) Å, b = 6.2021(5) Å, and c = 6.8415(5) Å. The structure of all three compounds contains SnS3 pyramids, which is an extremely rare solid state chalcogenide coordination environment. All three compounds are semiconductors having well-defined band-gaps between 2.0 and 2.2 eV. The compounds are congruently melting and can be obtained as glasses by rapid quenching of the melt, which subsequently crystallize upon heating.
Co-reporter:Sebastian C. Peter and Sumanta Sarkar and Mercouri G. Kanatzidis
Inorganic Chemistry 2012 Volume 51(Issue 20) pp:10793-10799
Publication Date(Web):September 24, 2012
DOI:10.1021/ic301197w
The intermetallic compound Yb2AuGe3 was synthesized from indium flux. Yb2AuGe3 crystallizes in the orthorhombic Ca2AgSi3-type structure which is an ordered superstructure of the AlB2 structure type. The structure was refined in the Fmmm space group with lattice parameters a = 8.5124(17) Å, b = 14.730(3) Å, c = 8.4995(17) Å. Temperature-dependent powder X-ray diffraction studies show that Yb2AuGe3 undergoes a phase transition from orthorhombic to hexagonal upon heating above 773 K. The compound shows weak paramagnetism that derives from a combination of Curie and Pauli paramagnetism with a magnetic moment value of 0.33(2) μB/Yb atom. Magnetic ordering was not observed down to 2 K. Yb2AuGe3 is metallic, and at low temperature the resistivity varies as T2, indicating possible Fermi liquid behavior. Heat capacity measurements suggest that Yb2AuGe3 is possibly a moderate heavy fermion system.
Co-reporter:Zohreh Hassanzadeh Fard
Inorganic Chemistry 2012 Volume 51(Issue 15) pp:7963-7965
Publication Date(Web):July 17, 2012
DOI:10.1021/ic301276y
We show that K2ZnSn3S8 is a phase-change system that exhibits tristability. Kinetic and thermodynamic forms of different compounds in the K/Zn/Sn/S system have been synthesized and thoroughly characterized. We report an example where slow and rapid cooling of a melt of K2CO3/S/Sn/Zn leads to different kinetically stable products (crystalline layered α-K2ZnSn3S8, 1, and glassy K2ZnSn3S8, A, respectively). These forms convert to a thermodynamically stable compound (crystalline cubic β-K2ZnSn3S8, 2) upon annealing below their melting points. The band gaps of compounds 1, A, and 2 are 2.30, 2.15, and 2.55 eV, respectively.
Co-reporter:Hao Li, John A. Peters, Zhifu Liu, Maria Sebastian, Christos D. Malliakas, John Androulakis, Lidong Zhao, In Chung, Sandy L. Nguyen, Simon Johnsen, Bruce W. Wessels, and Mercouri G. Kanatzidis
Crystal Growth & Design 2012 Volume 12(Issue 6) pp:3250-3256
Publication Date(Web):May 9, 2012
DOI:10.1021/cg300385s
Cs2Hg6S7 is a promising compound for X-ray and γ-ray detection with a band gap of 1.63 eV. A new method is reported for the synthesis of Cs2Hg6S7, along with growth studies of large Cs2Hg6S7 crystals of dimensions up to several centimeters using the Bridgman method. Our growth technique gives reproducible crystals with high resistivity (106 ohm·cm). Crystals grown in this work exhibit figure of merit mobility lifetime (μτ) products comparable to commercial cadmium zinc telluride (CZT). The Cs2Hg6S7 crystals exhibit a strong photoluminescence signal at low temperature in the range 1.50–1.75 eV. The thermal properties of the crystal, including the thermal expansion coefficient and the thermal conductivity, have been characterized. The nature of defects affecting the charge transport properties in the as-grown Cs2Hg6S7 crystals is discussed. The noncentrosymmetric character of the tetragonal crystal structure (space group P42nm) gives rise to a nonlinear optical second harmonic generation response.
Co-reporter:Sebastian C. Peter, Christos D. Malliakas, Heinze Nakotte, Karunakar Kothapilli, Sudhindra Rayaprol, Arthur J. Schultz, Mercouri G. Kanatzidis
Journal of Solid State Chemistry 2012 Volume 187() pp:200-207
Publication Date(Web):March 2012
DOI:10.1016/j.jssc.2012.01.006
Yb3Ga7Ge3 and YbGa4Ge2 were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb3Ga7Ge3 was refined using X-ray and neutron diffraction data on selected single crystals. Yb3Ga7Ge3 crystallizes in the monoclinic space group C2/c with lattice constants a=12.2261(20) Å, b=10.7447(20) Å, c=8.4754(17) Å and β=110.288(30)° (neutron diffraction data). The crystal structure of Yb3Ga7Ge3 is an intergrowth of planar layers of YbGaxGey and puckered layers of (Ge)n. YbGa4Ge2 crystallizes in a modified PuGa6 structure type in the tetragonal polar space group I4cm with lattice constants a=b=5.9874(6) Å and c=15.1178(19) Å. The structure of YbGa4Ge2 is an intergrowth of puckered Ga layers and puckered GaxGey layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity (ρ), magnetic susceptibility (χ) and specific heat (C) were measured for Yb3Ga7Ge3. No magnetic ordering was observed. It was found that at low temperatures, ρ varied as T2 and C∝T, indicating Fermi-liquid regime in Yb3Ga7Ge3 at low temperatures.Graphical abstractThe compounds Yb3Ga7Ge3 and YbGa4Ge2 are obtained from reactions of Yb and Ge in excess liquid gallium.Highlights► Yb3Ga7Ge3 and YbGa4Ge2 are two new polygallides. ► The crystal structure of Yb3Ga7Ge3 was established using neutron diffraction data. ► YbGa4Ge2 is one of the rare polar intermetallic compounds. ► The physical properties of Yb3Ga7Ge3 point to a Fermi-liquid regime at low temperature.
Co-reporter:In Chung, Jung-Hwan Song, Joon I. Jang, Arthur J. Freeman, Mercouri G. Kanatzidis
Journal of Solid State Chemistry 2012 Volume 195() pp:161-165
Publication Date(Web):November 2012
DOI:10.1016/j.jssc.2012.05.038
We report an integrated experimental and theoretical study of the two-dimensional polar selenogermanate compound Na2Ge2Se5, which exhibits strong nonlinear optical (NLO) second harmonic generation response in the visible and infrared region. The compound is type-I phase-matchable with a large SHG coefficient χ(2)≈290 pm V−1, which is the second highest among the phase-matchable NLO materials. It also performs as an NLO frequency mixer to produce radiation via difference frequency generation. The compound is optically transparent from the visible (0.521 μm) to the far IR (18.2 μm) and melts congruently. Ab initio density functional theory band structure calculations show that the unusually large second-order optical nonlinearity is attributed to the two-dimensional character of the crystal structure. Raman, IR and optical absorption spectroscopy, differential thermal analysis, NLO properties of derivatives of Na2Ge2Se4.55Te0.45 and Na2Ge1.64Sn0.36Se5 and thermal expansion behavior studies are also reported.Graphical AbstractNa2Ge2Se5 is a new second-order nonlinear optical material for IR applications. It is type-I phase-matchable with a large SHG coefficient χ(2)≈290 pm V−1, which is the second largest among the phase-matchable NLO materials.Highlights► Na2Ge2Se5 is a new second-order nonlinear optical material for IR applications.► It is type-I phase-matchable. ► Its SHG coefficient χ(2)≈290 pm V−1 is the second largest among the phase-matchable NLO materials. ► Its DFG performance allows the development of a multiple IR frequency source with tunability. ► Ab initio density functional theory band structure calculations show that the unusually large second-order optical nonlinearity is attributed to the 2-D character of the crystal structure.
Co-reporter:M.G. Kanatzidis, K.M. Paraskevopoulos
Journal of Solid State Chemistry 2012 Volume 193() pp:1
Publication Date(Web):September 2012
DOI:10.1016/j.jssc.2012.07.021
Co-reporter:Kanishka Biswas, Jiaqing He, Guoyu Wang, Shih-Han Lo, Ctirad Uher, Vinayak P. Dravid and Mercouri G. Kanatzidis  
Energy & Environmental Science 2011 vol. 4(Issue 11) pp:4675-4684
Publication Date(Web):06 Oct 2011
DOI:10.1039/C1EE02297K
We demonstrate that by endotaxially embedding nanocrystals of the alkaline earth tellurides CaTe or BaTe in PbTe doped with Na2Te heat carrying phonons can be strongly scattered with little effect on the power factor. An intriguing observation is that the insertion of CaTe in PbTe increases the solubility of Na2Te, thereby allowing high levels of carrier concentration. Powder X-ray diffraction patterns reveal that all samples crystallize in the NaCl-type structure without noticeable secondary phase, while scanning transmission electron microscopy (STEM) and transmission electron microscopy (TEM) demonstrate the presence of endotaxially coherent/semi-coherent nanostructures in the PbTe–CaTe/BaTe samples. We show that this is the principal factor for the very low thermal conductivity. Electron energy loss spectroscopy (EELS) confirms the presence of Ca in the nanoprecipitates. We present a comparison in the lattice thermal conductivity in going from nanocrystals of CaTe to SrTe to BaTe in PbTe. Temperature dependent Hall coefficient measurements of PbTe–CaTe materials suggest that the carrier population in the so-called heavy hole valence band in PbTe becomes important above 450 K and is responsible for the high power factors. The highest thermoelectric figure of merit, ZT, value achieved is ∼1.5 at 765 K for 6% CaTe containing sample, while 3% BaTe containing sample shows the ZT of ∼1.3 at 760 K.
Co-reporter:Maryam Shafaei-Fallah;Alexer Rothenberger;Alexros P. Katsoulidis;Jiaqing He;Christos D. Malliakas
Advanced Materials 2011 Volume 23( Issue 42) pp:4857-4860
Publication Date(Web):
DOI:10.1002/adma.201102006
Co-reporter:John Androulakis;Sebastian C. Peter;Hao Li;Christos D. Malliakas;John A. Peters;Zhifu Liu;Bruce W. Wessels;Jung-Hwan Song;Hosub Jin;Arthur J. Freeman
Advanced Materials 2011 Volume 23( Issue 36) pp:4163-4167
Publication Date(Web):
DOI:10.1002/adma.201102450
Co-reporter:Li-Dong Zhao ; Shih-Han Lo ; Jiaqing He ; Hao Li ; Kanishka Biswas ; John Androulakis ; Chun-I Wu ; Timothy P. Hogan ; Duck-Young Chung ; Vinayak P. Dravid
Journal of the American Chemical Society 2011 Volume 133(Issue 50) pp:20476-20487
Publication Date(Web):November 29, 2011
DOI:10.1021/ja208658w
Lead sulfide, a compound consisting of elements with high natural abundance, can be converted into an excellent thermoelectric material. We report extensive doping studies, which show that the power factor maximum for pure n-type PbS can be raised substantially to ∼12 μW cm–1 K–2 at >723 K using 1.0 mol % PbCl2 as the electron donor dopant. We also report that the lattice thermal conductivity of PbS can be greatly reduced by adding selected metal sulfide phases. The thermal conductivity at 723 K can be reduced by ∼50%, 52%, 30%, and 42% through introduction of up to 5.0 mol % Bi2S3, Sb2S3, SrS, and CaS, respectively. These phases form as nanoscale precipitates in the PbS matrix, as confirmed by transmission electron microscopy (TEM), and the experimental results show that they cause huge phonon scattering. As a consequence of this nanostructuring, ZT values as high as 0.8 and 0.78 at 723 K can be obtained for nominal bulk PbS material. When processed with spark plasma sintering, PbS samples with 1.0 mol % Bi2S3 dispersion phase and doped with 1.0 mol % PbCl2 show even lower levels of lattice thermal conductivity and further enhanced ZT values of 1.1 at 923 K. The promising thermoelectric properties promote PbS as a robust alternative to PbTe and other thermoelectric materials.
Co-reporter:Steven N. Girard ; Jiaqing He ; Xiaoyuan Zhou ; Daniel Shoemaker ; Christopher M. Jaworski ; Ctirad Uher ; Vinayak P. Dravid ; Joseph P. Heremans
Journal of the American Chemical Society 2011 Volume 133(Issue 41) pp:16588-16597
Publication Date(Web):September 8, 2011
DOI:10.1021/ja206380h
Thermoelectric heat-to-power generation is an attractive option for robust and environmentally friendly renewable energy production. Historically, the performance of thermoelectric materials has been limited by low efficiencies, related to the thermoelectric figure-of-merit ZT. Nanostructuring thermoelectric materials have shown to enhance ZT primarily via increasing phonon scattering, beneficially reducing lattice thermal conductivity. Conversely, density-of-states (DOS) engineering has also enhanced electronic transport properties. However, successfully joining the two approaches has proved elusive. Herein, we report a thermoelectric materials system whereby we can control both nanostructure formations to effectively reduce thermal conductivity, while concurrently modifying the electronic structure to significantly enhance thermoelectric power factor. We report that the thermoelectric system PbTe–PbS 12% doped with 2% Na produces shape-controlled cubic PbS nanostructures, which help reduce lattice thermal conductivity, while altering the solubility of PbS within the PbTe matrix beneficially modifies the DOS that allow for enhancements in thermoelectric power factor. These concomitant and synergistic effects result in a maximum ZT for 2% Na-doped PbTe–PbS 12% of 1.8 at 800 K.
Co-reporter:Benjamin D. Yuhas ; Chaiya Prasittichai ; Joseph T. Hupp
Journal of the American Chemical Society 2011 Volume 133(Issue 40) pp:15854-15857
Publication Date(Web):September 13, 2011
DOI:10.1021/ja205981v
Enzymes that catalytically transform small molecules such as CO, formate, or protons are naturally composed of transition metal cluster units bound into a larger superstructure. Artificial biomimetic catalysts are often modeled after the active sites but are typically molecular in nature. We present here a series of fully integrated porous materials containing Fe4S4 clusters, dubbed “biomimetic chalcogels”. We examine the effect of third metal cations on the electrochemical and electrocatalytic properties of the chalcogels. We find that ternary biomimetic chalcogels containing Ni or Co show increased effectiveness in transformations of carbon dioxide and can be thought of as solid-state analogues of NiFe or NiFeS reaction centers in enzymes.
Co-reporter:Sebastian C. Peter, Maria Chondroudi, Christos D. Malliakas, Mahalingam Balasubramanian, and Mercouri G. Kanatzidis
Journal of the American Chemical Society 2011 Volume 133(Issue 35) pp:13840-13843
Publication Date(Web):August 4, 2011
DOI:10.1021/ja204971n
The family of materials RE4TGe8 (RE = Yb, Gd; T = transition metal) exhibits directional zero thermal expansion (ZTE) via a process that is associated with the linking of planar square nets in the third dimension. The Ge square nets in these compounds exhibit commensurate long-range modulations similar to those observed in charge-density-wave compounds. The ZTE is manifested in the plane of the square nets from 10 to 300 K with negligible volume expansion below ∼160 K. The specific atomic arrangement in RE4TGe8 enables a Poisson-like mechanism that allows the structure to contract along one direction as it expands only slightly in the perpendicular direction.
Co-reporter:John Androulakis ; Iliya Todorov ; Jiaqing He ; Duck-Young Chung ; Vinayak Dravid ;Mercouri Kanatzidis
Journal of the American Chemical Society 2011 Volume 133(Issue 28) pp:10920-10927
Publication Date(Web):June 8, 2011
DOI:10.1021/ja203022c
We report promising thermoelectric properties of the rock salt PbSe–PbS system which consists of chemical elements with high natural abundance. Doping with PbCl2, excess Pb, and Bi gives n-type behavior without significantly perturbing the cation sublattice. Thus, despite the great extent of dissolution of PbS in PbSe, the transport properties in this system, such as carrier mobilities and power factors, are remarkably similar to those of pristine n-type PbSe in fractions as high as 16%. The unexpected finding is the presence of precipitates ∼2–5 nm in size, revealed by transmission electron microscopy, that increase in density with increasing PbS concentration, in contrast to previous reports of the occurrence of a complete solid solution in this system. We report a marked impact of the observed nanostructuring on the lattice thermal conductivity, as highlighted by contrasting the experimental values (∼1.3 W/mK) to those predicted by Klemens–Drabble theory at room temperature (∼1.6 W/mK). Our thermal conductivity results show that, unlike in PbTe, optical phonon excitations in PbSe–PbS systems contribute to heat transport at all temperatures. We show that figures of merit reaching as high as ∼1.2–1.3 at 900 K can be obtained, suggesting that large-scale applications with good conversion efficiencies are possible from systems based on abundant, inexpensive chemical elements.
Co-reporter:J. Q. He ; J. R. Sootsman ; L. Q. Xu ∣∣; S. N. Girard ; J. C. Zheng ∣∣; M. G. Kanatzidis ;V. P. Dravid
Journal of the American Chemical Society 2011 Volume 133(Issue 23) pp:8786-8789
Publication Date(Web):May 10, 2011
DOI:10.1021/ja2006498
The Pb- and Sb- dual nanostructured PbTe system exhibits anomalous electronic transport behavior wherein the carrier mobility first increases and then decreases with increase in temperature. By combining in situ transmission electron microscopy observations and theoretical calculations based on energy filtering of charge carriers, we propose a plausible mechanism of charge transport based on interphase potential that is mediated by interdiffusion between coexisting Pb and Sb precipitates. These findings promise new strategies to enhance thermoelectric figure of merit via dual and multinanostructuring of miscible precipitates.
Co-reporter:Benjamin D. Yuhas ; Amanda L. Smeigh ; Amanda P. S. Samuel ; Yurina Shim ; Santanu Bag ; Alexios P. Douvalis ; Michael R. Wasielewski
Journal of the American Chemical Society 2011 Volume 133(Issue 19) pp:7252-7255
Publication Date(Web):March 16, 2011
DOI:10.1021/ja111275t
Biological systems that can capture and store solar energy are rich in a variety of chemical functionalities, incorporating light-harvesting components, electron-transfer cofactors, and redox-active catalysts into one supramolecule. Any artificial mimic of such systems designed for solar fuels production will require the integration of complex subunits into a larger architecture. We present porous chalcogenide frameworks that can contain both immobilized redox-active Fe4S4 clusters and light-harvesting photoredox dye molecules in close proximity. These multifunctional gels are shown to electrocatalytically reduce protons and carbon disulfide. In addition, incorporation of a photoredox agent into the chalcogels is shown to photochemically produce hydrogen. The gels have a high degree of synthetic flexibility, which should allow for a wide range of light-driven processes relevant to the production of solar fuels.
Co-reporter:Simon Johnsen ; Jiaqing He ; John Androulakis ; Vinayak P. Dravid ; Iliya Todorov ; Duck. Y. Chung
Journal of the American Chemical Society 2011 Volume 133(Issue 10) pp:3460-3470
Publication Date(Web):February 18, 2011
DOI:10.1021/ja109138p
In situ nanostructuring in bulk thermoelectric materials through thermo-dynamic phase segregation has established itself as an effective paradigm for optimizing the performance of thermoelectric materials. In bulk PbTe small compositional variations create coherent and semicoherent nanometer sized precipitates embedded in a PbTe matrix, where they can impede phonon propagation at little or no expense to the electronic properties. In this paper the nanostructuring paradigm is for the first time extended to a bulk PbS based system, which despite obvious advantages of price and abundancy, so far has been largely disregarded in thermoelectric research due to inferior room temperature thermoelectric properties relative to the pristine fellow chalcogenides, PbSe and PbTe. Herein we report on the synthesis, microstructural morphology and thermoelectric properties of two phase (PbS)1−x(PbTe)xx = 0−0.16 samples. We have found that the addition of only a few percent PbTe to PbS results in a highly nanostructured material, where PbTe precipitates are coherently and semicoherently embedded in a PbS matrix. The present (PbS)1−x(PbTe)x nanostructured samples show substantial decreases in lattice thermal conductivity relative to pristine PbS, while the electronic properties are left largely unaltered. This in turn leads to a marked increase in the thermoelectric figure of merit. This study underlines the efficiency of the nanostructuring approach and strongly supports its generality and applicability to other material systems. We demonstrate that these PbS-based materials, which are made primarily from abundant Pb and S, outperform optimally n-type doped pristine PbTe above 770 K.
Co-reporter:Maryam Shafaei-Fallah ; Jiaqing He ; Alexander Rothenberger
Journal of the American Chemical Society 2011 Volume 133(Issue 5) pp:1200-1202
Publication Date(Web):January 7, 2011
DOI:10.1021/ja1089028
We present a promising approach in synthetic chalcogel chemistry that is extendable to a broad variety of inorganic spacers. Polychalcogenide aerogels with ion-exchange properties are demonstrated in cobalt polysulfide. The new materials show a broad range of pore sizes and high surface area of 483 m2/g.
Co-reporter:Simon Johnsen ; Zhifu Liu ; John A. Peters ; Jung-Hwan Song ; Sandy Nguyen ; Christos D. Malliakas ; Hosub Jin ; Arthur J. Freeman ; Bruce W. Wessels
Journal of the American Chemical Society 2011 Volume 133(Issue 26) pp:10030-10033
Publication Date(Web):June 15, 2011
DOI:10.1021/ja202540t
We report that the chalcohalide compound Tl6SeI4 is a promising material for efficient X-ray and γ-ray detection. This material has a higher figure of merit than the current state-of-the-art material for room-temperature operation, Cd0.9Zn0.1Te (CZT). We have synthesized high-quality single-crystalline wafers of Tl6SeI4 with detector-grade resistivities and good carrier transport of both electrons and holes. We demonstrate that pulse height spectra recorded using Co-57 radiation show an energy resolution matching that of a commercial CZT detector material.
Co-reporter:Indika U. Arachchige;Ronald Soriano;Christos D. Malliakas;Sergei A. Ivanov
Advanced Functional Materials 2011 Volume 21( Issue 14) pp:2737-2743
Publication Date(Web):
DOI:10.1002/adfm.201100633

Abstract

A facile method for the synthesis of crystalline and amorphous GeTe nanoparticles (NPs) using bis((trimethylsilyl)amido)germanium(II), Ge[N(SiMe3)2]2, and elemental tellurium dispersed in tri-n-octylphosphine (TOP) is reported. As synthesized, crystalline particles exhibit narrow dispersity at smaller sizes and tend to grow into anisotropic shapes with increasing reaction time (growth). Furthermore, crystalline GeTe NPs possess rhombohedral symmetry with absorption band energies in near IR region (0.76–0.86 eV). Amorphous GeTe particles prepared at low temperatures are nearly spherical in morphology and display amorphous-to-crystalline phase transition at 209–237 °C depending on their primary particle size. Detailed investigation of the local structure of the amorphous GeTe using pair distribution function (PDF) method reveals that it is closely related to that of the pressure- and temperature-stabilized orthorhombic GeTe.

Co-reporter:Simon Johnsen, Sebastian C. Peter, Sandy L. Nguyen, Jung-Hwan Song, Hosub Jin, Arthur J. Freeman, and Mercouri G. Kanatzidis
Chemistry of Materials 2011 Volume 23(Issue 19) pp:4375
Publication Date(Web):September 16, 2011
DOI:10.1021/cm2019857
We present the synthesis, crystal structures, and physical properties of Tl2Hg3Q4 (Q = S, Se, and Te). The incongruently melting Tl2Hg3Q4 crystals were grown in a TlxQ flux. These compounds are isostructural and crystallize in a monoclinic cell with a layered structure, adopting the space group C2/c with a = 11.493(2) Å, b = 6.6953(13) Å, c = 12.937(3) Å, β = 114.98(3)° for Tl2Hg3S4, a = 11.977(2) Å, b = 6.9264(14) Å, c = 13.203(3) Å, β = 116.36(3)° for Tl2Hg3Se4 and a = 12.648(3) Å, b = 7.3574(15) Å, c = 13.701(3) Å, β = 117.48(3)° for Tl2Hg3Te4. The structures feature infinite chains of [Hg3Q4]2–, which are linked into layers by charge balancing Tl atoms. The compounds have very high densities (>8.3 g/cm3) with experimentally determined band gaps of 2.05, 1.57, and 0.90 eV for Q = S, Se, and Te, respectively. Using the refined crystal structures, we performed detailed band structure calculations at the density functional theory (DFT) level, using the screened-exchange local density approximation (sx-LDA). The results indicate that the compounds are semiconductors with the sulfur analog, having an indirect band gap, and the selenium and tellurium analogs, having direct energy band gaps. There is strong Hg 6s and Tl 6p orbital character in the conduction band minimum, while the valence band maximum has predominantly chalcogen p state character mixed in with a Tl 6s contribution. The band structure calculations support the experimental observation of a narrowing of the band gap in the series Q = S, Se, and Te, which results from the increasing extension of the outermost chalcogen p orbitals.Keywords: cadmium telluride; chalcogenide; crystal growth; X-ray detector;
Co-reporter:Simon Johnsen, Zhifu Liu, John A. Peters, Jung-Hwan Song, Sebastian C. Peter, Christos D. Malliakas, Nam Ki Cho, Hosub Jin, Arthur J. Freeman, Bruce W. Wessels, and Mercouri G. Kanatzidis
Chemistry of Materials 2011 Volume 23(Issue 12) pp:3120
Publication Date(Web):May 31, 2011
DOI:10.1021/cm200946y
The wide-band-gap semiconductor thallium gallium selenide (TlGaSe2) is promising for X-ray and γ-ray detection. In this study, the synthesis and crystal growth of semiconducting TlGaSe2 was accomplished using a stoichiometric combination of TlSe, Ga, and Se and a modified Bridgman method. These large detector-grade crystals can be synthesized and cut to dimensions appropriate for a detector. The crystals have mirror-like cleaved surfaces and are transparent red, in agreement with a band gap of 1.95 eV observed in absorption measurements. Single-crystal X-ray diffraction refinements confirm that TlGaSe2 crystallizes in the monoclinic C2/c space group with a layered crystal structure consisting of planes of GaSe4 corner-sharing tetrahedra connected by weak Tl–Se bonds. Electronic band structure calculations made using the full-potential linearized augmented plane wave method with the screened-exchange local density approximation, including spin orbit coupling, indicate the unusual characteristic of the hole effective mass being lower than that of the electrons. Photoconductivity measurements on the grown TlGaSe2 crystals show mobility–lifetime (μτ) products of electrons and holes approaching the values of the state-of-the-art commercial material Cd0.9Zn0.1Te. The promising properties of this material system are confirmed by the ability of a TlGaSe2-based detector to show good signal response to X-rays and resolve Ag K radiation energetically.Keywords: chalcogenide; crystal growth; crystal growth; gamma-ray detector; photoconductivity; radiation detector; semiconductor; TlGaSe2;
Co-reporter:Youngtak Oh, Santanu Bag, Christos D. Malliakas, and Mercouri G. Kanatzidis
Chemistry of Materials 2011 Volume 23(Issue 9) pp:2447
Publication Date(Web):April 5, 2011
DOI:10.1021/cm2003462
Porous zinc tin sulfide aerogel materials were constructed by metathesis reactions between Zn(acac)2·H2O and tetrahedral thiostannate cluster salts containing discrete [SnS4]4-, [Sn2S6]4-, and [Sn4S10]4- units. Self-assembly reactions of the Zn2+ linker and anionic thiostannate clusters yielded polymeric random Zn/Sn/S networks with gelation properties. Supercritical drying of the gels and solvent/counterion removal resulted in a metal sulfur framework. Zn2SnxS2x+2 (x = 1, 2, 4) aerogels showed high surface areas (363−520 m2/g) and pore volumes (1.1−1.5 cm3/g), and wide bandgap energies (2.8−3.2 eV). Scanning and transmission electron microscopy studies show the pores are micro- (d < 2 nm), meso- (2 nm < d < 50 nm), and macro- (d > 50 nm) regions. The zinc chalcogenide aerogels also possess high affinities toward soft heavy metals and reversible absorption of strong electron-accepting molecules.Keywords: chalcogenides; gas absorption; gas separation; heavy metal removal; porous materials;
Co-reporter:Alexandros P. Katsoulidis and Mercouri G. Kanatzidis
Chemistry of Materials 2011 Volume 23(Issue 7) pp:1818
Publication Date(Web):March 16, 2011
DOI:10.1021/cm103206x
A new family of microporous polymeric organic frameworks (POF)s is described. The POFs are assembled from phlorglucinol (1,3,5-trihydroxybenzene) and several benzaldehyde derivatives under solvothermal conditions using Bakelite type chemistry of forming C−C bonds without any catalyst. The materials exhibit semiconductor-like optical absorption properties with energy gaps in the range of 1.5−2.5 eV. The new materials form as uniform, microporous, spherical particles and exhibit surface areas up to 917 m2 g−1. The micropores have a very uniform size as the gas adsorption isotherms of these amorphous materials are similar to those of crystalline microporous zeolites. The micropores are internally decorated with a large number of −OH reactive groups which are available for functionalization. The POFs capture as much as 18% of their mass of CO2 at atmospheric pressure which is significantly larger than other porous polymers including systems which exhibit much larger surface areas; sodium-functionalized POFs exhibit enhanced heat of adsorption for H2 of 9 kJ/mol compared to pristine POF at 8.3 kJ/mol.Keywords: gas separation; gas storage; H2 absorption; microporous polymer; porous materials;
Co-reporter:Maria Chondroudi ; Sebastian C. Peter ; Christos D. Malliakas ; Mali Balasubramanian ; Qing’An Li
Inorganic Chemistry 2011 Volume 50(Issue 4) pp:1184-1193
Publication Date(Web):January 19, 2011
DOI:10.1021/ic100975x
Yb3AuGe2In3 was obtained as large single crystals in high yield from reactions run in liquid indium. Single crystal X-ray diffraction data show that Yb3AuGe2In3 is an ordered variant of YbAuIn with lattice constants, a = b = 7.3153(8) Å and c = 4.4210(5) Å, and space group P6̅2m. The parent compound YbAuIn was also studied for comparison. YbAuIn crystallizes in the ZrNiAl structure type, hexagonal, P6̅2m space group with lattice parameters a = b = 7.7127(11) Å and c = 4.0294(8) Å. In Yb3AuGe2In3, Ge substitutes for one of the two Au positions in the ternary compound Yb3Au3In3. The structure can be described as alternating [Ge2In3] and [Yb3Au] slabs that stack along the c-axis. The magnetic susceptibility data follow a modified Curie−Weiss law. The effective magnetic moment μeff of 0.52 μB/Yb atom was deduced from the Curie constant and Curie−Weiss constant of θp = −1.5 K indicating antiferromagnetic interactions in Yb3AuGe2In3. X-ray absorption near edge spectroscopy (XANES) measurements indicate intermediate valency for Yb in both compounds. The metallic nature of both compounds was confirmed by the resistivity measurements. Specific heat data for Yb3AuGe2In3 and YbAuIn give an electronic γ term of 31 and 84 mJ/mol·K2, respectively, suggesting that the ternary analog is a “light” heavy fermion compound.
Co-reporter:In Chung
Inorganic Chemistry 2011 Volume 50(Issue 2) pp:412-414
Publication Date(Web):December 13, 2010
DOI:10.1021/ic101140r
K10Sn3(P2Se6)4 and Cs2SnP2Se6 stabilize the lower oxidation state of Sn2+. K10Sn3(P2Se6)4 crystallizes in the trigonal space group R3̅ with a = b = 24.1184(7) Å and c = 7.6482(2) Å at 100 K. Cs2SnP2Se6 crystallizes in P21/c with a = 10.1160(4) Å, b = 12.7867(5) Å, c = 11.0828(5) Å, and β = 94.463(3)° at 100(2) K. Electronic absorption spectra revealed band gaps of 1.82 eV for K10Sn3(P2Se6)4 and 2.06 eV for Cs2SnP2Se6. Solid-state magic-angle-spinning 31P NMR, UV−vis, Raman, and IR spectroscopy and thermal analysis studies of the compounds are reported.
Co-reporter:Collin D. Morris, Christos D. Malliakas, and Mercouri G. Kanatzidis
Inorganic Chemistry 2011 Volume 50(Issue 20) pp:10241-10248
Publication Date(Web):September 19, 2011
DOI:10.1021/ic201249w
The new germanium selenophosphates K4Ge4-xPxSe12 (1) and Rb6Ge2P2Se14 (2) are reported. The former is a one-dimensional metastable compound synthesized using the polychalcogenide flux method that crystallizes in the monoclinic space group P21/c with lattice parameters a = 6.7388(7) Å, b = 13.489(1) Å, c = 6.3904(6) Å, and β = 91.025(8)°. At a glance, a mixed Ge4+/P5+ tetrahedral site and disordered Se position are found among the corner sharing tetrahedra that make up the polymeric anion. After careful examination, the structure was found to be incommensurately modulated and a single q-vector of q = 0.4442(6)a* + 0.3407(6)c* was determined after annealing single crystals below their decomposition point for 30d. The latter compound contains the new discrete molecular anion [Ge2P2Se14]6– and crystallizes in P1̅ with lattice parameters a = 7.2463(8) Å, b = 9.707(1)Å, c = 11.987(1)Å, α = 79.516(9)°, β = 89.524(9)°, and γ = 68.281(9)°. Both compounds are semiconductors with band gaps of 1 and 2 being 1.9 eV and 2.2 eV, respectively.
Co-reporter:Arthur Mar;Julia Y. Chan;Raymond E. Schaak;Myung-Hwan Whangbo;Gordon J. Miller;Michael Shatruk
European Journal of Inorganic Chemistry 2011 Volume 2011( Issue 26) pp:
Publication Date(Web):
DOI:10.1002/ejic.201190075

Abstract

The front cover picture shows the clock tower, the “Campanile”, of Iowa State University where John Corbett did the ground-breaking research in polar intermetallics that forms the basis of his Viewpoint in this cluster issue. Superimposed on this background are structures and data to visualize the broad scope of topic. The complexity of structure is displayed by the ternary rare-earth cobalt gallides that contain interstitial atoms (top left, A. Mar et al.), a calcium-poor intermetallic phase of the Ca/Ni/Ge system (top right from the lab of T. Fässler), and a single crystal of a polymorph of thallium nickel gallide (bottom right, J. Chan et al.). The potentially general synthesis of colloidal nanoparticles – Au3Li from the lab of R. E. Schaak – is outlined mid left. The groups of M. H. Whangbo and G. Miller devote their contributions to the theoretical aspects of bonding (depicted top centre, the plots showing Au–Au bonding and antibonding interactions in Dy2Au2In and mid right, the effects of ionic interactions on the structural properties of isoelectronic intermetallic compounds, respectively). Representative of the range of properties discussed is the magnetic susceptibility of Yb5Ni4Ge10 (bottom left, M. G. Kanatzidis et al.). We thank the authors for the use of the graphics from their papers on the cover.

Co-reporter:Sebastian C. Peter;Sudhindra Rayaprol;Melanie C. Francisco
European Journal of Inorganic Chemistry 2011 Volume 2011( Issue 26) pp:3963-3968
Publication Date(Web):
DOI:10.1002/ejic.201100350

Abstract

The new compound Yb5Ni4Ge10 was obtained as single crystals in high yield from reactions run in liquid indium. Single-crystal X-ray diffraction data showed that it crystallizes in the Sc5Co4Si10 structure type in the tetragonal space group P4/mbm. The structure is a three-dimensional framework of [Ni4Ge10] atoms with voids filled by Yb atoms. The Ni and Ge atoms form pentagons, hexagons, and octagons along the ab one-dimensional plane, which are interconnected along the c axis via Ni–Ge–Ni zigzag chains. Magnetic measurements reveal that Yb5Ni4Ge10 crystals show paramagnetic behavior with a lack of long-range magnetic ordering down to 2 K. The magnetic susceptibility deviates from the Curie–Weiss law below 100 K, presumably because of crystal field effects from Yb3+ ions. In specific heat measurements, the compound exhibits non-Fermi-liquid-like behavior at low temperatures.

Co-reporter:Dr. In Chung;Myung-Gil Kim;Dr. Joon I. Jang;Dr. Jiaqing He; John B. Ketterson; Mercouri G. Kanatzidis
Angewandte Chemie 2011 Volume 123( Issue 46) pp:11059-11062
Publication Date(Web):
DOI:10.1002/ange.201103691
Co-reporter:Dr. In Chung;Dr. Kanishka Biswas;Dr. Jung-Hwan Song;Dr. John Androulakis;Dr. Konstantinos Chondroudis; Konstantinos M. Paraskevopoulos; Arthur J. Freeman; Mercouri G. Kanatzidis
Angewandte Chemie 2011 Volume 123( Issue 38) pp:8996-9000
Publication Date(Web):
DOI:10.1002/ange.201104050
Co-reporter:Dr. In Chung;Myung-Gil Kim;Dr. Joon I. Jang;Dr. Jiaqing He; John B. Ketterson; Mercouri G. Kanatzidis
Angewandte Chemie International Edition 2011 Volume 50( Issue 46) pp:10867-10870
Publication Date(Web):
DOI:10.1002/anie.201103691
Co-reporter:Dr. In Chung;Dr. Kanishka Biswas;Dr. Jung-Hwan Song;Dr. John Androulakis;Dr. Konstantinos Chondroudis; Konstantinos M. Paraskevopoulos; Arthur J. Freeman; Mercouri G. Kanatzidis
Angewandte Chemie International Edition 2011 Volume 50( Issue 38) pp:8834-8838
Publication Date(Web):
DOI:10.1002/anie.201104050
Co-reporter:Gerasimos S. Armatas and Mercouri G. Kanatzidis
Nano Letters 2010 Volume 10(Issue 9) pp:3330-3336
Publication Date(Web):August 10, 2010
DOI:10.1021/nl101004q
A series of hexagonal mesoporous germanium semiconductors with tunable wall thickness is reported. These nanostructures possess uniform pores of 3.1−3.2 nm, wall thicknesses from 1.3 to 2.2 nm, and large internal BET surface area in the range of 404−451 m2/g. The porous Ge framework of these materials is assembled from the templated oxidative self-polymerization of (Ge9)4− Zintl clusters. Total X-ray scattering analysis supports a model of interconnected deltahedral (Ge9)-cluster forming the framework and X-ray photoelectron spectroscopy indicates nearly zero-valence Ge atoms. We show the controllable tuning of the pore wall thickness and its impact on the energy band gap which increases systematically with diminishing wall thickness. Furthermore, there is room temperature photoluminescence emission which shifts correspondingly from 672 to 640 nm. The emission signal can be quenched via energy transfer with organic molecules such as pyridine diffusing into the pores.
Co-reporter:Steven N. Girard, Jiaqing He, Changpeng Li, Steven Moses, Guoyu Wang, Ctirad Uher, Vinayak P. Dravid and Mercouri G. Kanatzidis
Nano Letters 2010 Volume 10(Issue 8) pp:2825-2831
Publication Date(Web):July 26, 2010
DOI:10.1021/nl100743q
We show experimentally the direct reduction in lattice thermal conductivity as a result of in situ nanostructure generation within a thermoelectric material. Solid solution alloys of the high-performance thermoelectric PbTe−PbS 8% can be synthesized through rapid cooling and subsequent high-temperature activation that induces a spontaneous nucleation and growth of PbS nanocrystals. The emergence of coherent PbS nanostructures reduces the lattice thermal conductivity from ∼1 to ∼0.4 W/mK between 400 and 500 K.
Co-reporter:Santanu Banerjee ; Jodi M. Szarko ; Benjamin D. Yuhas ; Christos D. Malliakas ; Lin X. Chen
Journal of the American Chemical Society 2010 Volume 132(Issue 15) pp:5348-5350
Publication Date(Web):March 29, 2010
DOI:10.1021/ja1004653
The new semiconducting thiophosphate compounds KZrPS6, RbZrPS6, and CsZrPS6 exhibit red light emission at room temperature. The materials have longer photoluminescence lifetimes than most of the inorganic chalcogenide semiconductors. They can be solution processed into thin films for potential device fabrication.
Co-reporter:Kyunghan Ahn ; Mi-Kyung Han ; Jiaqing He ; John Androulakis ; Sedat Ballikaya ; Ctirad Uher ; Vinayak P. Dravid
Journal of the American Chemical Society 2010 Volume 132(Issue 14) pp:5227-5235
Publication Date(Web):March 17, 2010
DOI:10.1021/ja910762q
We explored the effect of Cd substitution on the thermoelectric properties of PbTe in an effort to test a theoretical hypothesis that Cd atoms on Pb sites of the rock salt lattice can increase the Seebeck coefficient via the formation of a resonance level in the density of states near the Fermi energy. We find that the solubility of Cd is less than previously reported, and CdTe precipitation occurs to create nanostructuring, which strongly suppresses the lattice thermal conductivity. We present detailed characterization including structural and spectroscopic data, transmission electron microscopy, and thermoelectric transport properties of samples of PbTe−x% CdTe−0.055% PbI2 (x = 1, 3, 5, 7, 10), PbTe−1% CdTe−y% PbI2 (y = 0.03, 0.045, 0.055, 0.08, 0.1, 0.2), PbTe−5% CdTe−y% PbI2 (y = 0.01, 0.03, 0.055, 0.08), and PbTe−1% CdTe−z% Sb (z = 0.3, 0.5, 1, 1.5, 2, 3, 4, 5, 6). All samples follow the Pisarenko relationship, and no enhancement of the Seebeck coefficient was observed that could be attributed to a resonance level or a distortion in the density of states. A maximum ZT of ∼1.2 at ∼720 K was achieved for the PbTe−1% CdTe−0.055% PbI2 sample arising from a high power factor of ∼17 μW/(cm K2) and a very low lattice thermal conductivity of ∼0.5 W/(m K) at ∼720 K.
Co-reporter:Tarun K. Bera ; Joon I. Jang ; Jung-Hwan Song ; Christos D. Malliakas ; Arthur J. Freeman ; John B. Ketterson
Journal of the American Chemical Society 2010 Volume 132(Issue 10) pp:3484-3495
Publication Date(Web):February 19, 2010
DOI:10.1021/ja9094846
AAsSe2 (A = Li, Na) have been identified as a new class of polar direct-band gap semiconductors. These I−V−VI2 ternary alkali-metal chalcoarsenates have infinite single chains of (1/∞)[AsQ2−] derived from corner-sharing pyramidal AsQ3 units with stereochemically active lone pairs of electrons on arsenic. The conformations and packing of the chains depend on the structure-directing alkali metals. This results in at least four different structural types for the Li1−xNaxAsSe2 stoichoimetry (α-LiAsSe2, β-LiAsSe2, γ-NaAsSe2, and δ-NaAsSe2). Single-crystal X-ray diffraction studies showed an average cubic NaCl-type structure for α-LiAsSe2, which was further demonstrated to be locally distorted by pair distribution function (PDF) analysis. The β and γ forms have polar structures built of different (1/∞)[AsSe2−] chain conformations, whereas the δ form has nonpolar packing. A wide range of direct band gaps are observed, depending on composition: namely, 1.11 eV for α-LiAsSe2, 1.60 eV for LiAsS2, 1.75 eV for γ-NaAsSe2, 2.23 eV for NaAsS2. The AAsQ2 materials are soluble in common solvents such as methanol, which makes them promising candidates for solution processing. Band structure calculations performed with the highly precise screened-exchange sX-LDA FLAPW method confirm the direct-gap nature and agree well with experiment. The polar γ-NaAsSe2 shows very large nonlinear optical (NLO) second harmonic generation (SHG) response in the wavelength range of 600−950 nm. The theoretical studies confirm the experimental results and show that γ-NaAsSe2 has the highest static SHG coefficient known to date, 337.9 pm/V, among materials with band gaps larger than 1.0 eV.
Co-reporter:Nan Ding ; Gerasimos S. Armatas
Journal of the American Chemical Society 2010 Volume 132(Issue 19) pp:6728-6734
Publication Date(Web):April 28, 2010
DOI:10.1021/ja910506b
A mesostructured chalcogenide built from Chevrel-type clusters [(Re6Se6Br2)Br6T]2− linked by ditopic [Se3]2− anions and synthesized in the presence of a cationic surfactant template is reported. This new mesophase, h-C18PyReSeBr, exhibits remarkably well ordered hexagonal symmetry from which a reasonable structural model can be deduced on the basis of powder X-ray diffraction as well as pair distribution function (PDF) analysis. Small-angle X-ray scattering (SAXS) analysis shows that h-C18PyReSeBr possesses an enormous interfacial area of 477 m2/g between the inorganic framework and the guest surfactant cations, which is comparable to that of mesoporous silicas when heavy metals contained in the framework are taken into consideration. The framework of h-C18PyReSeBr exhibits great flexibility and responds dynamically to the extraframework cations via an ion-exchange process.
Co-reporter:Jiaqing He ; Joseph R. Sootsman ; Steven N. Girard ; Jin-Cheng Zheng ; Jianguo Wen ; Yimei Zhu ; Mercouri G. Kanatzidis ;Vinayak P. Dravid
Journal of the American Chemical Society 2010 Volume 132(Issue 25) pp:8669-8675
Publication Date(Web):June 4, 2010
DOI:10.1021/ja1010948
We have investigated the possible mechanisms of phonon scattering by nanostructures and defects in PbTe-X (X = 2% Sb, Bi, or Pb) thermoelectric materials systems. We find that among these three compositions, PbTe-2% Sb has the lowest lattice thermal conductivity and exhibits a larger strain and notably more misfit dislocations at the precipitate/PbTe interfaces than the other two compositions. In the PbTe-Bi 2% sample, we infer some weaker phonon scattering BiTe precipitates, in addition to the abundant Bi nanostructures. In the PbTe-Pb 2% sample, we also find that pure Pb nanoparticles exhibit stronger phonon scattering than nanostructures with Te vacancies. Within the accepted error range, the theoretical calculations of the lattice thermal conductivity in the three systems are in close agreement with the experimental measurements, highlighting the important role of misfit dislocations, nanoscale particles, and associated interfacial elastic strain play in phonon scattering. We further propose that such particle-induced local elastic perturbations interfere with the phonon propagation pathway, thereby contributing to further reduction in lattice thermal conductivity, and consequently can enhance the overall thermoelectric figure of merit.
Co-reporter:Melanie C. Francisco ; Christos D. Malliakas ; Paula M. B. Piccoli ; Matthias J. Gutmann ; Arthur J. Schultz
Journal of the American Chemical Society 2010 Volume 132(Issue 26) pp:8998-9006
Publication Date(Web):June 16, 2010
DOI:10.1021/ja1009986
The cubic intermetallic phase Y4Mn1−xGa12−yGey (x = 0−0.26, y = 0−4.0) has been isolated from a molten gallium flux reaction. It presents a rare example of a system where ferromagnetism can be induced by controlling the vacancies of the magnetic centers. The Y4PdGa12 type crystal structure is made up of a corner-sharing octahedral network of Ga and Ge atoms with Mn atoms at the centers of half the octahedra and Y atoms in the voids. At the highest Ge concentration, y = 4.0, the Mn site is nearly fully occupied, x = 0.05, and the samples are paramagnetic. At a lower Ge concentration, y = 1.0, Mn deficiency develops with x = 0.10. Surprisingly, strong ferromagnetism is observed with Tc = 223 K. When Ge is excluded, y = 0, Mn is substantially deficient at x = 0.26 and ferromagnetism is maintained with a Tc of ∼160 K. In addition, a 6-fold modulated superstructure appears owing to an ordered slab-like segregation of Mn atoms and vacancies. Corresponding bond distortions propagate throughout the octahedral Ga network. Structure−property relationships are examined with X-ray and neutron diffraction, magnetic susceptibility, and electrical resistivity measurements.
Co-reporter:Kanishka Biswas ; Qichun Zhang ; In Chung ; Jung-Hwan Song ; John Androulakis ; Arthur J. Freeman
Journal of the American Chemical Society 2010 Volume 132(Issue 42) pp:14760-14762
Publication Date(Web):October 4, 2010
DOI:10.1021/ja107483g
The Lewis acidic ionic liquid EMIMBr-AlCl3 (EMIM = 1-ethyl-3-methylimidazolium) allows a novel synthetic route to the semiconducting layered metal chalcogenides halide [Bi2Te2Br](AlCl4) and its Sb analogue. [Bi2Te2Br](AlCl4) is a direct band gap, strongly anisotropic semiconductor and consists of cationic infinite layers of [Bi2Te2Br]+ and [AlCl4]− anions inserted between the layers.
Co-reporter:Jiaqing He;Steven N. Girard;Vinayak P. Dravid
Advanced Functional Materials 2010 Volume 20( Issue 5) pp:764-772
Publication Date(Web):
DOI:10.1002/adfm.200901905

Abstract

The reduction of thermal conductivity, and a comprehensive understanding of the microstructural constituents that cause this reduction, represent some of the important challenges for the further development of thermoelectric materials with improved figure of merit. Model PbTe-based thermoelectric materials that exhibit very low lattice thermal conductivity have been chosen for this microstructure–thermal conductivity correlation study. The nominal PbTe0.7S0.3 composition spinodally decomposes into two phases: PbTe and PbS. Orderly misfit dislocations, incomplete relaxed strain, and structure-modulated contrast rather than composition-modulated contrast are observed at the boundaries between the two phases. Furthermore, the samples also contain regularly shaped nanometer-scale precipitates. The theoretical calculations of the lattice thermal conductivity of the PbTe0.7S0.3 material, based on transmission electron microscopy observations, closely aligns with experimental measurements of the thermal conductivity of a very low value, ∼0.8 W m−1 K−1 at room temperature, approximately 35% and 30% of the value of the lattice thermal conductivity of either PbTe and PbS, respectively. It is shown that phase boundaries, interfacial dislocations, and nanometer-scale precipitates play an important role in enhancing phonon scattering and, therefore, in reducing the lattice thermal conductivity.

Co-reporter:Christos B. Lioutas, Nikolaos Frangis, Iliya Todorov, Duck Young Chung, and Mercouri G. Kanatzidis
Chemistry of Materials 2010 Volume 22(Issue 19) pp:5630
Publication Date(Web):September 8, 2010
DOI:10.1021/cm102016j
The characterization and understanding of the presence of nanostructuring in bulk thermoelectric materials requires real space atomic level information. We report electron diffraction and high-resolution transmission electron microscopy studies of crystals of the system AgPb18SbSe20 (=18PbSe + AgSbSe2) which reveal that this system is nanostructured rather than a solid solution. Nanocrystals of varying sizes are found, endotaxially grown in the matrix of PbSe (phase A), and consist of two phases, a cubic one (phase B) and a tetragonal one (phase C). Well-defined coherent interfaces between the phases in the same nanocrystals are observed. On the basis of the results of combined electron crystallography techniques, we propose reasonable structural models for the phases B and C. There are significant differences in the nanostructuring chemistry between AgPb18SbSe20 and the telluride analog AgPb18SbTe20 (LAST-18).
Co-reporter:Prativa Pandey, Alexandros P. Katsoulidis, Ibrahim Eryazici, Yuyang Wu, Mercouri G. Kanatzidis and SonBinh T. Nguyen
Chemistry of Materials 2010 Volume 22(Issue 17) pp:4974
Publication Date(Web):August 3, 2010
DOI:10.1021/cm101157w
Imine-linked microporous polymer organic frameworks (POFs) were synthesized via Schiff base condensation between 1,3,5-triformylbenzene and several readily available diamine monomers. Our facile, one-pot approach results in quantitative yields of POFs with the flexibility to incorporate several functional groups in their pores for tuning the interaction of their surface with different guest molecules. Synthesized POFs exhibit high specific surface areas (up to 1500 m2 g−1) as well as high isosteric heats of H2 adsorption (up to 8.2 kJ mol−1).
Co-reporter:Kyunghan Ahn, Chang-Peng Li, Ctirad Uher and Mercouri G. Kanatzidis
Chemistry of Materials 2010 Volume 22(Issue 3) pp:876
Publication Date(Web):August 18, 2009
DOI:10.1021/cm901668h
The thermoelectric properties of the new compounds AgPbmLaTem+2 (m = 15, 18, 20, 25, 30, 35) were investigated in the temperature range of 300 to ∼720 K and compared to those of AgPb18MTe20 (M = Sb, Bi). All samples crystallize in the NaCl-type structure without noticeable secondary phase. The room-temperature electrical conductivities of the AgPbmLaTem+2 samples are >1700 S/cm, which are higher than the Sb or Bi analog. The Seebeck coefficient in the AgPbmLaTem+2 samples ranges from −60 μV/K at 300 K to −160 μV/K at 670 K and is much smaller than the Sb analog, but comparable to the Bi analog. A small Seebeck coefficient is consistent with a high electron concentration of the AgPbmLaTem+2 samples. The corresponding power factors (15−17 μW/(cm K2) at ∼670 K) of the AgPbmLaTem+2 samples are comparable to the Sb analog and higher than the Bi analog. The temperature dependent mobility of the La samples can be expressed through that of n-type degenerate PbTe samples. The derived room temperature lattice thermal conductivities of the AgPbmLaTem+2 samples are <1.4 W/(m K), which are higher than that of the Sb analog (∼0.8 W/(m K)) and are comparable to that of the Bi analog (∼1.2 W/(m K)). A ZT of ∼0.9 at ∼670 K was achieved for the AgPb25LaTe27.
Co-reporter:Pierre F. P. Poudeu, Aurélie Guéguen, Chun-I Wu, Tim Hogan and Mercouri G. Kanatzidis
Chemistry of Materials 2010 Volume 22(Issue 3) pp:1046
Publication Date(Web):September 15, 2009
DOI:10.1021/cm902001c
We demonstrate that the KPbmSbTe2+m system (PLAT-m for tellurium, antimony, lead potassium, m = 19−21) of materials exhibits high thermoelectric performance. Samples with compositions K1−xPbm+δSb1+γTem+2 were prepared using several combinations of x, δ, γ and m and their thermoelectric properties were investigated in the temperature range of 300 − 800 K. All K1−xPbm+δSb1+γTem+2 samples exhibited n-type conduction over the measured temperature range. Their lattice thermal conductivities were found to be significantly reduced when compared to PbTe and even AgPbmSbTem+2. For example, for K0.95Pb20Sb1.2Te22 a lattice thermal conductivity as low as 0.4 W/(m·K) was estimated at 650 K (based on a Lorenz number of 1.25 × 10−8 W·Ω/K2). High resolution transmission electron microscopy on several samples revealed a widely dispersed nanoscale particle with varying size and shape endotaxially embedded inside a PbTe-rich matrix which is believed to be responsible for the reduced lattice thermal conductivity of K1−xPbm+δSb1+γTem+2 materials. Because of their small size, the nanoinclusions are coherent with the matrix and therefore do not markedly degrade the electrical conductivity of the materials. As a result, very high figures of merit are achieved at high temperature for several compositions. For K0.95Pb20Sb1.2Te22, a maximum figure of merit ZT ∼ 1.6 was obtained around 750 K. This value is similar to that of n-type LAST-18 and is two times larger than that of the-state-of-the-art n-type PbTe.
Co-reporter:C. Peter Sebastian ; Christos D. Malliakas ; Maria Chondroudi ; Inga Schellenberg ; Sudhindra Rayaprol ; Rolf-Dieter Hoffmann ; Rainer Pöttgen
Inorganic Chemistry 2010 Volume 49(Issue 20) pp:9574-9580
Publication Date(Web):September 13, 2010
DOI:10.1021/ic101340a
The germanide Eu2AuGe3 was obtained as large single crystals in high yield from a reaction of the elements in liquid indium. At room temperature Eu2AuGe3 crystallizes with the Ca2AgSi3 type, space group Fmmm, an ordered variant of the AlB2 type: a = 857.7(4), b = 1485.5(10), c = 900.2(4) pm. The gold and germanium atoms build up slightly distorted graphite-like layers which consist of Ge6 and Au2Ge4 hexagons, leading to two different hexagonal-prismatic coordination environments for the europium atoms. Magnetic susceptibility data showed Curie−Weiss law behavior above 50 K and antiferromagnetic ordering at 11 K. The experimentally measured magnetic moment indicates divalent europium. The compound exhibits a distinct magnetic anisotropy based on single crystal measurements and at 5 K it shows a metamagnetic transition at ∼10 kOe. Electrical conductivity measurements show metallic behavior. The structural transition at 130 K observed in the single crystal data was very well supported by the conductivity measurements. 151Eu Mössbauer spectroscopic data show an isomer shift of −11.24 mm/s at 77 K, supporting the divalent character of europium. In the magnetically ordered regime one observes superposition of two signals with hyperfine fields of 26.0 (89%) and 3.5 (11%) T, respectively, indicating differently ordered domains.
Co-reporter:C. Peter Sebastian, James Salvador, Joshua B. Martin, and Mercouri G. Kanatzidis
Inorganic Chemistry 2010 Volume 49(Issue 22) pp:10468-10474
Publication Date(Web):October 20, 2010
DOI:10.1021/ic101502e
The intermetallic compounds YbAu2In4 and Yb2Au3In5 were obtained as single crystals in high yield from reactions run in liquid indium. Single crystal X-ray diffraction data of YbAu2In4 showed that it crystallizes as a new structure type in the monoclinic space group P21/m and lattice constants a = 7.6536(19) Å, b = 4.5424(11) Å, c = 9.591(2) Å and β = 107.838(4)°. The YbAu2In4 compound is composed of a complex [Au2In4]3− polyanionic network in which the rare-earth ions are embedded. Yb2Au3In5 crystallizes in the polar space group Cmc21 with the Y2Rh3Sn5 type structure and lattice constants a = 4.5351(9) Å, b = 26.824(5) Å, and c = 7.4641(15) Å. The gold and indium atoms define a complex three-dimensional [Au3In5] network with a broad range of Au−In (2.751(2) Å−3.0518(16) Å) and In−In (3.062(3) Å−3.3024(19) Å) distances. Magnetic susceptibility measurements of YbAu2In4 revealed a transition at 25 K. Below the transition, the susceptibility of YbAu2In4 follows Curie−Weiss behavior with an effective paramagnetic moment of 0.79 μB/Yb. Magnetic susceptibility measurements on Yb2Au3In5 show a mixed valent ytterbium and the magnetic moment within the linear region (<100 K) of 1.95 μB/Yb. Heat capacity data for YbAu2In4 and Yb2Au3In5 give Debye temperatures of 185 and 153 K, respectively.
Co-reporter:Alexander Rothenberger ; Maryam Shafaei-Fallah
Inorganic Chemistry 2010 Volume 49(Issue 21) pp:9749-9751
Publication Date(Web):October 8, 2010
DOI:10.1021/ic101627v
The new compounds Rb3(AlQ2)3(GeQ2)7 [Q = S (1), Se (2)] feature the 3D anionic open framework [(AlQ2)3(GeQ2)7]3− in which aluminum and germanium share tetrahedral coordination sites. Rb ions are located in channels formed by the connection of 8, 10, and 16 (Ge/Al)S4 tetrahedra. The isostructural sulfur and selenium derivatives crystallize in the space group P21/c. 1: a = 6.7537(3) Å, b = 37.7825(19) Å, c = 6.7515(3) Å, and β = 90.655(4)°. 2: a = 7.0580(5) Å, b = 39.419(2) Å, c = 7.0412(4) Å, β = 90.360(5)°, and Z = 2 at 190(2) K. The band gaps of the congruently melting chalcogenogermanates are 3.1 eV (1) and 2.4 eV (2).
Co-reporter:Sandy L. Nguyen ; Joon I. Jang ; John B. Ketterson
Inorganic Chemistry 2010 Volume 49(Issue 20) pp:9098-9100
Publication Date(Web):September 22, 2010
DOI:10.1021/ic1011346
The layered compounds RbAg2TeS6 and CsAg2TeS6 crystallize in the noncentrosymmetric space group P63cm, with a = 19.15 Å, c = 14.64 Å, and V = 4648 Å3 and a = 19.41 Å, c = 14.84 Å, and V = 4839 Å3, respectively. The structures are composed of neutral [Ag2TeS3] layers alternating with charge-balanced salt layers containing polysulfide chains of [S6]2− and alkali-metal ions. RbAg2TeS6 and CsAg2TeS6 are air- and water-stable, wide-band-gap semiconductors (Eg ∼ 2.0 eV) exhibiting nonlinear-optical second-harmonic generation.
Co-reporter:Collin D. Morris and Mercouri G. Kanatzidis
Inorganic Chemistry 2010 Volume 49(Issue 19) pp:9049-9054
Publication Date(Web):September 8, 2010
DOI:10.1021/ic101461w
We report five new discrete molecular arsenic-based chalcophosphates, K7As3(P2Se6)4 (1), K6As2(P2Se6)3 (2), Cs6As2(P2Se6)3 (3), and Cs5As(P2Q6)2 [Q = Se (4a) and S (4b)]. Each of the compounds contains unique complex anions comprised of common building blocks that have condensed to produce these anions. Phosphorus forms well-known [P2Q6]4− moieties in all of the compounds that are bridged by arsenic trigonal pyramids in 1 and 2 and distorted octahedra in 3, 4a, and 4b. Although 2 and 3 have the same molecular formula, the structural difference between the two salts is attributed to the size of the alkali metal. The influence of flux basicity also seems to play a role in the formation of the molecular anion in 4a and 4b, which has been observed with other trivalent main-group elements at the octahedral position but only with the highly basic cesium alkali metal as the counterion. All structures were determined by single-crystal X-ray diffraction and are discussed along with phase-purity powder X-ray diffraction, thermal analyses, electronic absorption, and Raman spectroscopy.
Co-reporter:Alexander Rothenberger ; Collin Morris
Inorganic Chemistry 2010 Volume 49(Issue 12) pp:5598-5602
Publication Date(Web):May 5, 2010
DOI:10.1021/ic100495b
The first discrete anionic indium thiophosphate complexes are reported. The structures of K6[In(PS4)1.5(PS5)1.5] (1), Rb6[In(PS4)(PS5)2] (2), and Cs6[In(PS4)1.5(PS5)1.5] (3) all contain an anionic moiety consisting of octahedrally coordinated indium surrounded by the thiophosphate anions [PS4]3− and the new [PS5]3− ion. The conformation and bonding of the unsymmetric chelate ligand [PS5]3− to indium give rise to different anions of the general formula [In(PS4)1+x(PS5)2−x]6− (x = 0, 0.5). The anionic moiety in K6[In(PS4)1.5(PS5)1.5] (1) consists of cocrystallizing λ-[In(PS4)2(PS5)]6− and Λλδ-[In(PS4)(PS5)2]6− anions in a ratio of 1:1 (and their enantiomers). In Rb6[In(PS4)(PS5)2] (2), no cocrystallizatzion of anions was observed, and only the Λλλ-[In(PS4)(PS5)2]6− anion (and its enantiomer) is present. Cs6[In(PS4)1.5(PS5)1.5] (3) shows the same disorder between [PS4]3− and [PS5]3− ions as in 1. In 3, however, the octahedrally coordinated indium atom and thiophosphate ligands form a Λδδ-[In(PS4)(PS5)2]6− anion cocrystallizing with δ-[In(PS4)2(PS5)]6−. Additionally, ordered Rb6[In(PS4)(PS5)2] (2) was characterized by 31P magic angle spinning NMR, Raman spectroscopy, UV−vis solid-state absorption spectroscopy, thermogravimetric analysis, differential thermal analysis, and energy dispersive X-ray analysis.
Co-reporter:In Chung, Daniel Holmes, David P. Weliky and Mercouri G. Kanatzidis
Inorganic Chemistry 2010 Volume 49(Issue 7) pp:3092-3094
Publication Date(Web):February 24, 2010
DOI:10.1021/ic902561h
The new compound Cs10P8Se20 features the heterotetracyclic [P3Se7]3− anion, a phosphorus-rich four-membered-ring species that possesses a P−P−P unit and formally P3+ and P4+ centers. It crystallizes in the orthorhombic space group Pnnm with a = 26.5456(7) Å, b = 8.0254(2) Å, c = 11.9031(4) Å, and Z = 2 at 100(2) K. The cyclic anion is cocrystallized with a [P2Se6]4− anion. Electronic absorption, Raman, Fourier transform infrared, and solid-state 31P NMR spectroscopy studies of Cs10P8Se20 are reported.
Co-reporter:Alexander Rothenberger ; Hsien-Hau Wang ; DuckYoung Chung
Inorganic Chemistry 2010 Volume 49(Issue 3) pp:1144-1151
Publication Date(Web):December 23, 2009
DOI:10.1021/ic902105j
The new thiophosphate salt K4In2(PS4)2(P2S6) (1), the selenophosphate salts K5In3(μ3-Se)(P2Se6)3 (2), K4In4(μ-Se)2(P2Se6)3 (3), and the mixed seleno-/thiophosphate salt K4In4(μ-Se)(P2S2.36Se3.64)3 (4) are described. For the first time, a structurally different outcome of a chalcophosphate reaction was observed when sulfur and selenium are mixed, for example, by the use of K2S/P2Se5/S/In instead of K2Se/P2Se5/Se/In or K2S/P2S5/S/In. In compounds 1−4 indium atoms exist in a variety coordination environments. While in 1, indium is octahedrally coordinated, in 2−4 tetrahedral, trigonal-bipyramidal, and octahedral coordination environments are found for indium atoms. This remarkable structural diversity possibly is a reason, why particularly indium chalcophosphate flux reactions often produce a large variety of compounds at intermediate temperatures. In the mixed seleno-/thiophosphate salt K4In4(μ-Se)(P2S2.36Se3.64)3 (4) most of the chalcogen sites around the tetrahedrally coordinated P atoms show mixed S/Se occupancy. There is, however, a preference for Se binding to In ions and S binding to potassium ions.
Co-reporter:C. Peter Sebastian, Mercouri G. Kanatzidis
Journal of Solid State Chemistry 2010 Volume 183(Issue 4) pp:878-882
Publication Date(Web):April 2010
DOI:10.1016/j.jssc.2010.02.003
The compound CeAu0.28Ge1.72 crystallizes in the ThSi2 structure type in the tetragonal space group I41/amd with lattice parameters a=b=4.2415(6) Å c=14.640(3) Å. CeAu0.28Ge1.72 is a polar intermetallic compound having a three-dimensional Ge/Au polyanion sub-network filled with Ce atoms. The magnetic susceptibility data show Curie–Weiss law behavior above 50 K. The compound orders ferromagnetically at ∼8 K with estimated magnetic moment of 2.48 μB/Ce. The ferromagnetic ordering is confirmed by the heat capacity data which show a rise at ∼8 K. The electronic specific heat coefficient (γ) value obtained from the paramagnetic temperature range 15–25 K is∼124(5) mJ/ mol K2. The entropy change due to the ferromagnetic transition is ∼4.2 J/mol K which is appreciably reduced compared to the value of R ln(2) expected for a crystal-field-split doublet ground state and/or Kondo exchange interactions.CeAu0.28Ge1.72 crystallizes in the ThSi2 structure type in the tetragonal space group I41/amd and orders ferromagnetically at ∼8 K.
Co-reporter:C. Peter Sebastian, Mercouri G. Kanatzidis
Journal of Solid State Chemistry 2010 Volume 183(Issue 9) pp:2077-2081
Publication Date(Web):September 2010
DOI:10.1016/j.jssc.2010.06.022
The new compound YbGe2.83 was obtained from the reaction of Yb and Ge in liquid indium. The crystal structure of YbGe2.83 adopts the trigonal, P3̄m1 space group with a=b=8.3657(12) Å and c=7.0469(14) Å. The structure of YbGe2.83 is a variant of the CaAl2Si2 structure type with ordered vacancies. Germanium atoms form double layers of puckered hexagons creating slabs that sandwich the Yb atoms. YbGe2.83 can be classified as a Zintl compound with the formula Yb(2+x)+(Ge2.83)(2+x)−. The deficiencies at the Ge sites cause a mixed/intermediate valent state of ytterbium (Yb2.35+). Valence bond sum calculations suggest an average valence of Yb ions in YbGe2.83 of 2.51 consistent with an intermediate valence compound.The new binary compound YbGe2.83 is a variant of the CaAl2Si2 structure type with ordered vacancies. Zintl formalism and valence bond sum calculations suggest intermediate valence of Yb ions in YbGe2.83.
Co-reporter:Indika U. Arachchige and Mercouri G. Kanatzidis
Nano Letters 2009 Volume 9(Issue 4) pp:1583-1587
Publication Date(Web):March 24, 2009
DOI:10.1021/nl8037757
We report the synthesis of a series of narrowly disperse Pb1−xSnxTe nanocrystals by employing a colloidal synthetic strategy. As synthesized nanocrystals are solid solutions with cubic NaCl-type structure and exhibit band energy gaps in the mid-IR region. We show that these ternary nanocrystals display qualitatively the same anomalous trend in band gaps as a function of x that is attributed to the band inversion phenomenon of the corresponding bulk materials; however unlike the bulk the band gap does not vanish at any Sn concentration but achieves a minimum of 0.28 eV for x = 0.67.
Co-reporter:Hyun Sung Kim ; Myung-Gil Kim ; Young-Geun Ha ; Mercouri G. Kanatzidis ; Tobin J. Marks ;Antonio Facchetti
Journal of the American Chemical Society 2009 Volume 131(Issue 31) pp:10826-10827
Publication Date(Web):July 15, 2009
DOI:10.1021/ja903886r
Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2 and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl3 and SnCl4 as the sources of In3+ and Sn4+, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures Ta ≤ 250 °C and afford devices with excellent electrical characteristics. The optimized [In3+]/[In3+ + Sn4+] molar ratio (0.7) and annealing temperature (Ta = 250 °C) afford TFTs exhibiting electron mobilities of ∼2 and ∼10−20 cm2 V−1 s−1 with SiO2 and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220 °C still exhibit electron mobilities of >0.2 cm2 V−1 s−1, which is encouraging for processing on plastic substrates.
Co-reporter:Qichun Zhang ; In Chung ; Joon I. Jang ; John B. Ketterson
Journal of the American Chemical Society 2009 Volume 131(Issue 29) pp:9896-9897
Publication Date(Web):July 6, 2009
DOI:10.1021/ja903881m
The new cation [Sb7S8Br2]3+ has a double-cubane structure and forms as the [AlCl4]− salt from the ionic liquid EMIMBr−AlCl3 (EMIM = 1-ethyl-3-methylimidazolium) at 165 °C. The compound is noncentrosymmetric with space group P212121 and exhibits second-harmonic and difference-frequency nonlinear optical response across a wide range of the visible and near-infrared regions.
Co-reporter:Christos D. Malliakas
Journal of the American Chemical Society 2009 Volume 131(Issue 20) pp:6896-6897
Publication Date(Web):May 6, 2009
DOI:10.1021/ja900091f
A double-superimposed charge density wave (CDW) distortion with modulation vectors oriented in the same direction observed in the square net of Cu0.63EuTe2 represents the first example of its kind among CDW materials with electronic Fermi surface instabilities.
Co-reporter:Manolis J. Manos
Journal of the American Chemical Society 2009 Volume 131(Issue 18) pp:6599-6607
Publication Date(Web):April 17, 2009
DOI:10.1021/ja900977p
The details of the ion-exchange properties of the layered sulfide material K2xMnxSn3−xS6 (x = 0.5−0.95) (KMS-1) with Cs+ and Rb+ cations are reported. X-ray photoelectron spectroscopy (XPS), elemental analyses, and powder and single-crystal diffraction studies revealed that the Cs+ and Rb+ ion exchange of KMS-1 is complete (quantitative replacement of K+ ions) and topotactic. These data also revealed that the Cs+ exchange is accompanied with a rare topotactic oxidation of Mn2+ to Mn3+ caused by atmospheric oxygen, while the Rb+ ion exchange only slightly alters the oxidation state of the layer manganese atoms. The absorption of Cs+ by KMS-1 follows the Langmuir model with a high exchange capacity of 226(4) mg/g (pH ≈ 7) and distribution coefficients as high as 2 × 104 mL/g. KMS-1 displays significant cesium uptake both under strongly acidic (pH 0.7−2.6) or basic conditions (pH 10−12). The kinetics of Cs+ capture by KMS-1 is fast (>90% removal of ∼1 ppm of Cs+ within only 5 min). KMS-1 was also found capable to efficiently absorb Cs+ from complex solutions containing various competitive cations in large excess. KMS-1 (containing Mn3+ ions) can be regenerated and reused for Cs+ exchange with an exchange capacity very similar to that of the pristine KMS-1. The results indicate that layered metal sulfides with ion-exchange properties may be considered as highly selective and cost-effective sorbents for remediation of water contaminated with the radioactive 137Cs isotope. The selectivity over other alkali ions for Cs originates not from a size effect but from the more favorable Cs···S soft Lewis acid/Lewis base interactions.
Co-reporter:In Chung ; Jung-Hwan Song ; Myung Gil Kim ; Christos D. Malliakas ; Angela L. Karst ; Arthur J. Freeman ; David P. Weliky
Journal of the American Chemical Society 2009 Volume 131(Issue 44) pp:16303-16312
Publication Date(Web):October 21, 2009
DOI:10.1021/ja907273g
We describe the inorganic polymer K4P8Te4 which is soluble, giving solutions that exhibit white emission upon 355 nm laser irradiation. An indirect band gap semiconductor (Eg ≈ 1.4 eV), K4P8Te4 crystallizes in the space group P21/m, with a = 6.946(1) Å, b = 6.555(1) Å, c = 9.955(2) Å, and β = 90.420(3)° at 173(2) K. The compound features infinite chains of [P8Te44−] with covalent P−Te bonding and exhibits reversible crystal−glass phase-change behavior. When deposited from solution, the material forms highly crystalline K4P8Te4 nanospheres. The thermal analysis, FT-IR, UV−vis diffuse reflectance, 31P magic angle spinning solid-state NMR spectroscopy, and pair distribution function (PDF) analysis for the crystal and glass forms and ab initio electronic structure calculations by the screened-exchange local density function approximation are also reported. Speciation of K4P8Te4 in solution studied with 31P solution-state NMR spectroscopy, electrospray ionization mass spectrometry, and PDF analysis indicate exfoliation of [P8Te44−] chains followed by rearrangement into molecular species.
Co-reporter:Bruce A. Cook;Matthew J. Kramer;Joel L. Harringa;Mi-Kyung Han;Duck-Young Chung
Advanced Functional Materials 2009 Volume 19( Issue 8) pp:1254-1259
Publication Date(Web):
DOI:10.1002/adfm.200801284

Abstract

Thermoelectric materials based on quaternary compounds Ag1−xPbmSbTe2+m exhibit high dimensionless figure-of-merit values, ranging from 1.5 to 1.7 at 700 K. The primary factor contributing to the high figure of merit is a low lattice thermal conductivity, achieved through nanostructuring during melt solidification. As a consequence of nucleation and growth of a second phase, coherent nanoscale inclusions form throughout the material, which are believed to result in scattering of acoustic phonons while causing only minimal scattering of charge carriers. Here, characterization of the nanosized inclusions in Ag0.53Pb18Sb1.2Te20 that shows a strong tendency for crystallographic orientation along the {001} planes, with a high degree of lattice strain at the interface, consistent with a coherent interfacial boundary is reported. The inclusions are enriched in Ag relative to the matrix, and seem to adopt a cubic, 96 atom per unit cell Ag2Te phase based on the Ti2Ni type structure. In-situ high-temperature synchrotron radiation diffraction studies indicated that the inclusions remain thermally stable to at least 800 K.

Co-reporter:Manolis J. Manos;Valeri G. Petkov
Advanced Functional Materials 2009 Volume 19( Issue 7) pp:1087-1092
Publication Date(Web):
DOI:10.1002/adfm.200801563

Abstract

The H2xMnxSn3-xS6 (x = 0.11–0.25) is a new solid acid with a layered hydrogen metal sulfide (LHMS). It derives from K2xMnxSn3–xS6 (x = 0.5–0.95) (KMS-1) upon treating it with highly acidic solutions. We demonstrate that LHMS-1 has enormous affinity for the very soft metal ions such as Hg2+ and Ag+ which occurs via a rapid ion exchange process. The tremendous affinity of LHMS-1 for Hg2+ is reflected in very high distribution coefficient KdHg values (>106 mL g−1). The large affinity and selectivity of LHMS-1 for Hg2+ persists in a very wide pH range (from less than zero to nine) and even in the presence of highly concentrated HCl and HNO3 acids. LHMS-1 is significantly more selective for Hg2+ and Ag+ than for the less soft cations Pb2+ and Cd2+. The Hg2+ ions are immobilized in octahedral sites between the sulfide layers of the materials via Hg–S bonds as suggested by pair distribution function (PDF) analysis. LHMS-1 could decrease trace concentrations of Hg2+ (e.g. <100 ppb) to well below the acceptable limits for the drinking water in less than two min. Hg-laden LHMS-1 shows a remarkable hydrothermal stability and resistance in 6 M HCl solutions. LHMS-1 could be regenerated by treating Hg-loaded samples with 12 M HCl and re-used without loss of its initial exchange capacity.

Co-reporter:Aurélie Guéguen, Pierre F. P. Poudeu, Chang-Peng Li, Steven Moses, Ctirad Uher, Jiaqing He, Vinayak Dravid, Konstantinos M. Paraskevopoulos and Mercouri G. Kanatzidis
Chemistry of Materials 2009 Volume 21(Issue 8) pp:1683
Publication Date(Web):March 24, 2009
DOI:10.1021/cm803519p
The thermoelectric properties of materials with nominal compositions NaPb18−xSnxMTe20 (M = Sb, Bi) were investigated in the temperature range 300−650 K. All the members of NaPb18−xSnxMTe20 have a cubic rock-salt (NaCl) type structure and exhibit p-type charge transport behavior between 300−650 K. The relative fraction of Sn strongly affects the physical, structural, and transport properties of the materials. Independent of the nature of the pnicogen atom (M), the electrical conductivity increases with decreasing Pb:Sn ratio, whereas the thermopower decreases. Hall effect data for selected samples, e.g., NaPb15Sn3BiTe20 and NaPb13Sn5SbTe20, show high carrier concentrations of ∼1 × 1020 cm−3 at room temperature. Comparing corresponding members from the antimony and bismuth series, we observed that the Sn-free compositions (x = 0) exhibit the highest power factors, and as a consequence, the highest ZT, with NaPb18BiTe20 reaching a ZT ≈ 1.3 at 670 K. The NaPb18−xSnxMTe20 series exhibit increasing total thermal conductivity with increasing fraction of Sn with room temperature values between 1.37 W/(m K) for x = 3 and 3.9 W/(m K) for x = 16 for NaPb18−xSnxSbTe20. The lowest lattice thermal conductivity, ∼0.4 W/(m K), was observed for the composition NaPb2Sn16BiTe20 at 650 K. High-resolution transmission electron microscopy on several members of the NaPb18−xSnxMTe20 series reveal that they are inhomogeneous on the nanoscale with widely dispersed nanocrystals embedded in a Pb1−ySnyTe matrix. Also observed are lamellar features in these materials associated with compositional fluctuations and significant strain at the nanocrystal/matrix interface.
Co-reporter:Kyunghan Ahn, Changpeng Li, Ctirad Uher and Mercouri G. Kanatzidis
Chemistry of Materials 2009 Volume 21(Issue 7) pp:1361
Publication Date(Web):March 19, 2009
DOI:10.1021/cm803437x
The thermoelectric properties of La-doped and Ag/La codoped PbTe were investigated in the temperature range of 300 to ∼720 K. All samples crystallize in the NaCl-type structure without noticeable secondary phase and exhibit narrow bandgaps of 0.26−0.30 eV, typical of PbTe. La doping (≤5 at %) in PbTe significantly enhances the room temperature electrical conductivity to >5000 S/cm, indicating that La is an efficient electron donor. Hall coefficient data confirm the significant increase in electron carrier concentration from ∼2 × 1018 cm−3 at 300 K for PbTe to ∼5.3 × 1019 cm−3 for Pb0.99La0.01Te, and ∼1.7 × 1020 cm−3 for Pb0.95La0.05Te. Ag doping in Pb0.99La0.01Te has an opposite effect on the electron carrier concentration (∼2.0 × 1019 cm−3 at 300 K for Ag0.05Pb0.99La0.01Te and ∼1.5 × 1019 cm−3 for Ag0.1Pb0.99La0.01Te), consistent with the role of Ag as electron acceptor. The temperature dependence of mobility is discussed in detail using the physics of electron scattering and possible scattering mechanisms. For Ag0.05Pb0.99La0.01Te, a high power factor of ∼22 μW/(cm K2) at ∼720 K was achieved with the optimal total thermal conductivity of ∼ 1.3 W/(m K) at ∼720 K, giving a maximum figure of merit ZT ≈ 1.2 at ∼720 K.
Co-reporter:Qichun Zhang, In Chung, Joon I. Jang, John B. Ketterson and Mercouri G. Kanatzidis
Chemistry of Materials 2009 Volume 21(Issue 1) pp:12
Publication Date(Web):December 11, 2008
DOI:10.1021/cm8027516
Co-reporter:Susan E. Latturner ; Daniel Bilc ; S. D. Mahanti
Inorganic Chemistry 2009 Volume 48(Issue 4) pp:1346-1355
Publication Date(Web):January 15, 2009
DOI:10.1021/ic801095v
A collection of new quaternary intermetallic compounds with a cubic, stuffed BaHg11 structure type has been synthesized by the combination of a divalent rare earth or alkaline earth metal R, an early transition metal T, and gold in an excess of molten aluminum. Structural characterization of these R3Au6+xAl26T compounds by powder and single crystal X-ray diffraction indicates that the unit cell varies with the radii of the early transition metal T and the rare earth/alkaline earth R as expected. The element T (where T = group 4, 5, 6, and 7 element) appears to be responsible for the stabilization of up to 43 different members of the R3Au6+xAl26T family of compounds. Varying amounts of disorder and trends in partial occupancies of the Au stuffed site—the site that is vacant in the parent compound BaHg11—are also indicated by the diffraction studies of this family of compounds. Magnetic susceptibility data reveals that the transition metal atoms in these materials do not possess local magnetic moments. For the magnetic rare earth containing materials, the europium compounds undergo a ferromagnetic transition at 10 K, and the ytterbium analogues show mixed valent behavior. Band structure calculations also support a mixed valent state for Yb in these compounds.
Co-reporter:Qichun Zhang, Gerasimos Armatas and Mercouri G. Kanatzidis
Inorganic Chemistry 2009 Volume 48(Issue 18) pp:8665-8667
Publication Date(Web):August 17, 2009
DOI:10.1021/ic901282g
The solvothermal reaction among tellurium, manganese, and the Zintl compound K4Ge9 has led to the formation of a polymeric mixed-valent complex {[Mn(en)3]2(Ge5Te10)}n (1; en = ethylenediamine). The most interesting structural feature of this material is the presence of three different oxidation states of germanium centers and the formation of Ge−Ge bonds in the infinite polymeric chains 1/∞{[Ge5Te10]4−}. X-ray photoelectron spectroscopy characterization confirms the different oxidation states of germanium.
Co-reporter:Alexander Rothenberger, Collin Morris, Hsien-Hau Wang, Duck Young Chung and Mercouri G. Kanatzidis
Inorganic Chemistry 2009 Volume 48(Issue 18) pp:9036-9040
Publication Date(Web):August 26, 2009
DOI:10.1021/ic901283k
The synthesis and structures of the three new compounds, KPbPS1.84Se2.16 (1), RbPbPS1.56Se2.43 (2), and CsPbPS3.46Se0.54 (3), are reported. The solid state structures of 1−3 consist of two-dimensional layers of [PbP(S/Se)4] separated by alkali metal ions. The structure of 1 was solved in the orthorhombic space group Pna21. Compounds 2 and 3 possess the CsSmGeS4 structure type, crystallizing in the orthorhombic space group P212121. All compounds were refined as racemic twins. All chalcogen sites around the tetrahedrally coordinated P atoms show mixed S/Se occupancy; however, there is a preference for Se binding to Pb ions and S binding to alkali ions. A 31P magic angle spinning NMR study on 1 suggests that, in mixed seleno-/thiophosphates, all of the anions [PSxSe4−x]3− (x = 0, 1, 2, 3, 4) are present. The different amount of sulfur and selenium present in KPbPS1.84Se2.16 (1), RbPbPS1.56Se2.43 (2), and CsPbPS3.46Se0.54 (3) is reflected in the solid state absorption spectra from which bandgaps of 2.2 eV were determined for 1 and 2, and a blue-shift to 2.5 eV was observed because of the higher sulfur-content in 3. Thermogravimetric analysis experiments indicated that, upon heating, compound 1 decomposes forming PbSe and sulfur together with other unidentified products. A Raman spectrum of compound 1 showed more bands than are usually observed in seleno- or thiophosphate salts and is another indicator of the mixed seleno-/thiophosphate anions found in 1.
Co-reporter:Manolis J. Manos and Mercouri G. Kanatzidis
Inorganic Chemistry 2009 Volume 48(Issue 11) pp:4658-4660
Publication Date(Web):April 23, 2009
DOI:10.1021/ic900517u
The reaction system Mn/Sn/S/hydrazine/water at ∼150 °C afforded [Mn2SnS4(N2H4)2] (1). The compound has a unique neutral three-dimensional framework with bridging hydrazine ligands and a variety of interconnectivity modes between MnL6 (L = N, S) octahedra. The complex structure of 1 leads to strong antiferromagnetic interactions between the Mn2+ centers and ordering at ∼41 K. The stabilization of 1 underscores the high potential of hydrazine to promote the formation of novel chalcogenide materials under solvothermal conditions.
Co-reporter:Iliya Todorov, Duck Young Chung, Linhui Ye, Arthur J. Freeman and Mercouri G. Kanatzidis
Inorganic Chemistry 2009 Volume 48(Issue 11) pp:4768-4776
Publication Date(Web):April 17, 2009
DOI:10.1021/ic900035a
We report the synthesis, structure, spectroscopic properties, charge and thermal transport, and electronic structure of a new member of the Zintl family, Yb5Al2Sb6. The compound crystallizes in the Ba5Al2Bi6 structure type and requires the addition of Ge or Si in the synthesis, which appears to act as a catalyst. Yb5Al2Sb6 has an anisotropic structure with infinite anionic double chains cross-linked by Yb2+ ions. Polycrystalline ingots of Yb5Al2Sb6 prepared in the presence of 0.5 mol equiv of Ge showed room-temperature conductivity, thermopower, and thermal conductivity of ∼1100 S/cm, ∼20 μV/K, and ∼3.8 W/m·K, respectively. Investigations of other solid solutions of Yb5Al2Sb6, doping effects, and chemical modifications are discussed. Sr only partially replaces Yb in the structure leading to Sr0.85Yb4.15Al2Sb6. Electronic structure calculations performed using a highly precise full-potential linearized augmented plane wave method within the density functional theory scheme show the presence of a negative band gap and suggest incomplete electron transfer and a metallic character to the compound.
Co-reporter:Joshua L. Mertz ; Nan Ding
Inorganic Chemistry 2009 Volume 48(Issue 23) pp:10898-10900
Publication Date(Web):November 11, 2009
DOI:10.1021/ic901927r
Three new isostructural open-framework sulfides, (NH4)5Ga4SbS10 (1), (NH4)4Ga4SbS9(OH)·H2O (2a), and (NH4)3Ga4SbS9(H2O)·2H2O (2b), were synthesized under basic hydrothermal conditions using ammonium hydroxide as the structure-directing agent. The structures feature a three-dimensional open framework comprised of adamantane [Ga4Q10]8− clusters linked with Sb3+ centers. The compounds are wide gap semiconductors, crystallize in the chiral space group P213, and represent a new structure type. They exhibit nonlinear optical properties.
Co-reporter:Qichun Zhang ; Christos D. Malliakas
Inorganic Chemistry 2009 Volume 48(Issue 23) pp:10910-10912
Publication Date(Web):November 11, 2009
DOI:10.1021/ic9019074
The reaction of the Zintl compound K4Ge9 with Te and Ga2Te3 in ethylenediamine (en) at 190 °C gave the germanium polytelluride {[Ga(en)3]2[(GeTe)2(Te5)6−(Te8)4−]}n (1). The single-crystal structure analysis revealed that 1 has two different polytelluride fragments: cross-shaped 36-e− TeTe46− anions and boat-shaped 52-e− Te84− rings. The new material is a p-type semiconductor at room temperature and switches to n-type at 380 K.
Co-reporter:ManolisJ. Manos Dr. ;MercouriG. Kanatzidis
Chemistry - A European Journal 2009 Volume 15( Issue 19) pp:4779-4784
Publication Date(Web):
DOI:10.1002/chem.200900353
Co-reporter:JosephR. Sootsman;DuckYoung Chung Dr.;MercouriG. Kanatzidis
Angewandte Chemie International Edition 2009 Volume 48( Issue 46) pp:8616-8639
Publication Date(Web):
DOI:10.1002/anie.200900598

Abstract

Herein we cover the key concepts in the field of thermoelectric materials research, present the current understanding, and show the latest developments. Current research is aimed at increasing the thermoelectric figure of merit (ZT) by maximizing the power factor and/or minimizing the thermal conductivity. Attempts at maximizing the power factor include the development of new materials, optimization of existing materials by doping, and the exploration of nanoscale materials. The minimization of the thermal conductivity can come through solid-solution alloying, use of materials with intrinsically low thermal conductivity, and nanostructuring. Herein we describe the most promising bulk materials with emphasis on results from the last decade. Single-phase bulk materials are discussed in terms of chemistry, crystal structure, physical properties, and optimization of thermoelectric performance. The new opportunities for enhanced performance bulk nanostructured composite materials are examined and a look into the not so distant future is attempted.

Co-reporter:JosephR. Sootsman;DuckYoung Chung Dr.;MercouriG. Kanatzidis
Angewandte Chemie 2009 Volume 121( Issue 46) pp:8768-8792
Publication Date(Web):
DOI:10.1002/ange.200900598

Abstract

Grundkonzepte für die Erforschung thermoelektrischer Materialien, der gegenwärtige Kenntnisstand und neueste Entwicklungen auf dem Gebiet sind die Themen dieses Aufsatzes. In aktuellen Forschungsarbeiten werden der Leistungsfaktor maximiert und/oder die Wärmeleitfähigkeit minimiert, um höhere ZT–Werte zu erzielen. Ansätze zur Maximierung des Leistungsfaktors sind die Entwicklung neuer oder das Optimieren existierender Materialien durch Dotieren sowie die Erforschung nanoskaliger Materialien. Die Wärmeleitfähigkeit kann minimiert werden durch das Herstellen fester Lösungen, die Verwendung von Materialien mit niedriger intrinsischer Wärmeleitfähigkeit und durch Nanostrukturierung. Dieser Aufsatz beschreibt die aussichtsreichsten thermoelektrischen Bulkmaterialien unter Berücksichtigung der während des letzten Jahrzehnts gewonnenen Erkenntnisse. Zu Beginn werden die Kristallstruktur und die chemischen und physikalischen Eigenschaften einphasiger Bulkmaterialien sowie die Optimierung ihrer thermoelektrischen Leistung diskutiert. Anschließend wird untersucht, welche neuen Möglichkeiten sich durch den Einsatz nanostrukturierter Kompositmaterialien ergeben. Den Abschluss bildet ein Ausblick in die fernere Zukunft.

Co-reporter:G. S. Armatas;M. G. Kanatzidis
Advanced Materials 2008 Volume 20( Issue 3) pp:
Publication Date(Web):
DOI:10.1002/adma.200890005
Co-reporter:G. S. Armatas;M. G. Kanatzidis
Advanced Materials 2008 Volume 20( Issue 3) pp:546-550
Publication Date(Web):
DOI:10.1002/adma.200701751
Co-reporter:Indika U. Arachchige;Jinsong Wu;Vinayak P. Dravid
Advanced Materials 2008 Volume 20( Issue 19) pp:3638-3642
Publication Date(Web):
DOI:10.1002/adma.200801116
Co-reporter:Bradley Sieve, Danielle L. Gray, Robert Henning, Thomas Bakas, Arthur J. Schultz and Mercouri G. Kanatzidis
Chemistry of Materials 2008 Volume 20(Issue 19) pp:6107
Publication Date(Web):September 10, 2008
DOI:10.1021/cm801554d
Two rare earth iron aluminum silicides, REFe4Al9Si6 (RE = Tb, Er), were synthesized in liquid Al at temperatures below 850 °C. They crystallize in the tetragonal space group P42/nmc (no. 137) with cell dimensions of a = 8.718(1) Å and c = 15.171(3) Å for the Tb analogue. The structure, which is highly intricate and represents a rare structural arrangement, is based on that of NdRh4Al15.4. It can be understood in terms of highly corrugated layers of merged Al6 rings stacking to form a three-dimensional framework. The Fe and Si atoms are situated in various sites in the framework. The RE atoms have a very high coordination number (20) and sit in remaining pockets formed by the bonding arrangements in the structure. Magnetic measurements show that the rare earth ions are in a 3+ state, whereas Mössbauer measurements show that the Fe atoms do not exhibit a magnetic moment and are more reduced than in elemental Fe. The possible insights gained from these results into the metallurgical processing of advanced aluminum matrix alloys are discussed. Thermal gravimetric analysis experiments in air show that REFe4Al9Si6 is resistant to oxidation up to 900 °C, which is attributable to an alumina/silica surface scale.
Co-reporter:Mi-Kyung Han, Khang Hoang, Huijun Kong, Robert Pcionek, Ctirad Uher, Konstantinos M. Paraskevopoulos, S. D. Mahanti and Mercouri G. Kanatzidis
Chemistry of Materials 2008 Volume 20(Issue 10) pp:3512
Publication Date(Web):April 25, 2008
DOI:10.1021/cm703661g
We have performed a comparative investigation of the Ag1−xPb18MTe20 (M = Bi, Sb) (x = 0, 0.14, 0.3) system to assess the roles of Sb and Bi on the thermoelectric properties. Detailed charge transport data including electrical conductivity, the Seebeck coefficient, the Hall coefficient, and thermal conductivity are presented. Optical reflectivity data support the conclusions of the transport studies. For comparable nominal compositions, the carrier concentrations are lower in the Sb analogs and the mobilities are higher. The Seebeck coefficient decreases dramatically in going from Sb to Bi. High resolution transmission electron microscopy (TEM) images of both samples reveal that all systems contain compositional fluctuations at the nanoscopic level and are nanostructured. Compared to PbTe, the lattice thermal conductivity of AgPb18BiTe20 is substantially reduced. The lattice thermal conductivity of the Bi analog is, however, higher than the Sb analog, and this correlates with the decrease in the degree of mass fluctuation between the nanostructures and the matrix (for the Bi analog). As a result the dimensionless figure of merit ZT of Ag1−xPb18BiTe20 is found to be substantially smaller than that of Ag1−xPb18SbTe20. Electronic structure calculations performed within the density functional theory and generalized gradient approximation show marked differences in the band structure near the Fermi level between the two analogs providing useful insights on the carrier transport in these systems.
Co-reporter:Santanu Bag, Indika U. Arachchige and Mercouri G. Kanatzidis  
Journal of Materials Chemistry A 2008 vol. 18(Issue 31) pp:3628-3632
Publication Date(Web):17 Jun 2008
DOI:10.1039/B804011G
Metal-oxide and carbon gels and aerogels have been known for a long time. These aerogels have always been of strong interest because of their intriguing properties and potential diverse technological impact. Thanks to new sol–gel chemistry, chalcogenide nanoparticle and cluster-based aerogels (chalcogels) are the latest aerogels to come to the field and are now gaining notoriety because of properties not available in conventional aerogels. In this article, we highlight the recent synthetic advances in chalcogenide aerogels and their emerging unique properties and discuss some potential applications.
Co-reporter:Manolis J. Manos, Joon I. Jang, John B. Ketterson and Mercouri G. Kanatzidis  
Chemical Communications 2008 (Issue 8) pp:972-974
Publication Date(Web):18 Dec 2007
DOI:10.1039/B712732D
[Zn(H2O)4][Zn2Sn3Se9(MeNH2)] has an open polar framework based on supertetrahedral clusters with a unique double connectivity mode and exhibits a strong second harmonic generation response, excellent acid stability and proton exchange capacity.
Co-reporter:Konstantina Tsamourtzi, Jung-Hwan Song, Thomas Bakas, Arthur J. Freeman, Pantelis N. Trikalitis and Mercouri G. Kanatzidis
Inorganic Chemistry 2008 Volume 47(Issue 24) pp:11920-11929
Publication Date(Web):November 11, 2008
DOI:10.1021/ic801762h
The reaction of K2Sn2Q5 (Q = S, Se, Te) with stoichiometric amounts of alkyl-ammonium bromides R4NBr (R = methyl or ethyl) in ethylenediamine (en) afforded the corresponding salts (R4N)4[Sn4Q10] (Q = S, Se, Te) in high yield. Although the compound K2Sn2Te5 is not known, this reaction is also applicable to solids with a nominal composition “K2Sn2Te5” which in the presence of R4NBr in en are quantitatively converted to the salts (R4N)4[Sn4Te10] on a multigram scale. These salts contain the molecular adamantane clusters [Sn4Q10]4− and can serve as soluble precursors in simple metathesis reactions with transition metal salts to synthesize the large family of open-framework compounds (Me4N)2M[Sn4Se10] (M = Mn2+, Fe2+, Co2+, Zn2+). Full structural characterization of these materials as well as their magnetic and optical properties is reported. Depending on the transition metal in (Me4N)2M[Sn4Se10], the energy band gaps of these compounds lie in the range of 1.27−2.23 eV. (Me4N)2Mn[Ge4Te10] is the first telluride analogue to be reported in this family. This material is a narrow band gap semiconductor with an optical absorption energy of 0.69 eV. Ab initio electronic band structure calculations validate the semiconductor nature of these chalcogenides and indicate a nearly direct band gap.
Co-reporter:Marina A. Zhuravleva
Inorganic Chemistry 2008 Volume 47(Issue 20) pp:9471-9477
Publication Date(Web):September 24, 2008
DOI:10.1021/ic801067g
The quaternary intermetallics Ce2CoGa9Ge2, Ce2NiGa9Ge2, and Sm2NiGa9Ge2 were prepared by reacting elemental metals in excess of gallium at 850 °C. The title compounds crystallize in the tetragonal space group P4/nmm in the Sm2Ni(Si1-xNix)Al4Si6 structure type with cell parameters a = 5.9582(5) Å, c = 15.0137(18) Å, and a = 5.9082(17) Å, c = 14.919(6) Å, Z = 2, for Ce2CoGa9Ge2 and Sm2NiGa9Ge2, respectively. The structures are composed of covalently bonded three-dimensional networks of [CoGa9Ge2] in which the rare-earth metals fill the voids forming a 2D square net. The structures of RE2MGa9Ge2 are Ga-rich and possess extensive Ga−Ga bonding even though the Ga atoms do not form a network on their own. Magnetic susceptibility measurements for Ce2CoGa9Ge2 and Ce2NiGa9Ge2 show Curie−Weiss paramagnetism, consistent with presence of Ce3+ ions. Magnetocrystalline anisotropy was observed for Ce2NiGa9Ge2, with the magnetically easy axis lying along the [001] crystallographic direction. A transition to an antiferromagnetic state was observed below 4 K in the easy direction of magnetization. In the magnetically hard direction of the basal plane, paramagnetic behavior was observed down to 1.8 K.
Co-reporter:Tarun K. Bera and Mercouri G. Kanatzidis
Inorganic Chemistry 2008 Volume 47(Issue 16) pp:7068-7070
Publication Date(Web):July 25, 2008
DOI:10.1021/ic801017h
Four europium compounds, LiEuAsS3 (I), KEuAsS3 (IIa), RbEuAsS3 (IIb), and CsEuAsS3 (IIc), containing As3+ were synthesized in molten alkali-metal polysulfide salts. An As-rich flux was found to be necessary to stabilize the pyramidal building unit [AsS3]3−. All crystallize in the monoclinic space group P21/c with two new structure types. Compound I features a new coordination mode for the [AsS3]3− unit and three-dimensional [Eu(AsS3)]− framework. Compounds IIa−c are isostructural and feature a layer of [Eu(AsS3)]− with an unusual μ5-sulfide anion in a umbrella-like geometry. The compounds are paramagnetic semiconductors with an energy gap of ∼2.0 eV.
Co-reporter:Danielle L. Gray, Melanie C. Francisco and Mercouri G. Kanatzidis
Inorganic Chemistry 2008 Volume 47(Issue 16) pp:7243-7248
Publication Date(Web):July 25, 2008
DOI:10.1021/ic801080f
YCo0.88Ga3Ge has an incommensurately modulated structure that was solved with (3 + 1)D superspace techniques. YCo0.88Ga3Ge crystallizes in the orthorhombic superspace group Immm(α00)00s with unit cell constants of a = 4.1639(4), b = 4.1639(4), c = 23.541(2) Å and a modulation vector of q = 0.3200(4)a* at 293 K. The incommensurate modulation, which creates a very large supercell (∼25 fold), arises from a charge density wave (CDW) in the square net of Ga atoms that is coupled with a site occupancy wave (SOW) of Co atoms. The distorted Ga net features polygallide ribbons, chains, as well as single atoms. Temperature dependent crystallographic studies of the structure from 100−500 K indicate that the CDW is “locked in”. Electrical conductivity and thermopower measurements in the temperature range of 300−500 K show that YCo0.88Ga3Ge is a poor metal.
Co-reporter:Susan E. Latturner
Inorganic Chemistry 2008 Volume 47(Issue 6) pp:2089-2097
Publication Date(Web):January 17, 2008
DOI:10.1021/ic701799z
The combination of early rare earth metals (La– to Gd and Yb), gold, and silicon in molten aluminum results in the formation of intermetallic compounds with four related structures, forming a new homologous series: RE[AuAl2]nAl2(AuxSi1−x)2, with x ≈ 0.5 for most of the compound and n = 0, 1, 2, and 3. Because of the highly reducing nature of the Al flux, rare earth oxides instead of metals can also be used in these reactions. These compounds grow as large plate-like crystals and have tetragonal structure types that can be viewed as intergrowths of the BaAl4 structure and antifluorite-type AuAl2 layers. REAuAl2Si materials form with the BaAl4 structure type in space group I4/mmm (cell parameters for the La analogue are a = 4.322(2) Å, c = 10.750(4) Å, and Z = 2). REAu2Al4Si forms in a new ordered superstructure of the KCu4S3 structure type, with space group P4/nmm and cell parameters of the La analogue of a = 6.0973(6) Å, c = 8.206(1) Å, and Z = 2. REAu3Al6Si forms in a new I4/mmm symmetry structure type with cell parameters of a = 4.2733(7) Å, c = 22.582(5) Å, and Z = 2 for RE = Eu. The end member of the series, REAu4Al8Si, forms in space group P4/mmm with cell parameters for the Yb analogue of a = 4.2294(4) Å, c = 14.422(2) Å, and Z = 1. New intergrowth structures containing two different kinds of AuAl2 layers were also observed. The magnetic behavior of all these compounds is derived from the RE ions. Comparison of the susceptibility data for the europium compounds indicates a switch from 3-D magnetic interactions to 2-D interactions as the size of the AuAl2 layer increases. The Yb ions in YbAu2.91Al6Si1.09 and YbAu3.86Al8Si1.14 are divalent at high temperatures.
Co-reporter:A. Kaidatzis, J.B. Wachter, K. Chrissafis, K.M. Paraskevopoulos, M.G. Kanatzidis
Journal of Non-Crystalline Solids 2008 Volume 354(Issue 30) pp:3643-3648
Publication Date(Web):15 July 2008
DOI:10.1016/j.jnoncrysol.2008.03.020
K1−xRbxSb5S8 (x = 0.25, 0.5, 0.75) is a well-defined single-phase system that undergoes a reversible phase-change. We determined the activation energy of glass transition and crystallization, respectively, for the three compositions using the Kissinger and Ozawa–Flynn–Wall equations. The results have shown that for K0.25Rb0.75Sb5S8 the crystallization mechanism could be interpreted in terms of a single-step reaction. For the other two compositions the glass-to-crystal transformation is a process of increasing mechanistic complexity with time and it involves simultaneously several different nucleation and growth events. The slope of the lines in the Avrami plots was observed to be independent of heating rate for K0.25Rb0.75Sb5S8 and the mean value of the activation energy was found to be 262 ± 6 kJ/mol. For the other two compositions, the slope varies with the heating rate. In the K0.25Rb0.75Sb5S8 glasses, bulk nucleation with three-dimensional crystal growth appears to dominate the phase-change process.
Co-reporter:Xiuni Wu, Melanie Francisco, Zsolt Rak, T. Bakas, S.D. Mahanti, Mercouri G. Kanatzidis
Journal of Solid State Chemistry 2008 Volume 181(Issue 12) pp:3269-3277
Publication Date(Web):December 2008
DOI:10.1016/j.jssc.2008.08.029
The combination of ytterbium, nickel, iron in liquid aluminum resulted in the formation of the new intermetallic compound YbNi2−xFexAl8 (x=0.91) which adopts the CaCo2Al8 structure type with a=14.458(3) Å, b=12.455(3) Å, c=3.9818(8) Å and space group Pbam. Its resistivity drops with decreasing temperature, saturating to a constant value at lower temperatures. Above 50 K, the inverse magnetic susceptibility data follows Curie–Weiss Law, with a calculated μeff=2.19 μB. Although the observed reduced moment in magnetic susceptibility measurement suggests that the Yb ions in this compound are of mixed-valent nature, ab initio electronic structure calculations within density functional theory using LDA+U approximation give an f13 configuration in the ground state.The reaction of ytterbium, nickel, iron in aluminum flux gives crystals of the intermetallic compound YbNi2−xFexAl8 (x=0.96) which adopts the CaCo2Al8 structure, ab initio electronic structure calculations within density functional theory using LDA+U approximation suggest an f13 configuration in the ground state.
Co-reporter:Nan Ding;Manolis J. Manos
PNAS 2008 Volume 105 (Issue 10 ) pp:3696-3699
Publication Date(Web):2008-03-11
DOI:10.1073/pnas.0711528105
In this article, we report the family of robust layered sulfides K2xMnxSn3-xS6 (x = 0.5–0.95) (KMS-1). These materials feature hexagonal [MnxSn3-xS6]2x− slabs of the CdI2 type and contain highly mobile K+ ions in their interlayer space that are easily exchangeable with other cations and particularly strontium. KMS-1 display outstanding preference for strontium ions in highly alkaline solutions containing extremely large excess of sodium cations as well as in acidic environment where most alternative adsorbents with oxygen ligands are nearly inactive. The implication of these results is that simple layered sulfides should be considered for the efficient remediation of certain nuclear wastes.
Co-reporter:TarunK. Bera;Jung-Hwan Song Dr.;ArthurJ. Freeman ;JoonI. Jang Dr.;JohnB. Ketterson ;MercouriG. Kanatzidis Dr.
Angewandte Chemie 2008 Volume 120( Issue 41) pp:7946-7950
Publication Date(Web):
DOI:10.1002/ange.200801392
Co-reporter:JosephR. Sootsman;Huijun Kong;Ctirad Uher ;JonathanJames D'Angelo;Chun-I Wu Dr.;TimothyP. Hogan ;Thierry Caillat Dr.;MercouriG. Kanatzidis
Angewandte Chemie International Edition 2008 Volume 47( Issue 45) pp:8618-8622
Publication Date(Web):
DOI:10.1002/anie.200803934
Co-reporter:TarunK. Bera;Jung-Hwan Song Dr.;ArthurJ. Freeman ;JoonI. Jang Dr.;JohnB. Ketterson ;MercouriG. Kanatzidis Dr.
Angewandte Chemie International Edition 2008 Volume 47( Issue 41) pp:7828-7832
Publication Date(Web):
DOI:10.1002/anie.200801392
Co-reporter:JosephR. Sootsman;Huijun Kong;Ctirad Uher ;JonathanJames D'Angelo;Chun-I Wu Dr.;TimothyP. Hogan ;Thierry Caillat Dr.;MercouriG. Kanatzidis
Angewandte Chemie 2008 Volume 120( Issue 45) pp:8746-8750
Publication Date(Web):
DOI:10.1002/ange.200803934
Co-reporter:M. G. Kanatzidis
Advanced Materials 2007 Volume 19(Issue 9) pp:
Publication Date(Web):13 APR 2007
DOI:10.1002/adma.200601763

Recent advances in the design and synthesis of mesostructured and mesoporous materials with nonoxide frameworks are reviewed. Chalcogenides comprise the most important class, and all possible pore arrangements known for silica can be achieved in these materials. The special molecular chemistry that leads to organized nonoxidic mesostructures that have a variety of compositions, pore sizes, and semiconductor bandgaps is presented. Also reviewed are recent developments in mesoporous elements, such as metals and germanium. The goal in research on mesoporous semiconductors is to create materials scaffolds with new physical phenomena that derive from the combined characteristics of long-range porosity and electronic and optical properties.

Co-reporter:In Chung, Joon I. Jang, Matthew A. Gave, David P. Weliky and Mercouri G. Kanatzidis  
Chemical Communications 2007 (Issue 47) pp:4998-5000
Publication Date(Web):12 Nov 2007
DOI:10.1039/B714301J
The caesium salts of the novel molecular anions [P5Se12]5− and [P6Se12]4− are phase change materials and exhibit near infrared, non-linear optical second harmonic generation; [P5Se12]5− is a coordination complex with an octahedral P3+ center chelated by two [P2Se6]4− ligands whereas [P6Se12]4− features a [P2]4+ dimer chelated by two [P2Se6]4− ligands.
Co-reporter:Mercouri G. Kanatzidis
Journal of Solid State Chemistry 2007 Volume 180(Issue 1) pp:1
Publication Date(Web):January 2007
DOI:10.1016/j.jssc.2006.11.021
Co-reporter:Matthew A. Gave, Christian G. Canlas, In Chung, Ratnasabapathy G. Iyer, Mercouri G. Kanatzidis, David P. Weliky
Journal of Solid State Chemistry 2007 Volume 180(Issue 10) pp:2877-2884
Publication Date(Web):October 2007
DOI:10.1016/j.jssc.2007.08.002
The new compound Cs4P2Se10 was serendipitously produced in high purity during a high-temperature synthesis done in a nuclear magnetic resonance (NMR) spectrometer. 31P magic angle spinning (MAS) NMR of the products of the synthesis revealed that the dominant phosphorus-containing product had a chemical shift of −52.8 ppm that could not be assigned to any known compound. Deep reddish brown well-formed plate-like crystals were isolated from the NMR reaction ampoule and the structure was solved with X-ray diffraction. Cs4P2Se10 has the triclinic space group P-1 with a=7.3587(11) Å, b=7.4546(11) Å, c=10.1420(15) Å, α=85.938(2)°, β=88.055(2)°, and γ=85.609(2)° and contains the [P2Se10]4− anion. To our knowledge, this is the first compound containing this anion that is composed of two tetrahedral (PSe4) units connected by a diselenide linkage. It was also possible to form a glass by quenching the melt in ice water, and Cs4P2Se10 was recovered upon annealing. The static 31P NMR spectrum at 350 °C contained a single peak with a −35 ppm chemical shift and a ∼7 ppm peak width. This study highlights the potential of solid-state and high-temperature NMR for aiding discovery of new compounds and for probing the species that exist at high temperature.The new compound Cs4P2Se10 was discovered following a high-temperature in situ synthesis in the NMR spectrometer and the structure was determined by single-crystal X-ray diffraction. It contains the new [P2Se10]4− anion.
Co-reporter:Santanu Bag;Pantelis N. Trikalitis;Peter J. Chupas;Gerasimos S. Armatas
Science 2007 Volume 317(Issue 5837) pp:490-493
Publication Date(Web):27 Jul 2007
DOI:10.1126/science.1142535

Abstract

Inorganic porous materials are being developed for use as molecular sieves, ion exchangers, and catalysts, but most are oxides. We show that various sulfide and selenide clusters, when bound to metal ions, yield gels having porous frameworks. These gels are transformed to aerogels after supercritical drying with carbon dioxide. The aerogels have high internal surface area (up to 327 square meters per gram) and broad pore size distribution, depending on the precursors used. The pores of these sulfide and selenide materials preferentially absorb heavy metals. These materials have narrow energy gaps (between 0.2 and 2.0 electron volts) and low densities, and they may be useful in optoelectronics, as photocatalysts, or in the removal of heavy metals from water.

Co-reporter:Manolis J. Manos Dr.;Christos D. Malliakas
Chemistry - A European Journal 2007 Volume 13(Issue 1) pp:
Publication Date(Web):22 NOV 2006
DOI:10.1002/chem.200600892

The hydrothermal synthesis of the purely inorganic open-framework indium selenide (NH4)4In12Se20 (1) is reported. Compound 1 exhibits a unique three-dimensional open-framework structure. The framework of 1 shows an unusual, for a chalcogenide compound, rigidity arising from the unprecedented connection mode of its building blocks. Compound 1 possesses ion exchange capacity for Cs+, Rb+, NH4+, but it has selectivity against Na+ and Li+. It also showed exceptional stability in relatively concentrated hydrochloric acid. Ion exchange of 1 with hydrochloric water solutions can produce its solid acid analogue H2(NH4)2In12Se20. The maximum cation-exchange capacity of 1 was found equal to two equivalents per mol, which is consistent with an exchange mechanism taking place in the 1D-channels formed by the largest cavities. In addition, 1 can do ion-exchange with heavy-metal ions like Hg2+, Pb2+, and Ag+. The capacity of 1 to clean water solutions from heavy-metal ions was preliminarily investigated and found very high. Specifically, 1 can remove 99.9 % of Hg2+, 99.8 % of Ag+, and 94.9 % of Pb2+ from aqueous solutions of each of these ions. Using different synthetic conditions, we isolated compound (NH4)2In12Se19 (2), which also has as good an acid stability as 1, but no ion-exchange properties. Overall, this work provides new hydrothermal synthetic approaches for isolation of all-inorganic open-framework chalcogenides.

Co-reporter:Manolis J. Manos Dr.;Christos D. Malliakas
Chemistry - A European Journal 2007 Volume 13(Issue 1) pp:
Publication Date(Web):11 DEC 2006
DOI:10.1002/chem.200790001
Purely inorganic open-framework compounds (NH4)4In12Se20 (1) and (NH4)2In12Se19 (2) have been synthesized and their ion-exchange properties are reported by M. Kanatzidis et al. in their Full Paper on page 51ff. The chalcogenide framework has innate reactivity towards soft heavy-metal ions (Hg2+, Pb2+, Ag+) and its pores are well suited for their capture. The authors show that 1 can effectively and selectively remove such metal ions from water.
Co-reporter:Santanu Bag
Journal of the American Chemical Society () pp:
Publication Date(Web):October 6, 2010
DOI:10.1021/ja1059284
We report the synthesis of metal−chalcogenide gels and aerogels from anionic chalcogenide clusters and linking metal ions. Metal ions such as Sb3+ and Sn2+, respectively chelated with tartrate and acetate ligands, react in solution with the chalcogenide clusters to form extended polymeric networks that exhibit gelation phenomena. Chalcogenide cluster anions with different charge densities, such as [Sn2S6]4− and [SnS4]4−, were employed. In situ rheological measurements during gelation showed that a higher charge density on the chalcogenide cluster favors formation of a rigid gel network. Aerogels obtained from the gels after supercritical drying have BET surface areas from 114 to 368 m2/g. Electron microscopy images coupled with nitrogen adsorption measurements showed the pores are micro (below 2 nm), meso (2−50 nm), and macro (above 50 nm) regions. These chalcogels possess band gaps in the range of 1.00−2.00 eV and selectively adsorb polarizable gases. A 2-fold increase in selectivity toward CO2/C2H6 over H2 was observed for the Pt/Sb/Ge4Se10-containing aerogel compared to aerogel containing Pt2Ge4S10. The experimental results suggest that high selectivity in gas adsorption is achievable with high-surface-area chalcogenide materials containing heavy polarizable elements.
Co-reporter:Pei-Yang Gu, Ning Wang, Chengyuan Wang, Yecheng Zhou, Guankui Long, Miaomiao Tian, Wangqiao Chen, Xiao Wei Sun, Mercouri G. Kanatzidis and Qichun Zhang
Journal of Materials Chemistry A 2017 - vol. 5(Issue 16) pp:NaN7344-7344
Publication Date(Web):2017/03/25
DOI:10.1039/C7TA01764B
Compared to the traditional-architecture perovskite photovoltaic solar cells (n-i-p type), which use metal oxide as electron transport layers (ETLs) and organic semiconducting materials as hole transport layers, the fabrication of metal-oxide-free, solution-processed inverted perovskite solar cells (PSCs) is more desired because of low-temperatures and all-solution-based applications in future commercial PSC modules. In a typical configuration of inverted PSCs, the widely used ETL compound is the fullerene-based phenyl-C61-butyric acid methyl ester (PCBM), which currently is the best organic ETL material. The cost of this compound is very high, and the morphology and electrical properties are very sensitive to experimental conditions. We here propose a new organic ETL material for the replacement of PCBM in inverted PSCs. We demonstrate metal-oxide-free solution-processed inverted PSCs using the n-type sulfur-containing azaacene 10,14-bis(5-(2-ethylhexyl)thiophen-2-yl)-dipyrido[3,2-a:2′,3′-c][1,2,5]thiadiazolo[3,4-i]phenazine (TDTP) as the ETL with a power conversion efficiency of ∼18.2%, which is higher than that of the corresponding non-sulfur-containing azaacene 10,17-bis((triisopropylsilyl)ethynyl)dipyrido[3,2-a:2′,3′-c]quinoxalino[2,3-i]phenazine (PYPH)-based PSCs (up to 9.5%) or PCBM-based PSCs (up to 17.0%). This superior performance is attributed to the stronger interaction between TDTP and the perovskite surface than that between PYPH and the perovskite surface, which is supported by theoretical calculations. Our results show that easily-accessible simple n-type sulfur-containing small molecules are promising ETL candidates to further propel inverted PSCs to practical applications.
Co-reporter:Debajit Sarma, Saiful M. Islam, K. S. Subrahmanyam and Mercouri G. Kanatzidis
Journal of Materials Chemistry A 2016 - vol. 4(Issue 42) pp:NaN16605-16605
Publication Date(Web):2016/09/16
DOI:10.1039/C6TA06404C
Heavy metal ions (Cd2+, Hg2+, As3+ and Pb2+) are an important contributor to the contamination of groundwater and other water bodies in and around industrial areas. Herein, we demonstrate the rapid and efficient capacity of a layered metal sulfide material, K2xSn4−xS8−x (x = 0.65–1, KTS-3) for heavy metal ion removal from water. The effect of concentration, pH, kinetics, and competitive ions such as Na+/Ca2+ on the heavy metal ion removal capacity of KTS-3 was systematically investigated. X-ray photoelectron spectroscopy (XPS), elemental analyses, and powder X-ray diffraction studies revealed that the heavy metal ion-exchange of KTS-3 is complete (quantitative replacement of all potassium ions) and topotactic. The heavy metal ion-exchange by using KTS-3 follows the Langmuir–Freundlich model with high exchange capacities, qm 205(17) mg g−1 for Cd2+, 372(21) mg g−1 for Hg2+ and 391(89) mg g−1 for Pb2+. KTS-3 retains excellent heavy metal ion-exchange capacity even in very high concentration (1 M) of competing ions (Na+/Ca2+) and also over a broad pH range (2–12). KTS-3 also exhibits very good ion-exchange capacity for precious Ag+ and toxic As3+ ions. The kinetics of heavy metal ion adsorption by KTS-3 are rapid (absorbs all ions within a few minutes). These properties and the environmentally friendly character of KTS-3 make it a promising candidate for sequestration of heavy metal ions from water.
Co-reporter:Manolis J. Manos and Mercouri G. Kanatzidis
Chemical Science (2010-Present) 2016 - vol. 7(Issue 8) pp:NaN4824-4824
Publication Date(Web):2016/04/26
DOI:10.1039/C6SC01039C
Metal sulfide ion-exchangers (MSIEs) represent a new addition to the field of ion exchange materials. This is a growing class of materials that display exceptional selectivity and rapid sorption kinetics for soft or relatively soft metal ions as a result of their soft basic frameworks. Without requiring functionalization, they outperform the most efficient sulfur-functionalized materials. This is the first review focusing on this class of materials; it covers the most important MSIEs, focusing on their synthesis, structural features and ion-exchange chemistry. Furthermore, recent developments in the engineered and composite forms of MSIEs are described. Future research opportunities are also discussed in the hope of inspiring additional scientists to engage in this new area of research on sulfidic ion-exchange materials.
Co-reporter:Manolis J. Manos, Joon I. Jang, John B. Ketterson and Mercouri G. Kanatzidis
Chemical Communications 2008(Issue 8) pp:NaN974-974
Publication Date(Web):2007/12/18
DOI:10.1039/B712732D
[Zn(H2O)4][Zn2Sn3Se9(MeNH2)] has an open polar framework based on supertetrahedral clusters with a unique double connectivity mode and exhibits a strong second harmonic generation response, excellent acid stability and proton exchange capacity.
Co-reporter:In Chung, Joon I. Jang, Matthew A. Gave, David P. Weliky and Mercouri G. Kanatzidis
Chemical Communications 2007(Issue 47) pp:NaN5000-5000
Publication Date(Web):2007/11/12
DOI:10.1039/B714301J
The caesium salts of the novel molecular anions [P5Se12]5− and [P6Se12]4− are phase change materials and exhibit near infrared, non-linear optical second harmonic generation; [P5Se12]5− is a coordination complex with an octahedral P3+ center chelated by two [P2Se6]4− ligands whereas [P6Se12]4− features a [P2]4+ dimer chelated by two [P2Se6]4− ligands.
Co-reporter:Debajit Sarma, Christos D. Malliakas, K. S. Subrahmanyam, Saiful M. Islam and Mercouri G. Kanatzidis
Chemical Science (2010-Present) 2016 - vol. 7(Issue 2) pp:NaN1132-1132
Publication Date(Web):2015/10/27
DOI:10.1039/C5SC03040D
The fission of uranium produces radionuclides, 137Cs and 90Sr, which are major constituents of spent nuclear fuel. The half-life of 137Cs and 90Sr is nearly 30 years and thus that makes them harmful to human life and the environment. The selective removal of these radionuclides in the presence of high salt concentrations from industrial nuclear waste is necessary for safe storage. Here we report the synthesis and crystal structure of K2xSn4−xS8−x (x = 0.65–1, KTS-3) a material which exhibits excellent Cs+, Sr2+ and UO22+ ion exchange properties in varying conditions. The compound adopts a layered structure which consists of exchangeable potassium ions sandwiched between infinite layers of octahedral and tetrahedral tin centers. K2xSn4−xS8−x (x = 0.65–1, KTS-3) crystallizes in the monoclinic space group P21/c with cell parameters a = 13.092(3) Å, b = 16.882(2) Å, c = 7.375(1) Å and β = 98.10(1)°. Refinement of the single crystal diffraction data revealed the presence of Sn vacancies in the tetrahedra that are long range ordered. The interlayer potassium ions of KTS-3 can be exchanged for Cs+, Sr2+ and UO22+. KTS-3 exhibits rapid and efficient ion exchange behavior in a broad pH range. The distribution coefficients (Kd) for KTS-3 are high for Cs+ (5.5 × 104), Sr2+ (3.9 × 105) and UO22+ (2.7 × 104) at neutral pH (7.4, 6.9, 5.7 ppm Cs+, Sr2+ and UO22+, respectively; V/m ∼ 1000 mL g−1). KTS-3 exhibits impressive Cs+, Sr2+ and UO22+ ion exchange properties in high salt concentration and over a broad pH range, which coupled with the low cost, environmentally friendly nature and facile synthesis underscores its potential in treating nuclear waste.
Co-reporter:Shulan Ma, Qingmei Chen, Hao Li, Pengli Wang, Saiful M. Islam, Qingyang Gu, Xiaojing Yang and Mercouri G. Kanatzidis
Journal of Materials Chemistry A 2014 - vol. 2(Issue 26) pp:NaN10289-10289
Publication Date(Web):2014/04/15
DOI:10.1039/C4TA01203H
Polysulfide [Sx]2− (x = 2, 4) species were intercalated into magnesium–aluminium layered double hydroxide (MgAl–LDH) by a [Sx]2−/NO3− anion-exchange reaction. The resulting Sx–LDH materials exhibit excellent affinity and selectivity for heavy metal ions such as Cu2+, Ag+ and Hg2+. For the highly toxic Hg2+, the distribution coefficient Kd values can reach ∼107 mL g−1. The Sx–LDH materials rapidly reduce the concentrations of Hg2+ and Ag+ ions in testing solutions from ppm levels to trace levels of ≤1 ppb. A larger series of metal ions were investigated and the selectivity order of Ni2+, Co2+ ≪ Zn2+, Pb2+ < Cd2+ < Cu2+, Ag+, Hg2+ was observed. The Sx–LDH materials show higher selectivity for Cu2+/Zn2 compared to Co2+/Ni2+, providing good separation for these transition metal ions. After ion capture, the LDH hybrid materials retained the original hexagonal prismatic shape and showed good stability under acidic conditions (pH ∼ 3). The adsorption process of the metals occurs via M–S bonding. The enhanced environmental stability of the [Sx]2− groups provided by the LDH protective space, the confinement effect offered by the LDH layers, along with the easy accessibility of polysulfide ions to metal ions enable high capture ability and excellent selectivity. The Sx–LDH materials are thus promising as superior sorbents for the decontamination of polluted water.
Co-reporter:Qing Tan, Li-Dong Zhao, Jing-Feng Li, Chao-Feng Wu, Tian-Ran Wei, Zhi-Bo Xing and Mercouri G. Kanatzidis
Journal of Materials Chemistry A 2014 - vol. 2(Issue 41) pp:NaN17306-17306
Publication Date(Web):2014/09/08
DOI:10.1039/C4TA04462B
The thermoelectric properties of Ag-doped SnS samples synthesized by mechanical alloying followed by spark plasma sintering were studied. We report that SnS possesses a high Seebeck coefficient of >+400 μV K−1 and Ag doping increases the carrier concentration by more than four orders of magnitude giving significantly improving electrical conductivity. The thermal conductivity falls below 0.5 W m−1 K−1 at 873 K and leads to a high ZT of 0.6. The data indicate that earth-abundant and environmentally friendly SnS is a promising candidate for thermoelectric applications despite its relatively wide bandgap of 1.2 eV.
Co-reporter:Michihiro Ohta, Duck Young Chung, Masaru Kunii and Mercouri G. Kanatzidis
Journal of Materials Chemistry A 2014 - vol. 2(Issue 47) pp:NaN20058-20058
Publication Date(Web):2014/10/03
DOI:10.1039/C4TA05135A
The thermoelectric properties of Pb5Bi6Se14, a member of the cannizzarite homologous series; Pb3Bi2S6, a member of the lillianite homologous series; and PbBi2S4, a member of the galenobismuthite homologous series were investigated over the temperature range of 300 K to 723 K. The samples were synthesized by a solid state reaction of the binary precursors PbQ and Bi2Q3 (Q = S and Se) in evacuated and sealed quartz tubes, followed by pulsed electric current sintering. The crystal structure of Pb5Bi6Se14 consists of alternating two-dimensional infinite layers of PbSe and Bi2Se3. In the Pb5Bi6Se14 sintered compacts, the ab-plane was preferentially oriented perpendicular to the pressing direction, resulting in highly anisotropic electrical and thermal transport properties. The crystal structure of Pb3Bi2S6 is formed by stacking NaCl-type (Pb/Bi)S layers with a mirror as twinning operation, while that of PbBi2S4 consists of the NaCl-type and Bi2S3-type strips (broken layers) of finite widths. The crystal grains of Pb3Bi2S6 and PbBi2S4 were grown randomly, leading to nearly isotropic electrical and thermal transport properties in the sintered compacts. For all the samples, an n-type degenerate semiconductor-like behavior was found, providing a notable thermoelectric power factor of ∼3.0 μW K−2 cm−1 at 705 K for Pb5Bi6Se14, ∼2.4 μW K−2 cm−1 at 715 K for Pb3Bi2S6, and ∼2.6 μW K−2 cm−1 at 515 K for PbBi2S4 in a direction perpendicular to the pressing direction. Moreover, these materials exhibited effective phonon scattering, presumably at the interfaces between the layers, leading to extremely low lattice thermal conductivity in the range of 0.29 W K−1 m−1 to 0.80 W K−1 m−1 over the temperature range of 300 K to 723 K. The highest ZT of ∼0.46 at 705 K was observed in Pb5Bi6Se14 for the ab-plane direction.
Co-reporter:Gangjian Tan, Fengyuan Shi, Hui Sun, Li-Dong Zhao, Ctirad Uher, Vinayak P. Dravid and Mercouri G. Kanatzidis
Journal of Materials Chemistry A 2014 - vol. 2(Issue 48) pp:NaN20854-20854
Publication Date(Web):2014/11/10
DOI:10.1039/C4TA05530F
SnTe is an intriguing alternative to its sister compound PbTe in thermoelectric energy conversion because of their electronic and structural similarity; however, it is challenging to optimize its thermoelectric performance to the level of PbTe because of the difficulties in decreasing its intrinsically large hole population and high thermal conductivity arising from the tin vacancies. We demonstrate here that by alloying some AgBiTe2 in SnTe, thus forming AgSnxBiTex+2 compositions the hole concentration can be duly decreased because of the high efficiency of Bi as an electron donor. The lattice thermal conductivity is also decreased due to the strong scattering of phonons (by point defect scattering as well as Ag-rich nanostructures) to achieve a value of ∼0.7 W m−1 K−1 at ∼750 K. As a result, a high thermoelectric figure ZT of merit of ∼1.1 at 775 K is achieved by chemical composition optimization (×∼15), making lead free SnTe–AgBiTe2 a promising thermoelectric material.
Co-reporter:Alexandros P. Katsoulidis, Scott M. Dyar, Raanan Carmieli, Christos D. Malliakas, Michael R. Wasielewski and Mercouri G. Kanatzidis
Journal of Materials Chemistry A 2013 - vol. 1(Issue 35) pp:NaN10473-10473
Publication Date(Web):2013/07/01
DOI:10.1039/C3TA11934C
A new family of paramagnetic microporous polymeric organic frameworks (POFs) has been developed through the co-polymerization of terephthalaldehyde and pyrrole, indole, and carbazole, respectively. These POFs are functionalized with stable unpaired electrons and electron paramagnetic resonance spectroscopy and pulsed ENDOR spectroscopy confirms their existence. The free radicals are produced in the early steps of polymerization and are responsible for their optical properties and the chemical adsorption properties of the POFs. The optical band gap of these materials ranges from 0.8 to 1.6 eV. The new POFs have spherical morphology and exhibit surface areas up to 777 m2 g−1 (Pyr-POF-1). Furthermore, Pyr-POF-1 displays the uptake of CO2 14% wt and C2H6 9% wt at 273 K/1 bar and H2 1.2% wt at 77 K/1 bar. The pyrrole based material (Pyr-POF-2) shows high capacity for CO2, 10% wt, under ambient conditions (298 K/1 bar) and the isosteric heat of CO2 adsorption of ∼34 kJ mol−1. The preparation of this new POF family is based on a very simple synthetic pathway and highlights the significance of terephthalaldehyde as a precursor for the synthesis of low cost functional porous polymers.
Co-reporter:Santanu Bag, Indika U. Arachchige and Mercouri G. Kanatzidis
Journal of Materials Chemistry A 2008 - vol. 18(Issue 31) pp:NaN3632-3632
Publication Date(Web):2008/06/17
DOI:10.1039/B804011G
Metal-oxide and carbon gels and aerogels have been known for a long time. These aerogels have always been of strong interest because of their intriguing properties and potential diverse technological impact. Thanks to new sol–gel chemistry, chalcogenide nanoparticle and cluster-based aerogels (chalcogels) are the latest aerogels to come to the field and are now gaining notoriety because of properties not available in conventional aerogels. In this article, we highlight the recent synthetic advances in chalcogenide aerogels and their emerging unique properties and discuss some potential applications.
Zincate(1-), [4-[2-[15-[bis(4-hexylphenyl)amino]-10,20-bis[2,6-bis(octyloxy)phenyl]-21H,23H-porphin-5-yl-κN21,κN22,κN23,κN24]ethynyl]benzoato(3-)]-,
Benzene, 1,1',1'',1'''-methanetetrayltetrakis[4-azido-
Antimony lead silver telluride
MIL-53(Al)
Benzene, 1,1',1'',1'''-methanetetrayltetrakis[4-ethynyl-