A novel transparent electrode composed of alginate/silver nanowire (AgNW) with high conductivity and low roughness is fabricated via a solution process at room temperature. The sol–gel transition of the alginate triggered by CaCl2 solution bonds the AgNWs to the substrate tightly. Meanwhile, Cl– in the solution can renovate the cracks on the AgNW surfaces created during the mechanical pressing, resulting in a great increase of the electrical conductivity. The alginate/AgNW composite film can reach a sheet resistance of 2.3 Ω/sq with a transmittance of 83% at 550 nm. The conductivity of the composite film remains stable after bending and tape tests, demonstrating excellent flexibility and great adhesion of AgNWs to the substrate. Moreover, the composite film shows better stability to resist longtime storage than conventional annealed-AgNW film. The organic light emitting diode using such alginate/AgNW composite film as anode presents current densities and luminances comparable to those of indium tin oxide (ITO) anode, and higher efficiencies are obtained due to the better charge balance.Keywords: alginate; mechanical pressing; OLED; renovate; silver nanowire;

•Super hydrophobic deep blue OLED fluorescence materials is a new concept.•Introduced super hydrophobic groups achieved better moisture resistant properties ,and deeper blue simultaneously.•Astonishing performance is envisioned by molecular design based on theoretical calculations and the single crystal X-Ray.•The CIE value for new materials are exactly match with the High-Definition Television requirements for deep blue emission.Fluorescent deep-blue emitters consisting of arylamine chrysene have attracted immense commercial interest in organic light-emitting devices (OLEDs). Herein, we endeavor to design emitters with super hydrophobic groups, namely trifluoromethoxy (OCF3) or trifluoromethylsufanyl (SCF3) substituted on 6,12-diarylamine chrysene. Surprisingly, the new materials show highly efficient and substantial blue shift in fluorescence spectra with more pure color quality, higher thermostability and better moisture resistant properties. Astonishing electroluminescence performance is envisioned by promoting the molecular design based on experience and theoretical calculations along with the single crystal X-Ray analysis. The CIE coordinate values for 6, 12-diamine-N,N,N′,N′-tetra(p-trifluoromethoxyphenyl)chrysene (DATPC-OCF3) and 6,12-diamine-N,N,N′,N′-tetra(p-trifluoromethylsulfanylphenyl)chrysene (DATPC-SCF3) are (0.14, 0.09) and (0.15, 0.06), respectively, which exactly match with the National Television System Committee (NTSC) and High-Definition Television requirements for unprecedented deep-blue emission.Download high-res image (208KB)Download full-size image

•A low roughness transparent AgNW electrode is fabricated without high temperature.•The PVA/AgNW flexible transparent film shows good adhesion and stability.•The AgNWs enhance the out-coupling efficiency in an OLED by scattering.•Flexible OLED with PVA/AgNW film as anode presents a high current efficiency.Highly smooth, conductive, and uniform flexible transparent composite film is produced by embedding silver nanowires (AgNWs) into polymer without high-temperature annealing. The insert of poly (vinyl alcohol) (PVA) layer enhances the hydrophilicity of the substrate surface and avoids the agglomeration of AgNWs. The thick junctions between nanowires are welded to the same height as a single wire by mechanical pressing, resulting in a great increase of the electrical conductivity and low surface roughness. The sheet resistance of the PVA/AgNW composite film reaches 3 Ω/sq with a transmittance of 83%, and does not show obvious change after tape test and substrate bending, suggesting good adhesion of AgNWs to the substrate and excellent flexibility. The composite film possesses better stability of resisting the chemical corrosion than conventional annealed-AgNW film. The scattering of AgNWs can break the waveguide mode and the total internal reflection, which consequently enhances the out-coupling efficiency in an organic light emitting diode (OLED). Flexible OLED employing the PVA/AgNW composite film as anode on polyethylene naphthalate (PEN) substrate presents a current efficiency improvement of 27% compared to controlled ITO-anode device with same structure, demonstrating its exciting prospect for applications in flexible optoelectronics.Download high-res image (243KB)Download full-size image

High performance quantum dot light-emitting diodes (QD-LEDs) have been realized by doping quantum dots into a polymer matrix as an emitting layer (EML). Efficient energy transfer from the matrix to QDs occurs, resulting in high efficiency QD emission. The issue of hole injection from the hole transport layer to the QD layer, which occurs in normal QD-LEDs due to the ultra-low highest occupied molecular orbital (HOMO) level of QDs, can be neglected. By introducing an additional hole blocking layer with a suitable lowest unoccupied molecular orbital (LUMO) level and electron mobility between the doped QD EML and electron transporting layer (ETL), the emission from the ETL can be eliminated, and an external quantum efficiency (EQE) of 4.7% has been obtained.

A series of novel angular BN-heteroacenes were successfully synthesized. Associated with the intrinsic syn-structures, they exhibit unique molecular alignments in a solid state and promising electronic properties, and are thus suitable as efficient nondoped emitters for the fabrication of blue organic light-emitting diodes with improved performance.

•The non-doped EML is economical and promising for OLEDs due to easy fabrication and low reagent consumption process.•We report a novel wide color-range tunable and low efficiency roll-off fluorescent OLED using two undoped ultrathin EML.•The CT-OLEDs are tunable from cold white to warm white with CCT 6932 K and 3072 K, respectively.We demonstrated a novel wide color-range tunable, highly efficient and low efficiency roll-off fluorescent organic light-emitting diode (OLED) using two undoped ultrathin emitters having complementary colors and an interlayer between them. The OLED can be tuned to emit sky blue (0.22, 0.30), cold white (0.29, 0.33), warm white (0.43, 0.42) and yellow (0.40, 0.45) according to the Commission Internationale de L’Eclairage (CIE) 1931 (x, y) chromaticity diagram. The device fabrication was simplified by eliminating doping process in the emission layers. The influence of interlayer thickness on luminous efficiency, efficiency roll-off and color tuning mechanism is thoroughly studied. The recombination zone is greatly broadened in the optimized device, which contributes to stable energy transfer to both emitters and suppressed concentration quenching. With a threshold voltage of 2.82 V, the color tunable organic light emitting diode (CT-OLED) shows a maximum luminance of 39,810 cd/m2, a peak external quantum efficiency (EQE) 6% and the efficiency roll-off as low as 11.1% at the luminance from 500 cd/m2 to 5000 cd/m2. This structure of CT-OLED has great advantages of easy fabrication and low reagent consumption. The fabricated CT-OLEDs are tunable from cold white (0.30, 0.36) to warm white (0.43, 0.42) with correlated color temperature (CCT) 6932 K and 3072 K, respectively, demonstrating that our proposed approach helps to meet the need for lighting with various CCTs.

•Two hole-transporting small molecules form the mixed host.•The solution processed device has comparable current efficiency to evaporated one.•Mixed host device exhibits both high efficiency and reduced driving voltage.•Mixed host structure can tune charge carrier balance and recombination zone.We have demonstrated highly efficient and reduced efficiency roll-off solution processed green phosphorescent organic light emitting diodes (OLEDs) utilizing two hole-transporting small molecular materials of 1,3-bis(carbazol-9-yl)benzene (mCP) and 4,4′,4″-tris(N-carbazolyl)-triphenylamine (TCTA) as a mixed host. Compared with the corresponding two single host devices, the mixed host one shows a superior overall performance. A low driving voltage of 5.5 V at 1000 cd/m2 with a current efficiency of 39.5 cd/A is achieved in the mCP:TCTA (3:1) mixed host device. Even at the luminance of 10000 cd/m2, the efficiency still reaches 28.6 cd/A. The enhanced charge carrier balance and broadened exciton recombination zone due to the mixed host contribute to the improvement of efficiency and efficiency roll-off.

A highly efficient and stable electron injection layer (EIL) for inverted organic light-emitting diodes (OLEDs) is developed. A 1 nm-thick Al is deposited between indium tin oxide cathode and commonly used Cs2CO3 EIL, which can significantly improve the stability. The Al may react with evaporated Cs2CO3 and form a much stabler Al–O–Cs complex, avoiding Cs oxidization by air according to X-ray photoemission spectroscopy measurement. When the Al is evaporated after Cs2CO3 layer, although such a Al–O–Cs complex also forms, the inferior electron injection at Al/4,7-diphenyl-1,10-phenanthroline interface leads to a joule heat-induced resistance that adversely affects the air stability of the device. It is expected that the developed Al/Cs2CO3 EIL promotes high efficiency and stable active-matrix OLEDs based on n-type thin film transistor.Keywords: air stability; electron injection layer; high efficiency; inverted OLED

In this paper, chalcopyrite CuFeS2 with sheet-like or rod-like morphology has been synthesized by solvothermal reaction route in the presence of poly(vinylpyrrolidone) (PVP). The concentration of PVP has significant influences on the morphology of CuFeS2 nanocrystals. With the increasing concentrations of PVP, the sheet morphology of CuFeS2 becomes more uniform. Meanwhile, the average dimensions of CuFeS2 sheets are reduced and small CuFeS2 nanoparticles are clearly decreased. When the molar ratio of CuFeS2 to PVP is 1:2, the shape of CuFeS2 changes to rod-like, which is composed of CuFeS2 sheets. Considering the influence of uniformity and shape of CuFeS2 nanocrystals, the CuFeS2 nanocrystals with different molar ratios of PVP have been used as active component to prepare anode for Li-ion batteries. The Li-ion battery using CuFeS2 nanocrystals with the molar ratio of 1:2 to PVP shows the highest reversible specific capacity of ~519 mAh/g after 50 cycles at a current density of 100 mA/g and maintains a specific capacity of ~400 mAh/g at a density of 1000 mA/g. The results demonstrate that the PVP-assisted CuFeS2 electrodes are promising candidates for use as Li-ion batteries.

We have successfully obtained a highly transparent and conductive film by doping poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) with graphene oxide (GO) and sodium dodecyl benzene sulfonate (SDBS). The PEDOT:PSS hybrid film mixed with 0.02% GO:SDBS by weight exhibits a sheet resistance of 85 ohm per square and a transmittance of 87% at 550 nm. The improvement of conductivity is mainly attributed to the weakening of coulombic attraction between PEDOT and PSS by the functional groups on GO nanosheets, and forming an extended conductive network by connecting PEDOT chains with GO nanosheets. Using the optimized PEDOT:PSS hybrid film as an anode, indium tin oxide (ITO)-free organic light emitting diodes (OLEDs) have been demonstrated on glass and polyethylene naphthalate (PEN) substrates, showing better performance than that with ITO as the anode. This proves that such PEDOT:PSS and GO:SDBS hybrid films are promising alternatives to ITO for low cost flexible OLEDs.

A low temperature solution-processed MoO3 (sMoO3) thin film with a facile method for organic optoelectronic devices is developed. The film is extremely smooth with a root mean square (RMS) roughness of 0.318 nm, which is a significant advance for fabricating devices. An X-ray photoelectron spectroscopy (XPS) measurement shows that the sMoO3 possesses few Mo5+ states with a Mo:O stoichiometry of 2.99, demonstrating a nearly ideal MoO3 stoichiometry at a low annealing temperature. The sMoO3 film exhibits a superior hole injection ability in both an organic light-emitting diode (OLED) and organic photovoltaic cell (OPV), compared to conventional hole injection material poly (3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). It is proved that the sMoO3 fabricated by the simple and low-cost method is an excellent alternative to a PEDOT:PSS anode buffer layer for solution-processed organic optoelectronic devices.

Highly conductive, uniform, and transparent nitrogen-doped graphene multilayer films were produced by a layer-by-layer (LbL) assembly method. Such a technique was realized by alternate deposition of graphene oxide modified with the cationic surfactant N,N,N-trimethyl-1-dodecanaminium bromide (CTAB) and the anionic surfactant sodium dodecylbenzenesulfonate. In this way, we can achieve a highly conductive (900 S/cm), uniform, and controllable graphene film in terms of thickness, transmittance, and sheet resistance after high-temperature reduction. The improved conductivity is attributed to better graphitization and nitrogen-doping introduced by CTAB. The organic light-emitting diode using such a multilayer graphene film fabricated by the LbL method as an anode obtains higher current density and luminance at low voltage compared to that with an indium–tin oxide (ITO) anode. Moreover, the current efficiency of graphene-based device is comparable to that of an ITO-based device. It is proved that such a nitrogen-doped multilayer graphene film developed by the LbL assembly technique is a promising candidate for a transparent electrode in organic electronics.Keywords: graphene; layer-by-layer; nitrogen-doping; OLED; surfactant

•The TOLED based on single ultrathin non-doped EML takes full advantages of the cavity standing wave condition.•Higher out-coupling efficiency with ultrathin EML compared to conventional doped EML with relatively wide emission zone.•Dual ultrathin non-doped EMLs separated by a special bi-layer structure further improves efficiencies.•High efficiencies of 125 cd/A at 1000 cd/m2 and 111 cd/A at 10,000 cd/m2 with optimized dual ultrathin EML.Ultrathin non-doped emissive layer (EML) has been employed in green phosphorescent top-emitting organic light-emitting diodes (TOLEDs) to take full advantages of the cavity standing wave condition in a microcavity structure. Much higher out-coupling efficiency has been observed compared to conventional doped EML with relatively wide emission zone. A further investigation on dual ultrathin non-doped EMLs separated by a special bi-layer structure demonstrates better charge carrier balance and improved efficiency. The resulting device exhibits a high efficiency of 125.0 cd/A at a luminance of 1000 cd/m2 and maintains to 110.9 cd/A at 10,000 cd/m2.

•High efficiency inverted phosphorescence OLED based on ultrathin emitting layer.•The inverted PhOLED has higher efficiency than conventional PhOLED.•Above 30% EQE for inverted PhOLED with ultrathin doped EML.•Nearly 20% EQE at 10,000 cd/m2 for inverted PhOLED with broadened EML.High efficiency inverted phosphorescence organic light-emitting diodes (PhOLEDs) based on ultrathin undoped and doped emitting layer (EML) have been developed. Compared to conventional device, the inverted PhOLED with 0.5 nm undoped EML exhibits significantly larger external quantum efficiency (EQE), due to effective energy transfer from the excited host to the emitter. According to the atomic force microscopy image of EML, the 0.5 nm emitter sandwiched by two hosts can be considered as the emitter doped in two hosts. The inverted device with intentionally doped ultrathin EML (1.5 nm) exhibits the maximum EQE of 31.1%, which is attributed to optimized charge balance and preferred horizontal orientation of emitter. However, such inverted device has large efficiency roll-off at high brightness because of triplet–triplet annihilation process within the ultrathin EML. This can be improved by broadening the doped EML. The inverted device with 10.5 nm doped EML has about EQE of 20 % at 10,000 cd/m2. It is expected that our inverted PhOLED will promote development of high efficiency active-matrix organic light-emitting diodes based on the n-type Indium Gallium Zinc Oxide thin film transistor.Graphical abstract

•FDTD method is applied in TOLEDs for optical optimization, demonstrating good agreement with experimental data.•A mixed host with bipolar transport property is employed to avoid charge accumulation and broaden the recombination zone.•A current efficiency of 127.0 cd/A at 1000 cd/m2 is obtained, and maintains to 116.3 cd/A at 10,000 cd/m2.•The resulting TOLED exhibits a highly saturated color, as well as hardly detectable color shift with viewing angles.We have successfully applied finite-difference time-domain (FDTD) method in top-emitting organic light-emitting diodes (TOLEDs) for structure optimization, demonstrating good agreement with experimental data. A mixed host with both hole transport and electron transport materials is employed for the green phosphorescent emitter to avoid charge accumulation and broaden the recombination zone. The resulting TOLEDs exhibit ultra-high efficiencies, low current efficiency roll-off, and a highly saturated color, as well as hardly detectable spectrum shift with viewing angles. In particular, a current efficiency of 127.0 cd/A at a luminance of 1000 cd/m2 is obtained, and maintains to 116.3 cd/A at 10,000 cd/m2.Graphical abstract

Triphenylacrylonitrile and diarylamine based D–π–A luminogens exhibit typical AIE characteristics with high solid state efficiency up to unity and switchable mechanochromism with high contrast, which render them multifunctional materials for versatile applications in optical storage, volatile organic compound (VOC) detection, OLEDs, etc.

•More than twofold improvement in the current efficiency.•High optical transparency of over 90% in the main visible region.•Long-term stability with voltage almost unchanged during 100 h operation test.•A working mechanism has been proposed to explain how the CGU generates separates holes and electrons.We demonstrate a highly efficient, transparent and stable charge generation unit (CGU) combining a p-doped hole transporting layer (HTL) with an electron extraction layer (EEL). The CGU exhibits high optical transparency of over 90% and good stability with little voltage variation under stress. We propose a working mechanism of CGU based on an investigation of the CGU-only devices excluding the influences of emitters. Holes and electrons are generated in the p-doped layer, while the EEL facilitates electron injection into the adjacent electron transporting layer. It is expected that this CGU is a promising candidate for easy-fabrication, low-power-consumption and high-stability tandem white OLED for future display and lighting application.Graphical abstract

•Both light emitting hosts are used as transporting layers as well.•Crossfading-host leads to better performance than double-host and co-host.•The external quantum efficiency reaches 21% at 1000 cd/m2 and 19.3% at 10,000 cd/m2.•Similar exciton lifetime in gradient-host and co-host means no impact on roll-off.•Recombination zone is expanded with increasing current density in gradient-host.We report a high efficiency and low efficiency roll-off green phosphorescent organic light emitting diode using both hole- and electron-transporting host materials in a crossfading profile. To eliminate the energy barrier and reduce the charge carrier accumulation, the host materials are used as transporting layers as well, which also simplifies the device fabrication. It is found out that the recombination zone of gradient doping host sample is not only wider but also extended at high current density, which contributes to the suppressed efficiency roll-off at high luminance. An external quantum efficiency of 21.0% at 1000 cd/m2 is obtained, and maintains to 19.3% at 10,000 cd/m2.Graphical abstract

•High triplet energy and deep HOMO material is used as both light emitting host and hole transporting layer.•Carrier accumulation adjacent to light emitting zone is eliminated.•Co-host structure is utilized to obtain better charge carrier balance and broadened recombination zone.•High efficiency with low roll-off is achieved even at high brightness.Highly efficient green phosphorescent organic light-emitting diodes (PHOLEDs) with low efficiency roll-off at high brightness have been demonstrated with a novel iridium complex. The host material 1,3-bis(carbazol-9-yl)benzene (mCP) with high triplet energy is also used as the hole transporting layer to avoid carrier accumulation near the exciton formation interface and reduce exciton quenching. It provides a new approach for easily fabricating PHOLED with high triplet energy emitter. Moreover, the hole blocking layer is extended into the light emitting layer to form a co-host, realizing better control of the carrier balance and broader recombination zone. As a consequence, a maximum external quantum efficiency of 20.8% and current efficiency of 72.9 cd/A have been achieved, and maintain to 17.4% and 60.7 cd/A even at 10,000 cd/m2, respectively.

We have systematically investigated charge separation process in an ultrathin electron-injecting bilayer-assisted charge generation unit (CGU) consisting of n-type/p-type junction for tandem organic light-emitting diode (OLED). Charge generation occurs in the p-type side, which is formed by doping a strong electron acceptor in an electron-rich organic semiconductor (OSC). The n-type side is an ultrathin bilayer that acts as electron-injecting layer (EIL) for assisting electron separation from the p-type doped OSC. The energy barrier for electron tunneling is significantly reduced by means of increasing the evaporation rate of Al in the bilayer and acceptor concentration in OSC. Moreover, insertion of an interlayer with a deep-lying lowest unoccupied molecular orbital (LUMO) level between the n-type and p-type materials induces a tunneling path with low barrier, which is further proved by current density–voltage (J–V) and capacitance–voltage (C–V) characteristics of external carrier-excluding devices. Tandem OLED with CGU including the interlayer exhibits better performances such as lower driving voltage and higher power efficiency, demonstrating that the interlayer with deep-lying LUMO plays an important role in promotion of charge separation process.

•A simple hot-pressing method to modify transparent electrode is demonstrated.•The hot-pressed AgNW film presents comparable conductivity and transmittance to ITO.•The hot-pressed AgNW film shows smooth surface and good stability.•OLED with hot-pressed AgNW anode obtains a maximum current efficiency of 58.2 cd/A.A highly conductive, smooth and transparent electrode is developed by coating poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) over silver nanowires (AgNWs) followed by a hot-pressing method. The hot-pressed AgNW/PEDOT:PSS film shows a low sheet resistance of 12 Ω/square, a transmittance of 83% at 550 nm and a smooth surface. The improvement of the conductivity and smoothness are ascribed to the fusion of nanowires resulted from the mechanical hot-pressing. The AgNW/PEDOT:PSS film on polyethylene naphthalate (PEN) substrate exhibits higher conductive stability against the bending test than commonly used indium tin oxide (ITO). Using the hot-pressed AgNW/PEDOT:PSS film as the anode, we have fabricated ITO-free organic light emitting diode with a maximum current efficiency of 58.2 cd/A, which is higher than the device with ITO anode. This proves that such AgNW/PEDOT:PSS film treated by hot-pressing is a promising candidate for flexible optoelectronic devices.Download high-res image (293KB)Download full-size image

Using a simple and low temperature dipping treatment in hydriodic acid (HI) solution, we have fabricated a highly conductive and transparent poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and graphene oxide (GO) hybrid film. The HI treated PEDOT:PSS with 0.01 wt% GO hybrid film can obtain a highest conductivity of about 1290 S cm−1. The enhancement in the conductivity is mainly caused by the removal of the PSS chains of PEDOT:PSS and functional groups on the GO sheets from the hybrid film surface after the film undergoes dipping treatment in HI solution. The remaining PEDOT domains together with the reduced GO sheets can provide more conductive pathways for carriers and improve the conductivity of the film. After mixing with the reduced GO sheets, the air stability of the PEDOT:PSS hybrid film is also dramatically improved. Using the HI-treated PEDOT:PSS:GO hybrid film as an anode, we have successively fabricated organic light emitting diodes, which show higher current density and luminance values compared to those with indium tin oxide as an anode.

High performance quantum dot light-emitting diodes (QD-LEDs) have been realized by doping quantum dots into a polymer matrix as an emitting layer (EML). Efficient energy transfer from the matrix to QDs occurs, resulting in high efficiency QD emission. The issue of hole injection from the hole transport layer to the QD layer, which occurs in normal QD-LEDs due to the ultra-low highest occupied molecular orbital (HOMO) level of QDs, can be neglected. By introducing an additional hole blocking layer with a suitable lowest unoccupied molecular orbital (LUMO) level and electron mobility between the doped QD EML and electron transporting layer (ETL), the emission from the ETL can be eliminated, and an external quantum efficiency (EQE) of 4.7% has been obtained.

We have successfully obtained a highly transparent and conductive film by doping poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) with graphene oxide (GO) and sodium dodecyl benzene sulfonate (SDBS). The PEDOT:PSS hybrid film mixed with 0.02% GO:SDBS by weight exhibits a sheet resistance of 85 ohm per square and a transmittance of 87% at 550 nm. The improvement of conductivity is mainly attributed to the weakening of coulombic attraction between PEDOT and PSS by the functional groups on GO nanosheets, and forming an extended conductive network by connecting PEDOT chains with GO nanosheets. Using the optimized PEDOT:PSS hybrid film as an anode, indium tin oxide (ITO)-free organic light emitting diodes (OLEDs) have been demonstrated on glass and polyethylene naphthalate (PEN) substrates, showing better performance than that with ITO as the anode. This proves that such PEDOT:PSS and GO:SDBS hybrid films are promising alternatives to ITO for low cost flexible OLEDs.

A low temperature solution-processed MoO3 (sMoO3) thin film with a facile method for organic optoelectronic devices is developed. The film is extremely smooth with a root mean square (RMS) roughness of 0.318 nm, which is a significant advance for fabricating devices. An X-ray photoelectron spectroscopy (XPS) measurement shows that the sMoO3 possesses few Mo5+ states with a Mo:O stoichiometry of 2.99, demonstrating a nearly ideal MoO3 stoichiometry at a low annealing temperature. The sMoO3 film exhibits a superior hole injection ability in both an organic light-emitting diode (OLED) and organic photovoltaic cell (OPV), compared to conventional hole injection material poly (3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). It is proved that the sMoO3 fabricated by the simple and low-cost method is an excellent alternative to a PEDOT:PSS anode buffer layer for solution-processed organic optoelectronic devices.

Triphenylacrylonitrile and diarylamine based D–π–A luminogens exhibit typical AIE characteristics with high solid state efficiency up to unity and switchable mechanochromism with high contrast, which render them multifunctional materials for versatile applications in optical storage, volatile organic compound (VOC) detection, OLEDs, etc.

Blue light-emitting phosphorus and silicon-bridged stilbenes have been synthesized and characterized. The organic light-emitting diodes (OLEDs) fabricated with these compounds demonstrate that this new type of phospholes is a promising material for deep blue fluorescence emitters.