Sexiphenyl

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CAS: 4499-83-6
MF: C36H26
MW: 458.59164
Synonyms: Sexiphenyl

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Jidong Zhang

Chinese Academy of Science
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YanHou Geng

Changchun Institute of Applied Chemistry, Chinese Academy of Sciences
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Zhanchen Cui

Jilin University
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Co-reporter: Chunyu Zhang, Zhanchen Cui, He Wang, Donghang Yan, Yao Li, Zuosen Shi, Aihua Wu, Zhuo Zhao, Shengji Luan
pp: 2295-2301
Publication Date(Web):October 2014
DOI: 10.1016/j.orgel.2014.04.027
•Polyurethane containing terphenyl groups affording high-mobility organic thin-film transistor.•Polyurethane containing terphenyl groups can be easily fabricated by solution-processing and cured by UV.•Polyurethane containing terphenyl groups can induce crystallization of sexiphenyl.Novel polyurethane containing terphenyl groups were designed and synthesized as gate insulators to induce the crystallization of p-sexiphenyl(p-6P) for organic thin-film transistors (OTFTs). Different sizes and shapes of p-6P grains were measured by atomic force microscopy (AFM), and results showed that the large size of p-6P grain can improve the performance of OTFTs. About 900 nm thick films can be easily fabricated by spin-coating under ambient conditions, followed by curing at UV irradiation for 10 min. OTFTs with this film as gate insulator were found to have good processability, a high charge-carrier mobility of 1.1 cm2/V s, a threshold voltage of −25 V, and an on/off current ratio >105. The result indicated that this material is a promising candidate for the exploration of devices using OTFTs.Graphical abstractNovel polyurethane containing terphenyl groups were designed and synthesized as gate insulators to induce the crystallization of p-sexiphenyl(p-6P) for organic thin-film transistors (OTFTs). Different sizes and shapes of p-6P grains were measured by atomic force microscopy, and results showed that the large size of p-6P grain can improve the performance of OTFTs. About 900 nm thick films can be easily fabricated by spin-coating under ambient conditions, followed by curing at UV irradiation for 10 min. OTFTs with this film as gate insulator were found to have good processability, a high charge-carrier mobility of 1.1 cm2/V s, a threshold voltage of −25 V, and an on/off current ratio >105. The result indicated that this material is a promising candidate for the exploration of devices using OTFTs.Image for unlabelled figure

Eric Bittner

University of Houston
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Juergen Heinze

Freiburg Materials Research Center (FMF)
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Yanhou Geng

Changchun Institute of Applied Chemistry
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Lifeng Chi

Soochow University
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Xianggao Li

Tianjin University
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ShiRong Wang

Tianjin University
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Donghang Yan

Changchun Institute of Applied Chemistry
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