Formamide, N,N-dimethyl-

Collect

BASIC PARAMETERS Find an error

CAS: 68-12-2
MF: C3H7NO
MW: 73.09378
Synonyms: Formamide, N,N-dimethyl-

TOPICS

REPORT BY

Yang Liu

Institute of Chemistry, Chinese Academy of Sciences
follow

Zhenzhong Yang

Institute of Chemistry, Chinese Academy of Sciences
follow

Ke Zhang

Institute of Chemistry, Chinese Academy of Sciences
follow

Jian Xu

Institute of Chemistry, Chinese Academy of Sciences
follow

Yong Huang

Institute of Chemistry, Chinese Academy of Sciences
follow

Daoben Zhu

Institute of Chemistry, Chinese Academy of Sciences
follow

Lei Jiang

Institute of Chemistry, Chinese Academy of Sciences
follow

Yongfang Li

Institute of Chemistry, Chinese Academy of Sciences
follow
Co-reporter: Wenli Tang, Dazhen Huang, Chang He, Yuanping Yi, Jing Zhang, Chongan Di, Zhanjun Zhang, Yongfang Li
pp: 1155-1165
Publication Date(Web):June 2014
DOI: 10.1016/j.orgel.2014.03.005
•Two A-π-D-π-A type indacenodithiophene-based small molecules have been designed and synthesized.•The indacenodithiophene-based small molecules exhibit good performance of OFETs and OPVs simultaneously.•Side chain positions of the π-bridges in the molecules influence the performance of the OFETs and OPVs.•The power conversion efficiency of the OSCs based on the molecules as donor reached ca. 3%.Solution-processed indacenodithiophene (IDT)-based small molecules with 1,3-indanedione (ID) as terminal acceptor units and 3,3′-hexyl-terthiophene (IDT-3Th-ID(I)) or 4,4′-hexyl-terthiophene (IDT-3Th-ID(II)) as π-bridges, have been designed and synthesized for the application in organic field-effect transistors (OFETs) and organic solar cells (OSCs). These molecules exhibited excellent solubility in common organic solvents, good film-forming ability, reasonable thermal stability, and low HOMO energy levels. For the OFETs devices, high hole motilities of 0.52 cm2 V−1 s−1 for IDT-3Th-ID(I) and 0.61 cm2 V−1 s−1 for IDT-3Th-ID(II) were achieved, with corresponding high ION/IOFF of ca. 107 and ∼109 respectively. The OSCs based on IDT-3Th-ID(I)/PC70BM (2:1, w/w) and IDT-3Th-ID(II)/PC70BM (2:1, w/w) without using any treatment of solvent additive or thermal annealing, showed power conversion efficiencies (PCEs) of 3.07% for IDT-3Th-ID(I) and 2.83% for IDT-3Th-ID(II), under the illumination of AM 1.5G, 100 mW/cm2. The results demonstrate that the small molecules constructed with the highly π-conjugated IDT as donor unit, 3Th as π-bridges and ID as acceptor units, could be promising organic semiconductors for high-performance OFETs and OSCs applications.Graphical abstractImage for unlabelled figure

Shu Wang

Institute of Chemistry, Chinese Academy of Sciences
follow

WenPing Hu

Institute of Chemistry, Chinese Academy of Sciences
follow